2 Semiconductor Equations
Semiconductor carrier concentrations
Thermal equilibrium
1
n p = ni2 = NcNv e-Eg/kT f(E) =
1 + e(E-Ef)/kT
N -N (Nd-Na)2 N -N (Na-Nd)2
n= d a+ + ni2 p= a d+ + ni2
2 4 2 4
Not in thermal equilibrium
d ρ q ρ q
= = (p - n + Nd+ - Na-) ∇. = = (p - n + Nd+ - Na-)
dx εs εs εs εs
Q
⌠
⌡ dA = εs
Poisson's equation
1 ∂ ∂φ 1 ∂2φ ∂2φ -ρ
cylindrical coordinates: [r ] + 2 2 + 2 =
r ∂r ∂r r ∂θ ∂z εs
1 ∂ 2 ∂φ 1 ∂ 2 ∂φ 1 ∂2φ -ρ
spherical coordinates: 2 [r ]+ 2 [r sinθ ] + 2 =
r ∂r ∂r r sinθ ∂θ ∂θ r sinθ ∂ϕ2 εs
∂p
Jp = q p µp - q Dp Jp = q p µp - q Dp ∇n Dp = µp Vt
∂x
Minority carrier rate (continuity) equations
∂np 1 (n - n ) ∂pn 1 (p - p )
∇. p - p p0 + Gn
= ∇.J ∇. n - n n0 + Gp
= - ∇.J
∂t q τn ∂t q τp
∂n ∂p P (x)
Gn = light = Gp = light = α q opt
∂t ∂t A Eph
(pn - ni2) 1
USHR = , with = Nt vth σ
[n + p + 2 ni cosh((Ei-Et)/kT)] τ0 τ0
d2n np - np0
0 = Dn - , x < -xp , Dn = µn Vt
dx2 τn
d2p pn - pn0
0 = Dp - , x > xn , Dp = µp Vt
dx2 τp
1 q Na xp2
φi - Va = χ + (Ec - Efp) - ΦM -Va = (p-type)
q 2εs
p-n junction relations (abrupt junction)
φi - Va = q Nd xn2/2εs + q Na xp2/2εs
N N 2εs 1 1
φi = Vt ln( a 2 d) xd = ( + ) (φi-Va)
ni q Na Nd
2εs Na 1 2εs Nd 1
xn = (φ -V ) xp = (φ -V )
q Nd Na+Nd i a q Na Na+Nd i a
Dp Dn
J = J0 (eVa/Vt - 1), J0 = q ni2 ( + ) (ideal current for a short diode)
NdWn' NaWp'
D p D n q x' ni V /2V
Jt = q ( p n0 + n p0 + xd ni2 b) (eVa/Vt - 1) + (e a t - 1)
Lp Ln 2τ0
where for short quasi-neutral regions (short compared to the diffusion length)
DE DB
a11 = -IES = - q A ni2 ( + )
NEwE NBwB
D
a12 = a21 = αF IES = αR ICS = - q A ni2 ( B )
NBwB
D DB
a22 = -ICS = - q A ni2 ( C + )
NCwC NBwB
1
α=
w N D
1+ B B E
wENEDB
wB2
αT = 1 -
2DBτB
q A ni2wB V /2V
IrB = (e BE t - 1)
2NBτB
dQ εs
C= =
dV xd
dv h dk
F = m* =
dt 2π dt
1 4π2 ∂2E
=
m* h2 ∂k2
2π ∂E
vg =
h ∂k
8π2 m*
∇2 Ψ + (E - V(x)) Ψ = 0
h2
ρ
∇2 φ = −
ε