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Φ = ∫ B ⋅ dA
B = magnetic field [T] ∫ B ⋅ ds = µ i0 enc µ0 = the permeability of free space
A = area of loop [m2] 4π×10-7 T·m/A
ienc = current encircled by the
loop[A]
A Cylindrical Changing Magnetic Field
Joseph Henry, American physicist, made improvements
dΦ
∫ E ⋅ ds = E 2π r = dt B
E = electric field [N/C] to the electromagnet.
r = radius [m] James Clerk Maxwell provided a theory showing the
t = time [s] close relationship between electric and magnetic
Φ B = BA = Bπ r 2 Φ = magnetic flux [T·m2 or phenomena and predicted that electric and magnetic
Webers]
dΦ dB fields could move through space as waves.
=A B = magnetic field [T] J. J. Thompson is credited with the discovery of the
dt dt A = area of magnetic field
electron in 1897.
[m2]
dΦ
ε = −N dB/dt = rate of change of
the magnetic field [T/s]
dt INDUCTIVE & RCL CIRCUITS
ε = potential [V]
N = number of orbits Inductance of a Coil: [H]
N = number of turns
Faraday’s Law of Induction states that the instan- NΦ
taneous emf induced in a circuit equals the rate of L= Φ = magnetic flux [T·m2]
change of magnetic flux through the circuit. Michael I I = current [A]
Faraday made fundamental discoveries in In an RL Circuit, after one time constant (τ = L/R) the
magnetism, electricity, and light. current in the circuit is 63.2% of its final value, ε/R.
∆Φ N = number of turns
ε = −N Φ = magnetic flux [T·m2] RL Circuit:
∆t t = time [s]
current rise: UB = Potential Energy [J]
I = (1 − e −t /τ L )
Lenz’s Law states that the polarity of the induced emf is V V = volts [V]
such that it produces a current whose magnetic field R = resistance [Ω]
opposes the change in magnetic flux through a circuit
R e = natural log
current decay: t = time [seconds]
Motional emf is induced when a conducting bar moves τL = inductive time constant L/R
V − t /τ L
through a perpendicular magnetic field. I= e [s]
ε = Blv B = magnetic field [T] R I = current [A]
l = length of the bar [m]
v = speed of the bar [m/s] Magnetic Energy Stored in an Inductor:
emf Induced in a Rotating Coil: U B = 12 LI 2 UB = Potential Energy [J]
L = inductance [H]
ε = NABω sin ωt N = number of turns
A = area of loop [m2]
I = current [A]
B = magnetic field [T] Electrical Energy Stored in a Capacitor: [Joules J]
ω = angular velocity [rad/s]
UE = Potential Energy [J]
t = time [s] QV CV 2 Q 2
UE = = = Q = Coulombs [C]
Self-Induced emf in a Coil due to changing current: 2 2 2C V = volts [V]
L = inductance [H] C = capacitance in farads [F]
∆I
ε = −L I = current [A]
∆t t = time [s] Resonant Frequency: : The frequency at which XL = XC.
In a series-resonant circuit, the impedance is at its
Inductance per unit length near the center of a solenoid: minimum and the current is at its maximum. For a
L = inductance [H] parallel-resonant circuit, the opposite is true.
L
= µ0 n 2 A l = length of the solenoid [m]
1 fR = Resonant Frequency [Hz]
l µ0 = the permeability of free space fR = L = inductance [H]
4π×10-7 T·m/A 2π LC C = capacitance in farads [F]
n = number of turns of wire per unit ω = angular frequency [rad/s]
1
length [#/m]
2 ω=
A = area [m ] LC
Voltage, series circuits: [V] Damped Oscillations in an RCL Series Circuit:
q
VC = V = IR VC = voltage across capacitor [V] q = Qe − Rt / 2 L cos(ω ′t + φ ) q = charge on capacitor [C]
C R q = charge on capacitor [C] Q = maximum charge [C]
fR = Resonant Frequency [Hz] where e = natural log
VX VR
= =I L = inductance [H]
ω ′ = ω 2 − ( R / 2L ) 2
R = resistance [Ω]
X R C = capacitance in farads [F] L = inductance [H]
V 2 = VR 2 + VX 2 R = resistance [Ω] ω = angular frequency of the
I = current [A] ω = 1 / LC undamped oscillations
V = supply voltage [V] [rad/s]
VX = voltage across reactance [V] When R is small and ω′ ≈ ω: ω = angular frequency of the
VR = voltage across resistor [V] damped oscillations
Q 2 − Rt / L [rad/s]
Phase Angle of a series RL or RC circuit: [degrees] U= e U = Potential Energy of the
2C
X VX φ = Phase Angle [degrees] capacitor [J]
tan φ = = C = capacitance in farads [F]
R VR X = reactance [Ω]
R = resistance [Ω] Parallel RCL Circuits:
V R
cos φ = R = V = supply voltage [V]
VX = voltage across reactance [V]
IC
V Z
(φ would be negative VR = voltage across resistor [V] IT = I R + ( IC − I L )
2 2
Z = impedance [Ω]
IR
in a capacitive circuit)
e
Susceptance (B, BL, BC): The nc
itta
reciprocal of reactance in m
Ad
siemens (S).
