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EMCCDs

&
Digital CDS techniques

Jean – Luc GACH


Observatoire de Marseille

17 dec 2003 ESO conference 1


« L3CCD project »
Participants & Funding
z Started in mid 2002
z Active Participants:
- P. Balard (Marseille)
- O. Boissin (Marseille)
- O. Daigle (Montreal)
- J.L. Gach (Marseille)
- C. Guillaume (Haute Provence Observatory)

z Funding
- Lab funding (CNRS/UP): 31.1 k€ 35 %
- CNRS/INSU 7.7k€ in 2004 9%
- ESO 18 k€
12 k€ in 2004 33 %
- Canada (LAE) 20 k€ (30 kCAN$) 23 %
TOTAL 2004 88.8 k€

Estimated manpower cost 2002-2004: 630 k€


17 dec 2003 ESO conference 2
Talk structure
z Needs for low noise CCDs
z EMCCDs theory
z EMCCDs results
z EMCCDs controller considerations
z Digital CDS theory
z Digital CDS results

Note : EMCCD = {E2V’s L3CCD, TI’s impactron}


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EMCCDs devices
z Avalaible EMCCDs
Device MF size Pitch Speed Price
µm MHz K€
CCD65 E2V 576x288 20x30 11 10
CCD60 E2V 128x128 24 11 ???
CCD87 E2V 512x512 16 11 10
CCD97 E2V 512x512 16 11 100
TC253 TI 656x496 7.4 12.5 0.5
TX285 TI 1kx1k 8 35 5
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Needs for low noise CCDs
z Simplified classical CCD noise formula:

Usually in low selectivity instruments, noise is


dominated by photon noise (background
contribution)
In high selectivity instruments, noise is dominated
by detector noise
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Needs for low noise CCDs
z Low noise applications:
- Bright objects but short exposures
Time resolving applications (speckle, fast phenomenons…)
Wavefront sensing

- Faint objects & high selectivity


High spatial and/or spectral resolution spectroscopy

- Faint objects, high selectivity & short exposures


Scanning instruments (FP, FTS)

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Needs for low noise CCDs
z Possible solutions :
- Bright objects but short exposures
EMCCDs
- Faint objects & high selectivity
Digital CDS
EMCCDs
- Faint objects, high selectivity & short exposures
photon counting EMCCDs
3rd generation GaAs intensified Photon counting systems (IPCS)

17 dec 2003 ESO conference 7


Needs for low noise CCDs
z Examples of performance: FP observations

17 dec 2003 ESO conference 8


Needs for low noise CCDs
NGC 2403 – Integral field radial velocities

3 H obs., CFHT 3.6 m 1 H obs., OMM 1.6m


+MOSFP instrument + CIGALE instrument
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+Thin CCD (QE=90%) +GaAs IPCS (QE=25%)
EMCCDs theory
z EMCCD structure

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EMCCDs theory
z Multiplication process

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EMCCDs theory
z Per-stage multiplication probability

(from Robbins & Hadwen)


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EMCCDs theory
z Electron multiplication is a stochastic
process !
z Output probability distribution: Total gain

(from Basden & al.) Nb of input


Mean gain : electrons
Nb of stages

17 dec 2003 ESO conference


Per-stage gain 13
EMCCDs theory
z Probability distribution example with G=6650:

0,00016

0,00014
1 électron
0,00012 2 électrons
3 électrons
0,00010 4 électrons
Probabilité

0,00008
One output level will give
0,00006
several input possibilities…
0,00004

0,00002

0,00000

-0,00002
0 5000 10000 15000 20000 25000 30000
Electrons

17 dec 2003 ESO conference 14


EMCCDs theory
z The stochastic process adds noise to the classical shot
noise (convolution)
z In EMCCDs, output noise is:

z When G and N are big, F2 =2


(Excess noise factor F)2
z A high gains :

17 dec 2003 ESO conference 15


EMCCDs theory
z Excess noise factor for a 536 stage amplification register

17 dec 2003 ESO conference 16


(from Robbins & Hadwen)
EMCCDs theory
z Excess noise could also be interpreted as a QE
loss :

z Equivalent to a noiseless CCD with 50% less QE


z But QE is NOT a major issue at low fluxes (see
NGC 2403 observations presented before)

