1
Chapter 1: Signals and Amplifiers
1.1: Signals
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only needs to be sampled between 0 and 4.5 MHz
Most physical signals are analog, featuring a magnitude that can take on any
value within a certain range, and the amplitude is a continuous function - other
signals are digital, where the amplitude at specific times is within a defined set of
discrete values, such that the signal can be represented as a sequence of rational
numbers - an analog signal can first be sampled, by measuring it at regular time
intervals, and then quantized or digitized, by mapping each measurement to a
discrete value (usually through rounding)
1.4: Amplifiers
Signal amplification: Transducers typically sample a signal with too little am-
plitude for effective processing, so the signal needs to be amplified to a larger
amplitude - linear amplifiers scale the input value as a linear proportion, in or-
der to avoid distortion that adds new information - thus, ideal amplifiers exhibit
the relationship vo (t) = Avi (t), where A is the amplifier gain
3
Av = vvoi
The transfer characteristic of the linear amplifier is shown as a plot of vi against
vo , and is a straight line with slope A for a linear voltage amplifier - similarly,
a current amplifier has a current gain Ai = iioi - both types of amplifiers have a
power gain Ap = Av Ai = PPLI = vvoi iiio
Symbol conventions:
iC (t): A time-varying current signal; i.e., a total instantaneous current
IC : The time-invariant DC component of iC (t)
ic (t): The time-varying alternating component of iC (t)
Ic : The peak amplitude of ic (t)
Thus, iC (t) = IC + ic (t), and ic (t) = Ic sin(ωt)
4
1.5: Circuit Models for Amplifiers
Amplifier types:
vo
Voltage amplifier: Avo = vi
io
Current amplifier: Ais = is
5
While each amplifier type may more natively fit a particular scenario, all four
types are equivalent
In some cases, the voltage is acceptable, but the source resistance is high, and
raisin the input resistance to compensate would cause signal attenuation - a
buffer amplifier can be used to drive the voltage with greater current
6
The frequency response of an amplifier can be determined from the circuit
model, but where capacitors and inductors are replaced by their reactances
1
(for capacitors, reactance = jωC ; for inductors, reactance = jωL ) - the trans-
fer function can be represented as a complex function T (s) = VVoi (s)
(s)
, and can be
evaluated as T (jω) to determine the response to various physical frequencies
The components of the circuit also determine the shape of the responses at gain
falloff points: internal capacitance can cause a loss of gain at high frequencies,
while the inclusion of a coupling capacitor between amplifier stages can cause
a loss of gain at low frequencies - integrated circuit amplifiers typically do not
feature coupling capacitors, but are directly-coupled DC low-pass amplifiers
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Chapter 3: Semiconductors
Solid-state devices such as diodes and transistors are made from semiconduct-
ing materials- this chapter focuses on the physical properties and behavior of
semiconductor materials
Most semiconductors are made from silicon, through a specific fabrication pro-
cess - an integrated circuit containing a vast number of transistors can be carved
from a single silicon crystal, leading to a monolithic circuit - the conductivity
of silicon is altered to create these devices by the controlled introduction of
impurity atoms, in a process called doping
Silicon is the most widely used semiconducting material in use today - silicon
has four valence electrons, and can form four covalent bonds with neighbor-
ing atoms to form a regular lattice structure - at low temperatures, all covalent
bonds are intact and all electrons are non-mobile, so silicon is an insulator; how-
ever, at room temperature, an electron can break free and drift apart and move
according to an electric field (“thermal generation”) - the deficit of an electron
from its original atom creates a positively charged “hole” that attracts an elec-
tron from a neighboring atom, so the “hole” moves in the opposite direction of
the electric field - the number of free electrons and holes scales proportionally
with temperature - the conductivity of a material is measured as a number of
charge carriers per unit volume (cm3 ) - free electrons and holes also settle in
other atoms and therefore stop acting as charge carriers (“recombination”)
This process can be quantified: temperature affects the thermal generation rate,
which in turn determines the number of charge carriers, which in turn deter-
mines the recombination rate:
ni = n = p - also, p · n = (ni )2 , where:
n = the current / average / typical number of free electrons per unit volume
p = the current / average / typical number of holes per unit volume
ni = the number of charge carriers of either type (holes or electrons) per unit
volume
8
3 Eg
ni = BT 2 e 2kT , where:
B = a material-dependent parameter for the material
Eg = bandgap energy
k = Boltzmann’s constant (8.62 · 10−5 eV
K )
For silicon:
3
B = 7.3 · 15015 k − 2
Eg = 1.12eV
At room temperature, ni = 1.5 · 1010 chargecmcarriers
3
The value of ni for silicon at room temperature is too small to be useful, and also
fluctuates too much with temperature - carrier concentration can be improved
by injecting a dopant, which introduces an impurity that substantially increases
either holes or free electrons
n-type doped silicon can be created with a dopant having five valence electrons,
such as phosphorus; the extra electron becomes a donor, without creating a
hole: the positive charge remains with the dopant (“bound charge”) - the de-
gree of doping determines (ND ) determines the concentration of donor atoms,
which is usually much greater than the number of intrinsic free electrons ni ;
thus, the number of free electrons in n-type doped silicon nn ≈ ND ; the num-
