Basic Electronics

Learning Objectives
• At the end of this lecture presentation, the students
should be able to:
1. explain biasing of diode
2. discuss the three biasing conditions of diode
3. explain the characteristic curve of a diode
4. discuss the Zener region of diode
Biasing
• The application of a DC voltage or current to the
semiconductor device

• Biasing Conditions of a Diode

 No Bias
 Forward Bias
 Reverse Bias
Biasing Condition: No Bias
• VD= 0V
• In the absence of an applied bias voltage, the net
flow of charge in any one direction for a
semiconductor diode is zero
• DEPLETION REGION
• The region of uncovered positive and negative
ions due to the depletion of carriers on this region
Biasing Condition: Forward Bias
• the anode is made more positive with respect to the
cathode
• VD > 0V
• forward bias potential will pressure electrons and holes
to recombine and reduce the width of the depletion
region that results in a heavy flow of current across the
junction
• as applied bias increases, depletion width continue to
decrease, until flood of electrons can pass through the
junction
Diode Characteristic Curve (Current vs. Voltage)
ID(mA) Ge Si
Forward – Biased
Region

VBR VBR VD(V)

VTH0.7V
VTH0.3V

Reversed – Bias
Region

Si Ge
Diode Forward Current (ID) Equation
𝑘𝑉𝐷
where: 1
𝐼𝐷 = 𝐼𝑆 𝑒 𝑇𝐾 −1
• ID = diode current
• IS = reverse saturation current or leakage current
• VD = forward voltage across the diode
• TK = room temperature in K
• TK = Tc + 273
• k = 11,600/n
• n= 1 for Ge & n = 2 for Si (for low levels of diode current)
• n = 1 for both Ge and Si (for high levels of diode current)
Diode Forward Current (ID) Equation
𝑘𝑉𝐷
1
𝐼𝐷 = 𝐼𝑆 𝑒 𝑇𝐾 −1
• IS is the diode saturation current and typical range of
values: 10-14 to 10-17 A/mm2
• ID is in the mA range for VD in the range 0.6 to 0.7 V,
typically
Temperature Effects on Reverse Saturation
Current, IS
𝑘 𝑇1 −𝑇0
𝐼𝑆1 = 𝐼𝑆 𝑒 2

• where:
• IS1 = saturation current at new temperature
• IS = saturation current at room temperature
• k = 0.07/ C
• T1 = new temperature
• T0 = room temperature
Temperature Effects on Threshold Voltage, VTH
𝑉𝑇𝐻1 = 𝑉𝑇𝐻 + 𝑘 𝑇1 − 𝑇0 3

• where:
• VTH1 = threshold voltage at new temperature
• VTH = threshold voltage at room temperature
(0.3V or Ge and 0.7V for Si)
• k = typically, – 2.5mV/C for Ge & –2.0mV/ C for Si
• T1 = new temperature
• T0 = room temperature
Sample Problem #1
• Using Equation 1, determine the diode current at
20°𝐶 for a silicon diode with 𝐼𝑠 = 50 nA and an
applied forward bias of 0.6 V.

𝐼𝐷 = 7.197 𝑚𝐴

Ronel V. Vidal, PECE

Sample Problem #2
• Repeat Sample Problem #1 for 𝑇 = 100°𝐶(boiling
point of water). Assume that 𝐼𝑠 has increased to
5.0 𝜇𝐴.

𝐼𝐷 = 56.35 𝑚𝐴

Ronel V. Vidal, PECE

Sample Problem #3
• Determine the diode current at 20°𝐶 for a silicon
diode with 𝐼𝑠 = 0.1 𝜇𝐴 at a reverse – bias potential
of −10 𝑉.
• Is the result expected? Why?

𝐼𝐷 = 𝐼𝑠 = 0.1 𝜇𝐴

The result is expected since the diode current under reverse – bias conditions should equal to saturation value

Ronel V. Vidal, PECE

Reverse Bias Condition
• The anode is made more negative with respect to
the cathode
• VD< 0V
• The current that exists under reverse bias condition
is called reverse saturation current, IS
Diode Characteristic Curve (Current vs. Voltage)
ID(mA) Ge Si
Forward – Biased
Region

VBR VBR VD(V)

VTH0.7V
VTH0.3V

Reversed – Bias
Region

Si Ge
 Forward Bias or Reverse Bias
1. 2. 3.

4. 5. 6.
Zener Region
• the operating region of the diode where the
avalanche breakdown occurs
• caused by the application of too much negative
voltage across the diode (negative to the anode)
• current increases rapidly in the direction opposite to
the positive voltage region
Zener Potential (Voltage), VZ
• the reverse - bias potential that results in the
dramatic change in the characteristic of a diode
• IS – reverse saturation current that depends on
the applied reverse – bias voltage
PRV (Peak Reverse Voltage) or
PIV (Peak Inverse Voltage) or
Reverse Breakdown Voltage, VBR
• the maximum reverse – bias potential that can be
applied to the diode before entering the Zener
region
Zener Region
ID(mA) Ge Si

Forward – Biased
Region
VBR VBR
VD(V)

VTH  0.7V
Reversed – Biased VTH 0.3V
Region

Zener
Region

Si Ge
Silicon vs. Germanium
• PIV: 1000V • PIV: 400V
• Wider temp. • Temperature range:
range: 200oC 100oC
• VT= 0.3V
• VT= 0.7V
• IS= 1 A
• IS= 10 nA
• Higher current
rating: 500 mA
End