5.5 ±0.2
9.3 ±0.3
±0.3
21.5
2.3 ±0.2
20 Min
2.1±0.3 1.6 ±0.3
+0.2
1.1 —0.1
3.5 ±0.2
5.45 ±0.2 5.45 ±0.2 0.6 +0.2
Features 1. Gate
2. Drain
Insulated package by fully molding 3. Source
JEDEC
Low VF EIAJ
Super high speed switching
High reliability by planer design Connection diagram
Applications
種07.
High speed power switching
機
定 h 20
3
守 廃
Conditions
bs o l ete ign.
d s
e200
Rating Unit
保 o
Repetitive peak reverse voltage V V
be new
RRM
d
le foTc=108°C
Average output current
3月 I O
u
Square wave,
h ed end
duty=1/2, r 20* A
Surge current
7年 I
i s s
FSM c
Sine wave
m m10ms 100 A
2 00 is p
r o
ct reco
Operating junction temperature du T
N o tj -40 to +150 °C
T
Storage temperatureh T stg -40 to +150 °C
100 10000
5000
50 3000
30
1000
500
300
10
IF IR
100
[A] 5 [µA] 50
3 30
10
1 5
3
0.5
0.3 1
0.5
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 100 200
VF [V] VR [V]
種07.
14
機
140
12
10 120
予 a rc 定 h 20
WF
8 Tc
[°C] 100
廃 l ete ign.
止 on m
[W] 6
4
守 obs des
o
保uled befor new
80
3 月sched mend
年
60
0
0 2
7 c 4 is com
00 odu t re
t 6 8 10 12 14 0 4 8 12 16 20
2 his pr Io [A]
No
Io [A]
T
Junction capacitance characteristics Surge capability
100
300
50
30
100
Cj
IFSM
[pF]
[A]
50
10
30
3
10
5 10 30 50 100 200 1 3 5 10 30
VR [V] [time] (at 50Hz)
(200V / 20A ) ESAD92M-02R (20A)
101
[°C/W]
100
10-1
10-3 10-2 10-1 100 101 102
t [sec.]
機 種07.
予 定 h 20
a rc
廃 止 on m
l ete ign.
守 obs des
o
保uled befor new
3 月sched mend
7年 is com
00 odu t re
2 his pr
c t
No
T