ber of holes, pn , is initially unchanged, but diminishes due to recombination
with free electrons - accordingly, in n-type material, electrons are the “majority
charge carriers” and holes are the “minority charge carriers”) - when the rates
of thermal generation and recombination are equal (“thermal equilibrium”),
n2i
pn nn = n2i , where pn ≈ ND
p-type doped silicon can be created with a dopant having three valence elec-
trons, such as boron - as a consequence, boron accepts an extra electron from a
neighboring silicon atom, creating a bound negative charge at the boron atom
(“acceptor” atom) and a hole in the neighboring atom that can act as a charge
carrier - the degree of doping with acceptor atoms (NA ) creates a number of
holes (pp = NA ) that is much greater than the number of intrinsic charge charge
n2i
carriers - as above, at thermal equilibrium, pp np = n2i , where np ≈ NA
Note that both n-type and p-type silicon are electrically neutral; the type of
material just determines whether an electric current results in a propagation of
electrons or a propagation of holes
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3.3: Current Flow in Semiconductors
The hole drift current density (i.e., current of holes per cross-sectional unit area)
is:
I
Jp = Ap = qpvp−drif t
Similarly, the electron drift current density (i.e., current of electrons per cross-
sectional unit area) is:
Jn = − IAn = −qpvn−drif t
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a diffusion current from the high-concentration area to the low concentration
area
VT = kTq
This is known as the thermal voltage; at room temperature, T ≈ 300 and
VT = 25.9 mV
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depletion of free electrons in the n-type region causes some of the bound positive
charges to remain “uncovered,” and the depletion of holes in the p-type region
creates uncovered bound negative charges
The creation of uncovered bound charges in the depletion region creates a volt-
age difference across the border, and a static electric field from the n-type
material to the p-type material - this electric field serves creates a “barrier volt-
age” V0 , which is measurable over the depletion region (from the n-type region
to the p-type region) - this voltage prevents the further migration of holes and
electrons, and reduces the diffusion current
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Depletion region width: When equilibrium is reached, the width of each half
of the depletion region is proportional to the concentration of majority charge
carriers on the opposite side - the ratio of the widths is defined as:
xn NA
xp = ND , where
xn = the width of the n-type portion of the junction (adjacent to the n-type
region but positively charged)
xp = the width of the p-type portion of the junction (adjacent to the o-type
region but negatively charged)
The charge stored in each half of the depletion region is defined as:
|Q+ | = qAxn ND , and
|Q− | = qAxp NA , where
A = the cross-sectional area of the material
Note that the charges are balanced: |Q+ | = |Q− |
In forward bias, the voltage VF reduces the build-in voltage V0 , which dramat-
ically raises the diffusion current ID , and diminishes the width of the depletion
region - the total observed current is I = ID − IS
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the majority carriers to cross the barrier into the opposite region - at the border
of the depletion region in the n-type region, an excess number of holes are
deposited, in the amount of:
V
pn (xn ) = pn0 e VT , where
xn refers to the boundary between the depletion region and the n-type region
2
pn0 = the equilibrium concentration of n nin
This amount is the sum of the equilibrium concentration, pn0 , and the excess
holes that are deposited by the voltage; the excess is measured as:
V
Excess = pn0 e VT − pn0
The concentration continues deeper into the diffusion region, and diminishes at
an exponential rate:
V −x−xn
pn (x) = pn0 + pn0 e VT e Lp , where
x − xn = the distance from the depletion region border
Lp = the diffusion length of the material (smaller value = faster recombination of
excess charge carriers with majority carriers in the region = more rapid dropoff
in concentration)
The same process occurs with the diffusion of electrons into the p-type region,
14
and recombination with holes - the current density created by this process is:
V
Jn (−xp ) = q D
Ln np0 (e
n VT
− 1)
In reverse-bias, when the voltage is negative and significantly greater than the
thermal voltage, the exponential term is essentially zero, so:
V
I = Is (e VT − 1) ≈ −Is , where
D
Is = Aqn2i ( Lp NpD + LD n
n NA
)
However, at a large negative voltage, breakdown occurs at a negative voltage
V = −VZ
Zener breakdown: When VZ < 5V, breakdown occurs due to the zener effect,
where the voltage is strong enough to break some covalent bonds, thus gener-
ating a significant number of mobile charge carriers - only a small change in
voltage in the neighborhood of −VZ is sufficient to create a large current
Avalanche breakdown: When VZ > 7V, breakdown occurs due to the avalanche
effect - in this model, the minority carriers crossing the depletion zone have
enough kinetic energy to break covalent bonds - the liberated charge carriers
also have a large kinetic energy, and thereby break covalent bonds between other
toms - the resulting “avalanche” of freed charge carrier creates the breakdown
current through the junction
The pn junction stores charge in two areas: the depletion region (predominant
during reverse bias), and the n-type and p-type regions (predominant during
forward bias) - different mechanisms are involved in each area
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Diffusion capacitance: In the forward-biased junction, carrier injection causes
recombination with the majority carriers in each region, causing an excess of
