NOT RECOMMENDED FOR NEW DESIGN

USE S1A-S1M series 1N4001 - 1N4007

1.0A RECTIFIER

Features
 Diffused Junction
 High Current Capability and Low Forward Voltage Drop
 Surge Overload Rating to 30A Peak
 Low Reverse Leakage Current
 Lead Free Finish, RoHS Compliant (Note 3)

Mechanical Data
DO-41 Plastic
 Case: DO-41 Dim
Min Max
 Case Material: Molded Plastic. UL Flammability Classification A 25.40 
Rating 94V-0 B 4.06 5.21
C 0.71 0.864
 Moisture Sensitivity: Level 1 per J-STD-020D
D 2.00 2.72
 Terminals: Finish - Bright Tin. Plated Leads Solderable per All Dimensions in mm
MIL-STD-202, Method 208
 Polarity: Cathode Band
 Ordering Information: See Page 2
 Marking: Type Number
 Weight: 0.30 grams (Approximate)

Maximum Ratings and Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Unit
Peak Repetitive Reverse Voltage VRRM
Working Peak Reverse Voltage VRWM 50 100 200 400 600 800 1000 V
DC Blocking Voltage VR
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V
Average Rectified Output Current (Note 1) @ TA =+75C IO 1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
IFSM 30 A
Single Half Sine-Wave Superimposed on Rated Load
Forward Voltage @ IF = 1.0A VFM 1.0 V
Peak Reverse Current @TA = +25C 5.0
IRM A
at Rated DC Blocking Voltage @ TA = +100C 50
Typical Junction Capacitance (Note 2) Cj 15 8 pF
Typical Thermal Resistance Junction to Ambient RJA 100 K/W
Maximum DC Blocking Voltage Temperature TA +150 C
Operating and Storage Temperature Range TJ, TSTG -65 to +150 C
Notes: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.

1N4001-1N4007 1 of 3 September 2014

© Diodes Incorporated
Document number: DS28002 Rev. 9 - 3 www.diodes.com
 NOT RECOMMENDED FOR NEW DESIGN
USE S1A-S1M series

I(AV), AVERAGE FORWARD RECTIFIED CURRENT (A)

IF, INSTANTANEOUS FORWARD CURRENT (A)

1.0 10

0.8

1.0
0.6

0.4
0.1

0.2
Tj, = 25oC
Pulse Width = 300 s
2% Duty Cycle
0 0.01
40 60 80 100 120 140 160 180 0.6 0.8 1.0 1.2 1.4 1.6

TA, AMBIENT TEMPERATURE (ºC) V F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 1 Forward Current Derating Curve Fig. 2 Typical Forward Characteristics
50 100
Tj = 25ºC
IFSM, PEAK FORWARD SURGE CURRENT (A)

f = 1MHz

40

Cj, CAPACITANCE (pF)

30
1N4001 - 1N4004

10

20
1N4005 - 1N4007

10

0 1.0
1.0 10 100 1.0 10 100
NUMBER OF CYCLES AT 60 Hz VR, REVERSE VOLTAGE (V)
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current Fig. 4 Typical Junction Capacitance

Ordering Information (Note 4)

Device Packaging Shipping
1N4001-B DO-41 Plastic 1K/Bulk
1N4001-T DO-41 Plastic 5K/Tape & Reel, 13-inch
1N4002-B DO-41 Plastic 1K/Bulk
1N4002-T DO-41 Plastic 5K/Tape & Reel, 13-inch
1N4003-B DO-41 Plastic 1K/Bulk
1N4003-T DO-41 Plastic 5K/Tape & Reel, 13-inch
1N4004-B DO-41 Plastic 1K/Bulk
1N4004-T DO-41 Plastic 5K/Tape & Reel, 13-inch
1N4005-B DO-41 Plastic 1K/Bulk
1N4005-T DO-41 Plastic 5K/Tape & Reel, 13-inch
1N4006-B DO-41 Plastic 1K/Bulk
1N4006-T DO-41 Plastic 5K/Tape & Reel, 13-inch
1N4007-B DO-41 Plastic 1K/Bulk
1N4007-T DO-41 Plastic 5K/Tape & Reel, 13-inch
Note: 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf.

