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FS6S0765RCB
Fairchild Power Switch(FPS)

Features Description
• Wide Operating Frequency Range up to 150KHz The Fairchild Power Switch(FPS) product family is specially
• Internal Burst Mode Controller for Stand-by Mode designed for an off line SMPS with minimal external
• Pulse by Pulse Over Current Limiting components. The Fairchild Power Switch(FPS) consist of
• Over Current Protection(Auto Restart Mode) high voltage power SenseFET and current mode PWM IC.
• Over Voltage Protection (Auto Restart Mode) Included PWM controller features integrated fixed oscillator,
• Over Load Protection(Auto Restart Mode) under voltage lock out, optimized gate turn on/turn off driver,
• Internal Thermal Shutdown Function(Auto Restart Mode) thermal shutdown protection, over voltage protection, and
• Under Voltage Lockout temperature compensated precision current sources for loop
• Internal High Voltage SenseFET compensation and fault protection circuitry. Compared to
• Internal Sync Terminal/Soft Start discrete MOSFET and controller or RCC switching converter
solution, a Fairchild Power Switch(FPS) can reduce total
component count, design size, and weight and at the same
time increase efficiency, productivity and system reliability.
It has a basic platform well suited for cost effective monitor
power supply.
TO-220-5L

1
1. Drain 2. GND 3. VCC
4. Feedback 5. Soft Start & Sync.

Internal Block Diagram

Vcc Drain

3 1
Vref Vpp=5.8/7.2V
SoftStart
& Sync OSC Internal
Vref
Bias
5 Vref
UVLO
Vfb Burst mode
Vth=1V controller
S
Q Ron
R
Vcc
Vth=11V/12V
Roff

Feedback PWM

4 2.5R
Ifb R
Vref Vcc Vfb Offset

Rsenese
Idelay
OCL Filter
OLP (130nsec) 2 GND
Vth=1V
Vth=7.5V
S Q TS
Vcc D
(Tj=160℃)
UVLO Reset R
OVP (Vcc=9V)
Vth=30V

Rev.1.0.0
©2002 Fairchild Semiconductor Corporation
FS6S0765RCB

Absolute Maximum Ratings


(Ta=25°C, unless otherwise specified)

Parameter Symbol Value Unit


Drain-Source(GND) Voltage (1) VDSS 650 V
Drain-Gate Voltage (RGS=1MΩ) VDGR 650 V
Gate-Source (GND) Voltage VGS ±30 V
Drain Current Pulsed (2) IDM 28 ADC
Single Pulsed Avalanche Energy (3) EAS 570 mJ
(4)
Single Pulsed Avalanche Current IAS 17 A
Continuous Drain Current (Tc = 25°C) ID 7 ADC
Continuous Drain Current (TC=100°C) ID 4.5 ADC
Supply Voltage VCC 35 V
VFB −0.3 to VCC V
Input Voltage Range
VS_S −0.3 to 10 V
PD(Watt H/S) 145 W
Total Power Dissipation
Darting 1.163 W/°C
Operating Junction Temperature Tj +150 °C
Operating Ambient Temperature TA −25 to +85 °C
Storage Temperature Range TSTG −55 to +150 °C

Note:
1. Tj = 25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 14.5mH, starting Tj = 25°C
4. L = 13uH, starting Tj = 25°C

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FS6S0765RCB

Electrical Characteristics (SenseFET part)


(Ta=25°C unless otherwise specified)