minority carriers - this excess manifests as a stored charge in each region - for
the p-type region, the stored charge is determined as:
Qp = Aq(pn (xn ) − pn0 )Lp = τp Ip , where
L2p
τp = Dp = hole lifetime in the n-type region
The time constants τp , τn represent the average time for an injected charge
carrier to recombine with a majority charge carrier in the region - the charge
carriers lost to recombination at this rate are replenished by the current Ip , In
- the total stored charge during forward bias is:
Q = τp Ip + τn In
this can be expressed as a function of the total current:
Q = τT I, where
τT = the mean transit time of the junction - the capacitative effect is therefore
determined as:
Cd = ( VτTT )I
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Chapter 4: Diodes
Some circuit devices exhibit nonlinear characteristics, but can be used in lin-
ear electronics - diodes are two-terminal devices that exhibit nonlinear i − v
characteristics - diodes are useful for many purposes, such as rectification and
amplification - several models can be used to represent the diode at varying
levels of accuracy and complexity
Diodes typically have a positively charged terminal (an anode) and a negatively
charged terminal (a cathode) - an ideal diode simply has two modes: when a
positive voltage is applied over the anode and cathode (“forward-biased”), the
diode behaves as a short circuit; no voltage is absorbed, and current passes
through freely (the diode is “on”) - when a negative voltage is applied over
the anode and cathode (“reverse-biased”), the diode absorbs all voltage, and
passes no current (the diode is “off”) - the i − v characteristic of this device
is piecewise linear: a horizontal zero-current section at v ≤ 0, and a vertical
section at v = 0+
Diode logic gates: A combination of diodes can function as a logic gate when
provided with discrete input voltages (such as 0 volts representing a “low” value
and +5 volts representing a “high” value) - a logic OR and AND gates can be
formed this way:
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4.2: Terminal Characteristics of Junction Diodes
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The forward-bias
v
region exhibits current according to the equation:
i = IS (e VT − 1)
IS = saturation current (specific to a particular diode, and temperature-sensitive)
v = input voltage
VT = thermal voltage = kT q
k = Boltzmann’s constant = 8.62 · 10−5 eV K = 1.38 · 10
−23 J
K
T = temperature in kelvin
q = electron charge = 1.6 · 10−19 C
Alternatively, VT = 0.0862T mV; at room temperature, VT = 25.3 mV
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Since IS is temperature-sensitive, the voltage drop is also temperature-sensitive:
Breakdown region: When the reverse voltage exceeds a threshold value ( VZK
), voltage increases steeply - the diode is not destroyed in this process, but the
abrupt change in the neighborhood of VZK may cause current to change rapidly
over a small fluctuation in voltage
Graphical analysis: The Kirchhoff’s current law equation provides a line in the
v − i plot with slope − R1 (the “load line”) - the exponential model provides a
non-linear equation for the current through the diode - the intersection of these
equations provides an intersection point (the “operating point”) indicating the
actual voltage and current of the diode
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Iterative analysis: The equations above can be applied iteratively until the val-
ues converge
Example: For a diode that exhibits 1 mA at a voltage of 0.7 V, find the current
ID and voltage VD when positioned in a circuit with VDD = 5 V and R = 1 k
Ω.
Answer:
Start with the load line equation, ID = VDDR−VD :
ID = 5−0.7
1000 = 4.3mA
Next apply the exponential equation, V2 − V1 = VT ln II12 = 25mV ln II12 :
V2 = 0.7 + (25mV · ln( 4.3mA
1mA )) = 0.738 V
Apply the load line equation again:
ID = 5−0.738
1000 = 4.262mA
Apply the exponential equation again:
V2 = 0.738 + (25mV · ln( 4.262mA
4.3mA )) = 0.738 V
This yields convergence at ID = 4.262mA, V2 = 0.738V, which is our answer
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Ideal-diode model: Completely neglecting the voltage drop enables very quick
analysis, but exhibits significant inaccuracy; the constant-voltage-drop model is
almost as conceptually easy and provides a much better approximation
Voltage regulation: Diodes are used to create a regulated voltage, where a circuit
provides a constant DC voltage in spite of changes in the load and/or changes in
the power supply voltage - because the diode exhibits a nearly constant voltage
over a large range of currents, the input to a diode will exhibit a relatively
steady 0.7 V over a wide range of currents - higher voltages can be achieved by
connecting diodes in series; e.g., a series of three diodes provides a steady 2 V
over a wide range of currents
The abrupt change in the reverse breakdown region can be useful in some con-
texts, such as voltage regulators, because the diode maintains its voltage with
high precision over a range of currents - zener diodes are manufactured that
operate specifically in this range - a zener diode can be positioned in a reverse-
bias position and subjected to a negative voltage from anode to cathode (i.e., a
positive voltage over the cathode to anode); the diode consumes a very specific
voltage ( VZ ) over a range of currents ( IZ ) - the consumed voltage does change
slightly, based on an incremental resistance rz , such that δV = rz δI, but this
value is typically in the range of 10 Ω - in the actual “knee” region near VZK ,
the resistance changes abruptly, so it is best to avoid operating a zener diode
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in this region - zener diodes are available with VZ in the range of a few volts to
hundreds of volts, and can operate within a range of currents
