hard-switched converters has passed. At this point both MOSFETs are activated, free-wheeling the
inductor current away from the discrete diode and through the channels
W.M. Blewitt and D.I. Gurwicz of the devices.
100
95
90
85
80
75
70
65
Fig. 1 Existing method of blocking internal body diode
60 MOSFET only
improved switch
Method: Unlike IGBTs, a MOSFET channel can be used to pass current 55
in either direction [2], a technique that has been used in synchronous rec-
50
tifiers [3]. In a device with low channel resistance RDS(on) , losses are 0 10 20 30 40 50 60 70
minimal when compared to diode forward conduction. This property PWM frequency, kHz
can be utilised in a bridge circuit to shunt the inductor free-wheeling
current away from the body diode and through the channel, thus prevent- Fig. 4 Experimental results: switch efficiency against PWM frequency
ing activation of the diode. This reduces losses by two mechanisms: first,
by providing a low-loss path for the free-wheeling current to flow (the Owing to the clamping action of the external diode, the lower device
MOSFET channel), and, secondly, by eliminating additional switching need only be rated for low voltage and as such can be selected to have an
losses that would be inherent with body diode reverse recovery. extremely low RDS(on). The combination of devices shown in Fig. 2 is
Owing to the finite switching time of the MOSFETs, dead-time is used to replace a single switch in a bridge circuit. As the MOSFETs
required in a bridge circuit to prevent short circuiting of the DC bus are connected with common sources, they can be gated from the same
and causing shoot through. Using the MOSFET channel for current gate drive circuit, requiring no additional complexity of the controller.
free-wheeling without dead-time can result in large current spikes
through two series connected devices in the active state [4]. Experimental results and conclusions: This technique is experimentally
Implementing the necessary dead-time will thus normally cause the acti- verified using a single phase H-bridge (Fig. 3) configuration modulating
vation of the body diode to shunt the free-wheeling current and switch- a 50 Hz sinusoidal output current. With VDC ¼ 200 V running at
ing losses are subject to the undesirable effects of its reverse recovery. 0.5 kW with an RL load and a varied PWM carrier from 5 to 70 kHz
To allow dead-time and still prevent activation of the body diode, the and 1 ms dead-time. Upper device blocking voltage VBR ¼ 600 V
use of an additional series MOSFET connected with common sources with RDS(on) ¼ 35 mV (APT77N60JC3), lower device VBR ¼ 20 V
(Fig. 2) will block the free-wheeling current and shunt it through a with RDS(on) ¼ 1 mV (IRF1324S-7PPbF) and a fast external diode