Nanotechnology and Materials Technology Development 2006 R20

Conte nts
Int roduction ······································································································· i

Orga ni za tion of T his Brochure ··············································································· ii
• Na not echnology P rogram

Na not echnology Gl ass Project ················································································· 1
Na not echnology Metal Project ··············································································· 3
Adva nced Na nocarbon Appl ication Project ······························································· 5
Na not echnology P art icle Project ············································································· 7
Na nostruct ure Coa ting Project ·············································································· 9
Synt het ic Na nofunct ion Ma terials Project ······························································· 11
Na not echnology Material Metrology Project ····························································· 13
Project on Na nostruct ured P olymeri c Materials ························································ 15
Adv anced N anofabrication Process Technology U sing Quantum Be ams ······················· 17
Full color Rewr itabl e Paper U sing Functional Capsules Project ·································· 19
Nanostructure Forming f or Cer amics Integration Project ··········································· 21
R&D of 3D NanoScal e Certified Reference Materia ls Project ······································ 23
Adv anced Dia mond Dev ice Project ··········································································· 25
Carbon N anotube FED Project ··············································································· 27
Hi ghly Funct ional Nanotechnology Gla ss Project for Photonic Devices ························· 29
Hi gh- St rength Nanotechnology Gla ss Project for D ispla ys ········································· 31
• Innova tive Materials Devel opment Program

Adva nced E valua tion Methods R esearch P roject for Na noscale S emiconduct ors
······················································································································· 33
• Program for F unda ment al Technologies of Adva nced Infor mation a nd
Telecommunicat ions Equi pment and Devices
Development of Phonic Network Technology ···························································· 35

Development of Hi ghly-C apacity Optical Storage Technology ······································ 37
MEMS Project ····································································································· 39
•Basic Technology Research Promotion
Research on High-Resolution and High-Speed
Composition Analysis of Nanometer-Thick Films ······················································ 41
Rugate Filters ····································································································· 43
Development of Nanoparticle and Nano-Thin-Film Phosphors for FED ························ 45
Study of GaN on Si Power Devices ········································································· 47
Development of a Drug Delivery System Making Use of Biodegradable Nanocomposite
Polymer Particles ································································································ 49
Development of Basic Technology for High Density Surface Mount
Next-Generation Semiconductor Devices ································································· 51
Advanced UV-B and C Optical Semiconductor Devices ··············································· 53
Development of Ultra-high-speed InP Epitaxial Crystal Manufacturing Technologies ······ 55
Functional Nanoprobes for Bioproperty Mapping ······················································ 57
Development of the World First Cathodluminescence and Raman Spectroscopic
Systems Using a Near-field Spectroscopic Technique ················································· 59
Index of Key Words ······························································································ iv

Introduction
Nanotechnology is an advanced technology that has received a lot of attention for its
ability to make use of the unique properties of nanosized materials. Nanotechnology is
capable of manipulating and controlling material structures at the nano level (a
nanometer is equal to one millionth of a millimeter) and offering unprecedented
functions and excellent material properties. Nanotechnology consists of the “top-down
approach” and the “bottom-up approach.” In the former approach, the sophistication of
fine processing technologies, such as semiconductor manufacturing, can lead to the
processing of nanosized fine structures. In the bottom-up approach, self-organization
properties inherent in materials can be utilized to assemble nanosized fine structures
from the atomic or moleculer levels. Nanotechnology, including nanostructured material
metrology to accurately determine physical properties at the nanolevel, is considered a
strategic technological area that goes beyond conventional technologies, potentially
leading to a paradigm shift in new industrial technologies.
The basic concept of nanotechnology first emerged half a century ago. Actual
observation and manipulation of nanosized atoms became possible when scanning
tunneling microscopes came into practical use in the first half of the 1980s. Since the
United States launched its National Nanotechnology Initiative (NNI) in 2000 as a
strategic governmental research program, global nanotechnology research and
development investment has been on the rise.
As stated in the “Science and Technology Basic Plan” (March 2001) and “Promotion
Strategy of Prioritized Areas” (September 2001) of the Cabinet Office’s Council for
Science and Technology Policy, Japan considers nanotechnology and nanomaterials to
be key areas for the 21st century that will support a wide range of scientific and
technological breakthroughs. Moreover, they are priority technologies essential to the
sustainable development of economic society and enhancement of industrial
competitiveness. Given their importance, the Japanese government has designated
nanotechnology and materials as one of four priority areas for enhanced research and
development over the next five years. NEDO, Japan's largest public R&D
management organization for promoting advanced industrial technology development,
has been carrying out various activities related to nanotechnology in recent years.
Nanotechnology is indeed a key technology for innovative development in various
industrial technologies, and it is expected to contribute to significant energy
conservation and environmental burden reduction in the future. Because of this, NEDO
allocated 16.3 billion yen to activities concerning nanotechnology and materials in its
FY2005 R&D budget of 148.1 billion yen.
This brochure describes NEDO’s research and development projects that involve the
collaborative efforts of government, industry and academia in the area of
nanotechnology as well as research and development support provided to private sector
enterprises.
i
Organization of This Brochure
This brochure describes NEDO's projects in the area of research and development on
nanotechnology. The projects are grouped into the four research and technology
programs outlined below.
Nanotechnology Program
Controlling materials at the nano level can enhance material functions and
characteristics, leading to considerable energy savings and environmental load
reduction. Nanotechnology is a major advance capable of bringing extraordinary change
to various industrial technologies, and thus the establishment of nanotechnology is vital.
Knowledge gained from nanotechnology should be systematized to establish a
technological base that can contribute to sustainable development of Japan's economy
as a basic resource of industrial competitiveness.
Innovative Materials Development Program

The materials area is one of the strong points of Japanese industry. In this area,
timely provision of solutions (commercialization of parts and products) can be achieved
by manufacturing system technologies that shorten the lead time for production, and by
technologies combining material development and fabrication technologies, making full
use of material functions and properties. In this way, the program aims to establish
high-value added material industries (a materials industry and a components industry)
for creating new markets and jobs and to enhance the international competitiveness of
Japanese industry.
Program for Fundamental Technologies of Advanced Information and

Telecommunications Equipment and Devices
Research and development on information and telecommunication technologies will be
conducted to develop information and telecommunications equipment and devices for
constructing advanced communication networks. The program aims to create a more
prosperous society while also considering environmental load reduction and
standardization of technologies for promoting practical application and market
dissemination.
Research and development program: A policy package of research and development

projects that the Ministry of Economy, Trade and Industry considers essential to achieve
strategic policy goals related to industrial technologies that are established by analyzing
social needs, market trends and technology trends both in Japan and abroad.
ii
Research Phases Described in This Brochure
Commercialization
Development for
Basic Research Applied Research
Practical Application
Research and Development Projects
Focus 21 projects*
Basic Technology Research Promotion Activities
(Solicitation of proposals for research themes)
*About “Focus 21”

Some of the projects described in this brochure are “Focus 21” projects that emphasize
development for practical application in order to stimulate the economy. Focus 21
projects must meet the following four conditions:
1. Technical innovation leading to enhanced competitiveness
2. Prospect of findings from research and development that will result in new products
and/or services
3. Possibility of creating new markets in a relatively short period of time that will
result in significant growth and economic ripple effects
4. Willingness and specific efforts by industry to provide funding for realizing
commercial market introduction.
Basic Technology Research Promotion (Private Sector Basic Technology Research

Promotion Activities)
Unlike its research and development programs, NEDO’s basic technology research
promotion activities involve the solicitation of proposals for research themes related to
mining and manufacturing basic technology, and entrustment of actual research work
to private sector enterprises that propose high risk but promising research themes. In
Japan, private sector enterprises undertake most of the research and development
activities. This brochure describes research themes related to nanotechnology that are
representative of NEDO's basic technology research promotion.
iii
Nanotechnology Glass Project
Keywords: Glass, Sub-wavelength structure, Telecommunications

R&D Term: FY2001᳸FY2005ų Budget of FY2005:410 million yen
Background
ųThe Nanotechnology Glass Project is intended This project aims to further increase the levels
for the development of fundamental of these advantages. Japanese industry will䇭
technologies for glasses with completely new extensively utilize the outcome obtained from
functions by controlling structure on a this project and will cultivate new leading
nanometer scale. It is primarily known that markets in the fields of optical communication,
glass is transparent, hard and stable thermally energy and environment. It will also contribute
and chemically. to international society.
Organization
Project Leader䇭
䇭Professor䇭K䋮HIRAO䇭Kyoto university
Participating Organizations
New Glass Forum
National Institute of Advanced Industrial Science and Technology
Prof .K. HIRAO
Contents
[Ძ] Telecommunications 1.0

Diffraction efficiency (-)
TE TM
Ყ Storage Ყųųųųųųųųųųųų 0.9
Precise fabrication technology for wavelength- 0.8 TE

30o TM
level periodic structures on a glass surface is 0.7
calculated
being developed using semiconductor 0.6
by RCWA
5μm
microfabrication technology, including
0.5
lithography and dry etching. For example, the 1.48 1.52 1.56 1.60 1.48 1.52 1.56 1.60
etching rate of the glass could be vertically Wavelength (μm) Wavelength (μm)
controlled by doping several additives, realizing Diffraction efficiencies and cross sectional SEM
fabrication of a rectangular periodic structure views of diffraction gratings before (left) and
with a 200-nm grove width and an aspect ratio of after (right) overcladding
6. Furthermore, resistance against mechanical Also, a high recording density DVD that can
shock was remarkably improved by overcladding record high definition TV images for 24 hours
on the periodic structure. It was demonstrated has been developed in this project. This
that this technology was applicable to an ultra- research was transferred to the Focus 21
small demultiplexer on a glass plate of 6 x 9 mm. Project in order to accelerate R&D for practical
This project aims to construct the basic application.
technology to fabricate optical memory heads,
which will provide high angular dispersion for a Ყ CommunicationsᲧų ųųųųųųų
so-called “super prism”. Optical fiber networks have begun to spread
instead of metal networks due to increased
Concave Internet traffic. There is a strong requirement of
mirror Ultra-small 4-channel small and low-cost optical devices, which can be
demultiplexer
Arrayed
waveguide
used even in a harsh environment. This project is
designed to operate at
Buried output
grating around 1550-nm
developing new glasses for low-loss optical
2mm wavelength waveguides, athermal optics and micro-lens
Arrayed waveguide
input arrays. Also,
1
femtosecond laser irradiation is being used for phosphor has continued for more than a half year,
fabrication of optical waveguides, gratings, and its intensity is three times as high as that of
diffraction lenses and three dimensional periodic the phosphors currently used. In the future, nano
structures inside glass, which are key elements particles in glass will be employed for the display
for three-dimensional optical circuits. and lighting using UV-LED as an exiting light
source.
O
O
O
[Წ] Energy
PL of Ag grating Beam profile Pattern shape ųA method to modify the inner wall of numerous
Micro pattern formation through pores of 4-nm diameter in a glass with
conductive organic molecules has been developed.
Conductive organic-inorganic hybrid material
Ძ᳧᳧ 3D optical circuit
developed by this method exhibits a conductivity of
Examples of micro optical elements 10-1 S/cm at 140°C. This material is expected to be
utilized as the membrane for a direct methanol
fuel cell, which is attracting attention as a clean
Ყ DisplaysᲧųųųųųųųųųųųųųųųų
energy source. The project will continue to study
New technology to improve the strength of glass
the increase in degree of orientation of conductive
is being studied in order to contribute to weight
paths in order to improve the conductivity.
savings of flat panel displays. Crack propagation
was suppressed by the formation of a
heterogeneous phase inside glass by irradiation
with a focused femtosecond laser beam, resulting 2 inch
in an increase of mechanical strength by 1.8 1
Conductivity䇭(S/cm)
times. Further increases in strength are now Nafion® Hybrid glass
(RH=90%) (RH=100%)
being attempted. This process can be applicable to 0.1
the strengthening of thinner glass plate, and it Hybrid glass
has an advantage over traditional heat-treatment 0.01 (RH=90%)
Nafion®
and ion-exchange methods in the aspect of energy (RH=100%)
consumption. 0.001
30 50 70 90 110 130 150
Temperature (oC)
Crack Image of Fracture
Photograph of Fracture
Heterogeneous Organic-inorganic hybrid membrane with high proton

phase conductivity (left) and temperature dependencies of
conductivities of membrane and Nafion (right)
[Ჭ] Environment
ųSilica based “molecular sieving membranes”
Crack propagation is suppressed by heterogeneous phase have been developed with 20% aligned pores,
which could be fabricated by applying an electric
Suppression of crack propagation by heterogeneous field to SiO2-sol film dispersed with liquid crystal
phase followed by the calcination of film to remove the
organic components. These membranes can be
Dispersion technology for size-controlled used to separate CO2, which is a source of global
semiconductor nano particles in glass matrix has warming, and H2 for next㵥generation fuel cells.
been developed without degradation of
photoluminescence efficiency. An emission
efficiency of more than 40% has already been
achieved. At this time, the emission from this
Contact Information
New Energy and Industrial Technology Development Organization
Nanotechnology and Materials Technology Development Dept.
Tel:+81-44 - 520-5220
New Glass Forum
Tel :+81-3 -3595-2775 http://www7.big.or.jp/~cgi19786/ngf/indexe.html
2
Nanotechnology Metal Project
Keywords:Metal, High purity, Structure R&D Team:FY2001᳸FY2006 Budget of FY2005:300million yen
Background
The objective of this project is to achieve Project research on ultra-high purity metallic
dramatic improvement in the mechanical and materials is based on controlling impurity
functional characteristics of metal materials by concentration at the nano order level and on
controlling their composition and structure to controlling structure at the nano size level.
ultra-dense and ultra-fine levels.
Organization
Project Leader
Professor㩷 A. INOUE Tohoku university
᫊ϙჇ
Participating Organizations㩷
ᲢȋȤȃᲣ
Osaka Science & Technology Center.
Japan Research and Development Center for Metals㩷,
Hitachi Metals, Ltd.
Prof. A.INOUE
Contents
[1] Ultra High Purity Metals and plasticity. In the case of 50%Cr alloy, there
— Heat and Corrosion Resistant Materials is no sigma phase precipitation, with high
Developed Using Nano metallurgy — temperature properties and corrosion resistance
Ultra high purification of metals such as iron that far surpass conventional expectations.
(including alloys) is revealing new properties Anticipated applications include high
heretofore unknown. For example, iron that has temperature materials in thermal power plants
been ultra-purified to above 99.999% hardly and chemical plants.
reacts at all with hydrochloric acid at room
temperature. And, while industrial grade 99.9%
pure iron suffers brittle fracture when subjected
to deformation in liquid nitrogen (77K), ultra high
purity iron exhibits good plastic deformation at
cryogenic temperatures.
For most metals, surprising properties become
apparent when ultra-purified to a level of within
100ng of impurities per gram of metal.
Laboratory research on ultra high purity metals (a) Ultra high purity (b) SUS316
has opened up the field of Nano metallurgy, Fe-30Cr alloy
underpinning the development of innovative new
Stress corrosion fracture susceptibility test (U
metallic materials that will be indispensable in
bend) (Test conditions: 300˚C, 8.7MPa, 10%NaOH
the 21st century.
bath x 100h)
Ultra high purity Cr-Fe alloys are an example
of the results of research on Nano metallurgy.
Although the corrosion resistance and strength of
Cr-Fe alloys are increased with higher amounts of
Cr, severe work-hardening and brittleness have
imposed a practical limit of 30%Cr. In the case
of ultra-purified 35%Cr alloy, however, absorption
energy and strength are so high as to stop a
Thermal power plants Chemical plants
hammer on a test piece during Charpy impact
testing. This material also demonstrates
extremely low susceptibility to stress corrosion
cracking, as well as excellent corrosion resistance
3
[2] High Strength Steel Using Cu Nano [4] Nano Multistructure
precipitation
To promote efficiency in time and money
The aim of this fundamental research is to
consuming material development, the goal of this
investigate leading principles for realizing high
research is to establish a technique for controlling
strength steel with excellent ductility.
structure with nano clusters and to provide nano
Improvement of mechanical properties of steel
structure simulation software to researchers.
with precipitated Cu clusters of nanometer size is
Thus far, an analysis of the nuclear creation
being investigated. With studies on thermo-
phenomena of early stage alloy structure creation
mechanical treatment of Cu containing
and the composition analysis of material
martensite steel supported by computing
properties have been made. A simulation of the
science, an excellent level of the strength/ductility
width of a precipitation free zone has also been
balance index, TSxEl, as high as 17000 MPa᳽% undertake.
has been realized.
㪈㪍
㪈㪌 Aged at 450㷄
TS x El
㪈㪋
㪈㪊
17000
㪈㪉 Aged at 450㷄 4%Cu Steel
㪜㫃㩷㩿㩼㪀
㪈㪈 Aged at 250䌾350㷄 15000
㪈㪇 13000
㪐 0%Cu Steel
㪏 11000
JIS13B, 2.7䌾3mmt
㪎 (12.5mm w x 50mm G.L.)
Aged at 250䌾350㷄
㪍
㪏㪇㪇㪈㪇㪇㪇㪈㪉㪇㪇㪈㪋㪇㪇
㪫㪪㩷㩿㪤㪧㪸㪀
[5] Ultra Tool Steels
Tool steels are important materials for the
[3] Copper Alloys for Electrical and Electronics automobile industry and the information
Devices technology industry to produce various parts.
In line with the downsizing of IT devices, In particular, excellent properties that the
higher reliability of conductive material is conventional steels cannot achieve have been
required. Moreover, 65 nm and smaller required for the hot working tool steels, as the
technology nodes are expected for semiconductor hot working techniques progress.
manufacturing. Controlling the nano structure of The objective of this research is to achieve
materials, the goal is establishment of a dramatic improvement in the mechanical
technique to make high strength copper alloy characteristics of metal materials by controlling
without sacrificing electroconductivity, and their composition and structure to ultra-dense
reduction of the critical width of copper wiring. and ultra-fine levels without using large
Up to now, TS 900MPa and 50%IACS have almost amounts of expensive alloying elements. (Fig.1)
been achieved. Tool steels will be applied to a wide diversity
of uses, for example, hot working dies with
high strength and softening resistance, cutting
tool materials, high strength cold working dies,
and hot forging dies with excellent heat-
resistance, etc.
temperature strength High
High speed Matrix

steel high speed
SKH51 steel Objective
of this
ŔŌŅĹ research
ŔŌŅĸ Fig.1 Notional

illustration of
Elevated
ŔŌŅķĲ
Hot working tool steels
the objective of
(JIS grade)
ŔŌŕĵ this research
Toughness High