(This process often begins with a step-down transformer: a first voltage, such as
120 V, runs through a first coil with N1 turns that induces a current in a second
coil with N2 turns, so that the voltage fed into the diode rectifier is 120 · N 2
N1
- in addition to stepping down the voltage, this also electrically insulates the
equipment from surges on the line)
Half-wave rectifier:
(
0, vs < VD
Using the constant-voltage-drop model, v0 = - two rele-
vs − VD , vs ≥ VD
vant factors for rectifier diodes: maximum current-handling capability, and peak
inverse voltage (PIV) that diode must withstand without reaching breakdown
- best to use diodes where VZK is well above the PIV - rectifier diodes also do
23
not work well for small-voltage signals; these scenarios call for a combination of
a diode and an op-amp
Bridge rectifier:
Peak rectifier:
24
(Note: This is a half-wave peak rectifier; a full-wave peak rectifier can be con-
structed by also including a diode across the load resistor) - in order to transform
an AC rectified voltage into a DC voltage, a capacitor can be added in parallel
with the load resistor - the capacitor rapidly charges when the voltage is near
its peak, and then discharges to maintain the voltage while the rectified current
falls - as the capacitor discharges, it loses a bit of voltage until the next peak
of the source voltage - the result is a nearly-DC voltage with a “ripple” as the
capacitor charges and discharges, which is determined as:
Vo = Vp − 12 Vr , where
Vp = peak voltage
Vr = ripple voltage magnitude, where
Vr = fILC
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4.6: Limiting and Clamping Circuits
Voltage limiter:
Clamped capacitor:
Voltage doubler:
26
The combination of a clamped capacitor and a peak rectifier causes an output
that is twice the magnitude of the input
Photodiodes: Most diodes are shielded from light, because photons can break
covalent bonds in the depletion and create a current - optoelectronics can make
use of this effect by exposing the junction to light that increases the current of
a set voltage when exposed to light - solar cells also make use of this effect to
transform light into voltage
Optoisolator: An LED can transform voltage into light that is then captured
by a photodiode and converted back into voltage - this combination enables the
transmission of voltage with electrical isolation, which reduces interference and
the effects of current surges and spikes
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Chapter 5: MOS Field-Effect Transistors
Many types of three-terminal devices allow the voltage between two terminals
to act as a switch that controls the flow of current through the third termi-
nal - there are two types of transistors: metal-oxide-semiconductor field-effect
transistors (MOSFETs) and bipolar junction transistors (BJTs) - MOSFETs
are widely used, particularly in integrated circuits, and can be smaller, more
energy-efficient, and more simply and cheaply manufactured than BJTs, and
integrated circuits often pack large numbers of MOSFETs into a small pack-
age - MOSFETs can also exhibit analog behavior, and ICs often implement
“mixed-mode” designs
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This structure forms pn-junctions with the source and drain regions - these
regions are ordinarily kept reverse-biased, with the drain higher than the source
- a positive voltage applied to the gate terminal causes current to flow through
the channel between the source and drain - the length ( L ) and width ( W ) of
the channel affect the performance of the device - note that, at this basic level,
the source and drain are physically identical and can be physically reversed
At zero voltage, the MOSFET acts as a pair of diodes (between the p-type
material and the source, and the p-type material and the drain), and impose a
resistance on the order of 1012 Ω
The application of a positive voltage (vGS is applied to the gate pushes free
holes under the gate further downward in the substrate; the bound negative
charges of the donor atoms are uncovered, creating a negatively charged region
- this voltage also draws electrons into this region, right under the oxide layer,
from the n-type source and drain regions - this “induced” n-type region forms
a channel (“inversion layer”) - a positive voltage is then applied between source
and drain (vDS ) allows current to flow through the channel - this structure
therefore forms a n-channel MOSFET in a general region of p-type material
Capacitative effects: The gate and channel regions form act as a parallel-plate
capacitor separated by the silicon dioxide insulator, with positive charge accu-
mulating in the gate and negative charge accumulating in the channel region -
the electric field created in the channel region controls the conductivity of the
region and the resulting current when a voltage vDS is applied
The gate has a threshold voltage Vtn , usually between 0.3 and 1 volt - when
vDS = 0, the channel has zero voltage, and the voltage across the oxide is (vGS
- an effective voltage or overdrive voltage is defined as vOV = vGS − Vtn - the
capacitance of the channel is defined as:
C = COX (W L), where
W, L = the width and length of the channel
COX = oxide capacitance (often expressed in square microns), and is defined
as:
COX = tOXOX
, where
OX = the permittivity of silicon dioxide = 3.90 = 3.45 · 10−11 F/m
tOX = the thickness of the oxide layer
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When a small positive voltage VDS is imposed between the drain and the source
while a channel is induced, the voltage creates an electric field defined as:
|E| = vDS
L
Electron drift occurs in the direction of source to drain, the amount of:
Electron drift velocity = µn |E|
This drift causes a current from drain to source, in the amount:
iD = µn Cox W L vOV vDS
In this small-voltage scenario, the channel acts as a linear resistor, with con-