Parameter Symbol Condition Min. Typ. Max. Unit


Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 650 - - V
VDS = 650V, VGS = 0V - - 200 µA
Zero Gate Voltage Drain Current IDSS VDS= 520V
- - 300 µA
VGS = 0V, TC = 125°C
Static Drain-Source on Resistance (1) RDS(ON) VGS = 10V, ID = 1.8A - 1.3 1.6 Ω
Forward Transconductance (2) gfs VDS = 50V, ID = 1.8A - 3.3 - S
Input Capacitance Ciss - 1200 -
VGS = 0V, VDS = 25V,
Output Capacitance Coss - 125 - pF
f = 1MHz
Reverse Transfer Capacitance Crss - 23 -
Turn on Delay Time td(on) VDD= 325V, ID= 6.5A - 22 -
Rise Time tr (MOSFET switching - 70 -
time are essentially nS
Turn Off Delay Time td(off) independent of - 105 -
Fall Time tf operating temperature) - 65 -
Total Gate Charge VGS = 10V, ID = 6.5A,
Qg - 40 -
(Gate-Source+Gate-Drain) VDS = 520V (MOSFET
Gate Source Charge Qgs Switching time are - 6.5 - nC
Essentially independent of
Gate Drain (Miller) Charge Qgd Operating temperature) - 18 -

Note:
1. Pulse test : Pulse width ≤ 300µS, duty 2%
1-
2. S = ---
R

3
FS6S0765RCB

Electrical Characteristics (Continued)


(Ta=25°C unless otherwise specified)

Parameter Symbol Condition Min. Typ. Max. Unit


UVLO SECTION
Start Threshold Voltage VSTART VFB = GND 14 15 16 V
Stop Threshold Voltage VSTOP VFB = GND 8 9 10 V
OSCILLATOR SECTION
Initial Frequency FOSC - 22 25 28 kHz
Voltage Stability FSTABLE 12V ≤ Vcc ≤ 23V 0 1 3 %
Temperature Stability (2) ∆FOSC -25°C ≤ Ta ≤ 85°C 0 ±5 ±10 %
Maximum Duty Cycle DMAX - 92 95 98 %
Minimum Duty Cycle DMIN - - - 0 %
FEEDBACK SECTION
Feedback Source Current IFB VFB = GND 0.7 0.9 1.1 mA
Shutdown Feedback Voltage VSD Vfb ≥ 6.9V 6.9 7.5 8.1 V
Shutdown Delay Current Idelay VFB = 5V 1.6 2.0 2.4 µA
PROTECTION SECTION
Over Voltage Protection VOVP VCC ≥ 27V 27 30 33 V
Over Current Latch Voltage (1) VOCL - 0.9 1.0 1.1 V
Thermal Shutdown Temp. (2)
TSD - 140 160 - °C

Note:
1. These parameters, although guaranteed, are tested in EDS(wafer test) process.
2. These parameters, although guaranteed at the design, are not tested in massing production

4
FS6S0765RCB

Electrical Characteristics (Continued)


(Ta=25°C unless otherwise specified)

Parameter Symbol Condition Min. Typ. Max. Unit


SYNC & SOFTSTART SECTION
Softstart Voltage VSS Vfb = 2 4.7 5.0 5.3 V
Softstart Current ISS Vss = V 0.8 1.0 1.2 mA
Sync High Threshold Voltage VSYNCH Vcc = 16V, Vfb = 5V - 7.2 - V
Sync Low Threshold Voltage VSYNCL Vcc = 16V, Vfb = 5V - 5.8 - V
BURST MODE SECTION
Burst Mode Low Threshold Voltage VBURL Vfb = 0V 10.4 11.0 11.6 V
Burst Mode High Threshold Voltage VBURH Vfb = 0V 11.4 12.0 12.6 V
Burst Mode Enable Feedback Voltage(3) VBEN Vcc = 10.5V 0.7 1.0 1.3 V
Burst Mode Peak Current Limit(2) IBU_PK Vcc = 10.5V 0.45 0.6 0.75 V
Burst Mode Frequency FBUR Vcc = 10.5V, Vfb = 0V 40 50 60 KHz
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit(2) IOVER - 3.52 4.0 4.48 A
TOTAL DEVICE SECTION
Start Up Current ISTART Vfb = GND, VCC = 14V - 0.1 0.17 mA
IOP Vfb = GND, VCC = 16V
(1)
Operating Supply Current IOP(MIN) Vfb = GND, VCC = 10V - 10 15 mA
IOP(MAX) Vfb = GND, VCC = 28V

Note:
1. These parameters are the current flowing in the Control IC.
2. These parameters indicate Inductor Current.
3. These parameters, although guaranteed at the design, are not tested in massing production.