Contact Information
Nanotechnology and Materials Technology Development Dept. Tel: +81-44-520-5220
Osaka Science and Technology Center Tel: +81-6-6443-5326 http://www.ostec.or.jp
Japan Research and Development Center for Metals Tel: +81-3-3592-1284 http://www.jrcm.or.jp
Hitachi Metals,Ltd. Tel: +81-854-22-1919 http://www.hitachi-metals.co.jp
4
Advanced Nanocarbon Application Project
KeywordsᲴNanotube, Fuel cell, LSI wiring R&D TermᲴFY2002᳸FY2005 Budget of FY2005Ჴ1.0 billion yen
Background
The objective of this project is to develop and Industry) to stimulate the Japanese economy.
fundamental technologies for nanocarbon In the project , two R&D themes are emphasized
materials such as a single wall carbon nanotube in particular.
and nanohorn. It is intended to develop The first is to establish electrode material
mass-production technology by properly technology for carbon nanohorn on which catalyst
controlling specific nano-structure, to develop is effectively embedded in order to help
basic technology to satisfy desired physical and development of fuel cells used for mobile IT
chemical characteristics by way of reprocessing devices such as mobile phones and PCs. The
and modification of the produced nanocarbon second is to develop application technologies for
materials, and to apply IT devices by growing LSI wiring by applying excellent electric
nanocarbon on the substrate under proper control conductivity and mechanical strength inherent to
of material properties and orientation. It is also the carbon nanotubes.
intended to develop nanostructure It is intended to actively apply whatever results
characterization technologies, which are vital to gained in this project to various industrial sectors
develop the above fundamental technologies. such as the energy sector, IT sector and chemical
This project is one of the Focus 21 Projects and environmental sector to advance use of
launched by METI (Ministry of Economy, Trade nanocarbon material.
Organization
Project Leader
Dr.S. IIJIMA
Japan Fine Ceramic Center
National Institute of Advanced Industrial Science and Technology.
Dr. S. IIJIMA
Contents
[ Ძ ] Structural Control and Mass Production single wall nanotubes. In addition, we improved
Technology recovery efficiency and synthesizing efficiency in
Mass production and application technology for nanohorn production.
a multi-wall nanotube is at the stage of
commercial consideration. For the single wall
nanotube, it is still at the stage of basic research.
In this project, we targeted the development of
structural control technology and mass
production technology in the latter aspect,
namely a single wall nanotube and nanohorn as
well.
By simultaneously developing various
technologies such as the fluidized bed method and
floating catalyst method to synthesize a single
wall nanotube by applying catalyst on
hydrocarbon, and the laser ablation method to Single wall nanotube Equipment to Synthesize Single Wall
produce nanohorn without catalyst, it is intended after refine Nanotube by Floating Catalyst Method
to establish optimum mass production technology
as soon as possible and to boost and accelerate
development of other application technologies. [Წ] Electrode Material Technology for Fuel Cells
Through successful establishment of catalyst The capacity of current secondary lithium
technology for a fluid bed reactor, we developed batteries used for mobile devices has reached
synthesizing technology for a single wall the limit. Thus, new next-generation batteries
nanotube. In the floating catalyst method, we need to be developed. Once nano-carbon material
developed technology to continuously synthesize is applied, continuous operation of a note book PC
5
can be made possible as long as hydrogen or expected that technology can be developed for a
alcohol is supplied because the energy density of new transistor made of nanotubes. In this R&D,
fuel cell is about 10 times greater than that of a emphasis is placed on the development of LSI
lithium secondary batteries. For actual wiring that is expected to be complete at a rather
realization of this new battery, we need to clear early stage. So far, we succeeded in the
the hurdle of development of an improved development of technology to have nanotubes
nanocarbon electrode embedded with catalyst. It grow at a selected orientation in via holes by
is nothing more than the development of means of the chemical vapor deposition (CVD)
improved technology in the process of method.
nanodispersion of platinum catalyst and the cost
performance. At this point it is known that carbon
nanohorn can yield a better result in this respect
compared to conventional carbon black materials.
It is promising to make a big step toward
successful utilization of a nanocarbon battery
with increased power output once carbon
nanohorn is applied to the electrode of fuel cells in
place of conventional carbon black material. We
succeeded in prototype production of a fuel cell
with compact but higher power capacity used for
mobile electronics devices, and proved that such a
fuel cell could be practically applied to mobile
phones and mobile PCs. Cross-sectional Structure of Via Interconnection and

Carbo n nanohorn MOSFE
aggregate
Pt catalysts Pt catalysts (dark spots)
supported on carbon
[4] Nanostructure Characterization Technology
Fuel CH3OH
e
H+ O2 Air nanohorns The ultimate characteristics of the carbon
e
nanotube will be clarified through removal,
Proton Exchange
CO2 H2O
replacement and addition of certain atoms, and

Electrode
Electrode
Membrane
50nm
㪌㪇㩷㫅㫄㩷
e
e e Fuel cartridge the affected characteristics of nanotubes will be
e
(Methanol inlet) clarified by nanostructure changes will be
clarified. Also planned is to analyze and identify
Schematic drawing of the atoms in the structure of nanocarbon material
direct methanol fuel cell
to enable application to devices with higher
Internal fuel cell
reliability.
It is intended to study nanostructure, tube
Prototype of portable notebook PC
diameter, length, chirality, shape and behavior of
with an internal direct methanol
fuel cell
catalyst as well as growth direction and density of
nanocarbon materials. It is also intended to
[3] LSI Wiring Technology disclose useful information such as the difference
Carbon nanotubes allow the passage of a huge in chemical bonds before and after gas absorption
current density that is about three orders of and the structure and distribution mode of
magnitude more than that of conventional wiring catalyst used for fuel cell application. Further, it
copper metal. This implies that a high is intended to observe the specific interface
performance and highly reliable LSI can be between nanocarbon material and electrodes and
developed if it is applied to wiring material for to measure in-situ electric characteristics of a
multi-level interconnections. Further, it is specific nanocarbon material.

Contact Information
Tel:+81-44-520-5220
Tel +81-29-861-9417
http://www.aist.go.jp/index_en.html
6
Nanotechnology Particle Project
Keywords: Nanoparticles, Functional devices, Electronics & Information.

R&D Term: FY2001᳸FY2005 Budget of FY2005:520 million yen
Background
This project aims at establishing a platform Nanoparticles are of interest because their
for developing synthesis and functionalization chemical and physical behavior are unprecede
technologies for nanoparticles, which are imp nted and different from those in bulk form.
ortant for producing nanostructures and exhibi Nanoparticles have great potential for use in
ting nano-functions. electronic, photonic, chemical and mechanical
industry and other application.
Organization
Project Leader
Professor K. OKUYAMA Hiroshima university
Participating Organization
Japan Chemical Innovation Institute
Prof. K. OKUYAMA
Contents
such as oxide, magnetic, semiconductor, phosphor
[1] Synthesis of Nanoparticles and metallic nanoparticles, as basic technology
To establish technology for synthesizing to scale up to industrial production process.
nanoparticles adaptable to the various fields of A typical example of the quantum size effect is
electronic information, photo-functions and when luminescent spectra from luminescent
composite materials, we intend to develop the semiconductor nanoparticles, which can be
most suitable synthetic method. The techniques controlled from the range of blue to red depending
used for synthesizing nanoparticles and related on particle size.
targets are summarized in the figures shown
below. We will establish synthesis of nanometer
sized, uniform and stable particles,
Gas-Phase Synthesis Liquid-Phase Synthesis

Targets
CVD Method Spray Pyrolysis Sol-Gel Method Micellar Method
Particle
1䌾10 nm
Reactive Reactive Size :
Monomer Sprayed Monomer
Droplets Chemical Distribution With coefficient
Chemical Coagulation
Reaction Evaporation Reaction variation of㩷 10%
or less
Solidification Monomer
Monomer Condensation
Condensation
Decomposition Particle
Homogeneous Micellar With aspect
Nucleation Dried Chemical Shape :
Particles Reaction ratio of 10%
Clusters or less
Sintering
Production 100 g/h or more
Cryst allization Homogeneous Rate :
Clusters Nucleation
Chemical Agglomeration
Reaction Micelle
Nanoparticles
Nanoparticles Nanoparticles Nanoparticles
7
[3] Composite of Nanoparticles and Polymer
It is very difficult to mix nanoparticles with
resin mechanically and to obtain uniform
dispersion of nanoparticles in composites. We
intend to develop technology to obtain a uniform
dispersion of nanoparticles in the resin by (1)
loosening the agglomeration of nanoparticles, and
(2) treatment of nanoparticles with organic
compounds, etc. Since the size of nanoparticles in
the resin is smaller than the wavelength of visible
light, the composites or films are transparent in
the visible region in the figure shown below.
Through the expression of function/properties
Photoluminescence of CdSe nanoparticles having of nanoparticles and the application of basic
different sizes : 2.0nm (blue), 3.5nm (green) and technologies, it is possible to create composite
4.5nm (red). materials, that can be used in a wide range of
application fields having excellent thermal,
[2] Organization of Nanoparticles electric, mechanical and photo-functional
We intend to develop technology to fabricate properties.
thin film of ordered nanoparticles by
arrangement and deposition on substrate.
We also intend to develop novel process for
arrangement of nanoparticles in the gas phase
using the attractive force between charged
nanoparticles and counter-charged patterns on
the substrate.
We aim to achieve high performance
nanoparticles for use in different kinds of devices.
200nm
70nm Nanoparticle 70nm Nanoparticle

Line Arrangement Dot Arrangement
200nm
(TEM photograph) (Appearance)
(Top) Conventional method
(Bottom) Transparent nanocomposite film
Contact Information
Tel:+81-44-520-5220
Tel:+81-3-5283-3260
http://www.jcii.or.jp/
8
Nanostructure Coating Project

Keywords:Coating, Microstructure, Energy R&D Term:FY2001᳸FY2006
Budget of FY2005: 310 million yen
Background
The Nanocoating Project’s aim is to establish nano-level, will be developed based on efficient
technology for coating ceramics onto metallic processing techniques, theoretical methods, and
substrates to act as thermal and environmental rapid and detailed evaluation technology. In
barriers, thereby reducing a device’s energy addition, the project aims to systemize this
demands and environmental burden. technology and establish coating engineering as a
Nanocoatings, i.e., coatings containing particles, field in its own right.
pores and interfaces precisely controlled at the
Organization
Project Leader
Professor T. YOSHIDA University of Tokyo
National Institute of Advanced Industrial Science and Technology .
Prof. T. YOSHIDA
Contents
Ĭ Processing Technology
Technology is needed for rapidly producing
nanocoatings with nano-level precision. Process-
ing methods in use include Thermal Plasma
Spraying (TPS), Physical Vapor Deposition (PV
D) and Chemical Vapor Deposition (CVD). TPS
enables coatings to be produced rapidly, but
controlling the structure at the nano-level is
difficult. In contrast, PVD and CVD provide good
control over formation of nano-level struc tures,
but the deposition rate is low. In this project,
TPS methods that allow better nano- level
control will be developed alongside high Twin Hybrid Plasma Spraying System
deposition rate PVD and CVD methods. These
will form the basic processing technologies for
rapid production of nanostructured coatings.
ĭ Technology for the Design and Control of

Nanocoating Structures and Properties
Materials for thermal barrier and corrosion
resistant coatings need to be thermally insulating,
possess high thermal stability and be resistant to
spalling and oxidation. Currently used coating
materials do not possess these characteristics
because they consist of coarse, micron-size grains
and pores. Consequently, their use in gas turbines
is limited to turbine inlet temperatures below
1200㷄. Electron Beam (EB)-PVD Equipment
9
In order to radically improve the above-mentioned techniques spanning nano- to macro-scales are
properties, each component of the coating not yet available.
system (top coat, bond coat and substrate) and
the interfaces between them need to be contr Furthermore,with regards to lifetime prediction,
olled via: property evaluation and non-destructive testing
ȷDesign of optimized structures on the nanometer techniques, most methods are at least partly
scale using computer simulation empirical, and quantitative evaluation and
ȷPrecision fabrication of coating structures using analysis techniques under precise experimental
the techniques developed in Ĭ above conditions currently do not exist. In this
project, therefore, non-destructive techniques
ȷAccurate analysis and evaluation of nanocoating
based on comprehensive performance analysis
properties
and multi-scale computer simulations spanning
This will result in the development of novel
the nano- to macro-levels are being developed
coating materials with superior thermal
for evaluating dynamic interface properties
insulation behavior, thermal stability and
and predicting the life-time and reliability of
interface properties (including reduced sintering
nanocoatings.
rates, greater oxidation and spallation resistance,
and higher phase stability).
į Systematization of Materials Nanotechnology
Based on Interfaces between Different Materials
Į Performance Analysis and Evaluation
In order to systemize the study of nanotechnology
Technology
based on the nature of interfaces between
In order to develop nanocoating technology, it is
different materials, the new field of “coating
important to know how each component of the
engineering” will be established, and a coating
coating performs under service conditions. The
materials database for use in real applications
calculation methods currently available are
will be created.
limited in scale; multi-scale simulation
Microstructure of New TBC System Development of an EB-PVD Technique for

Coating Functional Perovskite Oxides
Contact Information
Tel:+81-44-520-5220
Japan Fine Ceramics Center
Tel:+81-52-871-3500
http://www.jfcc.or.jp/
10
Synthetic Nanofunction Materials Project

Keywords:Nano-simulation, Molecular-sensor, Spin-electronics, Nanofabrication
R&D Term : FY2001᳸FY2005 Budget of FY2005:230 million yen
Background
This project aims at the fabrication of design, novel structure-function relationships on the
theoretically-designed nanostructures, and its ultimate nanometer scale are being explored. Their validity in
goal is the technical establishment of creation of the frontier fields of spin-electronics and molecular
artificial materials providing extremely high nanotechnology are also being demonstrated.
performance. On the basis of a computational material
Organization
Project Leader Dr.H. YOKOYAMA
SII Nanotechnology Inc. FUJITSU Limited. SUMITOMO CHEMICAL
TOHOKU university. OOSAKA university
Dr. H. YOKOYAMA
Current Results
[1] SimulationᲠ Molecular Sensor
-Development of nanosimulation technologies- metal surface to elucidate a mechanism for molecular
On the basis of theoretical modeling and simulation, self assembly, nanostructure formation in polymer thin
the aim is to predict various novel functions of 10 films, and investigation of an adhesion mechanism
nm-scale materials with special emphasis on for a peptide molecule on origo ethylene glycol
controlling various molecular properties as shown in self-assembly monolayers, which are important
Figure 1. subjects in applications of nanotechnology. (Fig. 2)
(1) A high speed mesh Evald method was developed
as an order N method with coulomb interaction for a
three-dimensional structure with a two dimensional
periodical boundary condition like molecular film on
the surface of metal plate.
(2) An efficient computational algorithm of molecular
dynamics was developed for structural change of a
nanomolecule system composed of a partial rigid body
with a long relaxation time over several tens of nano Figure 1. Multi-time step integrator for a semi-flexible
seconds. model
(3) A coarse-grained particle model and dissipative Target molecule
e-
particle dynamics method was developed to calculate
molecular interaction of nanostructures. S S
-Application research on nanostructures-
The above nanosimulation methods were applied to Figure 2.Molecular sensor bridged between electrodes
structure the prediction of monomolecular layers on a placed at nanoscale distance
11
[2] Spin Electronics compared to conventional lithography methods. This
Hard disk drive (HDD) capacity has remarkably technique can push the limit of miniaturization. The
increased using a giant magneto-resistance effect used final goal of this project is fabrication of patterns
spin polarized current in which polarized current plays consisting of 10 nm wide lines within a 10 mm area
the crucial role. Thus, electron spin has the potential with an accuracy of 1 nm. (Fig. 4)
of opening the door to new devices not previously
possible, and semiconductor spin is a hot topic in the
spintronics (spin electronics) field. In this research,
new nanostructures that exhibit the world largest
magneto-resistance effect at room temperature have
been successfully fabricated. (Fig.3)
The material in the nature of 100 % spin polarized at
the Fermi level is called as a half metallic ferromagnet.
If it becomes possible to use such material for a
magnetic sensor and magnetic random access memory Figure 4. AFM image of an oxide lattice on Si surface
( MRAM ) with magnetic tunnel junctions, ( line width of 15 nm and spacing of 100 nm)
performance will be remarkably improved.
Theoretical predictions of half-metallic material were In order to evaluate the relationship between function
made using ab-initio calculations, and attempts were and structure of nanostructured material, a “laser
made to synthesize the predicted materials using nano-prototyping” process was developed (Fig. 5).
molecular-beam epitaxy. Monodispersed magnetic core-shell nanoparticles are
synthesized by laser ablation and a size classification
technique aimed at magnetic nanoparticles is expected
to be used for ultra-high-density magnetic recording
media.
Figure 3. Magnetic resistance switch device
[3] Nanomanufacturing Technology Figure 5. Laser nanoprototyping technology

Anodic oxidation using a scanning probe microscope
offers convenient and on-demand nanofabrication
Contact Information
Tel:+81-44-520-5220
Tel. +81-29-861-9417
http://www.aist.go.jp/
12
Nanotechnology Material Metrology Project
Keywords: Nanoparticle, Nanopore, Surface, Thin film, Thermophysical property, Reference material
R&D Term: FY2001㨪FY2007 Budget of FY2005: 210 million yen
Background
The Nanotechnology Material Metrology Project range for various measurements commonly used
will provide a definite solution, by developing the across different technical fields and for
nanoscopic measurement standards, to assure facilitating the dissemination of the results of
any results of measurement in the nanoscopic nano R&D to the manufacturing sector.
Organization
Project Leader
Dr.M. TANAKA
Dr. M. TANAKA
Contents
Fine particles
There is a need to accurately evaluate
nanoparticles as a building block of nano
structure, as well as fine particles, for the purpose
of quality management of semiconductors,
environmental control of exhaust gases and so on.
One of the key technologies to attain this
objective is to supply accurate reference material
for particle diameter. AIST has been supplying
the world’s most precise standards for a particle
diameter of 100 nm and is currently striving to
develop nanoparticle reference material for a
range of even smaller diameter. Principle of a Method for
In this project, practical application of a new
technique for measuring the mass of fine particles Aerosol Particle Mass Analysis
is being pursued using the equilibrium between Nanopores
centrifugal force and electrostatic force both
Porous materials with nanopores of a few
working in on particles. In the field of polymer
nanometer diameter are attracting attention as
materials, the diffusion coefficient of polymers
low-k dielectrics for the wiring system of next
and nanoparticles in solution is measured with
generation semiconductor devices. In order to
precision using dynamic light scattering and
measure such nanopores, the development of a
nuclear magnetic resonance, and the average
positron annihilation method will provide
particle diameter is determined. Furthermore,
information regarding both the average size and
scattering pattern measurement is being
size distribution of nanopores by calculating
conducted on samples separated by size exclusion
positron lifetime based on the energy distribution
using multiangle laser light scattering (MALLS),
of gamma rays generated by position annihilated
leading to the establishment of a technique to
in the samples, which is found in nanopores
accurately measure particle distribution.
having sub-nm to 10 nm material scale. There is
also a need to measure the period of gamma ray
emission.
13
In this collaboration project with the Photonics
Research Institute, a popular-type compact-size X-ray e-
positron lifetime spectrometer that utilizes a
positron beam obtainable from a radioisotope is
being developed.
A thin film sample on the holder

Thermophysical Properties
Thermophysical properties of thin films such as
thermal diffusivity, specific heat capacity,
thermal conductivity and thermal expansion
coefficient are indispensable in terms of thermal
and structural designing.
In this project, the thermal change on the reverse
side of thin film is being observed referring to the
change of reflectance to a laser beam, by heating
the film surface using a pico-second laser (the
Compact-size Positron Lifetime Spectrometer
pico-second thermoreflectance technique).
Surface Structure
Measurement technology will thus be created for
X-ray photoelectron spectroscopy (XPS) and
the thermal diffusivity of thin films and the
Auger electron spectroscopy (AES) are widely
coating material, boundary thermal resistance
used as the means of characterization of surface
between thin films, and boundary thermal
composition, electronic state, etc. of materials
resistance between the coating and the base
that have functional surfaces, such as thin films,
material. By means of a laser interferometer,
catalysts, sensing devices and so on. The target of
technology to accurately measure the coefficient
the project is development of tunable
of thermal expansion of solid materials will be
photoelectron spectroscopy technology with
established.
synchrotron orbit radiation as an excitation
source. Also, the objective is the establishment of
quantitative reliability of conventional XPS and
AES excited by KD-ray of Mg and Al.
In addition, a database for surface analysis is to
be constructed based on the collection of a
standard spectrum of samples whose physical and
chemical change is kept to the minimum. A
technique to eliminate background distortion of
spectrum causes by inelastic scattering of
photoelectrons is also a subject of the study. Illustration of the Picosecond
Thermoreflectance Measurement System
Contact Information

