24/07/2018 Semiconductor Optoelectronics - - Unit 9 - Week 6

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Unit 9 - Week 6

Course
outline Assessment 6
The due date for submitting this assignment has passed. Due on 2018-03-07, 23:59 IST.
How to access
the portal Submitted assignment

Self-assessment Instructions:
before course
start 1. Answer all questions; all questions carry equal mark.

Solutions of 2. All symbols have their usual meanings.

Assessments
3. Only one of the options is correct
Week 1 4. You can see the correct answers after the last date of submission.

Week 2
Note:
Week 3 Marks obtained in this quiz will be counted towards your final score. You can take the quiz and submit it
any number of times, and the latest submitted answers will be taken as your final submission.
Week 4
Physical Constants:
Week 5
m0= 9.11 x 10-31 kg; h = 6.627 x 10-34Js; e = 1.602 x 10-19 C; kB = 1.38 x 10-23 J/K
Week 6 1) One of the most efficient methods of pumping a semiconductor to provide amplification of 1 point
light is to employ a:
Amplification by
Stimulated Forward biased p-n homojunction device
Emission
Forward biased p-n double homojunction device
The
Forward biased p-n heterojunction device
Semiconductor
(Laser) Forward biased p-n double heterojunction device
Amplifier
No, the answer is incorrect.
Quiz : Score: 0
Assessment 6
Accepted Answers:
Week 7 Forward biased p-n double heterojunction device
2) The intensity of a light beam doubles on passing through a particular 1 point
Week 8
semiconductor amplifier of device length 2.5 mm. What is the gain coefficient of the
Week 9 device?

Week 10 0.28 mm-1

2.00 mm-1
Week 11

Week 12 0.50 mm-1

Exam 0.12 mm-1

Instructions

https://onlinecourses.nptel.ac.in/noc18_ph05/unit?unit=56&assessment=60 1/3
24/07/2018 Semiconductor Optoelectronics - - Unit 9 - Week 6
No, the answer is incorrect.
Score: 0
Accepted Answers:
0.28 mm-1
3) The energy band diagram of a particular semiconductor amplifier is shown below. Determine 1 point
its amplification bandwidth.

Amplification is not possible in the given configuration

0.84x1013 Hz
2.41x1013 Hz
1.45x1014 Hz

No, the answer is incorrect.

Score: 0
Accepted Answers:
2.41x1013 Hz
4) During the spectral characterization of a particular semiconductor amplifier, the following 1 point
observations were made:

— Light of wavelength 808 nm is highly absorbed.

— Light of wavelength 812 nm gets highly amplified.
— Light of wavelengths 850, 882, 908 nm are also amplified.
— Light of wavelength 912 nm, and higher wavelengths, neither get amplified nor absorbed.

From the above observations, which of the following statements is FALSE:

Temperature of the semiconductor sample is close to 0 K.

Amplification bandwidth of the device is around 100 nm.
Bandgap of the semiconductor is less than 1.2 eV.
The semiconductor is in quasi-equilibrium.
No, the answer is incorrect.
Score: 0
Accepted Answers:
Bandgap of the semiconductor is less than 1.2 eV.
5) A semiconductor material with band gap of 3 eV is in quasi-equilibrium. What is 1 point
the minimum difference between the fermi energies of the conduction band and the
valence band, such that incident light of wavelength 400 nm is amplified by the
semiconductor?
(From the given options, choose the nearest correct value)

2.9 eV
3.0 eV
3.1 eV
3.2 eV
No, the answer is incorrect.
Score: 0
Accepted Answers:
3.1 eV

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24/07/2018 Semiconductor Optoelectronics - - Unit 9 - Week 6

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