AON7934

30V Dual Asymmetric N-Channel AlphaMOS

General Description Product Summary

• Latest Trench Power AlphaMOS (αMOS LV) technology Q1 Q2

• Very Low RDS(on) at 4.5VGS VDS 30V 30V
• Low Gate Charge ID (at VGS=10V) 16A 18A
• High Current Capability
RDS(ON) (at VGS=10V) <10.2mΩ <7.7mΩ
• RoHS and Halogen-Free Compliant
RDS(ON) (at VGS = 4.5V) <15.8mΩ <11.6mΩ

100% UIS Tested

Application 100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial

Power DFN3x3A Top View Bottom View

Top View Bottom View

G2
S2
S2
S2
(S1/D2)
D1

G1
D1
D1
D1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max Q1 Max Q2 Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain TC=25°C 16 18
ID
Current G TC=100°C 12 14 A
Pulsed Drain Current C IDM 64 72
Continuous Drain TA=25°C 13 15
IDSM A
Current TA=70°C 7.8 9
Avalanche Current C IAS 19 25 A
Avalanche Energy L=0.05mH C EAS 9 16 mJ
VDS Spike 100ns VSPIKE 36 36 V
TC=25°C 23 25
PD W
Power Dissipation B TC=100°C 9 10
TA=25°C 2.5 2.5
A
PDSM W
Power Dissipation TA=70°C 0.9 0.9
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Q1 Max Q1 Typ Q2 Max Q2 Units
Maximum Junction-to-Ambient A t ≤ 10s 40 50 40 50 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 70 90 70 90 °C/W
Maximum Junction-to-Case Steady-State RθJC 4.5 5.4 4.2 5 °C/W

Rev0 : April 2012 www.aosmd.com Page 1 of 10

 AON7934

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.8 2.2 V
VGS=10V, ID=13A 8.3 10.2
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 11.2 13.7
VGS=4.5V, ID=10A 12.4 15.8 mΩ
gFS Forward Transconductance VDS=5V, ID=13A 50 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous CurrentG 16 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 485 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 235 pF
Crss Reverse Transfer Capacitance 32 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.9 1.8 2.7 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 8 11 nC
Qg(4.5V) Total Gate Charge 3.9 5.3 nC
VGS=10V, VDS=15V, ID=13A
Qgs Gate Source Charge 1.1 nC
Qgd Gate Drain Charge 2.1 nC
tD(on) Turn-On DelayTime 3.5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.2Ω, 2.8 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 16.3 ns
tf Turn-Off Fall Time 3 ns
trr Body Diode Reverse Recovery Time IF=13A, dI/dt=500A/µs 9.9 ns
Qrr Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs 12.9 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev0 : April 2012 www.aosmd.com Page 2 of 10

 AON7934

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 60
10V 6V VDS=5V
8V
50
4.5V
60

4V 40
125°C
ID (A)

ID(A)
40 30
3.5V 25°C
20
20
VGS=3V 10

0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

20 1.6
Normalized On-Resistance VGS=10V
ID=13A
VGS=4.5V
15 1.4
Ω)
RDS(ON) (mΩ

10 1.2
VGS=4.5V
ID=10A
5 VGS=10V
1

0
0.8
0 2 4 6 8 10 12 14
0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)

25 1.0E+02
ID=13A
1.0E+01
20
40
1.0E+00
125°C
Ω)

15 125°C
RDS(ON) (mΩ

1.0E-01
IS (A)

1.0E-02 25°C
10
1.0E-03
25°C
5
1.0E-04

1.0E-05
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
2 4 6 8 10
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AON7934

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 700
VDS=15V
ID=13A 600
8
Ciss
500

Capacitance (pF)
VGS (Volts)

6
400

300
4
Coss
200
2 Crss
100

0 0
0 2 4 6 8 10 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200

100.0 160 TJ(Max)=150°C

10µs TC=25°C
RDS(ON)
limited
Power (W)
ID (Amps)