Tel:+81-44-520-5220
Tel +81-29-861-4394
14
Project on Nanostructured Polymeric Materials

Keywords: Polymer, Nano-scaled interface structure control
R&D Term: FY2001᳸FY2007 Budget of FY2005: 630 million yen
Introduction
This research project aims at achieving a higher-order structures of polymers. Ultimately,
“quantum leap” in the attainment of high the objective is to contribute to the establishment
functional performance of organic polymer of new materials and a technology system capable
materials and of environmental compatibility, of supporting a wide range of application fields in
and its purpose is to establish a technological the field of energy conservation.
basis for precise control of the primary and
Organization
Project Leader
Dr.S NAKAHAMA
Japan Chemical Innovation Institute. Polymatech co,. LTD. ULVAC, Inc.
Dr. S. NAKAHAMA
Contents
[1] Packaging Materials [2] Nano-Composite Materials

High performance ultra-thin diebond films for a A novel polyphenylene ether/ poly(ethylene-co-
semiconductor package are being developed to glycidylmethacrylate) (PPE/EGMA) nano alloy
meet demand for packaging materials having
higher reliability for downsizing of electronics
devices.
㪪㫀㫃㫀㪺㫆㫅㩷㪻㫀㪼㩷㪛㫀㪼㪹㫆㫅㪻㩷㪽㫀㫃㫄㩷
㪪㫋㫉㫌㪺㫋㫌㫉㪼㩷㫆㪽㩷㫊㪼㫄㫀㪺㫆㫅㪻㫌㪺㫋㫆㫉㩷㫇㪸㪺㫂㪸㪾㪼㩷
Acrylic rubber/epoxy resin alloy film with a

20nm periodic distance was successfully obtained
by curing with an imidazole compound to fix
spinodal decomposition at the early stage. This
film showed higher tensile strength and lower
was obtained by reactive blending with a long
thermal expansion than conventional film at 1μm,
(L/D=100) twin screw extruder. This nano alloy
which suggests the possibility of its application
has excellent processability and properties such
for packaging material.
as strength, heat resistance and insulation
performance. This material was observed using
the 3D-TEM under development in this project to
visualize its stereoscopic morphology.
15
㪫㪜㪤㩷㫀㫄㪸㪾㪼㩷㫆㪽㩷㪧㪧㪜㩷㫅㪸㫅㫆㩷㩷㪊㪛㪄㪫㪜㪤㩷㫀㫄㪸㪾㪼㩷㫆㪽㩷㪼㫋㪿㫐㫃㪼㫅㪼㪄
㪸㫃㫃㫆㫐㩷㪼㫇㫆㫏㫐㩷㪺㫆㫇㫆㫃㫐㫄㪼㫉㩷㪻㫆㫄㪸㫀㫅㩷㫀㫅
㪧㪧㪜㩷㫅㪸㫅㫆㩷㪸㫃㫃㫆㫐㩷
[3] Halogen-Free Materials

A halogen-free flame retardant material with
high flexibility, high strength and recyclability
was successfully developed by dynamic
vulcanization of an ethylene-propylene-diene
rubber (EPDM)/polyethylene (PE)/Mg(OH)2 [5] Nanostructure Analysis Technology
ternary system as shown below. This material can Scanning viscoelasticity microscopy (SVM) was
be used for insulation or the sheath of power developed to precisely evaluate surface nano
supply cables, replacing PVC. mechanical properties. Quantitative evaluation of
surface elastic properties for glassy polymers was
achieved to estimate surface glass transition
temperature (Tg) at surface, 40é lower than the
Tg of bulk as shown below.
[4] High-Strength Fibers

Melt spinning with laser irradiation was found
to be effective in controling the structure of
polymer chain entanglement, and followed by
drawing and annealing of as-spun fibers, the
strength of PET fibers successfully achieved [6] Shared Technology Platform
1.4GPa. Such high-strength fibers are expected to Review articles concerning research subjects,
be applied for tire cord. including some R&D achievements of this project,
were published as a book entitled
“Nanostructured Polymeric Materials and
Technologies” in order to promote a wide range of
knowledge concerning polymer nanotechnology.
Contact Information
Tel:+81-44-520-5220
Japan Chemical Innovation Institute.
Tel: +81-3-5283-3260
16
Advanced Nanofabrication Process Technology Using Quantum Beams

Keywords: Cluster ionŴNo-damage nano-processing, High-speed and precise nanoprocessing
R&D TermᲴFY2002᳸FY2006 Budget of FY2005Ჴ260million yen
Background
Advanced quantum beam process technology, and precise nanoprocessing technology. In this
which employs gas cluster ion beams and project, nanoprocessing techniques for various
high-brightness synchrotron radiation, has semiconductor, magnetic and compound
considerable potential for material processing materials are being developed with advanced
and analysis in nanotechnology. Especially, the quantum beam technology.
cluster ion beam process, which uses
irradiation of energetic aggregates of atomic or
molecular gas, has opened a new field in
material processing. Cluster ion beam
technology originated in Japan from extensions
of ion beam technology developed over the last
100 years.
In advanced quantum beam process
technology, low-energy irradiation and lateral
sputtering effects are applied towards a
‘no-damage nanofabrication’ process. Also,
enhanced chemical reactions due to dense
energy deposition by cluster ion beam
irradiation are employed to develop high-speed
Organization
Project Leader
Professor I. YAMADA Kyoto university
Osaka Science & Technology Center
Prof. I. YAMADA
Contents
Basic Technologies
It is important to optimize the cluster species,
cluster size or the ion energy of cluster ion
beams for industrial applications of advanced
quantum beams. In the basic technology
development program, high size-controlled
cluster ion beams were formed and reactive
cluster ions having high-energy were irradiated Cluster size control and Harima Science Garden City
irradiation system SPring-8
to obtain fundamental characteristics. To
analyze interactions between cluster ions and
target atoms, large-scale molecular dynamics
simulations and Monte Carlo simulations were
performed.
Also, high-brightness synchrotron radiation
facilities such as SPring-8 were used to study
ion induced damage at the nanometer level.
17
No-damage Nanoprocessing Technology
Magnetic devices are constructed using
ultra-thin films, and technology that realizes
nanometer order processing is required. In
pacticular, surface damage and roughness are
crucial factors that dominate device
characteristics.
In this project, the goal is development of
nanoprocessing technology for magnetic
materials. Therefore, a practical no-damage,
ultra-smooth nanoprocessing method aiming at
both surface roughness and sub-surface
damage depth below 1nm will be developed.
Also, because of the high sensitivity of
materials to radiation damage, development of
large area processing of compound

semiconductor wafers is needed. In this
No-damage Nanoprocessing Technology
research project, 6 inch or large SiC wafers are
being processed with advanced quantum beams,
a task that is difficult to achieve with

Magnetic devices SiC wafers
conventional processing.
High-speed and Precise Nanoprocessing

Technology
High-speed etching of semiconductors is
needed to obtain photonic crystals and large
area thin film devices. In this research project, High-speed and Precise Nanoprocessing Technology
reactive and high-energy cluster ions are
employed for the surface processing of poly-
crystalline Si with surface roughness below
2nm for high-speed thin film display devices.
In addition, high-speed etching of Si for
photonic applications is being developed. This
technology will have an etching rate higher
than 10m/min for patterns below 100nm Photonic Crystal Next-generation FPD
dimension and an aspect ratio between 1 to 20.
Contact Information
Machinery System Technology Development Department
Tel: +81-44-520-5241
Osaka Science & Technology Center
Tel: +81-6-6443-5322
http://www.ostec.or.jp/
18
Full Color Rewritable Paper Using Functional Capsules Project
Keyword: Electrophoresis, Capsule, Rewritable paper

Background
The goal of this project is to develop new information media such as newspapers,
display material for an electrophoretic display magazines, books, posters etc. can be used
that enables control of electrically charged colored repeatedly. It will also be possible to access
nanoparticles dispersed in solvent. The paper-like information without feeling uncomfortable as a
reflective design is the remarkable characteristic paper culture has existed for over 5000 years.
of this display compared to emissive displays such By applying the results of this project,
as cathode-ray tube,EL and plasma displays. protection of finite forest resources can be
Not to use a light source becomes energy saving. proposed and new markets for content can be
If substitution of paper becomes possible, developed in the future.
Organization
Project Leader
Professor T. KITAMURA. Chiba University
Prof. T. KITAMURA
Contents
Basic technology for full color rewritable
paper roughly consists of the following.
[1] Encapsulation Technology

Capsule technology derived from non-carbon
paper has many applications, such as wrapping
technology for food, medical supplies, chemicals,
liquids, powders and gases. Based on such
materials, encapsulation types, capsule materials
and capsule structure have been examined. emulsifying method, etc. have been examined,
In this project, with the purpose of making a and a capsule of 10-60 micrometer average
capsule that includes dispersion liquid, various particle diameter with 10% or less of CV values
techniques related to phase separation, was successfully manufactured. Furthermore, by
interfacial polymerization, coacervation, means of capsule design, wall thickness control
solvent-extraction, phase inversion and and formulation technology development, a
interfacial radical polymerization have been practical capsule design was attained.
examined. Moreover, in order to obtain a
monodispersed capsule, the IJ method, SPG film
19
[2] Nano Functional Particle Surface Physical [3] Development of Picture Display Material and
Property Control Technology Functional Evaluation Technology Using a
Technology to disperse and electrically charge Capsule
nano-sized colored particles in organic solvent has To use a capsule that includes nanofunctional
been developed. particles as the display material, an electrode for
To create coloring particles, various techniques control and arrangement of capsules is necessary.
such as solvent evaporation, dispersion Moreover, to make a flexible display device model,
polymerization, emulsification polymerization the electrode and transistor for control must be
and suspension polymerization are being flexible, and organic semiconductor material is a
examined. promising possibility.
Key points to achieve This technology are As preparation for realizing flexible rewritable
controlling morphology, diameter and distribution, paper Investigation of wet process
electric charge ( potential), dispersion stability, electrodepattering technology and organic
material design and formulation of material. semiconductor forming is being carried out.
Technology for two-dimensional arrangement is
being investigated using a method to transfer,
print and electrodeposit materials in order to
achieve color display.
㪮㪼㫋㩷㫇㫉㫆㪺㪼㫊㫊㩷㪼㫃㪼㪺㫋㫉㫆㪻㪼㩷

Particle Model and Created Particles
㫇㪸㫋㫋㪼㫉㫅㫀㫅㪾㩷㩷
Transparent
䋱㱘䌭
Colored
㪤㫆㫅㫆㪻㫀㫊㫇㪼㫉㫊㪼㪻㩷㪧㪸㫉㫋㫀㪺㫃㪼㫊㩷㪬㫊㫀㫅㪾㩷㪤㪸㪺㫉㫆㫄㫆㫅㫆㫄㪼㫉㫊㩷
Furthermore, to control the interaction of 㪰㪤㪚㩷㪺㫆㫃㫆㫉㫀㫅㪾㩷㫌㫊㫀㫅㪾㩷㪜㪚㩷㫄㪸㫋㪼㫉㫀㪸㫃㫊
nanoparticles and capsule walls, analysis of Moreover, for color expression, examinations of
particles and polymer film is being conducted. electrochromic material as well as the
111
Surface electrophoresis method are being conducted.

treatment
0.8
0.8
weakens Recently, a reflective type display has gradually
adhesion been proven to be practical, and an
0.6 force Retrace Colloid
[-]
0.6
[-]
probe electrophoretic display is one of the most

0.4 key Additive conc. [mg/m22 ]
⚥ⓍಽᏓ
⚥ⓍಽᏓ
0.4
ke additi e
Without [ ----
/ ] paper-like methods. Research to establish basic
ith t
Dispersant 18.9
0.2
0.2 Dispersant 0.500 technology, especially for whiteness of
coCoupling
pling agent 0.379
agent
background, high resolution to satisfy the
00
-3
-3
-3
00 20
20 40
40
40 60
60
60 80
80
80 100x10
100x10
100x10
complicated character expression of Japanese and
ઃ⌕ജ [nN/nm]
ઃ⌕ജ [nN/nm]
Change of Adhesion Force between Particle and Film generating color, etc. is being conducted in this
area.
Contact Information
Tel:+81-44-520-5220
Tel +81-3-5283-3260
20
Nanostructure Forming for Ceramics Integration Project

Keywords: Ceramics, Nano crystal, Iinformation and telecommunications
R&D Term:FY2002㨪FY2006 Budget of FY2005:250 million yen
Background
This project, pursuing the unique aerosol to significantly improve the function of finished
deposition method (AD method) originally components. The purpose of this project is
developed in Japan as a core technology, has aims through the exercise of attained achievements, ro
at a significant reduction in the process enable Japan’s ceramics industry to create
temperature, miniaturization and high advanced products that will lead the world
densification of materials. From the viewpoint of markets in the fields of information,
manufacturing technology, combining metals, communication, energy and environment
glasses and plastics at the nanoscale permits technologies, resulting in enhanced international
integration at the component level. An innovative competitiveness as well as contributing to society
low temperature integration technology for through new market developments.
advanced ceramic materials has been developed
Organization
Project Leader
Dr.J AKEDO. National Institute of Advanced Industrial Science and Technology
Manufacturing Science and Technology Center
Brother Industries, Ltd. TOTO LTD. FUJITSU Limited. NEC Corporation
Sony Corporation. NEC TOKIN Corporation
Dr. J. AKEDO
Contents
[1] Process Research and Development
Wide area 㱍-Al2O3 layer deposited on metal
ɔ Compaction of nano-sized ceramics at room substrate at room temperature using “room-
Ᏹ᷷ⴣ᠄࿕ൻ⃻⽎䭡೑↪䬦䬮㊄ዻၮ᧼਄䭇䬽䮑䮕⚿᥏⚵❱structure
ᄢ㕙Ⓧ䕙䯹䰍䰸䎕䰛䎖⤑䬽ቶ᷷ᒻᚑ
temperature-shock-compaction-phenomenon” Nanocrystal
temperature ɔ
The AD method is a film deposition technology
where the impact of solid state particles can
㪋㪇㫅㫄
create a strongly adherent, high-density nano
crystalline ceramic film by gas blasting nano
sized ceramic particles onto a surface. The
deposition rate is 30 times faster than that
obtained with conventional thin film technology
and the ceramic thin film can be deposited at
room temperature. Initially, a new ceramics film in as much as wide ranging applications are
creation mechanism “rroom-temperature-shock- anticipated, such as the use of moderately priced
compaction-phenomenon” was investigated. It raw material particles, currently used for ceramic
was discovered that the material particles were processing, to form nano structured ceramic films,
fractured and deformed into nano crystallite-sized although the conventional sintering process of
particles of 10 to 30 nm and formed dense nano over 1000 oC is not required while achieving the
crystal structures on impact with the substrate, hardness and density equal to ceramics sintered
with the activation of the newly formed surfaces in bulk at high temperatures.
on collision of particles dominating the
inter-particle bonding. ɔ Upgrading process technology ɔ
Based on the above deposition model, the
optimum deposition condition was calibrated, and Whereas ceramic films possessing the
hardness and density equal to sintered ceramics
ǂ-Al2O3 nano particles were successfully can be deposited at room temperature using the
compacted at room temperature a world first,
achieving electromechanical properties equal to AD method, the electrical properties, including
ferroelectric and ferromagnetic, essential to their
those of sintered ceramics. Furthermore, the application to electronic devices, are inadequate
dielectric breakdown strength of this ceramic
thick film was a single digit greater (150 – 300 due to their sensitivity to the nano structure of
the films. Improvement in the properties of the
kV/mm) than in sintered ceramics. It was also primary particles has been achieved with the
confirmed that the plasma corrosion resistance
and uniformity were superior to sintered ceramics assistance of different energy sources, including
laser, plasma and high-energy beams as well as
due to the absence of pores. Uniform deposition modifications to the primary particles
was achieved over a 200 mm square area. This
process represents a technological breakthrough, themselves.
[2] Application Development of Devices
21
been fabricated by depositing BaTiO3 ferroelectric
ɔ Piezoelectric devices ɔ materials onto a Cu substrate using the AD
Using piezoelectric materials, applications to method. A capacitance of more than 3 nF/mm2
microdevices such as MEMS optical scanners, ink was achieved, far greater than the competitive
jet heads and microgyroscopes have all been technology of ceramics/polymer composite, films.
discussed. In this project, an optical micro This technology has yielded the worlds highest
scanner having high-speed performance with a performance for a capacitor fabricated at process
resonance frequency of over 30 kHz in temperatures of less than 300 oC. Additionally,
atmospheric ambient was successfully fabricated electro magnetic interference (EMI) wave
by depositing piezoelectric materials at a high absorbers and millimeter-wave imaging sensors
rate onto the scanner structure, fabricated by are currently under development.
Si-micromachining via the AD method. This type
of high-speed scanning optical scanner is as Antenna
䉝䊮䊁䊅
LLSI⚛ሶ
S I
anticipated to be a key component for use in Capacitor