5
FS6S0765RCB

Typical Performance Characteristics

Start Up Current vs. Temp [mA] Operating Current vs. Temp


[mA]
0.150 11.0

0.125 10.5

0.100 10.0

0.075 9.5

0.050 9.0
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150
Temp Temp

Figure 1. Start Up Current vs. Temp. Figure 2. Operating Current vs. Temp.

Start Threshold Voltage vs. Temp [V] Stop Threshold Voltage vs. Temp
16.0 [V] 10.0

15.5 9.5

15.0 9.0

14.5 8.5

14.0 8.0
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150
Temp Temp

Figure 3. Start Threshold Voltage vs. Temp. Figure 4. Stop Threshold Voltage vs. Temp.

[KHz] Initial Freqency vs. Temp Maximum Duty vs. Temp


[%]
28 96.0

27
95.5
26

25 95.0

24
94.5
23

22 94.0
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150
Temp Temp

Figure 5. Initial Frequency vs. Temp. Figure 6. Maximum Duty vs. Temp.

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FS6S0765RCB

Typical Performance Characteristics (Continued)

[V]
Feedback Offset Voltage vs. Temp [mA] Feedback Source Current vs. Temp
0.45 1.1

0.40
1.0

0.35
0.9
0.30

0.8
0.25

0.20 0.7
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150
Temp Temp

Figure 7. Feedback Offset Voltage vs. Temp. Figure 8. Feedback Source Current vs. Temp.

[V] ShutDown Feedback Voltage vs. Temp


[uA] ShutDown Delay Current vs. Temp
2.4 7.60

2.2 7.55

2.0 7.50

1.8 7.45

1.6 7.40
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150
Temp Temp

Figure 9. Shutdown Delay Current vs. Temp. Figure 10. Shutdown Feedback Voltage vs. Temp.

[V] Softstart Voltage vs. Temp [V] OverVoltage Protection vs. Temp
5.02 31.0

5.01 30.5

5.00 30.0

4.99 29.5

4.98 29.0
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150
Temp Temp

Figure 11. Softstart Voltage vs. Temp. Figure 12. Over Voltage Protection vs. Temp.

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FS6S0765RCB

Typical Performance Characteristics (Continued)

[V] Burst Mode Low Voltage vs. Temp [V] Burst Mode High Voltage vs. Temp
11.2 12.2

11.1 12.1

11.0 12.0

10.9 11.9

10.8 11.8
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150
Temp Temp

Figure 13. Burst Mode Low Voltage vs. Temp. Figure 14. Burst Mode High Voltage vs. Temp.

[KHz] Burst Mode Freqency vs. Temp [V] Burst ModeEnable Voltage vs. Temp
54 1.3

1.2
52
1.1

50 1.0

0.9
48
0.8

46 0.7
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150
Temp Temp

Figure 15. Burst Mode Frequency vs. Temp. Figure 16. Burst Mode Enable Voltage vs. Temp.

[A] Burst Mode Peak Current vs.Temp [A] Over Current Limit vs.Temp
0.75
4.4
0.70
4.2
0.65

0.60 4.0

0.55 3.8

0.50
3.6
0.45
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150
Temp Temp

Figure 17. Burst Mode Peak Current vs. Temp. Figure 18. Peak Current Limit vs. Temp.

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FS6S0765RCB

Package Dimensions

TO-220-5L

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FS6S0765RCB

Package Dimensions (Continued)

TO-220-5L(Forming)

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FS6S0765RCB

Ordering Information
Product Number Package Marking Code BVdss Rds(on)
FS6S0765RCB-TU TO-220-5L 6S0765RC
650V 1.3
FS6S0765RCB-YDTU TO-220-5L(Forming) B
TU : Non Forming Type
YDTU : Forming Type

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FS6S0765RCB

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY


FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, and (c) whose failure to reasonably expected to cause the failure of the life support
perform when properly used in accordance with device or system, or to affect its safety or effectiveness.
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.

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3/20/02 0.0m 001


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 2002 Fairchild Semiconductor Corporation
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