RJK03E3DNS R07DS0659EJ0300
Silicon N Channel Power MOS FET (Previous: REJ03G1905-0200)
Rev.3.00
Power Switching Feb 01, 2012
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
RDS(on) = 9.0 m typ. (at VGS = 10 V)
Pb-free
Halogen-free
Outline
4 1, 2, 3 Source
4 3 2 1 G 4 Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 30 — — V ID = 10 mA, VGS = 0
Gate to source leak current IGSS — — ±0.1 A VGS = ±20 V, VDS = 0
Zero gate voltage drain current IDSS — — 1 A VDS = 30 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.2 — 2.5 V VDS = 10 V, I D = 1 mA
Static drain to source on state RDS(on) — 9.0 11.6 m ID = 7 A, VGS = 10 V Note4
resistance RDS(on) — 12.6 17.6 m ID = 7 A, VGS = 4.5 V Note4
Forward transfer admittance |yfs| — 27 — S ID = 7 A, VDS = 5 V Note4
Input capacitance Ciss — 750 1050 pF VDS = 10 V
Output capacitance Coss — 108 — pF VGS = 0
Reverse transfer capacitance Crss — 63 — pF f = 1 MHz
Gate Resistance Rg — 1.7 3.4
Total gate charge Qg — 5.7 — nC VDD = 10 V
Gate to source charge Qgs — 2.2 — nC VGS = 4.5 V
Gate to drain charge Qgd — 1.6 — nC ID = 14 A
Turn-on delay time td(on) — 7.1 — ns VGS = 10 V, ID = 7 A
Rise time tr — 3.8 — ns VDD 10 V
Turn-off delay time td(off) — 32 — ns RL = 1.43
Fall time tf — 4.7 — ns Rg = 4.7
Body–drain diode forward voltage VDF — 0.84 1.1 V IF = 14 A, VGS = 0 Note4
Body–drain diode reverse recovery trr — 11 — ns IF =14 A, VGS = 0
time diF/ dt = 100 A/ s
Notes: 4. Pulse test
Main Characteristics
1m
s
PW = 10 ms
10 1
DC
Operation in
Op
er
this area is
ati
5 0.1 limited by RDS(on)
on
Tc = 25 °C
0.01 1 shot Pulse
0 50 100 150 200 0.1 1 10 100
12 12
2.5 V
8 8
4 4 25°C
Tc = 75°C
VGS = 2.3 V
–25°C
0 2 4 6 8 10 0 1 2 3 4 5
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs. Static Drain to Source on State Resistance
Gate to Source Voltage vs. Drain Current
400 100
Drain to Source Saturation Voltage
VDS(on) (mV)
300 30
VGS = 4.5 V
200 10
10 V
100 ID = 10 A 3
5A
2A
1
0 4 8 12 16 20 1 3 10 30 100
Capacitance C (pF)
1000
30
Ciss
ID = 2 A, 5 A, 10 A 300
20
VGS = 4.5 V Coss
100
10 Crss
30 VGS = 0
10 V 2 A, 5 A, 10 A
f = 1 MHz
0 10
–25 0 25 50 75 100 125 150 0 10 20 30
ID = 14 A
Gate to Source Voltage VGS (V)
20 8 8
VGS = 0, –5 V
10 VDD = 25 V 4 4
10 V
0 0
0 5 10 15 20 25 0 0.4 0.8 1.2 1.6 2.0
0
25 50 75 100 125 150
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
2 PW
0.0 1 se PDM D=
0.03 . 0 pul T
0 t
ho PW
1s
T
0.01
1m 10 m 100 m 1 10
VDSS
1
EAR = L • IAP2 •
L 2 VDSS – VDD
VDS
Monitor
IAP V(BR)DSS
Monitor
IAP
Rg D. U. T VDD VDS
ID
Vin
15 V
VDD
0
td(on) tr td(off) tf
Package Dimensions
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
HWSON-8 P-HWSON8-2.9x3.1-0.65 PWSN0008JB-A ⎯ 0.022g
+0.15
−0.1
3.3 ± 0.1 0.8 Max 2.27 ± 0.2
0.4
1.55 ± 0.2
3.3 ± 0.1
2.9 ± 0.1
0.1 Min (2.55)
+0.15
−0.1
0.32 ± 0.08
0.575 Typ 0.65 Typ 0.22 Typ
0.4
3.1 ± 0.1
Stand-off
0.04Max
0Min
Ordering Information
Orderable Part Number Quantity Shipping Container
RJK03E3DNS-00-J5 5000 pcs Taping
Note: The symbol of 2nd "-" is occasionally presented as "#".