Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1860) Application : Audio and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions FM100(TO3PF)
Symbol Ratings Symbol Conditions Ratings
0.8±0.2
Unit Unit 15.6±0.2 5.5±0.2
µA
5.5
9.5±0.2
VCEO 150 V IEBO VEB=5V 100max
23.0±0.3
VEBO 5 V V(BR)CEO IC=25mA 150min V
ø3.3±0.2
IC 14 A hFE VCE=4V, IC=5A 50min∗ a
1.6
b
IB 3 A VCE(sat) IC=5A, IB=500mA 2.0max V
3.0
PC fT VCE=12V, IE=–2A 60typ MHz
3.3
80(Tc=25°C) W
1.75
Tj 150 °C COB VCB=10V, f=1MHz 200typ pF 0.8
16.2
2.15
Tstg –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) 1.05 +0.2
-0.1
60 0mA 400m
A
A
50 A
0m
300m
75
A
200m
10 A 10
150m
2
10 0m A
p)
p)
50m A 5
em
Tem
5
1
eT
se
as
(Ca
(C
I C =10A
5˚C
I B =20mA
˚C
˚C
12
–30
25
5A
0 0 0
0 1 2 3 4 0 0.2 0.4 0.6 0.8 1.0 0 1 2
Collector-Emitter Voltage V C E (V) Base Current I B (A) Base-Emittor Voltage V B E (V)
(V C E =4V) (V C E =4V)
200 200 3
125˚C
DC Cur rent Gain h FE
DC Curr ent Gain h F E
–30˚C
0.5
50 50
20 20 0.1
0.02 0.1 0.5 1 5 10 14 0.02 0.1 0.5 1 5 10 14 1 10 100 1000 2000
Collector Current I C (A) Collector Current I C (A) Time t(ms)
1m
10 s
M aximum Power Dissipa ti on P C (W)
10 m
Typ s
10 0m
Cut-o ff F requ ency f T (MH Z )
60 DC s 60
W
ith
Co lle ctor Cu rre nt I C (A)
5
In
fin
ite
he
40 40
at
si
1
nk
0.5
20 Without Heatsink 20
Natural Cooling
0.1
Without Heatsink
3.5
0 0.05 0
–0.02 –0.1 –1 –10 2 5 10 50 100 200 0 25 50 75 100 125 150
150
Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C)
120