17 dec 2003 ESO conference 17


EMCCDs theory
z Generalized SNR formula:

z If G is sufficient, readout noise contribution


is ~ 0

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EMCCDs theory
z Reducing the noise factor :
- incrase g (is it possible ? See later)
- photon counting
z If output signal > threshold level, we consider that
we have one (and only one) photon in the pixel.
z And what if several photons are on the same pixel
during exposure time ?
z Solution : avoid this by a fast readout

17 dec 2003 ESO conference 19


EMCCDs theory
z Speed issues

17 dec 2003 ESO conference 20


EMCCDs theory

0,00020

0,00018
Cut level
0,00016

0,00014

0,00012

E2V CCD 65
Probabilité

0,00010

0,00008 Gain ~ 6000


0,00006 One input electron
0,00004

0,00002

0,00000
0 5000 10000 15000 20000 25000 30000
Electrons
Missed events = QE loss

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EMCCDs theory

1
0,9
0,8
0,7
0,6
0,5

0,4
RQE relatif

0,3

0,2 -
500
Seuilelectron
de 500 ecut
-
150
Seuilelectron
de 150 ecut

0,1
50 100 1000 10000 30000
Gain
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At least 5σ cut is necessary…10σ is ideal (from previous IPCS data)
EMCCDs theory
z Possible working modes for an EMCCD:
- No amplification (G=1)
the CCD is a normal CCD
- Low to medium amplification (1<G<1000)
The CCD has no readout noise but has excess noise
- High amplification (G>1000)
The CCD is used in photon counting mode.
No readout noise, no excess noise
possible non linearity at high fluxes
z It’s possible to switch between modes at any time!
17 dec 2003 ESO conference 23
L3CCD results
z Various results of amplified mode operation
in the literature
z In this talk : Photon counting results
-Photon counting is the most demanding application in sensitivity
(raises defects of detector)
- Photon counting is also speed demanding

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L3CCD results
z Photon counting image (40ms exposure, 11
Mpixels/s, EEV CCD65 @ 183K)

17 dec 2003 ESO conference 25


L3CCD results
CCD 65 @ 11Mpix/s Gain ~ 10k
293 K dark 183 K dark

Unwanted events will be reduced at lower gain, but


due to high output amplifier noise QE loss is
important

??? Dark is not dark ???


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L3CCD results
CCD 87 @ 223K 10Mpixels/s smaller gain (1k)
(lower output amplifier noise)
DARK
6311 counts

Horizontal cut

17 dec 2003 ESO conference 27


L3CCD results
CCD 87 @ 223K 10Mpixels/s

825 +/- 28 photons light


7482 counts

Horizontal cut

17 dec 2003 ESO conference 28


L3CCD results

V phase image &


storage increased by 3
volts
100 000 counts !
Horizontal cut

17 dec 2003 ESO conference 29


L3CCD results
z 2 sources of unwanted events : serial and parallel registers
z Increasing gain will increase unwanted events (serial
register spurious charge). Therefore increasing g (per
stage gain) to improve noise factor is impossible (for
the moment…)

z unwanted events in the parallel registers are generated by


clock levels (spurious charge or clock induced charge).

z Mean level can be reduced actually to 0.02


event/pixel/frame
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L3CCD results
z Confirmed by ING tests with overscan

(Courtesy of S. Tulloch)
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L3CCD results
z CIC is charge multiplication in registers !
z Due to buried channel structure and hole
migration in MPP devices
Cloc kingdark
Surface
c urrent
recombination
Impac t ionisation Al Elecholes
Moving trodeto c hannel
stop SiO2
N Si

Cloc k
Depleted buried
Charge cgenerated
hannel
elec tron
Psubstrate
P well
17 dec 2003 ESO conference 32
L3CCD results
z Need slow rise times, but short pulses (but
short pulses will also degrade CTE)

From Eastman Kodak. MPP classical CCD


17 dec 2003 ESO conference 33
L3CCD results
z To avoid CIC :
- Drive the CCD in non MPP mode
- use slow slew rate clocks but short
pulses. For HV use sine wave clock
- run the CCD as slow as possible
- Use other phase geometry (TI chips may
have different properties) especially in first
amplification stages (smaller pixels).
- Use the lowest gain possible
17 dec 2003 ESO conference 34
Controller considerations
z In most EMCCDs applications we want:
- high readout speed
- low CIC
- low readout noise (also to minimize gain &
CIC)

High speed = 10 (E2V) to 35 (TI) Mpixels/s !!