䉨䊞䊌䉲䉺
various types of sensors or next-generation Filter
䊐䉞䊦䉺
display devices.
䉣䉝䊨䉹䊦
Piezo-driven M O SLM 䊂䊘䉳䉲䊢䊮⤑
䎤䎧ᴺ䭡↪䬓䬮࿶㔚㚟േ䎰䎲䎶䎯䎰
form ed by AD m ethod
ADᴺ䉕೑↪䈚䈢࿶㔚㚟േဳMOSLM
High speed piezoelectoric
࿶㔚㚟േ䎰䎨䎰䎶శ䮀䭴䮪䮑䯃
optical
Package micro
of optical micro scannerscanner Endiveted capacitor formed on
䊒䊥䊮䊃ၮ᧼䋨㪝㪩㪋䋩਄䈮㪘㪛ᴺ
㪝㪩㪋਄䈮ᒻᚑ䈚䈢䉨䊞䊌䉲䉺
㪫㪼㪺㪿㫅㫀㪺㪸㫃㩷㫇㫆㫀㫅㫋㩷㪑
ᛛⴚ䈱䊘䉟䊮䊃䋺 circuit 䈪ᒻᚑ䈚䈢䉨䊞䊌䉲䉺
board (FR4) by AD method
㪟㫀㪾㪿㩷㫊㫇㪼㪼㪻㩷
ᓥ᧪䉋䉍ෘ䈇䌓䌩
㫊㪺㪸㫅㫅㫀㫅㪾㩷㫉㪼㪸㫃㫀㫑㪼㪻㩷
᭴ㅧ䋬䌐䌚䌔⤑䈪 ɔ Optical devices ɔ
㪹㫐㩷㫋㪿㫀㪺㫂㩷㪪㫀
㜞೰ᕈ䊶㜞ㅦᔕ 㪸㫅㪻㩷 With the anticipated requirement of
╵䉕ታ⃻
㪧㪱㪫㩷㫊㫋㫉㫌㪺㫋㫌㫉㪼
㔚࿶ශട೨ 㔚࿶ශടᓟ ultra-high speed integrated optical circuits to
Upper electrode Initial Applied voltage
cope with the need for high-capacity information
Reflection mirror v-MOSLM䈱ᢿ㕙࿑
Magnet-optical layer
⏛᳇శቇጀ
processes, the development of an ultra-high speed
optical modulator has been studied. Using the AD
࿶㔚⤑
H
method, PLZT electrooptic materials have been
PZT cantilever SGGGၮ᧼
successfully deposited onto a glass substrate at a
Heff
P Z T la y e r
process temperature 100oC lower than
Cross section of v-MOSLM
ೋᦼ⁁ᘒ 㔚࿶ශട conventional processing temperature. A
transparent film with an electrooptical constant
(rc) of 102 pm/V was successfully obtained, being
Furthermore, processing has continued, twice the generally accepted value and five or six
aiming at realization of 3D-projector and times larger than that of single crystal LiNBO3,
holographic memories, the development of fast again denoting the world’s highest performance. A
response spatial light modulators, in place of Fabry-Perot type of optical modulator using this
liquid crystal. Capitalizing on the advantages of film is also being produced.
the AD method, such as a lower process
temperature and a high deposition rate, E O -th in film w ith
PZT-MOSLM ާPZT-Magneto-Optic Spatial Light EO-modulator
਎⇇ᦨ㜞ᕈ⢻䈱䌅䌏⭯⤑
p e rfo rm a n c e in th e w o rld
਎⇇ᦨ㜞ᕈ⢻䈱䌅䌏⭯⤑
䌅䌏ᄌ⺞⚛ሶ
Modulators) have also been prototyped, 2<6ኒ#&ᐏ
of Refractive Index
PZT(60/40)
PZT AD layer
䎳䎽䎷♽ r (pm/V)
of Refractive Index
PZT(60/40) r (pm/V)
㪇㪅㪇㪇㪊 c c
integrating the smart structure, incorporating a 㪇㪅㪇㪇㪊
102102
piezoelectric thick film with magneto-optic 㪇㪅㪇㪇㪉
㪇㪅㪇㪇㪉
EOEO Effect
Effect
㬍6㬍6
materials. Successful pixel switching at 20 MHz
㱐䂦䌮
㱐䂦䌮
㪇㪅㪇㪇㪈
has already been achieved with an 8V drive 㪇㪅㪇㪇㪈
Relative Change
Relative Change
voltage. ㅘ᣿䎳䎽䎷⤑
Transparent PZT layer
㪇
㪇
17 17
㪄㪈㪇㪇㪈㪇㪉㪇㪊㪇
㪄㪈㪇㪇㪈㪇㪉㪇㪊㪇
㪄㪇㪅㪇㪇㪈
ɔ High frequency devices ɔ 㪄㪇㪅㪇㪇㪈
㪜䇭㩿㫂㪭㪆㪺㫄㪀
Electric Field
LiNbO3
With increasing CPU speed and higher 㪜䇭㩿㫂㪭㪆㪺㫄㪀
Electric Field
LiNbO3
(conventional)
communication frequencies, surface mounting (conventional)
technology has reached its limit in the

development of the high-frequency devices in the In the future, it is planned to develop a
GHz band. high-speed optical modulator with a low driving
In order to address this problem, highly voltage using a ceramic film and to use it in a
accurate fine-scale integration of the dielectric, wide variety of areas such as realization of
magnetic and metallic materials is required and miniaturization of network equipment and
further miniaturization and high-performance high-speed computer data transfer.
devices having reduced weight are needed. In this
research, an embedded capacitor structure has
Contact Information
Machinery System Technology Development Department
Tel: +81-44-520-5241
Tel: +81-29-861-9417
22
R&D of 3D NanoScale Certified Reference Materials

Project
Keywords: Nanoscale, Reference materials R&D Term:FY2002᳸FY2006 Budget of FY2005: 310 million yen
Background
Nanotechnology, one of the most promising tool in quantitativity is not sufficient. The lack of
this century for various fields of industry, is based accuracy is a najor impediment to R&D of
on controlling nanometer-scale fine structures nanotechnology. To solve this problem, this
and their arrangement. Recent progress in project has focused on the development of
observation techniques has made it possible to see Nanoscale rulers that will serve as the world's
structures relatively easily, however their smallest national measurement standard.
Organization
Project Leader
Dr.I KOJIMA.
Dr. I. KOJIMA
Contents
Since nanostructures can have three-dimensional Since a nanoscale has a very fine pitch,
shapes, nanoscales for lateral direction and depth structural evaluation should be performed using
direction are being developed. a method having atomic level resolution. The
most probable candidate is application of the
=?.CVGTCN0CPQUECNG atomic force microscope (AFM).
In this research, several 1D-grating-shaped In order to establish traceability of the
nanoscales are under development. The pitches nanoscale’s pitch size to the national length
of nanoscales will be determined within the standard, special AFM and traceable-AFM is now
range of 25 – 100 nm. Since the quality of the under development.
nanoscales should be as high as possible, the The figure below is a schematic representation of
best fabrication technique will be selected. At the traceable-AFM, which is atomic force
present, an electron beam lithography technique microscope equipped with laser interferometers
and an application of a super lattice cross section, for X,Y, Z axes. The resolution of the laser
both of which are already established in the interferometers is 40 pm, which is the size of
semiconductor industry, are applied to fabricate one-fifth of an atom. In order to achieve certainty
nanoscales.
U ltra -h ig h re so lu tio n
la se r in te rfe rom e te r
P re cision B e a t㩷 sig na l
X YZ W ide ba n d
s ca n nin g 䌚 AFM head L e n g th 㩷 s ta n da rd
s ta ge
Io d ine sta bilize d
H e -N e lase r
䌘 O ff-s e t
lock
M e tro lo g ic al fram e w ith H ig h ly s ta b ilize d la se rs
lo w e xpa n s ion m a te ria l
Tra ce a ble A F M
23
of 0.1 nm, a higher precision X,Y, Z stage having depth is focused on GaAs/AlAs and SiO2/Si
angular movement along with laser axes smaller systems. In the case of the GaAs/AlAs system, a
than 10 nanoradian are being developed. sharp interface can be achieved by the epitaxial
Traceability to the national length standard will growth process. On the other hand, the existence
be maintained by using an iodine stabilized of a structural transition layer at the interface of
He-Ne offset locked laser. thermally oxidized SiO2/Si is well known.
A high quality lateral nanoscale with a pitch of In order to fabricate SiO2/Si with a sharp
25 nm calibrated by traceable-AFM will be interface, an original technique using an
available in 2009. ultra-high concentration ozone has been
employed.
=? Nanoscale Depth A thickness calibration method, including an
Regarding nanoscale depth, thin film reference evaluation of film and surface/interface quality, is
materials are under development. According to also under development. Certified thickness of
the IRTS roadmap, the depth of the source to the the nanoscale will be calibrated by using
drain extension (SDE depth) of the MOS traceable-XRR (X-ray reflectometer: see below).
transistor will shrink to the 10 nm level by 2010. In order to maintain traceability, an ultra-high
Therefore, the thickness of nanoscales is targeted precision goniometer for traceable XRR will be
at 3 – 10 nm. Since the nanoscale depth will be calibrated using the national angle standard.
used to calibrate elemental depth profiling data, a The x-ray reflectivity profile will be analyzed with
nanoscale should have the following features: a sample shape to reduce uncertainty. A high
higher uniformity of density and stoichiometry quality nanoscale will be available in 2009
in depth and lateral direction, and a sharp
interface of the layers.
Because sputtering rate varies with the
material, the same material standard is
necessary for accurate calibration. Based on the
market size and needs, development of nanoscale
High power X-ray

source
Wide range X-ray

detector
Higher precision goniometer
calibrated by angle standard
X-ray Shield X-ray and noise shield
Traceable-XRR

Contact Information
Tel:+81-44-520-5220
Tel +81-29-861-4880
24
Advanced Diamond Device Project

Keywords: Diamond, Electron emitter, Semiconductor devices
R&D Term:FY2003㨪FY2005 Budget of FY 2005:660 million yen
Background
This project focuses on electron emission devices techniques will be established at an early stage.
such as a diamond discharge lamp cathode, a Development of electron emission devices has also
diamond electron emitter and high frequency been undertaken to solve technical problems
diamond transistors since these devices are concerning practical use. The success of the ADD
expected to achieve practical uses soon using project is ensured by collaboration of top-level
negative electron affinity inhering in only laboratories, universities and companies, and new
diamonds. Fundamental technologies, doping diamond products are expected to develop into a
techniques and surface and interface control large commercial market.
Organization
Project Leader
Dr.N FUJIMORI
Japan Fine Ceramics research Association
TOSHIBA Corporation. Sumitomo Electric Industries, Ltd. KOBE STEEL, LTD.
Dr. N. FUJIMORI
Contents
Surface termination techniques such as a remote
[1] Control of Diamond Electrical Properties
plasma technique with less surface damages will
a) Development of doping technology be developed. Surface characterization techniques
For development of diamond electronic devices, to obtain information about the relationship
it is necessary to improve transport properties between electron affinity and surface
operating at room temperature. For this, efficiency nanostructure will be used for development of
and activation efficiency are key issues by means surface termination techniques for electron
of introduction of doping atoms providing free emission devices. To control interface states with
electrons and holes into a high-quality diamond metal or insulators, ion implantation techniques
network with a fewer number of defects and will also be developed.
undesirable impurities. In this project, based on
the above concept, the following research is being
Microwave Plasma CVD System
conducted: 1) Growth of high-quality diamond; 2)
Doping techniques of gas phase and ion
implantation with undesirable impurities; and 3)
Improvement of characterization techniques of
diamond crystalline structure and electrical
properties.
b) Surface & interface control for diamond

electronic devices
Another important issue concerning diamond
electronic device application is control of the
surface and interface with metal and insulators.
Fig. View of System
25
[2] Diamond Discharge Lamp Cathode developed. A cathode has been separated by 36
A highly efficient and ecological diamond electrodes using this technique. By making a
discharge cathode for cold cathode fluorescent smaller device and controlling the current at
lamp (CCFL) is under development. Recently, the separate electrodes, a large current density of
amount of CCFL production has abruptly 12mA/mm2 has been obtained.
increased for backlighting of LCD-TVs. To In addition, n-type semiconductor emitters have
improve CCFL light emitting efficiency, cathode been fabricated by phosphorous doping. These
voltage drop Vc should be reduced. For this emitters exhibit a very low threshold voltage. A
purpose, development of a diamond cold cathode very high performance emitter source will be
has been started. Up to now, one or two orders of established by optimizing a combination of
Experimental 㱏
Experimental 㱏 nanofabrication, separate electrodes and n-type
value
value of
of 1-2
1-2 decade
decade
C. B. higher
higher than
than that
conventional
conventional
that of
of doping.
Vac. cathode
cathode metal.
Poly
metal.
Electron affinity㻡䋰 level
䷿䷣
㸢 higher㱏
[4] High-Frequency Diamond Transistors
diamo
Electron
丣両丱丈
Substrate
One of the advantages of diamond electronic

ndጀfilm
V. B. Ar + ion
Diamond
Discharge
gas
devices is that they have such a high thermal
Energy diagram of diamo nd/discharge gas Discharge gas conductivity (20 W/cm.K) and a high band gap
(5.47 eV), so only a simple cooling system would be
large secondary electron emission efficiency (J)
sufficient for diamond devices. Diamond also has a
values were confirmed from poly diamond film.
high breakdown field (1u 107 V/cm) and a low
Based on these results, development for actual
dielectric constant (5.7), which are ideal for high
reduce of Vc is now in progress.
power-high frequency transistors. However, p-type
diamond has a deep acceptor level (0.37 eV) and
[3] Diamond Electron Emitters hence it is not possible to achieve a high current
Using a new nanofabrication technique, nanoscale density. In this project, we were able to solve this
emitters have been fabricated at a uniformity of issue by using two new device structures for high
less than 8% and a high density of 25 tips/Pm2. It frequency transistors: (1) a p-i-p structure using
is expected that this will dramatically increase hole injection into the channel layer, and (2) a new
device structure using the surface conducting
emission current density and total emission
layer due to hydrogen termination. Since diamond
current. has far better electronic properties than other
e
semiconductors, its characteristics will be fully
Gatee e
utilized toward the fabrication of high-frequency
Insulator
diamond transistors with GHz-range operation
frequencies. Furthermore, high-quality
Emitter device
heteroepitaxial diamond films have also been
500nm 㪈㪇㪄㪉
developed to reduce production cost of transistors
㪻㫀㫊㫋㪸㫅㪺㪼䋺㪈㪇㪇㱘㫄㩷
High density and uniform
㪈㪇㪄㪊
and diamond transistors have been fabricated on
㪝㪜㩷㪚㫌㫉㫉㪼㫅㫋㩿㪘㪀
nano-fabrication
㪧㪄㪻㫆㫇㪼㪻
㪈㪇㪄㪋 such films to demonstrate their high performance.
㪼㫄㫀㫋㫋㪼㫉
㪈㪇㪄㪌 Vth= Vth=
550V 1500V 㪙㪄㪻㫆㫇㪼㪻
㪈㪇㪄㪍
㪼㫄㫀㫋㫋㪼㫉
㪈㪇㪄㪎
㪇㪇㪅㪌㪈㪅㪇㪈㪅㪌㪉㪅㪇㪉㪅㪌㪊㪅㪇
㪘㫇㫇㫃㫀㪼㪻㩷㪭㫆㫃㫋㪸㪾㪼䋨㪭㪀
Emitter device with
separate gate-electrode FE properties from P-doped emitter
p-i-p Structure of Diamond Transistor
In an attempt at a separate electrode, a lift-off
technique for cathode-stacking electrodes has been
Contact Information
Tel:+81-44-520-5220
Tel +81-3-3519-5715
26
Carbon Nanotube FED Project
Keywords: Carbon nanotube, Field emission displays R&DTerm:FY2003᳸FY2005 Budget of FY2005:800million yen
Background
This project is developing a high image quality develop glass-bulb technologies for vacuum
and low power consumption field emission display sealing, and display technologies for driving the
(FED) by applying carbon nanotubes (CNT) to panel by circuit electronics and for evaluating
the electron source. A uniform electron source picture quality by measurement. By achieving
with flat-film CNT and fine structure triodes for these technologies, an FED compatible with
suppressing the deviation of emission is required. conventional cathode ray tubes (CRT) will be
For realizing an FED panel, it is also necessary to realized.
Implementation
Project Leader
Dr.S OKUDA. Mitsubishi Electric Corporation

Dr. S. OKUDA
Contents
[1]of FED Features
The FED is the most promising flat panel
Small Investment: Since a FED does not
display device because it has the following require expensive manufacturing facilities,
features: the amount of investment would be small
(1) Image Quality: Since the display prince compared with other devices.
ple is the same with CRTs, FEDs have just
the same picture quality as CRTs. FEDs c
an present true-color and high- contrast nat

ural images over a wide dynamic range as Phosphor
well as quickly moving pictures without blur
at a wide viewing-angle. A conceptual figu Electrons
re of high image-quality is shown below:

CNTs

Cross Section and Principle of FED Panel

[2] Carbon Nanotube Electron Source
Carbon nanotubes are the most promising ma
Concept of High Image Quality FED terial for realizing a large area electron source
for a FED because CNT is a natural sharp p
in enabling electron emission with a low electr
ic field. It is physically and chemically stable

Low Power: Since a FED has high lum enough for limiting the damage from the env
inance efficiency (7 lumens per watt), it can ironments. Good quality CNT can be supplied
operate at half the power consumption of o at reasonable cost due to previous preceding
ther display devices. Japanese national projects on advanced carbon
materials.
27
[3] Issues and Solutions An activation technology for CNT surface
The issues of this project are (1) development of treatment is another key issue in developing a
a uniform electron source, and (2) development of CNT electron source. This project includes
panel technologies and evaluating the display research on the laser irradiation method. The
quality technologies. f ollowing figure illustrates the effect of
activating a CNT surface by laser:
Development of a Uniform Electron Source

The most important problem for developing a
CNT-FED is the deviation of pixel luminance

caused by deviation of emission properties among
cathodes. In order to solve this problem, this
project is concentrating on the development of flat Without Irradiation With Irradiation
CNT films, fine structure triodes, and activation

technologies by surface treatment. An example of
fabrication of fine triodes using a silicone-ladder Effect of Activating CNT Surface by Laser
polymer is shown in the following figure:

Development of Panel Technologies and
Gate Evaluating the Display Quality Technolo

gies
The other issue for developing the FED is
Insulator panel technologies for vacuum bulbs. This
project is focusing on the development of a low
cost glass bulb without spacers and low
CNT Glass temperature sealing techniques.
A novel glass structure for the bulb has been
Fine
Triodes Using Silicone-Ladder Insulator investigated for coping with atmospheric pressure
loaded on the front and rear glass panels
when they are evacuated without a spacers.
For developing a uniform electron source by A new sealing process below 400 degrees for
suppressing deviations, increasing the number of avoiding the thermal stress caused by the
emission sites is an effective solution. A fine conventional 450 degrees sealing process is also
structure triode is essential for increasing the being studied.
number of emission sites.
Contact Information

Tel:+81-44-520-5220
Fine Ceramics Research Association
Tel: +81-3-3519-5715
28
Highly Functional Nanotechnology Glass Project for

Photonic Devices
Key words: DVD, AWG, Grating Project Term: from FY2003 to FY2005 Budget of FY2005:220 million yen
Background
Technologies which are competitive and will polarization-dependent loss. As a result, energy
lead the industry have been selected for the savings can be expected for devices used for
Nanotechnology Glass Project for Electron data storage, optical communication, optical
Devices, from the basic technologies developed in measurement and analytical instruments. In
the Nanotechnology Glass Project up to Fy2002. addition, high performance glass products are
This project is being executed as part of the expected from a pan’s glass industry by applying
nanotechnology Program of ETI. In this project, the results of the Nanotechnology Glass Projec t
the following three devices are being researched R&D in the following three areas: data storage,
and developed : Ĭ a device for optical optical measurement and analytical instruments.
recording (DVD) what can greatly improve The final goal of the Nanotechnology Glass
the recording density and transfer rate; ĭ an Project for Electron Devices is to make the
optical multi-waveguide device that is greatly Japanese glass industry more competitive and
miniaturized and is highly integrated compared to create a new markets to benefit humankind
to current products; and Į a device for in the future.
diffraction grating with high efficiency and low
Organization
Project Leader
Associate Professor A.MURAKAMI. Tohoku university
Hitachi, Ltd. Hitachi Cable, Ltd.
Nippon Sheet Glass Co., Ltd. New Glass Forum
Associate Prof. A. MURAKAMI
Contents
In this project, the three technologies
invented during the Nanotechnology Glass
Project up to Fy2002 are being developed.
The goal is to commercialize products by Fy2007.
Recording
Ĭ Development of Nanotechnology Glass Thin
Bluish-violet laser Super resolution f ilm
Films with a Super Resolution Effect for a High Mark
(Nanoglass thin film)
Density DVD (O=405nm)
Higher recording density in optical recording Recording layer

media has continuously been required due to Protection layer
a rapid increase in digital information. A new Substrate Reflection layer
type of DVD with ultra-high recording density Cross sectional view of Developed Optical Disk
as well as high reliability and low electrical
power consumption is being developed using Amorphous Grain Boundary
nanotechnology glass thin films with a super Transmission Eelectron
(width䋼1nm)
resolution effect (shown above right).
Micrograph of New Nnoglass
Thin Film (Co3O4).
Dispersed Grain
10nm
thickness䋺70nm
29
ĭ Development of Nanotchnology Glass for an Į Development of Nanotechnology Glass for a
Optical Waveguide Device Large Wavelength Dispersion Device
Optical networks in metropolitan areas and Requirements for spectroscopy are increasing
access areas will become very important in the regarding wavelength-divided multiplexing
near future. Optical waveguide devices with communication and spectrum analyzers, and in
a wide wavelength range, high functionality, low the bio- and medical industries. For such
loss and low cost are greatly needed for net applications, mechanical grating is one of the
works. For this rason, glass film deposition most promising devices. Therefore, deep-grooved
technology and optical circuit fabrication diffraction gratings that disperse light with
technology to meet this need are being small wavelength differences for large separation
developed. Cyclic-AWG (arrayed waveguide angles have been developed. Deep -grooved
grating) with low loss and low polarization diffraction grating is a key to realize very
dependent loss that can be used in the compact wavelength demultiplexer devices with
wavelength range of 1.3mm band is expected high efficiency, low PDL, a wide wavelength
range and high reliability. In addition, as
to be realized (shown below).
fundamental technology to improve
demultiplexer performance, nanotechnology
glass evaporation, fabrication and evaluation
Long Haul
technologies are being investigatedᲢshown belowᲣ.
1.5Pm