10.0 100us 120

1ms
1.0 DC 80

TJ(Max)=150°C
0.1 40
TC=25°C

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

RθJC=5.4°C/W
1

PD
0.1

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 0: April 2012 www.aosmd.com Page 4 of 10

 AON7934

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 40

25
Power Dissipation (W)

Current rating ID(A)

30
20

15 20

10
10
5

0
0
0 25 50 75 100 125 150
0 25 50 75 100 125 150
TCASE (°C) TCASE (°C)
Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000

TA=25°C
1000
Power (W)

100

10

1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
Zθ JA Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=90°C/W 40

0.1

PD
0.01
Ton
Single Pulse T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

Rev 0: April 2012 www.aosmd.com Page 5 of 10

 AON7934

Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.8 2.2 V
VGS=10V, ID=15A 6.3 7.7
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 8.4 10.3
VGS=4.5V, ID=10A 9.1 11.6 mΩ
gFS Forward Transconductance VDS=5V, ID=15A 100 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous CurrentG 18 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 807 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 314 pF
Crss Reverse Transfer Capacitance 40 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.6 1.3 2 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 12.9 17.5 nC
Qg(4.5V) Total Gate Charge 6 8.5 nC
VGS=10V, VDS=15V, ID=15A
Qgs Gate Source Charge 2.1 nC
Qgd Gate Drain Charge 3 nC
tD(on) Turn-On DelayTime 4.8 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1Ω, 3.3 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 18.8 ns
tf Turn-Off Fall Time 3.3 ns
trr Body Diode Reverse Recovery Time IF=15A, dI/dt=500A/µs 11.3 ns
Qrr Body Diode Reverse Recovery Charge IF=15A, dI/dt=500A/µs 15 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 0: April 2012 www.aosmd.com Page 6 of 10

 AON7934

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 60
10V 8V VDS=5V
5V
4.5V 50
80

40
60 4V 125°C
ID (A)

ID(A)
30
25°C
40
20

Vgs=3V
20 10

0 0
0 1 2 3 4 5 0 1 2 3 4 5
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

10 1.6
VGS=10V
Normalized On-Resistance
9 ID=15A
VGS=4.5V 1.4
8
Ω)
RDS(ON) (mΩ

17
7 1.2 5
2
VGS=4.5V
6
VGS=10V 1
10
ID=10A

4 0.8
0 3 6 9 12 15 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

20 1.00E+02
ID=15A
1.00E+01
15 40
125°C
Ω)

1.00E+00
RDS(ON) (mΩ

125°C
10
IS (A)

25°C
1.00E-01

5
1.00E-02
25°C

0 1.00E-03
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AON7934

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=15V
ID=15A
1000
8 Ciss

Capacitance (pF)
800
VGS (Volts)

6
600
4
Coss
400

2
200
Crss

0 0
0 3 6 9 12 15 0 5 1015 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200
TJ(Max)=150°C
TC=25°C
100.0 160
10µs
RDS(ON)
limited
ID (Amps)

Power (W)

10.0 120
100µs
DC 1ms
1.0 80

TJ(Max)=150°C
0.1 40
TC=25°C

0.0
0
0.01 0.1 1 10 100
0.0001 0.001 0.01 0.1 1 10
VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Figure 10: Single Pulse Power Rating Junction-to-
Safe Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JC Normalized Transient
Thermal Resistance

RθJC=5°C/W 40
1

PD
0.1
Single Pulse Ton
T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AON7934

Q2-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 50

25

Current rating ID(A)

Power Dissipation (W)

40
20
30
15

20
10

5 10

0
0
0 25 50 75 100 125 150
0 25 50 75 100 125 150
TCASE (°C)
TCASE (°C)
Figure 13: Current De-rating (Note F)
Figure 12: Power De-rating (Note F)

10000

TA=25°C
1000
Power (W)

100

10

1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=90°C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)

Rev 0: April 2012 www.aosmd.com Page 9 of 10

 AON7934

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 0: April 2012 www.aosmd.com Page 10 of 10