Date
Realized by:
JENHANI FARAH
ING 2
2018-2019
Objectives:
Tab 1: parameters
2- MODEL (mod1) :
2.1 Definitions:
Coordinate Systems
Coordinate system type Boundary system
Identify sys1
Tab 2: Boundary System 1
2.2 Geometry 1 :
In “geometry 1”, we have defined tow rectangles r1 of width equal to W_diode / 2 and of size
d_diode and r2 of width r2 equal to W_diode / 2+ d_p and of d_p. then we specified filet 1.
Fig1: Geometry 1
Length unit µm
Angular unit deg
Tab3: Units
2.3 Materials
Silicon
Fig2: Silicon
Tab4: Selection
Semiconductor (semi)
The upper part corresponds to the P type semiconductor and the lower part corresponds to the N type
semi conductor
Anode(P)
Cathode(N)
Fig 3: Semiconductor
In semiconductor physics, a P-N junction denotes a zone of the crystal where the doping varies
abruptly, from P-doping to N-doping. When the P-doped region is brought into contact with the n
region, the electrons and the holes diffuse spontaneously on either side of the junction, thus creating a
depletion zone where the concentration of free carriers is practically zero. While a doped
semiconductor is a good conductor, the junction hardly lets through the current. The length of the
depletion zone varies with the voltage applied on both sides of the junction. The shorter this area, the
lower the resistance of the junction. The characteristic I (V) of the junction is therefore strongly non-
linear: it is that of a diode.
The physics of P-N junctions has great practical utility in the creation of semiconductor devices. The
current rectifying diode as well as most other types of diodes thus contain a P-N junction. The
photovoltaic cells also consist of a large area p-n junction in which the electron-hole pairs created by
the light are separated by the electric field of the junction.
Finally, a type of transistor, the bipolar transistor, is realized by putting two junctions p-n in the
opposite direction - transistor PNP or NPN.
Ground Node 1
Voltage Source 1
External U Vs. I 1
Resistor 1
Ground Node 1
Voltage Source 1
Diode 1
Resistor 1
Tab 7: Features Fig 5 : circuit of a simple alternation rectification
Ground Node 1
Voltage Source 1
Diode 1
Diode 2
Diode 3
Diode 4
Resistor 1
Tab 8: Features Fig 6 : Full wave rectification circuit with a Graetz bridge
Electrical Circuit 4 (cir4)
Ground Node 1
Diode 1
Diode 2
Diode 3
Diode 4
Resistor 1
Capacitor 1
Voltage Source 1
Tab 9: Features Fig 7: alternation rectification circuit with filter
Mesh 1
Fig 8: Mesh 1
Study 1
Time Dependent
Property Value
Include geometric nonlinearity Off
Times: range(0,tmax/100,tmax)
Geometry Mesh
Geometry 1 (geom1) mesh1
Tab 11: Mesh selection
Physics Discretization
Semiconductor (semi) Physics
Electrical Circuit (cir) Physics
Property Value
Include geometric nonlinearity Off
Geometry Mesh
Geometry 1 (geom1) mesh1
Physics Discretization
Electrical Circuit 2 (cir2) Physics
Property Value
Include geometric nonlinearity Off
Times: range(0,tmax/100,tmax)
Geometry Mesh
Geometry 1 (geom1) mesh1
Physics Discretization
Electrical Circuit 3 (cir3) Physics
Property Value
Include geometric nonlinearity Off
Geometry Mesh
Geometry 1 (geom1) mesh1
Physics Discretization
Electrical Circuit 4 (cir4) Physics
Solution 1
Name Value
Solution Solver 1
Model Save Point Geometry 1
Name Value
Solution Solver 2
Model Save Point Geometry 1
Solution 3
Name Value
Solution Solver 3
Model Save Point Geometry 1
Tab 27: Solution 3
Solution 4
Name Value
Solution Solver 4
Model Save Point Geometry 1
Plot Groups
A PN junction consists of two respectively P and N doped zones. When the two regions are
assembled, the difference in concentration between the carriers of the P and N regions will
cause the circulation of a diffusion current tending to equalize the concentration. in carriers of
a region tothe other. The holes in region P will diffuse to region N leaving behind ionized
atoms, which constitute many fixed negative charges. It is the same for the electrons of the
region N which diffuse towards the region P leaving behind positive charges. It also appears
at the junction a zone containing positive and negative fixed charges. These charges create an
electric field E which opposes the diffusion of the carriers.
Hole Concentration (semi)
Voltage probes
In circuit 3 the use of a Graetz bridge gives a dual alternation rectification. During the positive
alternation, the diodes D1 and D2 are conductive and feed the load, diodes D3 and D4 are
blocked. During the negative alternation, the diodes D3 and D4 are conductive and feed the
load, the diodes D1 and D2 are blocked.
For low power devices, the simplest filtering is done using one or more capacitors placed
parallel to the output. The capacitor stores the energy when the current flows through the
diodes and then restores it. • For a given load, the more the capacity of the capacitor is higher,
the more the filtering is efficient. • For a given capacitor, the lower the current charge (R big),
the better the filtering is efficient • As a general rule, when the rectifier feed a resistive power,
the larger the product, the more efficient the filtering is. It can therefore be seen that the larger
the capacity of the capacitor, the more the undulations are limited.
Conclusion