Incident light
Metro Grating

Central Office 1㱘m
1.5Pm 3㱘m

+
Node
0.
Access
0.1~1mm Microlens
5~
㱗8 1.3Pm array
㱗1 5m
㩷㱗2 㱗3

Phase
+
control layer
Diffractive light
Cyclic-AWG !!!
Arrayed
waveguide Output slab
Input slab
waveguide waveguide

Input Signal
㧔1.260Pm
㨪1.360Pm㧕

Input waveguide Output waveguide
(32ch) (32ch)

Contact Information
Tel:+81-44-520-5220
New Glass Forum
TEL:+81-3-3595-2775
http://www7.big.or.jp/~cgi19786/ngf/indexe.html
30
High-Strength Nanotechnology Glass Project for Displays

Keywords: Strengthening, Microstructure, Display R&D Term: FY2003᳸FY2005
Budget of FY2005:210 million yen
Background
A flat display panel has received attention as a without decreasing their strength. A new glass
wall-hung television for home use and panel size strengthening technique with low energy
has gradually become larger. According to the consumption therefore needs to be developed.
technology road map tabletop TVs and wall-hung
TVs, an 80-inch plasma display panel (PDP) will
be commercialized by 2007. The weight of an
80-inch PDP will be about 60 kg. The weight of
glass substrates is about 50 kg, which accounts
for most of the total weight of the PDP. Therefore,
it will be difficult to use a large and heavy PDP as
a wall-hung TV or portable TV in a typical house.
In order to reduce the weight of a large size PDP,
it is important to make glass substrates thin
Organization
Project Leader
Dr.K TSUTSUMI Central Glass CO., LTD ᫊ϙჇ
2.Ჴ‫ ء‬ঙ‫ٽ‬
Central Glass CO., LTD
ᢹ
Dr.K TSUTSUMI
Contents
In order to reduce the weight of glass – Optimization of heterogeneous phase –
substrates in various displays, a new practical A region with different physical properties from
technique that can strengthen glass substrates at its surroundings is considered to be in a
room temperature was developed using a “heterogeneous phase”. The heterogeneous phase
femtosecond pulse laser to form a heterogeneous works as an effective point to stop crack evolution
phase into glass. or to change the direction of crack propagation
and contribute to glass strengthening.
Femtosecond pulse laser In order to improve bending strength,
irradiation conditions were optimized with a
femtosecond laser to form a heterogeneous phase.
Glass surface Force

Crack
Heterogeneous phase
An edge-processing technique was also

developed to improve the edge strength of glass
substrates. If the practical strength of glass Image of fracture
substrates increases 4 times as untreated ones, Especially, the femtosecond laser has an
the thickness of substrates will be half of current advantage to form the heterogeneous phase
glass substrates. without damage to glass because of a very short
pulse that can ignore an influence of heat
diffusion. High-strain point glass, which is used
31
as a substrate in PDP, was irradiated to form the – Processing technique for large substrates –
heterogeneous phase with a femtosecond laser. To improve the strength of practical large glass
The average bending strength of irradiated glass substrates for PDPS (e.g. 32 inch size), techniques
increased 2.2 times over non-irradiated glass. The to form heterogeneous phase and to carry out
irradiation conditions will be further optimized, edge treatment with the realized processing
and efforts to increase the bending strength of method should be established. For formation of
irradiated glass to 4 times as non-irradiated glass the heterogeneous phase, effective methods are
will be made. (1) wide irradiation by interference, (2) multipoint
irradiation by splitting a laser beam and (3) high
repetition irradiation. The possibility of each
method was examined and an appropriate
practical technique will be developed. For edge
treatment, the effectiveness of the
above-mentioned three methods will be examined
for practical application.
Heterogeneous phase of different

irradiation conditions (Top view) Heterogeneous phase
–OOptimization of edge-processing conditions –
Glass substrate can break due to mechanical Large size
damage or thermal shock during the panel
manufacturing process, and break points of glass substrate
substrates frequently exist at glass edges. In
order to improve the practical strength of
substrates, an appropriate edge processing
technique is important. Effective methods to
improve the edge strength of substrates include
(1) grinding and polishing, (2) laser processing to
give edges a fire-polished shape and (3) forming of
the heterogeneous phase near edges. The Edge treatment
practical effectiveness of each technique was
examined and edge processing conditions were
optimized to improve the practical strength of
glass substrates.

Processing of large glass substrates

Contact Information

Tel:+81-44-520-5220
Central Glass Co., Ltd.
Tel +81-598-53-3170
http://www.cgco.co.jp/english/index.html
32
Innovative Materials Development Program
Advanced Evaluation Methods Research Project for

Nanoscale Semiconductors
Keywords: Semiconductor, Evaluation, TEG Implementation Term: FY2003 - FY2005ų

Budget for FY 2005: 1.8 billion yen
Background
Japan’s semiconductor materials manufacturers Semiconductor device electrical characteristics
play a major role in the world market, and they but also to establish the level of device reliability.
will try to continue offering high quality and Such tools can also be used to evaluate the
advanced semiconductor materials. However, mutual influence between materials as well as
they now face difficulties in overcoming materials and processes.
methodology limitations to research on individual The semiconductor materials industry must
materials to improve the performance of a propose highly reliable components (in terms of
comprehensive group of materials due to rapid both materials and processes) that are suitable
progress in the creation of nanometer-scale for multi-layer circuits for next-generation
devices and the emergence of complex process. semiconductors in order for materials suppliers to
Development of “integrated component dramatically the sufficiency ( reduction in the
development aid tools” is becoming indispensable amount of time to market) of developing a
not only for the comprehensive evaluation of number of next-generation semiconductor
materials.
Organization
Participating Organization䇭
‫ޓ‬Consortium for Advanced Semiconductor Materials and Related Technologies
䃂Position of CASMAT䇭(A Mutually Complementary Relationship with Other Consortiums)
33
䇭Contents
CASMAT is currently working toward the
implementation of material evaluation systems
through an integrated backend process by
introducing adovanced process equipment and
evaluation equipment designed for a 300 mm
wafer process and a 65 nm nord in its dedicated
clean-room. The entire process module utilizes
various evaluation equipment in order to provide
output feedback to member companies for further
development of semiconductor materials. CASMAT clean-room in operation
(approx. 1300 䋛)
TASK 㸇
Development and optimization of evaluation and between the materials and manufacturing
systems that can precisely evaluate material processes which are to be applied to next-
performance at the nanometer level in generation LSI.
consideration of the mutual influence between
materials
TASK 㸈
Tools (called “integrated component Such tools will also be used to evaluate the
development aid tools” or a “High Performance mutual influence between as well as between
Test Element Group”) will be developed that can materials and processes.
assist in the comprehensive evaluation of not
only the electrical characteristics of
semiconductor but also their reliability.
TASK 㸉
Proposals for highly reliable components (in the aforementioned evaluation technologies䇭and
terms of both materials and processes) that are development aid tools. Also, putting materials to
suitable for multilayer circuits for next- industrial use through the technical expertise
generation semiconductors will be considered acquired in the course of carrying out this
based on the technical expertise acquired project will be studied.
through the use of
Multi-layer circuit TEG (300 mm diameter wafer)
Contact Information

Tel:+81-44- 520-5220
Consortium for Advanced Semiconductor Materials and Related Technologies
Tel:+81-42 - 327-8090
http://www.casmat.or.jp/
34
Program for Fundamental Technologies of Advanced Information and Telecommunications Equipment and Devices
Development of Phonic Network Technology
Keywords: Photonic network, WDM, Quantum dot, Photonic crystal transration

R&D Term: FY2001~FY2006 Budget for FY2005: 840million yen
Background
Information and communication technology has and to establish new technologies as seeds for
been rapidly developing, and network systems are new industries up to FY2006. It is especially
xpected to spread widely in the near future. The important to develop photonic network technology
establishment of an IT infrastructure by which and optical switching systems that will play an
we can create, communicate and share important important role for advancing networks.
information and knowledge without restriction of As research and development of a low energy
location and time is learly now in the future. For node system includes core technology to realize
this reason, further development of photonic network systems, devices that will be
ultra-high-speed network technology is needed in 5 to 7 years will be developed to
indispensable to achieve an IT environment as establish ultra-high speed and large capacity
fundamental technology to create high-speed, electronic control optical switching systems.
high-reliability and high-performance IT systems. Furthermore, research and develop ment of many
This project is part of the information core technologies needed for optical control optical
communication foundation advanced program switching will be carried out, therebr improving
Chaking Eng. tmslation, now. aiming to achieve transmission efficiency in the next ten years.
breakthroughs for next-generation technology
Optical Switching Node

㪩㫆㫌㫋㪼㫉㩷㪫㫉㪸㫅㫊㪸㪺㫋㫀㫆㫅㩷㪪㫇㪼㪼㪻
Optical Level
Controler Optical AMP
㪈㪧㪹㪆㫊 WDM
demux Array
Optical Switching Optical
㪈㪇㪇㪫㪹㪆㫊
Optical Router AMP
㪈㪇㪫㪹㪆㫊
Electronic Limit
WDM
㪈㪫㪹㪆㫊 Electronic Router
䌊䌵䌮䌩䌰䌥䌲㪤㪈㪍㪇 MUX
䌊䌵䌮䌩䌰䌥䌲䌔㪍㪋㪇
㪈㪇㪇㪞㪹㪆㫊㪚㫀㫊㪺㫆㪈㪉㪇㪈㪉㪚㫀㫊㪺㫆㪈㪉㪋㪈㪍
㪦㫍㪼㫉㩷㪉㩷㫋㫀㫄㪼㫊㩷㪆㩷㫐㪼㪸㫉
㪈㪇㪞㪹㪆㫊㪚㫀㫊㪺㫆㪎㪌㪈㪊
Traphic change of 䌊䌐䌉䌘䋨1998-2003䋩
㪈㪞㪹㪆㫊
㪈㪇㪇㪤㪹㪆㫊 Optical SW
Tunable LD
Multi-㱗Source
㪈㪇㪤㪹㪆㫊
㫐㪼㪸㫉
㪈㪐㪐㪉㪈㪐㪐㪋㪈㪐㪐㪍㪈㪐㪐㪏㪉㪇㪇㪇㪉㪇㪇㪉㪉㪇㪇㪋㪉㪇㪇㪍㪉㪇㪇㪏㪉㪇㪈㪇
Wavelength
Converter
Organization
Project Leader
Professor Y. NAKANO and Y. ARAKAWA
University of Tokyo,
Optoelectronic Industry and
Technology Development Association
Prof. Y. NAKANO Prof. Y. ARAKAWA
Contents
communications. Since further demand for the
[1] Development of Ultra-high-speed and Large
Capacity Electronic Control Wavelength Multiple scale of communications systems is expected,
Optical Switching Node Device further technical innovation of switching for
Wavelength division multiplexingȪWDMȫhas wavelength and routing lines at the node of core
developed along with the increase of network networks is necessary.
35
In this project, therefore, innovative optical field, it is planned to challenge not only ongoing
devices such as optical switches, optical practical uses, but also innovative development
wavelength converters, optical demultiplexers, that could provide a breakthrough beyond
wavelength tunable light sources, multiple light existing technologies.
sources and optical amplifiers will by developed.
These devices are indispensable for realization of
a node switching time of 1 msec or less and 100 [2] Next-generation Optical Switch Node
Tbps of throughput for an ultra-high -speed and Development
large capacity electronic control optical switching R&D on next-generation systems to be used
node. The focus will be research and development ten years in the future are indispensable,
of nanoscale, energy saving, integrated and especially in this field where technologies
large-scale parallel systems, and low cost to altcw develop so fast. For this reason, integration
mass production, reliabit, and multiple layer technology that enables advanced semiconductor
Connectivity will be established, considering that structures like photonic crystal and quantum dot
a node system consists of a large set of devices. to realize next generation optical switch node.
Then, an attempt will be nade to interconnect Besides, an innovative elemental technology is
optical devices and demonstrate subsystems. also developed to switch the routes of ultra-high
Since much research has been conducted on -speed optical signal of 100 Gbps as the unit of a
various ways according to today’s study of this packet.
Current
Quantum Dot Device Optical Switch
Realization of high- OUT
p Realization of High-speed Burst Optical Signal
performance optical IN
amplifier and Optical SW by EO effect
semiconductor LD n
including nano- Quantum Dot Quantum Dot S W Element
structure QD in active 㪠㩷㪥㪦㪬㪫
bed 䋭 Quantum Dot Laser䋭䋭 Quantum Dot Amplifier䋭䋭 Optical Switch䋭
Wavelength Tunable
Photonic Crystal Device 䋯Multiple Wavelength C-band
Realization of Control elecnode Optical Field
Light Source
Tunable LD䋨 active)
Wavelength Moniter
Generation of optical comb
Super continuum λ1
Micro-photonic
(passive) λ2
λ3
Optical out
circuit by 2D slab 㪣㫀㪾㪿㫋

Realization of wide-band
and Dispersion-
power
λ1… λn 㪪㫆㫌㫉㪺㪼
Wavelength
compensating
Tunable/Multiple High-Accuracy
devices High-efficiency distributed control by Wavelength Light Source Broad Band λn
Drive Volt. photonic crystal couple defective waveguide λ 1λ 2 …λ m…λ n 䋭 Wavelength Tunable 䋭 Multiple Wavelength time
䋭 2䌸 2 Optical SW䋭䋭 Dispersion
Dispersion--compensating device䋭 wavelength
Operation Light Source䋭 Light Source䋭
Contact Infomation

Electronic and Intormation Technology Development Dept.
Tel:+81-44-520-5210
Optoelectronic Industry and Technology Development Association
Tel:+81-3-5225-6431
http://www.oitda.or.jp
36

Development of Highly-Capacity Optical Storage
Technology
Keywords: Storage, Disc, Media, Optical near field, Nanopatterned media
R&D Term: FY2001᳸FY2006 Budget for FY2005: 570million yen
Background
As the speed and capacity of network optical near fields and related technologies. Basic
communication systems increases, so too does the devices for generating and detecting optical near
amount of information that Needs to be processed. fields, storage media and suitable read/write
Large capacity storage systems are indispensable devices will be developed by the end of FY2006 to
for effective data transmission and recieval To achieve systems with storage densities of 1
realize such storage systems, this project is terabit/inch2.
developing storage techniques utilizing advanced
䋨quantum optical 㪻㫀㫆㪻㪼㩷㪣㪸㫊㪼㫉

memory䋩
OPTICAL AND 䋱㫋㪼㫉㪸㪹㫀㫋㪆㫀㫅㪺㪿㪉㫇㫉㫀㫊㫄㩷㪹㪼㪸㫄㩷㫊㫇㫃㫀㫋㫋㪼㫉
MAGNETIC 㫇㪿㫆㫋㫆㪄㪻㪼㫋㪼㪺㫋㫆㫉
㪈㪇㪇㪇
(Gbpsi)
HYBRID 䇭OPTICAL NEAR FIELD 㫊㫌㫊㫇㪼㫅㫊㫀㫆㫅

㪛㪼㫅㫊㫀㫋㫐䋨㪞㪹㫇㫊㫀䋩
RECORDING hologram 㫇㫉㫆㪹㪼㩷㪿㪼㪸㪻㫄㫆㪻㫌㫃㪸㫋㫆㫉

para magnetic
䇭䇭 multi-value/multi-layer
㫉㪼㪺㫆㫉㪻㪼㪻㩷
㪩㪼㪺㫉㪻㫀㫅㪾 Density
limit
㪈㪇㪇
㫇㫀㫋㫊
UD-DVD optical
diffraction limit
Recording
HDD HD-DVD
㪈㪇㪻㫀㫊㫂
GMR DVD 㫄㫆㫋㫀㫆㫅
㫆㫇㫋㫀㪺㪸㫃㩷㫅㪼㪸㫉㪄㪽㫀㪼㫃㪻
RAM䋨Removable䋩
MO
㪈㫄㪼㪻㫀㫌㫄
㪈㪐㪐㪇㪈㪐㪐㪌㪉㪇㪇㪇㪉㪇㪇㪌㪉㪇㪈㪇㪉㪇㪈㪌㪉㪇㪉㪇
㪰㪼㪸㫉
㪇㪅㪈 High Density Storage System
Roadmap for Optical Memory
Organization
Project Leader
Professor M. Ohtsu University of Tokyo,
Prof. M. OHTSU
Contents
[Ძ] Near-field Basic Technology Development high-speed reading heads. Nanoscale three-
In order to realize ultra-high density optical dimensional fabrication techniques with high
storage, it is important to develop techniques reproducibility are also being developed In
for designing near-field recording/reading addition high sensitivity reading heads
heads and media, nanofabrication techniques, utilizing polarization for nanopattern
and nanopattern measurement techniques. In measurement, will be developed, as will
this project, accordingly, simulation techniques detection techniques for a small optical signal
are being developed considering the that comes from the interaction between light
interactions between optical near fields and and nanoscale material with high resolution,
nanoscale materials. Such techniques will be high speed, and high sensitivity.
used as a design tool to develop near-field
37
㪦㫇㫋㫀㪺㪸㫃㩷㫅㪼㪸㫉㩷㪽㫀㪼㫃㪻
㫇㫃㪸㫊㫄㫆㫅
㪪㫀
㪤㪼㫋㪸㫃 smaller in diameter, and tracking of the head
㪦㫇㫋㫀㪺㪸㫃㩷㫅㪼㪸㫉㪄㪽㫀㪼㫃㪻
cannot be precisely controlled by the mechanical
㪥㪼㪸㫉㪄㪽㫀㪼㫃㪻㩷㫆㫇㫋㫀㪺㪸㫃㩷㫇㫉㫆㪹㪼
㪤㪼㫋㪸㫃
head accuracy of conventional media. To overcome
these problems, nanopatterned media are being
㪪㫀
㪦㫇㫋㫀㪺㪸㫃㩷㫎㪸㫍㪼㪾㫌㫀㪻㪼
㫄㫀㫉㫉㫆㫉 developed. Nanopatterned media have memory
㪥㪸㫅㫆㪄㪽㪸㪹㫉㫀㪺㪸㫋㫀㫆㫅
㪪㫀㫄㫌㫃㪸㫋㫀㫆㫅
cells that are uniform in thems of size and are
㪦㫇㪸㫈㫌㪼㩷㪽㫀㫃㫄㪤㫀㪺㫉㫆㫃㪼㫅㫊
㪘㫇㪼㫉㫋㫌㫉㪼㪦㫇㫋㫀㪺㪸㫃㩷㫅㪼㪸㫉㪄㪽㫀㪼㫃㪻 divided by non-recordable material and have
㪥㪸㫅㫆㪄㫇㪸㫋㫋㪼㫉㫅㫄㪼㪸㫊㫌㫉㪼㫄㪼㫅㫋
position information. To achieve high density, for
Near-field Basic Technology Development
example, new recording material for optical and
[㧞] Near-field Storage Media Development magnetic hybrid recording using optical near
One terabit/inch2 storage media needs altered fields for recording and a high sensitivity
characteristics for optical near fields of 30nm or magnetic sensor for reading will be investigated.
[Ჭ] Near-field Read/Write Technology