ductance:
gDS = µn Cox W L vOV
The first factor, µn Cox , is determined by the material manufacturing process,
and is often expressed as the process transconductance parameter: kn0 = µn Cox ,
in units VA2
The second factor, W L , is often called the aspect ratio, and is the easiest factor to
select in order to achieve a desired conductance; manufacturing processes typ-
ically have sufficient precision to create a particular minimum channel length,
and are characterized as such, e.g., a 45-nm manufacturing process
The product of the process transconductance parameter and the aspect ra-
tio is often expressed together as the MOSFET transconductance parameter:
kn = kn0 WL
Therefore, when vDS is small, the MOSFET operates as a voltage-controlled
resistor:
1
rDS = µ C W (v
n ox L GS −Vtn )
The small-vDS MOSFET therefore has the following iD − vDS characteristic:
The resistance has slope (vGS − Vtn ); when vGS = Vtn , the line has a slope of
zero, i.e., infinite resistance
Triode region: As vDS increases while vGS is held at a constant overdrive voltage
VOV > Vtn , vDS exists as a voltage drop over the length of the channel, from
vGS = Vtn + VOV to vGD = vGS − vDS = Vtn + VOV − vDS :
30
The voltage difference between the gate and the source/drain regions determines
the depth of the channel, so the channel is deepest at the source and shallowest
at the drain - as vDS increases toward VOV , the channel resistance increases as
well, until VDS = VOV = VGS − Vtn , at which point the taper of the channel at
the drain equals zero
Saturation region: As vDS scales beyond VOV , the channel is no longer induced
at the drain end, and in fact at VDS > VGS − Vtn , the positive voltage of
the drain causes the channel to not exist even farther from the drain (“channel
pinch-off’) - as the iD −vDS characteristic shows, current saturates in this region
of operation, and is no longer dependent on vDS - the saturation region occurs
at:
VDSsat = VOV = VGS − Vtn
iD = 12 kn0 W 2
L VOV
Subthreshold region: It is not entirely true that no current flows at vGS < Vtn ;
at values of vGS very near Vtn , a small current flows - the current exhibits
exponential growth based on vGS s, much like ordinary pn junctions - some
devices are making use of the subthreshold region
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p-channel MOSFET: The same engineering process can result in the creation
of a p-channel MOSFET - starting with an n-type material, a pair of p+ source
and drain regions are formed - an oxide insulating layer is formed between,
with a gate polysilicon layer, and metal terminals are formed for the source,
drain, gate, and grounded body - the MOSFET exhibits a threshold voltage
Vtp , which is negative by convention - and a channel forms when vGS < Vtp
(i.e., when the negative voltage of the gate exceeds the threshold voltage) - in
order to discuss this in a more familiar manner, the equations are written in
terms of magnitude: |vGS | > |Vtp | - the process transconductance parameter,
kp0 = µp Cox , further determines the transistor transconductance parameter kp =
kp0 W
L - PMOS devices used to be prevalent but are now supplanted by NMOS
devices, because µn exceeds µp by a factor of 2 to 4, allowing for faster device
speeds
As noted earlier, the MOSFET is a symmetric device, so the source and drain
regions are arbitrarily selected to match the direction of current flow - in an n-
32
type MOSFET, the drain is always more positive than the source, and current
flows from drain to source; in a p-type MOSFET, the drain is always more
negative than the source, and holes (and hence current) move from source to
drain
The iD − vDS characteristics are mapped by setting vGS , and measuring the
current over the range of vDS :
33
can be problematic - however, in a large-voltage content that operates in the
linear region, the vGS model can be considered equivalent to a voltage-controlled
current source dependent upon vGS
34
The current output of the MOSFET is passed through a load resistor, and the
voltage between the resistor and the drain is the output: vDS = VDD − iD RD
When VGS < Vt , the MOSFET is in the cut-off mode; as VGS rises above Vt , the
MOSFET begins transmitting current in the saturation mode, in a near-linear
manner; and when VGS > VD S, the amplifier transitions to triode mode and
the output becomes nonlinear
dvDS
The voltage gain of the amplifier at this point is Av = dvGS , which is defined
as:
35
Av = −kn VOV RD = − 2IVDOV RD
The output is 180 degrees out of phase with the input (hence the negative gain),
and is proportional to RD , kn , VOV
The gain is restricted by the magnitude of the input:
|Avmax | = 2VDD
VOV
For a selected VDD and VGS , each selection of vgs (t) leads to a value vGS (t)
that generates a curve of iD over the range of vDS , as determined by RD :
iD = VRDD
D
− R1D vDS
The load line has four important points:
Choosing Q: If we presume that RDS is fixed but VGS is constant, the intended
use of the amplifier may guide the selection of Q - choosing a point too close
to either axis may create problems: if too close to the x-axis, a signal swing
of vGS < Vt causes the MOSFET to turn off, so the signal is “clipped” due
to insufficient “head room”; and if too close to the y-axis, a signal swing of
vGS < vDS will cause the MOSFET to enter the triode region and produce
distorted output due to insufficient “leg room”
36
5.5: Small-Signal Operation and Models
For a particular amplifier circuit, the DC bias current ID and bias voltage, at
the bias point Q, can be found by setting vGS = 0:
1
ID = r2 kn (VGS − Vt )2 = 12 kn (VOV )2
VDS = VDD − RD ID
This provides an amplifier with the range of vgs as:
VDS + Vt + VGS < vgs < VDD
The current for any value of vGS can be written as:
iD = 21 kn (VGS − Vt )2 + kn (VGS − Vt )vgs + 21 kn (vgs )2
The first term is the DC bias current; the second term is directly proportional