1N4001-1N4007 2 of 3 September 2014

© Diodes Incorporated
Document number: DS28002 Rev. 9 - 3 www.diodes.com
 NOT RECOMMENDED FOR NEW DESIGN
USE S1A-S1M series

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2014, Diodes Incorporated

www.diodes.com

1N4001-1N4007 3 of 3 September 2014

© Diodes Incorporated
Document number: DS28002 Rev. 9 - 3 www.diodes.com
 PD -90467

REPETITIVE AVALANCHE AND dv/dt RATED IRF460


HEXFET TRANSISTORS 500V, N-CHANNEL
THRU-HOLE (TO-204AA/AE)

Product Summary
Part Number BVDSS RDS(on) ID
IRF460 500V 0.27Ω 21

The HEXFETtechnology is the key to International

Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability. TO-3
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature Features:
stability of the electrical parameters. n Repetitive Avalanche Ratings
They are well suited for applications such as switching n Dynamic dv/dt Rating
power supplies, motor controls, inverters, choppers, audio n Hermetically Sealed
amplifiers and high energy pulse circuits. n Simple Drive Requirements
n Ease of Paralleling

Absolute Maximum Ratings

Parameter Units
ID @ VGS = 0V, TC = 25°C Continuous Drain Current 21
ID @ VGS = 0V, TC = 100°C Continuous Drain Current 14 A
I DM Pulsed Drain Current ➀ 84
PD @ TC = 25°C Max. Power Dissipation 300 W
Linear Derating Factor 2.4 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁ 1200 mJ
IAR Avalanche Current ➀ 21 A
EAR Repetitive Avalanche Energy ➀ 30 mJ
dv/dt Peak Diode Recovery dv/dt ➂ 3.5 V/ns
TJ Operating Junction -55 to 150
o
T STG Storage Temperature Range C
Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s)
Weight 11.5(typical) g

For footnotes refer to the last page

www.irf.com 1
01/24/01
IRF460

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BVDSS Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V, ID = 1.0mA
∆BV DSS/∆TJ Temperature Coefficient of Breakdown — 0.78 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State — — 0.27 VGS = 10V, ID = 14A ➃
Ω
Resistance — — 0.31 VGS = 10V, ID =21A ➃
VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID =250µA
Ω
gfs Forward Transconductance 13 — — S( ) VDS > 15V, IDS = 14A ➃
IDSS Zero Gate Voltage Drain Current — — 25 VDS=400V,VGS=0V
— — 250 µA VDS =400V
VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V
nA
I GSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V
Qg Total Gate Charge 84 — 190 VGS = 10V, ID=21A
Qgs Gate-to-Source Charge 12 — 27 nC VDS = 250V
Qgd Gate-to-Drain (‘Miller’) Charge 60 — 135
td(on) Turn-On Delay Time — — 35 VDD =250V, ID =21A,
tr Rise Time — — 120 RG =2.35Ω
ns
td(off) Turn-Off Delay Time — — 130
tf Fall Time — — 98
LS + LD Total Inductance — 6.1 — nH Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)

Ciss Input Capacitance — 4300 VGS = 0V, VDS = 25V

Coss Output Capacitance — 1000 — pF f = 1.0MHz
Crss Reverse Transfer Capacitance — 250 —

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions
IS Continuous Source Current (Body Diode) — — 21
A
ISM Pulse Source Current (Body Diode) ➀ — — 84

VSD Diode Forward Voltage — — 1.8 V Tj = 25°C, IS = 21A, VGS = 0V ➃

t rr Reverse Recovery Time — — 580 nS Tj = 25°C, IF = 21A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge — — 8.1 µC VDD ≤ 50V ➃
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction to Case — — 0.42
°C/W
R thJA Junction to Ambient — — 30 Typical socket mount

For footnotes refer to the last page

2 www.irf.com
 IRF460

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com 3
IRF460

13 a& b

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
4 www.irf.com
 IRF460

RD
V DS

VGS
D.U.T.
RG
+
-V DD

10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

VDS
90%

10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5
IRF460

1 5V

L D R IV E R
VD S

RG D .U .T +
V
- DD
IA S A
10V
20V
tp 0 .0 1 Ω

Fig 12a. Unclamped Inductive Test Circuit

V (B R )D S S
tp

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

IAS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

+
10 V V
QGS QGD D.U.T. - DS

VGS
VG
3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

6 www.irf.com
 IRF460

Foot Notes:
➀ Repetitive Rating; Pulse width limited by ➂ ISD ≤ 21A, di/dt ≤ 160A/µs,
maximum junction temperature. VDD≤ 500V, TJ ≤ 150°C
➁ VDD = 50V, starting TJ = 25°C, Suggested RG =2.35 Ω
Peak IL = 21A, ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Case Outline and Dimensions —TO-204AE (Modified TO-3)

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 1/01

www.irf.com 7