One terabit/inch2-class optical near-field reproducing method will be developed.
recording requires a device that can generate an Head-to-disk interface technology for a low
optical spot having a diameter of several tens of flying-height slider and a system that can detect
nanometer or smaller with high-efficiency. Hybrid subtle tracking displacement for precision
recording technologies that combine a recording positioning will also be developed.
method using this device and an appropriate
㪟㫐㪹㫉㫀㪻㩷㫉㪼㪺㫆㫉㪻㫀㫅㪾㩷㫊㫐㫊㫋㪼㫄
㪩㪼㪺㫆㫉㪻㫀㫅㪾㩷㫊㫀㪾㫅㪸㫃㪩㪼㫇㫉㫆㪻㫌㪺㪼㪻㩷㫊㫀㪾㫅㪸㫃
㪜㫃㪼㪺㫋㫉㫆㫅㪄㪹㪼㪸㫄㩷㫄㪸㫊㫋㪼㫉㫀㫅㪾㪦㫇㫋㫀㪺㪸㫃㩷㪸㫅㪻㩷㫄㪸㪾㫅㪼㫋㫀㪺㩷㪿㫐㪹㫉㫀㪻㩷㫉㪼㪺㫆㫉㪻㫀㫅㪾㩷㪺㪼㫃㫃
㪛㫀㫆㪻㪼㩷㫃㪸㫊㪼㫉㪩㪼㫇㫉㫆㪻㫌㪺㫀㫅㪾㩷㪻㪼㫍㫀㪺㪼
㪦㫇㫋㫀㪺㪸㫃㩷㫅㪼㪸㫉㪄㪽㫀㪼㫃㪻㪥㪸㫅㫆㪄㫀㫄㫇㫉㫀㫅㫋
㪦㫇㫋㫀㪺㪸㫃㩷㫅㪼㪸㫉㪄㪽㫀㪼㫃㪻㩷㪾㪼㫅㪼㫉㪸㫋㫀㫅㪾㩷㪻㪼㫍㫀㪺㪼㪩㪼㪺㫆㫉㪻㫀㫅㪾㩷㫄㪼㪻㫀㫌㫄
㪤㪸㫊㫋㪼㫉㩷㪻㫀㫊㫂
㪧㫆㫊㫀㫋㫀㫆㫅㫆㫉
㪩㪼㪺㫆㫉㪻㫀㫅㪾㩷㫄㪼㪻㫀㫌㫄
㪪㫃㫀㪻㪼㫉
㪥㪸㫅㫆㪄㫇㪸㫋㫋㪼㫉㫅㪼㪻㫄㪼㪻㫀㪸
Near-field Optical Media Technology Development Near-field Optical Read/write Technology Development
Contact Information

Electronic and Intormation Technology Development Dept.
Tel:+81-44-520-5210
Tel:+81-3-5225-6431
http://www.oitda.or.jp
Tel:+81-29-861-9000
38
MEMS Project
Keywords: MEMS, RF, Optical, Sensor
R&D Term: FY2003㨪FY2005 Budget for FY2005: 830 million yen
Background
MEMS (Micro-Electro-Mechanical-Systems) This project is being implemented as part of
technology makes the manufacture of high the Focus 21 program, and it aims at
value-added components, which are excellent in developing the manufacturing technology
terms of smallness, advanced functions and necessary for a RF (radio frequency) MEMS
energy saving, possible. Therefore, expectations switch, a 3-dimensional optical cross connect
regarding its use as a new basis technology for MEMS SW and an ultra-small MEMS sensor
supporting manufacturing in Japan are rising. (acceleration sensors and so on), such products
MEMS is used for part of the acceleration are expected to represent large markets in the
sensor in automobiles, the heads of ink-jet near future at the stage of practical use.
printers, etc. at present. Moreover, it is Moreover, this project aims at building an
considered that 3-dimentsional MEMS having environment for the development and
superior performance and a complex structure production of new MEMS products utilizing the
will be applied to optical communication and technologies developed in this project for
high speed radio communication and so on in foundry service.
the future.
Organization
OMRON Corporation
Olympus Corporation
Matsushita Electric Works, Ltd.
Contents
1. Development of RF MEMS Switch Manufacturing (3) Low loss package technology
Technology Illogical packages at the RF band deteriorates the
An RF MEMS switch (Fig.1) requires a higher level high-frequency property of devices. The chip-size
of accuracy and greater reliability. To achieve this goal , package method solves this problem and makes
this research has three R&D themes. devices with a yield loss of under 0.1dB @10GHz.
(1) High precision process technology possible.
In order to stabilize the resistance variation at
contact points, deposition will be reduced and etching
rate variation and dimensional accuracy will be kept
㪤㫆㫍㪸㪹㫃㪼㩷㪼㫃㪼㪺㫋㫉㫆㪻㪼㪩㪼㫃㪼㪸㫊㪼㩷㫊㫇㫉㫀㫅㪾
under 1%.
㪚㫆㫅㫋㪸㪺㫋㩷㫊㫇㫉㫀㫅㪾
(2) Anti-sticking technology at contact points
RF MEMS switches will require a long contact life of 㪇㪭
more than 109 cycles compared to 109 cycles for 㪚㫆㫅㫋㪸㪺㫋
conventional switches, so tough contacts are 㪪㫎㫀㫋㪺㪿㫀㫅㪾㩷㪝㫀㫏㪼㪻㩷㪼㫃㪼㪺㫋㫉㫆㪻㪼
indispensable in terms of physical and electrical 㪺㫐㪺㫃㪼㫊
impacts. It is important for assuring reliability to 㪕䋱䋰䋹㪉㪋㪭
improve the process to form contacts with the material
that fulfills certain conditions (hardness, resistance,
etc). Fig. 1 Cross Section View of RF MEMS Switch
39
㪚㫆㫅㫋㫉㫆㫃㫃㪸㪹㫀㫃㫀㫋㫐㩷㫆㪽
䊚䊤䊷䈱ⷺᐲ೙ᓮᕈ䋺㩷㫄㫀㫉㫉㫆㫉㩷㪸㫅㪾㫃㪼㪑㩷㪓㪉㩷㫄㪻㪼㪾㪅
䋼
㪝㫃㪸㫋㫅㪼㫊㫊㩷㫆㪽㩷㩷㫄㫀㫉㫉㫆㫉㪑㩷㪓㪌㪇㫅㫄
䊚䊤䊷㕙䈱ᐔမ ᕈ䋺䋼㪌㪇㫅㫄 3. Development of Manufacturing Technology for
Ultra-small Sensors
㪤㫀㫉㫉㫆㫉 Wafer-level packaging of MEMS for ultra-small
㫊㫀㫀㫑㪼㪑㩷㪈㪇㪇㱘㫄㩷㫀㫅㩷㪻㫀㪸㪅 sensors (Fig.3), is being developed as follows.
(1) Low-temperature wafer bonding technology
㪫㫆㫉㫊㫀㫆㫅㪄㪹㪸㫉 Wafer bonding technology that enables bonding
of a sensor fabricated wafer to a package wafer at
room temperature with high alignment accuracy of r
Fig. 2 Schematic Diagram of 3-dimenstional Optical 2Ǵm is being developed..
Cross-Connect MEMS SW (2) High aspect ratio through hole DRIE and
electroplating technology
2. Development of Manufacturing Technology for a High aspect ratio (50: diameter of 10Ǵm, depth of
3-Dimenstional Optical Cross-Connect MEMS SW 500Ǵm) through hole DRIE technology and electroplating
Three dimensional MEMS process technology is technology to fill packaging wafer holes is being
being developed for a practical 3-dimenstional optical developed..
crossconnect MEMS SW (Fig. 2) .as follows. (3) Integration of sensor and electric circuits
(1) High precision and three-Dimensional MEMS Assembling technology that integrates packaged
fabrication technology sensors and electric circuits (ICs and passive
Precise fabrication technologies are being developed components) for signal processing is being developed.
in order to achieve an optical insertion loss of less than In order to realize such integration, low temperature
3 dB and mirror flatness of less than 50nm across 100 bump bonding is very important.
᳧ square. (4) Construction of a consistent process
(2) High precision control technology By developing the above described technologies, a
A control technique for mirror movement with an consistent process for MEMS wafer-level packaging
accuracy of less than 2m degrees in angle has been will be constructed. As a result, ultra-small sensors
developed. Simulation technology that can handle the with a package volume of less than one-tenth and a
dynamic motion of the mirror and integration cost of less than one-half of conventional sensors
technology for an MEMS mirror with a mirror packaged in resin or ceramics will be developed.
displacement sensor and IC for feedback control were
critical key factors. 㪫㪿㫉㫆㫌㪾㪿㩷㪿㫆㫃㪼㩷㪩㫆㫆㫄㩷㫋㪼㫄㫇㪼㫉㪸㫋㫌㫉㪼
(3) Measurement and evaluation technologies for 㪼㫃㪼㪺㫋㫉㫆㫇㫃㪸㫋㫀㫅㪾㪹㫆㫅㪻㫀㫅㪾㩷
reliability 䇭䇭䇭㪛㫀㪸㫄㪼㫋㪼㫉䋺㪈㪇㱘㫄㪘㫃㫀㪾㫅㫄㪼㫅㫋㩷㩷㩷
Evaluation and measurement technologies have 䇭䇭䇭㪛㪼㫇㫋㪿䋺䋼㪌㪇㪇㱘㫄㪸㪺㪺㫌㫉㪸㪺㫐䋺㪉㱘㫄
been developed in order to achieve a mirror with a 㪧㪸㪺㫂㪸㪾㪼㩷㫎㪸㪽㪼㫉
reliability of more than 109 times rotations at room 㪪㪼㫅㫊㫆㫉㩷㪺㪿㫀㫇
temperature. Analyses of temporal change of the 㪧㪸㪺㫂㪸㪾㪼㩷㫎㪸㪽㪼㫉
mechanical and optical characteristics in the 㪠㪚㩷㪺㪿㫀㫇
MEMS mirror array were key factors. Fig. 3 Schematic Diagram of Wafer-level Packaging
Contact Information

Machinery System Technology Development Dept
Tel:+81-44-520-5240
OMRON Corporation Tel:+81-77-474-2972Ტhttp://www.omron.co.jp/index2.Უ
Olympus Corporation Tel:+81-26-641-4179 Ტhttp://www.olympus.co.jp/jp/Უ
Matsushita Electric Works, Ltd. Tel+81-6-6908-0527Ტhttp://www.mew.co.jp/Უ
40
Basic Technology Research Promotion
Research on High-Resolution and High-Speed

Composition Analysis of Nanometer-Thick Films
Keywords: Thin film, Surface analysis, RBS
R&D Term: Fy2001 ~ Fy2005 Budget of Fy2005: 60million yen
Background
A high-resolution and high-speed composition gnetic heads with high depth resolution,
analysis technique and system for ultra-thin high-speed measuring, and non-destructiveness
films based on RBS (Rutherford Backscattering without standard reference materials. It is
Spectrometry) is currently being developed. The expected that this technique will contribute to
system makes it possible to analyze the significantly strengthening the process control
composition of nanometer-thick thin films such technology of the semiconductor and related
as high-k gate dielectric films and thin film ma industries in Japan.
Organization
Project Leader
Dr.A KOBAYASHI KOBE STEEL, LTD.
KOBE STEEL, LTD.
Dr.A. KOBAYASHI
Contents
[1] Introduction In this system, a cryogen-free superconducting
magnet is used to create a high magnetic field,
-Principle-
which makes it possible to collect all ions
RBS is based on collisions between atomic nuclei scattered to any azimuthal angles, and to achieve
of projectile ions and atoms in films, and occurs a high depth resolution and high-speed
when high-energy measurement. Fig. 2 shows a schematic view of
ions are incident onto incident ion scattered ion the system. It consists of an accelerator to
E0, M1
a specimen (Fig.1). 䇭 E1 scattered ion generate an ion beam, a spectrometer using the
The atomic mass of α β 䇭 E2
superconducting magnetic, a signal processing
the incident ions controller, and a PC. Control, measurement, and
should be small, such data analysis software have also been developed.
M2
as helium, so that z
the specimen is
accelerator part
ion source
high voltage generator
hardly damaged by control and signal
M2 processing part
ion irradiation. Some
beam transfer
incident ions are Fig 1. Principle of RBS
elastically scattered ion detector scattered ions controlling and
Superconducting magnetic
measuring PC
supercon-
by target atoms, and the energies of the scattered specimen
spectrometer part
ducting
ions depend on the atomic mass of the target magnet
materials. Moreover, the ions lose their energies

when they pass through the specimen. The
amount of energy loss depends on the penetration
depth of the ions below the surface. Thus, the
distribution of scattered ion energies has
Fig. 2. Schematic View of System.
information on the composition and the depth
profile of the constituent atoms in the specimen.
Measuring scattered ion energies with high [2] Equipment
resolution makes possible a film analysis with a
-Accelerator-
monolayer depth resolution. RBS is a reliable and
quantitative technique for composition analysis The accelerator mainly consists of an ion
because the collisions strictly obey a well-known source, which ionizes helium gas, a high-voltage
physical formula that is referred to as Coulomb generator (HVG; max 500 kV), and an
scattering. acceleration tube. A highly stable and compact
-Configuration- HVG of the Cockroft-Walton type, has been newly
41
developed to achieve a high resolution RBS
measurement and to make the system compact
enough to install in a laboratory. This vertical
style HVG is 30 % smaller in volume than that of
a conventional one, and its stability is less than
r5.0 × 10-4 at the setting value. This type of
accelerator has already been installed in a new
model high-resolution RBS system produced by
Kobe Steel, Ltd.
-Superconducting magnet spectrometer-

A cryogen-free superconducting magnet with
ferromagnetic pole pieces is used to generate a
vertical uniform magnetic field up to 2 Tesla in a
vacuum chamber of φ 340 mm × 600 mm. The
magnetic field distribution was designed using
both a 3D magnetic field and an ion trajectory
simulator. The magnetic field uniformity is Fig. 4. Photograph of System under
sufficient to converge the scattered ions
Development.
efficiently.
This part contains a sample transfer system, a
incident ion
㪉㪅㪇㪇㪊
nonmagnetic sample stage and an ion detector,
㪌㪇㪇
㪉㪅㪇㪇㪎
and it is presently under development.
㪉㪅㪇㪈㪈
㪉㪅㪇㪈㪌
㪋㪇㪇 [3] Software development
㪉㪅㪇㪈㪐
ion detector
㪉㪅㪇㪉㪊 It is necessary to develop a new algorithm to
㪊㪇㪇 aperture 㪉㪅㪇㪉㪎 analyze positional spectra and calculate the film,
㫑㩷㩿㫄㫄㪀
㪉㪅㪇㪊㪈
because the optics under development, where a
㪉㪅㪇㪊㪌
㪉㪅㪇㪊㪐
specimen and a detector are in the same
㪉㪇㪇
㪉㪅㪇㪋㪊 magnetic field, is unprecedented. The algorithms
scattered ion
trajectory 㪉㪅㪇㪋㪎 for positional spectra and the composition
㪈㪇㪇 specimen 㪉㪅㪇㪌㪈
analysis are being developed in cooperation with
㪉㪅㪇㪌㪌
㪉㪅㪇㪌㪐
Kyoto University.
㪇㩷
5
2.5x10
㪇㪋㪇㪏㪇㪈㪉㪇㪈㪍㪇
+
400 keV He ψ HfO2 (3nm) / Si
㪩㩷㩿㫄㫄㪀 Hf
5
2.0x10 B = 2T
Fig. 3. Magnetic Field Distribution (measured) and L = 200 mm
l = 100 mm
counts / mm
Scattered Ion Trajectory (calculated) 5

1.5x10
5
1.0x10
4
5.0x10 O
Si
0.0
100 120 140 160 180
ρd (mm)
Fig. 5. Simulated Positional Spectrum of a HfO2

Film on Si Substrate
Contact Information
Tel:+81-44-520-5220
KOBE STEEL, LTD.
Tel +81-78-992-5613
http://www.kobelco.co.jp/p047/p047e.htm
42
Rugate Filters
Keywords: Filter, Reflection, Transmission R&D Term: FY2001᳸FY2005 Budget of FY2005: 10million yen
Background
The design and manufacturing of rugate filters By applying the results of this project, new
(refractive index of the filters periodically change world class fluorescent analysis products used for
into the direction of the film thickness) are being gene analysis will be created. By pioneering a
researched and developed. This project will make new market for fluorescent analysis, the
it possible to manufacture ideal characteristic international competitiveness of Japanese
optical filters without restriction conditions in industry will be improved and a social
the filter design. contribution will be made.
Organization
Project Leader
Mr.K KAWAMATA Olympus Corporation
Olympus Corporation
Mr.K. KAWAMATA
Contents
[1] Optical Filters ᲧUsesᲧ

Optical filters are applied for various uses, for
ᲧConventional technologiesᲧ
example, cameras, microscopes, displays and
Optical filters are used when the light of a telecommunications. Optical filters are key
specific wavelength is selectively transmitted or devices, and the performance of filters should be
reflected. The actual filters are designed based on made higher to improve picture quality or
unique refractive indices of film materials. Two transmission efficiency.
materials for high and low refractive indices are This project aims to improve optical filter
usually used, and only the thickness of layers is performance, especially for fluorescent analysis
optimized. The filter for a needed performance in gene analysis. The bio industry market is
may not be able to be designed. about 1,300 billion yen, and will expand to 25,000
Several theories for optimizing thickness of billion yen in 2010. The market related to
layers have been published, and commercialize genome gene analysis will also grow to 6,000
software for the design of optical filters has billion yen in 2010, and will expand further to
already been realized. The technology for 26,000 billion yen by 2020.
optimizing the thickness of layers has advanced Fluorescent analysis is widely used in gene
enough and cannot be expected to advance much analysis, and improvement of optical filter
further in the future, that is, the performance of performance for fluorescent analysis connects
optical filters cannot be expected to advance directly with speeding up fluorescent analysis
largely by using conventional technologies. and improving performance.
43
developed. The performance of developed filters
with step-like index layers is almost equal to that
of rugate filters. As refractive indices of layers
need not be varied continuously, it will be
possible to manufacture ideal characteristic
filters in large quantities at low cost.
A technique for manufacturing filters has also
been developed. In place of unique refractive
index layers of film materials, arbitrary
Example of fluorescent refractive index layers are used for developed
analysis
filters. A precise control technique for film
=?Rugate Filters thickness is also used for manufacturing these
ᲧIndex profileᲧ filters.
Rugate filters are ideal optical filters that have
been mathematically obtained. The refractive =Ჭ?+nnovation and Effect
indices of rugate filters change in the direction of
ᲧEffect of rugate filterᲧ
the film thickness periodically and continuously.
There is no ripple of a reflection or transmission The rugate filer is a basic technology for
spectrum of the filter. By using rugate filters, Japanese industry. It will be used not only for
100% of demanded wavelength light can be biological analysis but also for various optical
detected without other wavelength light. instruments, displays, and telecommunications.
Improvement of performance will have a great
impact on the expansion of the market demand in
these areas.
ᲧEffect of arbitrary refractive indexᲧ
Index profile Conventional optical filters are designed onl
y by optimizing the thickness of layers. After
arbitrary refractive index layers are available,
optical filters will be designed free from the
Reflectance
restriction of index.
Arbitrary refractive index layers will also be
used for anti-reflection coatings and other optical
coatings. Improvement of performance of optical
coatings or reducing the number of layers may
become possible.