to vgs ; and the third component is nonlinear distortion, which is minimized to
promote linearity by keeping vgs within a small range:
vgs 2VOV
When calculated over a small range, the last term can be disregarded, and
current can be expressed as:
iD ≈ ID + id , where
id = kn (VGS − Vt )vgs
The linearity of this region can be expressed as the transconductance of the
amplifier:
gm = vigsd
= kn (VGS − Vt ) = kn VOV = δvδiD
GS
The voltage drop can similarly be expressed as the sum of the bias voltage and
the signal voltage:
vDS = VD D − RD (ID + id )
vds = −id RD = −gm vgs RD
The amplification can be written as:
Av = vvdsgs
= −gm RD
37
The small-signal amplifier can be expressed as two equivalent circuits:
• Hybrid Π model:
38
- any two of these design parameters can be selected, and the third design
parameter can be calculated accordingly
• T model:
vi
• Input resistance: Rin = ii
vo
• Open-circuit voltage gain: Avo = vi |RL =∞
39
• Voltage gain: Av = Avo RLR+R
L
o
Biasing by fixing VGS : This model involves simple biasing by fixing the gate
current, such as using a voltage divider - however, this type of biasing is difficult
to apply consistently, because some MOSFET properties ( µn , Cox ) can vary
by devices even produced using the same process, and Vt , µn are temperature-
dependent
Biasing by fixing VG :
40
A better model involves fixing VG and connecting a resistor to the source, such
that VG = VGS + RS ID - in this case, if VG VGS , then ID is determined by
VG and RS , and is therefore predictable and stable; and if VG rises above VGS ,
the resistor provides negative resistance that reduces the magnitude of changes
in the current
Connecting the drain to the gate (through a resistor RG ) causes negative feed-
back - if the current ID increases, the voltage after the resistor RD is reduced,
which reduces VGS and reduces ID - similarly, if the current decreases, the volt-
age drop over RD is less, and the gate voltage increases to allow more current
41
When the gates of two MOSFETs are connected and a current is provided
through one, the current through the other is determined as a ratio of the W
L
W2
L2
of each MOSFET: I2 = I1 W1
- this configuration is known as a current mirror
L1
42
allows the signal to bypass the input resistance of the current source - coupling
capacitors are used to isolate vsig and vo to prevent interference from the DC
input component
Common-source amplifier:
43
The inclusion of a source resistor allows an increase in the gain:
(RD ||RL ||ro )
Gv = − RGR G
+Rsig 1
+R
gm s
Common-gate amplifier:
Although presenting low gain, this amplifier presents better performance for
high-frequency signals
44
the low-frequency signal from the zero-frequency DC component; while at higher
1
frequencies, the reactance of the capacitors ( jωC ) becomes significant and
reduces the gain
45
pn junction exhibits weak-avalanche breakdown
• Punch-through: In devices with short channels, a high drain voltage can
cause pinch-off to reach all the way to the source, causing a high current
increase
Velocity saturation: High electric fields can impose an upper limit on the drift
velocity of carrier charges; in very-short-channel devices, this can occur below
vDS < 1V - this effect causes current to depend linearly on vGS rather than
2
according to vGS , and can cause gm to become independent of vGS
46
Chapter 6: Binary Junction Transistors (BJTs)
BJTs, like MOSFETs, are useful as controlled sources, as switches, and as logic
inverters - BJTs were first discovered after MOSFETs, but were more useful for a
while until MOSFET manufacturing techniques were improved - however, BJTs
are still more useful in some cases, such as extreme environmental conditions
and very-high-frequency devices (e.g., emitter-coupled logic); other contexts use
MOSFETs in conjunction with BJTs
Two types of BJTs are possible: pnp BJTs and npn BJTs - the npn BJT is
manufactured by creating a highly doped n-type emitter, a lightly doped p-
type base, and a lightly doped n-type collector, with metal contacts forming
terminals connected to each region (pnp BJTs simply reverse the doping types
of the regions) - most of the following discussion will focus on the npn BJT, but
the same properties apply to the pnp BJT
The BJT has two pn junctions: the emitter-base junction (EBJ) and the collector-
base junction (CBJ) - the relative voltages of the terminals determine whether
each junction is forward- or reverse-biased, and thus the operating properties of
the device:
Typically, the forward active mode is used when the transistor is configured as
an amplifier, and the saturation and cutoff modes are used when the transistor
is configured as a switch
47
Forward-active mode: This mode arises in the npn BJT when vE < vB < vC ,
exhibiting a conventional current from collector to emitter
In the forward active mode, the EBJ is forward-biased and the CBJ is reverse-
biased - this forward bias creates two types of current: electrons injected from
the emitter into the base, and holes injected from the base into the emitter
(the doping levels create a much higher electron current than hole current) -
the injected electrons diffuse through the base region, with the concentration
steadily diminishing across the length of the base (reduced a bit further by
recombination) - the electron concentration just beyond the EBJ is defined as:
vBE
np (0) = np0 e VT , where:
np0 is the thermal equilibrium value of majority carriers in the base region
This injection also gives rise to an electron diffusion current:
dnp (x) n (0)
In = AE qDn dx = AE qDn (− pW ), where
AE = the cross-sectional area of the emitter-base junction
Because electrons flow left-to-right (emitter-to-base), this diffusion gives rise to
a conventional current from right-to-left
48
Forward-active mode base current: The base current iB has two compo-
nents: iB1 , the injection of holes from the base region into the emitter region,
