ELEKTRONİĞE GİRİŞ ve ANALOG ELEKTRONİK

LABORATUVARLARI

DENEY RAPORU

Experiment 1
Deney Adı Extraction of DC Characteristics of BJT and MOSFET

Sadık İlik
Deneyi Yaptıran Ar. Gör.

Mehmet Yakuphan Bilgiç

Raporu Hazırlayan 150170703
(İsim / Numara / Bölüm) Computer Engineering

E28
Grup Numarası ve 07.12.2018
Deney Tarihi

Rapor Notu Teslim Edildiği Tarih Teslim Alındığı Tarih

07.12.2018

Elektronik ve Haberleşme Mühendisliği

I s t a n b u l T e k n i k U n i v e r s i t e s i
 ELEKTRONİĞE GİRİŞ ve ANALOG ELEKTRONİK
LABORATUVARLARI

1) Introduction
In this experiment we used BJT and MOSFET transistors. We were able to observe
and understand their characteristics. We experimented with BJT in their forward-active mode,
reverse-active mode and saturation mode.

2) Experiment

In first part we were asked to implement the circuit

VBE IC IB
given in the lab sheet and observer and wrote the different
0.623 0.571 4.013 values of VBE, IC and IB for different values of R. The
0.637 0.841 6.286 table we filled is given below.
We also draw the graph for these values in order to
0.647 1.298 9.249 visualize the changes.
0.655 1.776 12.258
0.667 2.911 19.123
0.672 3.742 24.026
0.681 6.048 37.27
0.689 8.822 52.601
0.69 12.045 70.348
0.695 16.339 93.292
0.697 23.52 129.413 $

Elektronik ve Haberleşme Mühendisliği

I s t a n b u l T e k n i k U n i v e r s i t e s i
 ELEKTRONİĞE GİRİŞ ve ANALOG ELEKTRONİK
LABORATUVARLARI

Question: β value changes a lot from forward to reverse mode, why?

When we move into reserve mode, np junction becomes pn junction. This means that
the previous value of B which was Ic / Ib now becomes Ib/Ic, which causes a drastic change
in the value.

In this part, we implemented following circuit and changed the value of R2 to observe
how Vgs and Id changes according to that.
VGS ID
9.28 18.24
8.92 17.15
8.5 16.03
7.94 14.24
7.02 11.54
6.33 9.49
4.06 3.8
4.07 3.74
3.462 2.47
2.865 1.296
2.152 0.67

For last part we implemented following circuit and changed the Vds voltage value
within 0-10 and measured the changes it caused in Id.

10
3) Conclusion
7,5
It was an interesting experiment overall. We
5 learned about transistors. We sometimes had hard
2,5
times building circuits but our assistant was really
helpful.
0
1 2 3 4 5 6 7 8 9 10 11

VDS ID

Elektronik ve Haberleşme Mühendisliği

I s t a n b u l T e k n i k U n i v e r s i t e s i