Optical filters will become more and more
ᲧTechnologyᲧ important in the future. The results of this
Because it is too difficult to continuously vary project will have an effect on all fields where
the refractive indices of layers, rugate filters optical thin film is used. This project will be
have not been used in the industrial world. In extremely effective for basic technological
this project, a technique for filter design has been strength reinforcement of private organizations.

Contact Information
Tel:+81-44-520-5220
Olympus Corporation
Tel +81-426-91-7210㩷㩷
http://www.olympus.co.jp/
44
Development of Nanoparticle
and Nano-Thin-Film Phosphors for FED
KeywordᲴnano-particle, nano-thin-film, phosphor
R&D TermᲴFY2001᳸FY2005 Budget for FY2005Ჴ20 million yen
Background
In this project, the goal is to produce phosphors phosphor with a low refractive film. It is possible
for field emission displays (FED) as the next- to raise the integrity of FED using this result.
generation display by making phosphors using This research will contribute to increased
nanostructuring. A low-accelerating phosphor is competitiveness in the creation of new display
produced by adding conductivity to a nanoparticle products, a field in which Japanese industry leads
phosphor and combining the nano-thin-film the world.
Organization
Project Leader
Dr.H Murakami ULVAC, Inc.
ULVAC, Inc.

Dr. H. MURAKAMI
Content
[1] Nanoparticle Phosphor
The need for a nanoparticle
FED have required operation low-voltage.
Combustionᴺ
Problems of low-voltage drive with current Y(NO3)3 or Gd(NO3)3
+Eu(NO3)3
phosphors are particle surface roughening glutamic acid
+ Zn(NO3)2
as gelling agent
generated in the milling process and charge up in water
by a alowly accelerating electron. A method mixture
for solving these problems is to produce

at 100㫦C in air
nanoparticles with good crystallinity. at 100㫦C in air
The Electroconductive addition nanoparticle

࠽ࡁ☸ሶⰯశ૕ߩSEM౮⌀
phosphor Nanoparticle
A nanoparticle phosphor was produced by a

solution method using metal salt and organic acid.
The size of the nanoparticle is about 50nm. The 1500
Y2O3Eu
2500
Y2O3Tb
phosphor became useless during milling and it Y2O3EuZn 2000

Y2O3TbZn
Luminance (cd/m2)
Gd2O3Eu
Luminance (cd/m2)
1000 Gd2O3Tb
was easy to passed an electron. Gd2O3EuZn 1500

Gd2O3TbZn
Electroconductive addition was advanced in 500

1000
order to improve nanoparticle phosphor. 500
performance The luminance of red phosphor 0 0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Y2O3:Eu and green phosphor Y2O3:Tb increased voltage (kV) voltage (kV)
two-fold. Light emission and chromaticity of a

nanoparticle phosphor are in the range that can
be used for a display.
45

Y2O3(222)
Y2O3(400)
Y2O3(211)
Y2O3(411)
Y2O3(332)
Y2O3(431)
Y2O3(440)
Y2O3(622)
ၮ᧼ടᾲ 500͠
---ၮ᧼ടᾲήߒ
䎃䎱䏒䎃䎶䏘䏅䏖䏗䏕䏄䏗䏈䎃䎫䏈䏄䏗䏌䏑䏊
---ၮ᧼ടᾲ 500͠

䎃䎶䏘䏅䏖䏗䏕䏄䏗䏈䎃䎫䏈䏄䏗䏌䏑䏊䎃䎘䎓䎓䛐
ၮ᧼ടᾲήߒ
䎋䎃䏆䏓䏖䎃䎌
䎋䎃䏆䏓䏖䎃䎌
䎕䎛䎕䎜䎖䎓䎖䎔
䎕T
䎖䎕䎖䎖䎖䎗
㪏㪇㪇
㪌㪇㫅㫄㩷ၮ᧼ടᾲ㪌㪇㪇㷄
䎕䎓䎖䎓䎗䎓䎘䎓䎙䎓䎚䎓䎛䎓
䎕T 㪈㪍㪇㫅㫄㩷ၮ᧼ടᾲ㪌㪇㪇㷄
⊒శノᐲ䇭㩿
㪍㪇㪇㪈㪍㪇㫅㫄㩷ၮ᧼ടᾲή䈚
㪺㪻㪆㫄㪉㪀
㪋㪇㪇

㪉㪇㪇
㪇
㪇㪇㪅㪌 ടㅦ㔚࿶䇭㩿㩷㫂㪭㩷㪀
㪈㪈㪅㪌㪉㪉㪅㪌㪊

Improvement of light emission efficiency
[2] Nano-Thin-Film Phosphor By forming low refractive film on glass substrate,
The necessity of nano-thin-film light emission efficiency from the phosphor is
The excitation efficiency of light emission improved. The leak from the substrate edge
worsens due to charge up of phosphor when film decreases using refraction of the light. A porous
thickness is thick in order to drive the low-voltage silica solution (ISM-2) is used for the low
needed for FED. The phosphor must be thinned refractive material. The manufacturing method
for the passage of a slowly accelerating electron for a low refractive film is very simple. Only by
and the sufficient light emission. spinning and firing the solution, the thin film of
low refractive can be formed. It is useful for a
light emission luminance increase.

φSpin and
Fire

Nano-thin-film for cathodeluminescence (R,G,B)
Nano-thin-film phosphor can be produced by
depositing body and activation material
simultaneously using the sputtering method and
EB method. In time, the crystallinity of the
Light Emission Efficiency
phosphor improves by substrate heating, and
light emission luminance also increases. In the future, a material search for further
The cathodeluminescence of nano-thin-film improvement of light emission luminance and
phosphor was confirmed using Y2O3:Eu (R), color purity and lower in the drive voltage will be
Y2O3:Tb (G) and Y2O3:Tm (B). carried out, and nanostructure phosphor for FED
will be developed.

Contact Information
Tel:+81-44-520-5220
ULVAC, Inc.
Tel:+81-298-47-8781
http://www.ulvac.co.jp/
46
Study of GaN on Si Power Devices

Keywords: MOVPE, Epitaxialgrowth, GaN, HEFT, SBD R&D Term: FY2001᳸2004
Background
From the viewpoint of environmental mobility) compared to that of Si. Though a high
preservation, saving energy is one of the most level of device performance using these materials
important issues in industry. However, energy has been reported, there has been no method for
saving for power supplies, by lowering operating low cost device fabrication that replaces Si
power consumption for example, has developed devices.
slowly because of insufficient Si device properties In this research, we will develop growth
and an overflow to the market of low efficiency technology for group III nitrides on Si and
but low-cost power supplies. GaN and SiᲽ are fabricate low loss GaN on Si electric devices.
excellent candidates for next-generation device The second target is growth on a large-diameter
materials because of their superior properties (i.e. wafer (>5” Φ) that enables realization of low cost
a high breakdown electric field and high electron devices identical to those of Si.
Organization
Project Leader
Mr.K Ohtsuka SANKEN ELECTRIC CO., LTD
SANKEN ELECTRIC CO., LTD
Mr. K. OHTSUKA
Contents
The R&D strategy for this project is divided than 1μm even on a 5” Φ Si wafer (Fig. 1). To date,
into three themes as follows: a GaN epitaxial layer with a dislocation density
ȷ Study of epitaxial growth less than 5×109cm-2 and electron mobility higher
ȷ Study of device process technology than 1600 cm2/Vs has been developed. Further,
ȷ Study of an electric circuit system wafer bending of a 2.5μm-thick GaN layer on a
In the epitaxial growth study, the goal is 5”Φ Si wafer is less than 40μm and the value is
establishment of GaN on a large-diameter Si small enough for the wafer process.
wafer (> 5”Φ) using growth technology with high
crystalline quality as well as that of GaN on a
sapphire wafer. In the study of device process
technology, development of HFET and SBD
devices for power supply use is progressing. A
breakdown voltage (BV) of 300V and 0.2ƺmm2 of
on-resistance (Ron) are the target for HFET, and
600V of breakdown voltage is the target for SBD
development. In the study of an electric circuit
system, the goal is establishment of circuit
system technology that substitutes a GaN device
for a Si device.
[1] Study of Epitaxial Growth

In the case of GaN growth on a Si wafer, GaN/Si Fig. 1 GaN Layer Growth on Si Wafer
intermixing and crack generation, originating
from large lattice mismatch and/or differences in
the coefficient of linear expansion, are serious [2] Study of device process technology
problems. H-termination of Si wafer surface and HFET and SBD device process technology for
AlN/GaN multi-interlayer insertion makes it Ron reduction and increased BV has been
possible to grow a crack-free GaN layer thicker developed. The BV of the HFET device (structure:
47
25nm-thick Al0.25GaN/ 2μm-thick GaN/ efficiency (91%) that is higher than that of a Si
interlayer/Si wafer) is higher than 1000V. Fig. 2 FRD. Further, the surge ripple that is always
shows the transition of BV and Ron of GaN on Si seen on a Si FRD has not been observed.For a
HFET devices. A level of 1/25th of the Ron rectifier diode in a PFC circuit, GaN SBD is
compared with that of the Si theoretical value has favorable because of its high cost performance.
already been obtained for the small size chip.
Fig. 3 GaN and SiC SBD Properties

Fig. 2 Transition of HFET BV and Ron Ü Conclusion Ყ
GaN on a Si device showed higher performance
[3] Study of an electric circuit system than a Si device, and therefore, expectations
A normally-on mode GaN HFET device is regarding device application have become higher.
different from the normally-off mode Si-MOS FET However, there are problems such as current
device now widely used. Consequently, it is collapse, large leakage current and poor reliability.
necessary to establish circuit technology for We are planning to accelerate R&D of GaN on a Si
normally-on mode devices. Fig. 3 compares the device toward target manufacturing as well as
operation properties of the developed GaN SBD NEDO's.
and a commercial SiC SBD mounted on a PFC
circuit. Both SBDs show almost the same

Contact Information
Tel:+81-44-520-5220
Sanken Electric Co.,Ltd.
Tel +81-48-487-6135
http://www.sanken-ele.co.jp/
48
Development of a Drug Delivery System Making Use of

Biodegradable Nanocomposite Polymer Particles
Keywords: DDSŴNanocompositeŴInhalation
R&D term: FY2001᳸2004
Background
In this project, particle design and preparation of drugs in place of conventional injection, advanced
drugs having higher performance in terms of transdermal drugs and functional cosmetics with
absorbility, release control and stabilization than controlled release, etc. Applying the results of this
conventional methods will be realized by granulation project, it is attempted to contribute to the welfare
of nanocomposite particles consisting of drug-encapsulated of the human beings by developing the new markets
biodegradable polymer nanospheres. This technology on a worldwide scale
is expected to be very useful for developing inhalation
Organization

Project Leader
Dr. YOKOYAMA
HOSOKAWA POWDER TECHNOLOGY RESEARCH INSTITUE
HOSOKAWA POWDER TECHNOLOGY RESEARCH INSTITUTE
Dr. T. YOKOYAMA
Contents
Water soluble provitamin
[1] DDS with Nanocomposite Particles Drug-encapsulated
DDS (Drug Delivery System) is a method to polymer
deliver a certain amount of a suitable drug nanocomposite
directly to the right place at a desired speed and
enables efficient administration of drugs minimizing
side effects. As a method for DDS, the encapsulation
of drugs in nano sized particles of biodegradable
ⶄวൻ
polymer PLGA (lactide-glicolide co-polymer) has
considerable potential for the development of 3-5Ǵ㨙 ࠗࡦࠬ
new high-performance drugs with as described
below. 200nm
1) Improvement of absorbility
Nanosized particles generally have much Fig. 1 Structure and Photograph of Nanocomposite
higher absorbility than micron sized ones and
Particles㩷
greater specific surface area which enables better
control of particle surface properties like affinity
and adhesiveness to human organs and residence [2] Dry Powder Inhalation
time in the body.
2) Control release
Since biodegradable drug-encapsulated nanospheres
are gradually hydrolyzed in the body and the speed
is controllable, long working hours can be obtained
with a single dose dissolving drug at a constant
reduced rate.
3) Improvement of stability
By means of encapsulation, an environmentally
sensitive drug can be protected from outside factors 㩷 Fig.2Fig. 2 Inhalation Device and DPI
and used under various conditions. Nanocomposite particles can be applied to DPI
substituting for injection. However, nanoparticles
49
with high cohesiveness and low flowability tend to [3] Application to Nanocosmetics
stick to an inhalation device or are captured in Additionally, this technology was found to be
the mouth or bronchi making agglomerates and applicable to intradermal administration. Recently,
hardly reach the depth of lung as they are. nanocosmetic material for whitening and beautifying
Therefore, it is important to make good-flowing the skin has been successfully developed using
carrier-type or agglomerate-type granules by dry nanocomposite particles introducing provitamin C
or wet particle composition methods. It is also into PLGA.
necessary that granules be dispersed to fine
particles having a diameter of 1-7 microns to
Sample : 35-year-old female side skin㩷
reach lung depth and then to be dispersed to
nanospheres. As a result of study of nanocomposites (Picture taken by Prof. Miwa, Hiroshima
and inhalation devices, the respirable fraction Prefecture.University)
reaching the lung has increased from less than
10% to more than 40%.
As shown in Fig. 3, inhalation of nanocomposite

4hrs Emidermis
particles with insulin has been proved to have
Nanocomposite㧔inhalataion㧕 Pore Dermis
2mm
Insulin soln (inhalation)
Fig. 4 Comparison of Absorbility
Insulin soln (intravenous)
䌡䋩䋨Conventional Technology䋩䌢䋩䋨New Technology 䋩
160 Insulin soln (hypodermic)
Vitamin C solution PLGA nanocomposite
140
encapsulating vitamin C
㪙㫃㫆㫆㪻㪾㫃㫌㪺㫆㫊㪼㩷㫃㪼㫍㪼㫃䋨䋦䋩
120
100
It has been confirmed that these nanocomposite
80
particles have much higher absorbility than a
60
Fig. 3 Reduction of blood solution of vitamin C as seen in Fig. 4. Its effect
40
glucose level by insulin also lasts longer by controlled release in the
20
dermis, which leads a to an increase in the
0
-4 0 4 8 12 16 20 24 28 32 36 40 44 48 amount of reductionto ascorbic acid.
㪫㫀㫄㪼㩷㩷㩿㪿㫉㪀㩷
[4] Other Applications
greater and longer effectiveness in reduction of Nanocomposite technology using biodegradable
blood glucose level than other methods. polymer can also be applied to oral administration
of peptide drugs or testing reagents, including
marking substances, and as matrix materials for
advanced particle preparation for drugs and
cosmetics.
Contact Information

Tel:+81-44-520-5220
Hosokawa Powder Technology Research Institute
Tel:+81-72-855-2234
http://www.hosokawamicron.co.jp
50
Development of Basic Technology for High Density

Surface Mount Next-Generation Semiconductor Devices
Keywords: SiP, High speed propagation
R&D Term: Fy2001~2005 Budget of Fy2005: 350 million yen
Background
The Technology Research Association for Adva tes and the evaluation of mutual compatibility
nced Jisso Functional Material (JFMAT) was f for System in Package㧔SiP㧕that will realize
ounded for the purpose of developing new basi surface mount of high speed propagation semi
c technologies for materials, processes, composi conductors onto printed circuit boards.
Organization
Project Leader
Mr.A NAKASO Hitachi Chemical Company, Ltd.
Technology Research Association for Advanced Jisso Functional Materials
Mr. A. NAKASO
Contents

-Target -Markets -
Five leading companies in the IC surface mount The outcome of this research project will
field are focusing on innovative basic technologies contribute to wide range of next-generation
to completely verify mutual interface reliability information devices in addition to SiP
and to propose new ultimate materials, processes applications.
and composites for wide range of next- generation
SiP markets.
51
-Research Themes-
Sumitomo Bakelite Co., Ltd. is developing low Toray Industries Inc. is developing high dielectric
dielectric constant thin layer organic insulation constant inter-layer organic insulation material
materials using nano composite technology. for decoupling capacitors that supplies stabilized
power to chips
Hitachi Chemical Co., Ltd. is developing fine

pitch wiring formation technology and high Shinko Electric Industries, Inc. is developing
adhesion technology for organic insulation embedded passive structure and interconnection
materials with low dielectric constant in order to technology for high speed propagation.
realize high speed signal transmission systems.
Toray
㪺
The Toray Research Center, is developing new All five participating companies will jointly
techniques to evaluate mechanical and thermal execute evaluation of the mutual interface of SiP
properties for SiP. and evaluation as complete SiP system.