and iB2 , the supply of holes from the terminal in response to the loss of holes
from recombination - the total base current is defined as:
iB = iB1 + iB2
VBE
Since iB is proportional to e VT , just like iC , the base current is always pro-
portional to the emitter current:
iB =iC
β , where
β = the common-emitter current gain, which is a transistor parameter that is
usually in the range of 50 to 200 - it is desirable to keep β high - this factor is
inversely proportional to the length of the base region (hence W is usually kept
small), and directly proportional to the doping ratio of the base and emitter
NA
regions ( N D
)
49
This model is a voltage-controlled current source - note that the current in this
model does not scale linearly, but exponentially, with the measured voltage
50
This model is a two-port voltage-controlled current source
51
Unlike a MOSFET which is structurally symmetric and reversible, the structural
asymmetry makes this device non-reversible, with α ≈ 1 and a large β value
Reverse-active mode: This mode arises in the npn BJT when vE > vB > vC
- the BJT in reverse-active mode operates similarly to forward-active mode, but
with a much lower value of β, making this mode undesirable
Cutoff mode: This mode arises in the npn BJT when vE > vB < vC , such
that both junctions are reversed-biased - in this mode, the reverse biases of the
EBJ and CBJ effectively prevent the flow of current
Saturation mode: This mode arises in the npn BJT when vE < vB > vC ,
such that both junctions are forward-biased - note that the forward-active mode
of the npn BJT can be maintained as long as vCB ≥ −0.4 V (since forward-
bias of the pn junction only occurs at +4 V) - below this value, the npn BJT
is in saturation mode - the collector current is reduced, and the base current
increases, dependent upon vCB :
vBE vBC
iC = IS e vVT − ISC e vVT
BE BC
iB = IβS e VT + ISC e VT
This relationship causes the value of β to change based on vBC ; i.e., vBC “forces”
β to a value lower than the constant value of β in forward-active mode - the
resulting new value of β is called βforced , and is defined as:
βforced = iiB
C
|saturation ≤ β
This provides two ways to determine whether the BJT is in saturation mode:
either vCB < −0.4 V, or iiB C
<β
The depth of the saturation mode can be expressed as:
vCEsat = vBE − vCE , where
vCEsat = 0.3 V indicates that the transistor is at the edge of saturation, and
vCEsat ≤ 0.2 V indicates that the transistor is deep in the saturation region
The saturation-mode BJT can be modeled as follows:
52
The pnp BJT works in a similar manner as the npn BJT, except that the current
is mainly conducted by holes, and conventional current is from the emitter to
the collector - also, a base current runs out of the BJT rather than into the base
region
npn and pnp BJTs exhibit current flow in opposite directions, and are repre-
sented by the direction of the arrow (always pointing from positive to negative)
- currents are always measured in the positive direction - the following diagrams
show the currents of npn and pnp BJTs respectively:
53
Collector-base reverse current: The reverse current across the collector-base
junction, with the emitter open-circuited, is denoted ICBO ; the value is typically
in the nA range, and is dependent upon VCB , doubling for each 10◦ C increase
Early effect: The voltage vCE has a small but positive relationship with iC ,
which also scales with higher values of vBE - iC − vBE is a straight line, and,
extrapolating backward, we find a common point −VA that defines the relation-
ship:
54
1
acting as the base region); since IS W , a shorter effective base width increases
the current - the Early effect can be modeled as follows:
VBE
iC = IS e VT (1 + vVCE
A
)
This can also be modeled as output resistance:
ro = VA +V
IC
CE
0
We can also define IC as the collector current with the Early effect neglected,
and that ro = VI 0A
C
δiC
We can also measure β as β = δi B
; i.e., vary iB by a little, and notice the
change in iC - this property actually exhibits differences in alternating-current
and direct-current circumstances, but we can disregard this difference for now
In saturation, ICsat = βforced IB , where βforced < β - as a result, the Early ef-
fect is attenuated in saturation, but leads to significant differences in the active
mode due to larger values of β
BJT Circuits at DC
• First presume that the BJT is in forward-active mode, and verify that
behavior matches VCB > −0.4V
IC
• If not, presume that the BJT is in saturation mode, and verify that IB =
βforced < β
55
6.4: Applying the BJT in Amplifier Design
This transistor has output vCE = VCC − iC RC - the active mode shows strong
gain (steep slope) with output:
vBE
vCE = VC C − RC IS e VT
While this range, described broadly, is nonlinear, it becomes more linear on a
small scale - we can make use of this region as a linear amplifier by confining
our input to this range
Biasing the BJT: A point Q along this curve can be selected in the middle of
the range, and a constant voltage source VBE can be applied to bias the base
up to this point:
56
At this point, the BJT exhibits output:
VBE
IC = IS e VT
Then we apply to the base a second voltage source, vbe , which carries a small-
signal variation - the total instantaneous value applied to the base is:
vBE (t) = VBE + vbe (t)
This variance produces linear output vCE as long as vbe is kept small; linearity
decreases with higher magnitude of vbe
57
We can determine the VTC by graphing vCE vs.iC , for various values of vBE , and
superimposing a line representing VRC - this line (the “load line”) begins at the
horizontal axis at vCE = VCC , and has a negative slow − R1C - the intersection
of the load line with each value represents the voltage of VCE for each value of
vBE
When evaluating circuit models for small-signal amplification, first set the small