Admittance (Y): The reciprocal G
of impedance in siemens (S). Conductance
ELECTROMAGNETICS Poynting Vector [watts/m2]:
µ0 = the permeability of free
1 1 2 space 4π×10-7 T·m/A
WAVELENGTH S= EB = E
µ0 µ0 E = electric field [N/C or V/M]
c = speed of light 2.998 × 108 m/s B = magnetic field [T]
λ = wavelength [m] cB = E c = 2.99792 × 108 [m/s]
c = λf f = frequency [Hz]
E = electric field [N/C]
c=E/B
B = magnetic field [T] LIGHT
1Å = 10-10m Å = (angstrom) unit of wavelength
equal to 10-10 m Indices of Refraction: Quartz: 1.458
m = (meters) Glass, crown 1.52
Glass, flint 1.66
WAVELENGTH SPECTRUM Water 1.333
BAND METERS ANGSTROMS Air 1.000 293
Longwave radio 1 - 100 km 1013 - 1015 Angle of Incidence: The angle measured from the
perpendicular to the face or from the perpendicular to the
Standard Broadcast 100 - 1000 m 1012 - 1013 tangent to the face
Shortwave radio 10 - 100 m 1011 - 1012
Index of Refraction: Materials of greater density have
TV, FM 0.1 - 10 m 109 - 1011 a higher index of refraction.
Microwave 1 - 100 mm 107 - 109 c n = index of refraction
n≡ c = speed of light in a vacuum 3 × 108 m/s
Infrared light 0.8 - 1000 µm 8000 - 107 v v = speed of light in the material [m/s]
Visible light 360 - 690 nm 3600 - 6900 λ0 λ0 = wavelength of the light in a vacuum [m]
n=
violet 360 nm 3600 λn λν = its wavelength in the material [m]
blue 430 nm 4300 Law of Refraction: Snell’s Law
green 490 nm 4900 n1 sin θ1 = n2 sin θ2 n = index of refraction
yellow θ = angle of incidence
560 nm 5600 traveling to a region of traveling to a region of
orange 600 nm 6000 lesser density: θ2 > θ1 greater density:
red θ2 < θ1
690 nm 6900 θ2
Ultraviolet light refracted θ 2 refracted
10 - 390 nm 100 - 3900 n2
X-rays 5 - 10,000 pm 0.05 - 100 n1 n2
θ1 n1
Gamma rays 100 - 5000 fm 0.001 - 0.05 θ1
Cosmic rays Source
< 100 fm < 0.001
Source
2
Intensity of Electromagnetic Radiation [watts/m ]:
2
I = intensity [w/m ] Critical Angle: The maximum
n2 refracted
P Ps = power of source [watts] angle of incidence for which light
I= s2 can move from n1 to n2 n1
4π r r = distance [m] θ θ
2
4πr = surface area of sphere n2
sin θ c = for n1 > n2
n1 Source reflected
Force and Radiation Pressure on an object:
a) if the light is totally F = force [N] Sign Conventions: When M is
2 negative, the image is inverted. p is positive when the
absorbed: I = intensity [w/m ]
2 object is in front of the mirror, surface, or lens. Q is
A = area [m ]
IA I Pr = radiation pressure [N/m2] positive when the image is in front of the mirror or in back
F= Pr = c = 2.99792 × 108 [m/s] of the surface or lens. f and r are positive if the center of
c c curvature is in front of the mirror or in back of the surface
b) if the light is totally or lens.
reflected back along the Magnification by spherical mirror or thin lens. A
path:
negative m means that the image is inverted.
2 IA 2I h’ = image height [m]
F= Pr = h′ i
M= =− h = object height [m]
c c h p i = image distance [m]
p = object distance [m]
Plane Refracting Surface: Intensity: intersection.
sin α m = fringe order number [integer]
2
plane refracting surface: p = object distance I = I m (cos 2 β ) λ = wavelength of the light [m]
n1 n i = image distance [m] α
=− 2 a = width of the single-slit [m]
p i n = index of refraction πd ∆L = the difference between the
β= sin θ
λ distance traveled of the two
Lensmaker’s Equation for a thin lens in air:
πa rays [m]
1 1 1 1 1 f = focal length [m] α= sin θ I = intensity @ θ [W/m2]
= + = ( n − 1) − i = image distance [m] λ Im = intensity @ θ = 0 [W/m2]
f p i r1 r2 p = object distance [m] Single-Slit d = distance between the slits [m]
r1 = radius of surface nearest the n = index of refraction Destructive:
object[m] a sinθ = mλ
r2 = radius of surface nearest the Circular Aperture
image [m] 1st Minimum: In a circular aperture, the 1st
Virtual Image γ minimum is the point at which
sin θ = 122
.
C2 F1 F2 C1 dia. an image can no longer be
resolved.
r2 r1
A reflected ray undergoes a phase shift of 180°
p i Real Image
when the reflecting material has a greater index of
refraction n than the ambient medium. Relative to the
C2 F2 C1 same ray without phase shift, this constitutes a path
F1
difference of λ/2.