Contact Information
Tel:+81-44-520-5220
Technology Research Association for Advanced Jisso Functional Materials
Tel:+81-35-715-2437
http://www.jfmat.com/
52
Advanced UV-B and C Optical Semiconductor Devices

Key words : AlGaN, Short wavelength, Ultraviolet, Optical semiconductor
Background
The invention of the blue light emitting diode (LED) and the blue laser diode (LD) has led to the
development of shorter wavelength optical semiconductors. Nowadays, due to technology limitations, the
shortest wavelength level is around 360 nm. This research program targets surpassing this limit and
developing optical semiconductors for a lower wavelength range: UV-B and C (ultraviolet wavelength
from 315nm to 200nm). Target industrial devices include sensors for flame detection and environmental
analysis, and LEDs for bill verification, genetic research, sterilization and so on. Furthermore, the
technology developed in this research program is expected to be useful for the development of advanced
LDs used for high-density optical storage.
Organization
Project Leader
Dr.M AIGA Kyosemi Corporation
Kyosemite Corporation Osaka Gas Co., Ltd.
Dr. M. AIGA
Contents
(1) Study of the Main Technical Element used as the active layer, it will be in the domain of
For blue LEDs based on InGaN, 360nm is the UV-B.
lower wavelength limit. To overcome this limit, Moreover, it was determined that a n-type or
research based on an AlGaN semiconductor was p-type could be obtained when doping this
carried out. semiconductor. A semiconductor was also
For AlGaN, the three main limitations are: developed using such crystal growth technology.
p-type formation is difficult, fabrication of high
quality electrodes is difficult, and crystal has a
CL Intensity
high defect density.
- Development of semiconductors -
㪉㪍㪇㪉㪏㪇㪊㪇㪇㪊㪉㪇㪊㪋㪇㪊㪍㪇
AlGaN is a ternary semiconductor. By changing Wavelength [nm]
the AlN mole fraction from 0 to 1, the

luminescence wavelength can be changed from Spectrum of AlGaN crystal
365nm (GaN) to 200nm (AlN). However, when
(cathodo-luminescence)
increasing the AlN mole fraction, the crystal
quality deteriorates and the resistivity of the
crystal itself becomes large. It is then difficult to - Development of electrodes -
make practical devices. In order to solve this Compared to GaN, it is difficult to produce an
problem, super-lattice (SL) structures were efficient electrode on AlGaN. When using AlGaN
fabricated. SL consists of multistacking two for the electrodes of blue LEDs, good device
different crystal layers of a few nm. on top of each performance could not be obtained. Therefore,
other By changing the thickness of each layer, it development of electrodes for AlGaN was
is possible to modify the SL property. By doing so, conducted. Also, there was an investigation on
a luminescence peak wavelength of 315nm figure different substrates other than sapphire, which is
above right was obtained. If this semiconductor is currently used. If available, conductive substrates
can be used as electrodes.
53
- Study of high quality crystal -
In order to produce highly sensitive
Intensity
photodetectors and high bright light sources, it is
Flame
necessary to improve crystal quality. For this
purpose, rather than conventional source
materials, development of new sources with low
impurity is being conducted. By using these
sources, high crystal quality is being fabricated. 200 250 300 350 400
To produce AlGaN, organometallic materials are Wavelength [nm]
used. Among them, trimethyl aluminum (TMA) is Flame Spectrum
widely used. In order to produce high quality

AlGaN, new materials to replace the conventional
TMA are being developed. Already new materials
Intensity
Solar light
sources have been obtained and growth of AlGaN
crystal is being attempted.
R2
R1
R3
Incandescent lamp
L AlH3
㪉㪇㪇㪊㪇㪇㪋㪇㪇㪌㪇㪇㪍㪇㪇㪎㪇㪇
R7
R4
Wavelength [nm]
R5 R6
㪪㫆㫃㪸㫉㩷㪸㫅㪻㩷㪠㫅㪺㪸㫅㪻㪼㫊㪺㪼㫅㫋㩷㪣㪸㫄㫇㩷㪪㫇㪼㪺㫋㫉㫌㫄
Solar and Incandescent lamp spectrum
New Al Organometallic Sources
2) Study of Devices - Development of light sources -

Nowadays, mercury lamps and Xenon lamps
- Development of photo detectors -
are the common ultraviolet light sources. They
For ultraviolet photodetectors, applications such are widely used for exposure machines and other
as flame sensors are expected. If a photodetector equipment in the semiconductor industry, for
is fabricated using AlGaN, highly sensitive hardening UV sensitive resin, for sterilization, etc.
detectors with a selective responsivity to UV-C In comparison to UV lamps, it can be expected
(200-280nm) can be achieved. A flame spectrum that UV-B LEDs based on AlGaN will have a
shows some signal around 250nm (first figure longer lifetime and lower cost. Moreover, if LDs
above). However, there is no signal below 280nm can be realized, applications to high-density
for sun radiation and electric light (secoice figure optical storage and various analysis apparatus
above). Therefore, by selectively detecting the can be expected.
250-280nm wavelengths range, sensors which are
only sensitive to flame radiation can be realized.

Contact Information
Tel:+81-44-520-5220
Kyosemi Corporation
Tel: +81-75-605-7311
http://www.kyosemi.co.jp/eghome.html
54
Development of Ultra-high-speed InP Epitaxial Crystal

Manufacturing Technologies
Keywords: Epitaxial crystal, Ultra-high-speed R&D Term: FY2002᳸FY2007 Budget : 120 million yen
Background
InP semiconductors have higher electron mobility chipsets with uniform element characteristics and
than GaAs and SiGe semiconductors. For circuit properties will require high levels of
ultra-high-speed circuits of the over 100-Gbit/s uniformity in composition, film thickness, and
class, InP semiconductors are indispensable for impurity content rate in each epitaxial layer to
meeting speed requirements. Among various improve the quality of the heterojunction
types of electronic devices, research and interfaces, as well as growth techniques for
development is currently active in the ensuring their reproducibility. Development of
commercialization of heterojunction bipolar mass-production technologies of metal organic
transistors (HBT) and high electron mobility chemical vapor deposition (MOCVD) for achieving
transistors (HEMT). The basic characteristics of these goals is the topic of the research described
elements such as InP HBT and HEMT depend herein.
largely on epitaxial layer materials and
structures. Ensuring a stable supply of low-cost
Organization
Project Leader
Dr.G ARAKI NTT Advanced Technology Corporation
NTT Advanced Technology Corporation
Dr. G. ARAKI
Contents
Communication systems
From the end of the 1990’s, a sharp increase in Ultra-high-speed circuit
the volume of communications traffic on the Among various types of high speed electronic
Internet and in traffic associated with cellular devices with compound semiconductors, research
phones has resulted in pressing demand for and development is currently active in the
communication systems capable of providing commercialization of HBT and HEMT. The typical
ultra-high-speed, large-capacity signal processing design of HBT devices uses a transistor
capacity. Although GaAs and SiGe movement perpendicular to wafers. On the other
semiconductors are used for commercially hand, HEMT devices are horizontal. Epitaxial
available transfer speeds of up to 10 Gbits/s, crystals are basic materials for both transistors.
many observers believe the performance ceiling of Since InP semiconductors are capable of higher
these materials will limit maximum transfer average carrier throughput than ordinary
rates to a little over 40 Gbits/s. For saturation velocity, they offer significant
ultra-high-speed circuits of the over 40-Gbit/s advantages in terms of current gain cut-off
class and ultra-high-speed analog and digital frequency (fT), an important characteristic
mixed circuits, anticipation is currently running parameter of transistors. The basic
high for devices incorporating faster InP characteristics of elements such as InP HBT and
semiconductors that will meet speed HEMT depend largely on epitaxial layer
requirements with sufficient operating margins. materials and structures.
In this research on InP HBT epitaxial crystal
growth technology, the great influence of HBT
device electrical characteristics on the
development of new technology carbon-doped
55
InGaAs growth without hydrogen was studied. To During study of InP HEMT epitaxial crystal
assess carbon-doped InGaAs growth, current growth, the key point in ultra-high-speed HEMT
growth techniques and a dehydrogeneration device electrical characteristics was the high
annealing method were used. On discovering that electron mobility channel InGaAs layer.
heat treatment significantly degraded HBT Generally, MOCVD uses metal organic materials,
characteristics and after determining the need for so it is difficult to remove the carbon
new materials, dopant and InGaAs growth concentration in epitaxial crystal. For this reason,
materials were examined. new InGaAs growth material and techniques
were examined aiming at pure epitaxial crystal
without carbon.
Base layer (without hydrogen)
Typical structure of HBT
Reactor of new MOCVD system
New metalorganic compounds will be effective for

solving HBT and HEMT technical problems.
However, it is impossible to use current growth
Channel layer techniques with new materials because they react
High electron mobility with each other before epitaxial growth. To
address this problem, a new MOCVD system was
developed in 2002 to facilitate the reaction of
metalorganic compounds. More recently, HBT and
Typical structure of HEMT HEMT structure epitaxial crystal was developed
using the new MOCVD system, and a
considerable amount of important basic data was
collected.
Contact Information

Tel:+81-44-520-5220
NTT Advanced Technology Corporation
Tel:+81-46-250-3344
http://www.ntt-at.co.jp/
56
Functional Nanoprobes for Bio-Property Mapping
Keywords: SPM, Biomaterials, Probe in Liquid

R&D Term: FY2003-FY2006 Budget of FY2005: 80million yen
Backgrounds
The aim of this project is to develop a scanning New technologies and instruments achieved in
probe microscope (SPM) with molecular scale this project to measure interaction among
resolution into a bio-property mapping system molecules and their applications for biology will
utilizing functional nanoprobes that can operate lead worldwide nanosciences and technologies in
stably in liquid and can measure weak the field of measurement. This will produce great
inter-molecular force and characteristics of developments in existing industries by
biomolecules in a nanoscale area. contributing to progress in life science, medical
This project will realize innovative technologies science, clinical testing and diagnosis, new
that can handle the real properties of medicine, artificial biomaterials, and so on.
biomaterials in their native states.
Organization
Project Leader
Mr.A INOUE Seiko Instruments lnc.
Seiko Instruments lnc.
Mr. A. INOUE
Contents
A SPM system for bio-property mapping

equipped with functional nanoprobes for use in
liquid and with bio-chamber, a special chamber SPM system overview
for in liquid analysis, is the main goal in the first
step of this project. The system will make it
possible to obtain the property maps of biological
samples in high resolution and high sensitivity,
which will contribute to research on new
functions and their characteristics. Functional nanoprobes
Use in liquid
[1] Observe Phenomena of Life
In order to analyze phenomena of life, it is
Bio-chamber
necessary to observe cells and biomolecules such SPM System
as proteins in their living environment, i.e. in
liquid. The high resolution SPM for biological
samples in the project is a good solution for this This system enhances application of conventional
purpose. SPM to the biological field, with its capability of
high-resolution observation using a small
57
technologies will contribute to research on the
function and structure of proteins in basic life
science. They also will realize a biomolecular
analysis system with high-throughput that can be
applied for surveys of functional natural
Probe substances and proteins with special functions.
Further R&D has been conducted on electrical
probes to measure the responses of cells to
Characterization various stimuli and tests of cell activity utilizing
㪈㪅㪈
㪈
〒㔌䋯ᝄ᏷ᷫ⴮₸
the probes. These devices will lead to new

㪇㪅㪐 ᮡḰຠ
research methods in life science to analyze
ᝄ᏷ᷫዋ₸
㪜㪙㪄㪫㫀㫇
㪇㪅㪏
వ┵䍔䍍䍢
㪇㪅㪎䈒䉍ᛮ䈐
㪇㪅㪍
㪇㪅㪌
㪇㪉㪇㪇㪇㪇㪋㪇㪇㪇㪇㪍㪇㪇㪇㪇
䍸䍨䍼䍎䊶⹜ᢱ㑆〒㔌
㪏㪇㪇㪇㪇㪈㪇㪇㪇㪇㪇㪈㪉㪇㪇㪇㪇
responses of cells to dosage.
Development of functional nano-probes using in
[3] Show the Function of Life
liquid
quantity of materials. For example, real time
pathological diagnosis will be made possible by
inspecting cells in a much shorter time. This
system can also be applied to bacteria distinction
to prevent contamination.
Cell Chromosome
Protein
Measurement and Mapping
SPM System and its Observation

Various sensors and channels on the surface of
a cell have functions to support life activities.
This means that controlling stimuli to them can
[2] Measure the Activity of Life make it possible to control functions of life such as
Expression and maintenance of the activity of proliferation and differentiation, and to
life are the results of interaction among enormous understand the mechanism of them. To do this,
numbers of biomolecules. Therefore, in order to mapping the location of sensors and channels on
approach the essence of life, it is necessary to the surface and showing reaction properties of
efficiently measure a very small force among them is necessary.
biomolecules and the very light weight of them. A SPM with functional nanoprobes in liquid can
A sensing device that can measure a very small catch the signals of life functions and visualize
interaction force utilizing functional multi them through mapping. Through functional
nanoprobes in liquid and a balancing device that nanoprobes, SPM technologies will create a new
can sense very light weights is believed to be the generation of applications and thus contribute to
best solution for the above needs. These the development of new industries.
Contact Information
Tel:+81-44-520-5220
Seiko Instruments Inc.
Tel:+81-47-392-7862
http://www.sii.co.jp

58
Development of the World First Cathodluminescence and

Raman Spectroscopic Systems Using a Near-field
Spectroscopic Technique
Key words: Nanotechnology, CL, Raman, Near-field
R&D Term: FY2003-FY2007, Budget of FY2005: 70million
Outline
CL and Raman spectroscopic systems that will be
The purpose of this project is to design a developd. If materials and devices can be
scanning electron microscope (SEM) with a high analyzed at the nanometer level, this will
spatial resolution and to develop the world’s first contribute not only to improveing the yield and
cathodluminescence(CL)and Raman spectroscopic productivity of nanodevices and nanomaterials
systems, which can characterize the strain, defect, but also to accelerate the speed of their
composition and electronic state of development by feeding back analytical results to
next-generation semiconductors such as Si and the production process. The global competitive
GaN as well as optoelectronic nanodevices strength of Japan in the nanotechnology field is
composed of Si and GaN at the nanometer level, expected to be enhanced further compared to that
using a near-field spectroscopic technique. of Europe and America A new analytical market
Furthermore, research will be conductd on and a contributon to society is expected through
electronic states in the near-infrared region of this project.
carbon nanotubes, which is expected to be
applied to nanodevices, by using the
Organization
Project Leader
Dr.M YOSHIKAWA
Toray Research Center
Toray Research Center Hitachi high-technologies Corporation
FHOTON Design Corporation
Dr.M. YOSHIKAWA
Content
Figure 1 shows a schematic diagram of the aims at the development of the world’s first CL
spectroscopic system to be developed. First, a and Raman spectroscopic systems, which can
new scanning electron microscope (SEM) Will be characterize the strain, defect, composition,
developed using a Schottky emission gun, which and electronic state of next-generation
makes probe current ten times higher than that semiconductors such as Si and GaN and
of the previous cold field emission gun. This SEM optoelectronic devices composed of Si and GaN
will also employ a new electron optical system at the nanometer level by using SEM in place
with ExB (E cross B; crossing electrostatic and of an optical microscope.
magnetic fields) signal detection technology
patented by Hitachi, Ltd., and a new type
objective lens which realizes a short focal length
by producing a magnetic field for focusing the
electron beam below the objective lens. Next, a
highly sensitive spectroscopic systems for CL and
Raman measurements at the nanometer level
using a near-field probe. Furthermore, the project
59
SEM development of the new spectroscopic systems,
SEM䇭Chamber䌲
䌓䌅䌍
the strain, defect, composition, and electronic
Optical Fiber Objective Lens
-e䇭䇭beam
state of Si and GaN in Si electronic devices and
Z
opt-devices such as a blue laser diode (LD) and
Cryostat
Band Pass Filter blue light emitting diode (LED) used for
X-Y
CCD Piezo
DVD-RAM, etc will be characterized. A study of
PM
Spectrometer
Scanner the electronic state and crystallinity of carbon
AFM Stage
nanotubes at the nanometer level will also be
SEM X-Y Stage
condudted.
Monitor
Electronic Devices
Cathodluminescence PC (GaN, Si etc.)
Transistor Electronic Devices(GaN, Si etc.)
Raman Signal (MESFET,
Communication
Satellite HEMT,HBT)Car Navigation Digital Still
Fig. 1 Spectroscopic System to Be Developed Camera
PDA CCD, Fuel Cell

At present, for a commercially available LCD, Fuel Cell
Flash memory
near-field Raman microscope, it is difficult to Flash Memory IC
characterize the strain, defect, composition and Cellular phone IC card
electronic state of materials and devices at the MESFET
HEMT,HBT
nanometer level, because of linitedl sensitivity. Satellite Fuel Cell䋺
Broadcast Carbon
For this purpose, a new near-field probe more Nanotube
Digital TV
transparent than conventional optical fiber Personal Computer
consisting of SiO2. will be developed In addition, Personal Computer TV
Society DVD-RAM
a new cryostat with a high cooling ability to Optical Fiber Blue -LD and -LED
achieve 15K for two hours as a final goal will be Electronic and Optical Devices
(GaN, Si, Carbon Nanotube, etc.)
designed.
Fig. 2 shows a schematic diagram of the
expected analytical market. After the Fig. 2 Expected Analytical Market
Information Desk
Tel:+81-44-520-5220
Toray Research Center
Tel:+81-77-533-8608
http://www.toray-research.co.jp/
60

Nanotechnology and Materials Technology Development 2006 R20

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Int roduction ······································································································· i

• Na not echnology P rogram

• Innova tive Materials Devel opment Program

Development of Phonic Network Technology ···························································· 35

Index of Key Words ······························································································ iv

Innovative Materials Development Program

Program for Fundamental Technologies of Advanced Information and

Research and development program: A policy package of research and development

*About “Focus 21”

Basic Technology Research Promotion (Private Sector Basic Technology Research

Nanotechnology Glass Project

Keywords: Glass, Sub-wavelength structure, Telecommunications

Prof .K. HIRAO

[Ძ] Telecommunications 1.0

Precise fabrication technology for wavelength- 0.8 TE

Heterogeneous Organic-inorganic hybrid membrane with high proton

Nanotechnology Metal Project

Keywords:Metal, High purity, Structure R&D Team:FY2001᳸FY2006 Budget of FY2005:300million yen

㪈㪈 Aged at 250䌾350㷄 15000

High speed Matrix

ŔŌŅĸ Fig.1 Notional

Advanced Nanocarbon Application Project

replacement and addition of certain atoms, and

Nanotechnology Particle Project

Keywords: Nanoparticles, Functional devices, Electronics & Information.

Gas-Phase Synthesis Liquid-Phase Synthesis

70nm Nanoparticle 70nm Nanoparticle

Nanostructure Coating Project

ĭ Technology for the Design and Control of

Microstructure of New TBC System Development of an EB-PVD Technique for

Synthetic Nanofunction Materials Project

Figure 3. Magnetic resistance switch device

[3] Nanomanufacturing Technology Figure 5. Laser nanoprototyping technology

Nanotechnology Material Metrology Project

A thin film sample on the holder

New Energy and Industrial Technology Development Organization

Project on Nanostructured Polymeric Materials

[1] Packaging Materials [2] Nano-Composite Materials

Acrylic rubber/epoxy resin alloy film with a

[3] Halogen-Free Materials

[4] High-Strength Fibers

Advanced Nanofabrication Process Technology Using Quantum Beams

High-speed and Precise Nanoprocessing

Full Color Rewritable Paper Using Functional Capsules Project

Keyword: Electrophoresis, Capsule, Rewritable paper

[1] Encapsulation Technology

㪮㪼㫋㩷 㫇㫉㫆㪺㪼㫊㫊㩷 㪼㫃㪼㪺㫋㫉㫆㪻㪼㩷

Surface electrophoresis method are being conducted.

probe electrophoretic display is one of the most

Nanostructure Forming for Ceramics Integration Project

R&D Term:FY2002㨪FY2006 Budget of FY2005:250 million yen

anticipated to be a key component for use in Capacitor

technology has reached its limit in the

R&D of 3D NanoScale Certified Reference Materials

High power X-ray

Wide range X-ray

X-ray Shield X-ray and noise shield

Advanced Diamond Device Project

b) Surface & interface control for diamond

One of the advantages of diamond electronic

Carbon Nanotube FED Project

 Development of a Uniform Electron Source

Gate Evaluating the Display Quality Technolo

㪮㪼㫋㩷㫇㫉㫆㪺㪼㫊㫊㩷㪼㫃㪼㪺㫋㫉㫆㪻㪼㩷

Development of a Uniform Electron Source

RECORDING hologram 㫇㫉㫆㪹㪼㩷㪿㪼㪸㪻㫄㫆㪻㫌㫃㪸㫋㫆㫉