signal vbe to zero, and evaluate the circuit to determine its direct-current bias
VBE - applying a small-signal voltage over the direct-current bias results in the
following models:
vBE = VBE + vbe
Collector current: The collector current in the small-signal model is defined as:
VBE vbe
iC = IS e VT e VT
If vbe << VT , then the following approximations can be used:
iC ≈ IC (1 + vVbe
T
)
iC = IC + VICT vbe
This latter term is the signal component of the combined signal:
ic = VICT vbe
This can be rewritten using transconductance:
gm = VICT
ic = gm vbe
Transconductance defines a linear, positive relationship between vbe and iC :
Base current: As usual, the base current is a factor of the collector current, but
58
we can now separate the base current into the direct-current component and
the small-signal component:
iB = iβC = IβC + IβV
C vbe
T
= IβC (1 + vVbe
T
= IβC + vbeβgm
The small-signal component of the base current is:
ib = gβm vbe
The small-signal input resistance is defined as the resistance between the base
and the emitter, looking into the base:
rπ = vibe
b
= gβm = VIBT
Emitter current: The total emitter current can also be broken into components:
iE = iαC = IαC + iαc
The small-signal emitter resistance is defined as the resistance between the base
and the emitter, looking into the emitter:
re = vibe
e
= VIET = gαm ≈ g1m
The base resistance rπ and emitter resistance re are related as follows:
vbe = ib rπ = ie re
rπ = iieb re
59
T model: The small-signal BJT amplifier can also be equivalently represented
by a T model, with the collector and base feeding into the emitter - this model
explicitly includes the emitter resistance, re
60
Application of small-signal equivalent circuits: The process for evaluating a
circuit using a small-signal model is as follows:
Early effect in small-signal models: The models above disregard the Early effect,
but this can be modeled by supplementing each model with a resistor ro , with
the following value:
r0 = VICA
Three basic BJT amplifier configurations are possible - the small-signal version
of each amplifier can be substituted with this model:
61
Each amplifier has several properties:
vi
• Input resistance: Rin = ii
vx
• Output resistance, when vsig = 0: : Ro = ix
vo
• Voltage gain of the amplifier: Av = vi
vo
• Voltage gain of the amplifier under open-circuit conditions: Avo = vi |RL =∞
vo
• Overall voltage gain: Gv = vsig
62
• Open-circuit voltage gain: Avo = −gm (RC ||ro )
• Output resistance: Ro = RC ||ro
rπ
• Voltage gain: Av = −gm (RC ||RL ||ro ) Overall voltage gain: Gv = − rπ +R sig
gm (RC ||RL ||ro )
For the common-emitter amplifier, input resistance tends to be low (increasing
the input resistance decreases the gain), and output resistance and open-circuit
voltage gain are high
For common-base amplifiers, the Early effect is typically small and is disregarded
to simplify the analysis
63
• Output voltage: v0 = −αie Rc
• Output resistance: Ro = RC
• Voltage gain: Av = gm (RC ||RL ) - note that the low input resistance
reduces the magnitude of the input signal, and the achievable gain
C ||RL
• Overall voltage gain: Gv = α RRsigh +re
The gain of this amplifier is very small, but it maintains a good frequency
response at higher frequencies, so it is often used in combination with other
amplifier types
64
RL
• Voltage gain: Av = RL +re
(β+1)RL
• Overall voltage gain: Gv = (β+1)(RL +re )+Rsig
A BJT amplifier is biased to ensure that the gain of the amplifier remains
constant across all frequencies of interest - two biasing solutions that do not
work well: applying a fixed VBE (very small deviations in VBE lead to large
changes in the output), and providing a constant base current (variations in β
in different circuits lead to significant differences in gain)
This circuit can be evaluated by substituting the left half with its Thévenin
equivalent, and then applying KVL from the base voltage to the emitter ground
- this circuit can be made more resistant to variations in temperature and β by
RB
making VBB >> VBE and RE >> β+1 - this arrangement provides negative
feedback: if RE increases, the rise in VE causes a decrease in VBE , which reduces
the flow of current through the transistor; conversely, if RE falls, the lower VE
and higher VBE cause more current to flow across the resistor
Two-power-supply version: If two power supplies VCC , −VEE are available, the
base can be grounded (resistor RB is only needed if the signal is capacitively
coupled to the base)
65
Collector-to-base feedback resistor: A resistor connecting the collector and base
can provide negative feedback - this circuit can be analyzed by applying KVL
over VCC , RC , RB , VBE , andtheemitterground :
− VCC + IE RC + IB RB + VBE = 0
Current mirror: Two identical transistors can be connected at the base and
emitter, and a positive voltage is applied to RC of one transistor - this creates
a reference current IREF through R that must be matched by the current I in
the other transistor
Since the transistors are identical, the base currents and emitter currents are
identical; the reference current IREF is determined by applying KVL from VCC
66
through the collector-base connection, over VBE , and to −VEE :
I = IREF = VCC −VBER
+VEE
The constant-current biasing model can be combined with the amplifier types
discussed in 6.6:
When combined with any model, capacitors are used to connect the AC com-
ponents for the amplification (the capacitors connected to the input and output
terminals are called “coupling” capacitors; the capacitor coupled to the ground
is called a “bypass” capacitor)
67
Biased common-emitter circuit with unbypassed resistance:
68
Biased common-collector (voltage follower) circuit:
69
One complexity that has been disregarded is that β is dependent on the bias
current, but the bias current is typically chosen to make β as large as possible
- β is also temperature-dependent, which affects the transistor when operating
at high power levels
70