Solid State Electronics Homework #1 Due 03/20

1.1 Determine the number of atoms per unit cell in a (a) face-centered cubic, (b)
body-centered cubic, and (c) diamond lattice.

1.3 Determine the volume density of germanium atoms in a germanium

semiconductor. The lattice constant of germanium is 5.65 Å.

1.5 Consider GaAs. What is the distance (center-to-center) between nearest Ga and
As atoms?

1.7 If the lattice constant of silicon is 5.43 Å, calculate (a) the distance from the
center of one silicon atom to the center of its nearest neighbor, (b) the number
density of silicon atoms (#/cm3), and (c) the mass density (grams/cm3) of
silicon.

1.8 A crystal is composed of two elements, A and B. The basic crystal structure is a
face-centered cubic with element A at each of the corners and element B in the
face plane. The effective radius of element A is 1.02 Å. Assume the elements
are hard spheres with the surface of each A-type atom in contact with the
surface of its nearest A-type neighbor. Calculate (a) the maximum radius of the
B-type atom that will fit into this structure and (b) the volume density (#/cm3) of
both A-type atoms and B-type atoms.

1.14 Consider the (100), (110), and (111) planes in silicon. (a) Which plane has the
highest surface density of atoms? What is that density? (b) Which plane has the
smallest surface density of atoms? What is that density?

1.15 Consider a three-dimensional cubic lattice with a lattice constant equal to a0. (a)
Sketch the following planes: (i) (100), (ii) (130), and (iii) (203). (b) Sketch the
following directions: (i) [110], (ii) [311], and (iii) [123].

1.16 For a simple cubic lattice, determine the Miller indices for the planes shown in
Figure P1.16.

1.18 The lattice constant of a simple cubic cell is 5.20 Å. Calculate the distance
between the nearest parallel (a) (100), (b) (110), and (c) (111) planes.

1.20 Calculate the density of valence electrons in silicon.

1.23 Determine the angle between the tetrahedral bonds of a silicon lattice.
1.24 (a) If 4  1016 arsenic atoms per cm3 are added to intrinsic silicon as a
substitutional impurity, determine what percentage of the silicon atoms are
displaced in the single crystal lattice. (b) Repeat part (a) if 2  1015 boron atoms
per cm3 are added to intrinsic silicon.

1.25 (a) Phosphorus atoms, at a concentration of 5  1016 cm-3, are added to pure
sample of intrinsic silicon. Assume the phosphorus atoms are distributed
homogeneously throughout the silicon sample. What is the fraction by weight of
phosphorus? (b) If boron atoms, at a concentration of 1018 cm-3, are added to the
material in part (a), determine the fraction by weight of boron.

1.26 If 2  1015 gold atoms per cm3 are added to intrinsic silicon as a substitutional
impurity and are distributed uniformly throughout the semiconductor, determine
the distance between gold atoms in terms of the silicon lattice constant.
(Assume the gold atoms are distributed in a rectangular or cubic array.)

Please submit your homework to R514, EE-II