2SD1767 / 2SD1859

Transistors

Medium power transistor (80V, 0.7A)

2SD1767 / 2SD1859

zFeatures zExternal dimensions (Unit : mm)

1) High breakdown voltage, BVCEO=80V, and
2SD1767
high current, IC=0.7A. 4.0
2) Complements the 2SB1189 / 2SB1238. 1.0 2.5 0.5

0.4
1.5
(1)

(2)

4.5
3.0

1.6
0.5
zAbsolute maximum ratings (Ta=25°C) (3)

Symbol Limits

1.5
0.4
Parameter Unit

1.5
Collector-base voltage VCBO 80 V
Collector-emitter voltage VCEO 80 V

0.4
Emitter-base voltage VEBO 5 V
IC 0.7 A(DC)
Collector current ROHM : MPT3 (1) Base
ICP 1 A(Pulse) ∗1
EIAJ : SC-62 (2) Collector
0.5
Collector power 2SD1767 (3) Emitter
PC 2 ∗2 W
dissipation
2SD1859 1 ∗3
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
2SD1859
∗1 Pw=10ms, duty=1/2 2.5
∗2 When mounted on a 40×40×0.7 mm ceramic board.
6.8
∗3 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.

4.4
0.9
1.0

0.65Max.
zPackaging specifications and hFE 14.5

Type 2SD1767 2SD1859 0.5

Package MPT3 ATV (1) (2) (3)
hFE PQR QR 2.54 2.54
1.05 0.45
Marking DC∗ −
Code T100 TV2 Taping specifications
Basic ordering unit (pieces) 1000 2500
∗Denotes h FE ROHM : ATV (1) Emitter
(2) Collector
(3) Base

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO 80 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 80 − − V IC=2mA
Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA
Collector cutoff current ICBO − − 0.5 µA VCB=50V
Emitter cutoff current IEBO − − 0.5 µA VEB=4V
Collector-emitter saturation voltage VCE(sat) − 0.2 0.4 V IC/IB=500mA/50mA
DC current transfer ratio hFE 120 − 390 − VCE/IC=3V/0.1A
Transition frequency fT − 120 − MHz VCE=10V, IE=−50mA, f=100MHz
Output capacitance Cob − 10 − pF VCB=10V, IE=0A, f=1MHz

Rev.A 1/2
 2SD1767 / 2SD1859
Transistors

zElectrical characteristics curves

50 1000
Ta=25°C Ta=25°C Ta=25°C
1.0 VCE=6V
10mA
COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : IC (mA)

7mA 20
9mA 6mA 500
5mA

DC CURRENT GAIN : hFE

8mA 10
0.8
4mA
5
3mA
0.6 200

2mA 2
VCE=5V
0.4 1 100
3V
0.5 1V
1mA
0.2 50
0.2
0 IB=0A
0.1
0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 2 5 10 20 50 100 200 500 5000

COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (mA)

Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagetion characteristics Fig.3 DC current gain vs. collector current

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

1000
Ta=25°C Ta=25°C Ta=25°C
VCE=5V
TRANSITION FREQUENCY : fT (MHz)

f=1MHz
500 IC=0A
0.2 100

0.1 50
200
IC/IB=20
0.05
10 100 20
50
0.02 10
20
5
0.01 10
2 5 10 20 50 100 200 500 1000 −1 −2 −5 −10 −20 −50 −100 0.5 1 2 5 10 20
COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V)

Fig.4 Collector-emitter saturation voltage Fig.5 Resistance raito vs. emitter current Fig.6 Collector output capacitance
vs. collector current vs. collector-base voltage

10
EMITTER INPUT CAPACITANCE : Cib (pF)

Ta=25°C
5 2
f=1MHz
COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : IC (A)

IC=0A 2
100 IC Max (Pulse) 1 IC Max Pulse
1 PW
IC Max
=1
PW

PW
500m =1 0m
0.5
=1

50
PW

D 00 s ∗
0m

200m C m
=1

s ∗
s
∗
0

D
0m

100m C
0.2
s
∗

20 50m
20m 0.1
10m Tc=25°C Tc=25°C
10
5m ∗ Single 0.05 ∗ Single
nonrepetitive nonrepetitive
2m
5 pulse pulse
1m 0.02
0.5 1 2 5 10 20 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100
EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.7 Emitter input capacitance Fig.8 Safe operating area (2SD1859) Fig.9 Safe operating area (2SD1767)
vs. emitter-base voltage

Rev.A 2/2
Appendix

Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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Should you intend to use these products with equipment or devices which require an extremely high level of
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About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1