-> a classical controller won’t meet this constraints


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Controller considerations
z CCD amplifier :
need 20 to 40MHz bandwidth, low noise

C. Guillaume (Haute Provence Observatory) design gives 17 electron


noise at 40MHz bandwidth with 1800V/us slew rates

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Controller considerations
z Phases are RF signals (0 to 40 MHz). Need
coax feed & strict impedance matching or
in-house electronics.

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Controller considerations
z HV Phase design :
- sine wave drive
- 48V peak for E2V chips (less in the near future ?)
- Amplitude controlled (gain variation)
- HV phase capacitance 50 to 100pF

75 pF @ 20 MHz = 106 Ohms load


106 Ohms @ 50V peak drive = 470 mA peak drive !
470 mA @ 50V sine drive = 8.3 W @ 20 MHz (reactive
power – at driver level only)

on chip dissipation : CVf 2 =0.075W + phases resistance

17 dec 2003 ESO conference 38


Controller considerations
z Vertical phases : need slew rate control or shape
control.
z Corot design (courtesy of C.Guillaume):

z Or full digital design


17 dec 2003 ESO conference 39
Controller considerations
z ADC : 16bits impossible, 14bits @ 40MS/s, differential input.
z CDS : Digital CDS
z Sequencer : must drive sine and square waves in phase -> Direct
Digital Synthesis (DDS) design
z Interface : Hi-speed digital (RS422 or LVDS)

17 dec 2003 ESO conference 40


Controller considerations
Serial
Microcontroller Bias gen BIAS
c om.
Amplitude (gain) control
DDS RF power HV phase
Driver
Sequenc er
Driver Horizontal
Sync s
phases
Rs422
or Vertic al
LVDS Shaper Driver
phases
drive
Digital 14 bits
40 MSPS Video
CDS
A/D
Low noise
wideband (40MHz) amp
17 dec 2003 ESO conference 41
Controller considerations
z Actual status of L3CCD optimised controller @
Marseille observatory
- Amplifier validated
- HV phase & Horiz phase validated
- Sequencer validated
- Software & acquisition validated
Remains Vertical phase design (first design not
validated)

Expected fully working L3 optimised controller : 1st


quarter 2004 with CCD65, 2nd with CCD 87
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Digital CDS systems
z Developped in 1999 @ Marseille
Observatory & Haute Provence Observatory

z Actual status : prototype working

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Readout noise of a CCD+CDS system

17 dec 2003 ESO conference 44


Real time Digital filter (DSP)

17 dec 2003 ESO conference 45


Digital CDS systems
z System structure :

z Replaces straightforward an « old » analog CDS


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DARK CONDITION
Uncorrelated samples

CDS makes the mean


of the signal (1st order
filtering)

Black level These samples are


strongly correlated !
Pixel level

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Digital CDS systems

Black reference

Pixel value

Sample

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Perfect CDS noise floor

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Sample

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Digital CDS systems
z Frequency response

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Results

- One prototype working


- 1.7 electrons noise @ 50kpix/s obtained
with a « 3 electron noise » CCD (EEV 42-
20 read at 5e- with CDS)
- 100 ppm linearity (1000 ppm with CDS)

17 dec 2003 ESO conference 52


Future possible developments
– Use of lower intrinsic noise CCDs
– Use of more complex digital filters with
increase of DSP power
– Coupling with NDRO or multiple skipper amps
(Janesick, Atwood)

17 dec 2003 ESO conference 53


Thank you for your attention !

17 dec 2003 ESO conference 54

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