Anda di halaman 1dari 2

APJ ABDUL KALAM TECHNOLOGICAL UNIVERSITY

SIXTH SEMESTER B.TECH DEGREE EXAMINATION, APRIL 2018

EC 304 VLSI

PART A

Answer any two full questions. Each carries 15 marks

1 a) With diagram explain the CZ process for crystal growth. (10)

b) Define Fick’s diffusion laws. (5)

2 a) Explain the Ion implantation technique in IC fabrication with neat diagram. (10)

b) Write notes on the Deal Grove model of oxidation. (5)

3 a) Explain the fabrication steps of CMOS n-well process with the help of neat diagram. (8)

E
b) With diagram explain molecular beam epitaxy.
S . I N (7)

T U N OT
K PART B

Answer any two full questions. Each carries 15 marks

4 a) Explain the CMOS inverter transfer and current characteristics with the region of operation

in detail. (10)

b) What is a transmission gate? Draw XOR gate using transmission gate. (5)

5 a) Draw the circuit diagram, stick diagram and layout of a two input CMOS NOR gate. (9)

b) Briefly explain pass transistor logic and complementary pass transistor logic. (6)

6 a) Explain the power dissipation in CMOS. (10)

b) Implement the logic function (AB + C(A+D))′ using CMOS logic. (5)

Downloaded from Ktunotes.in


PART C

Answer any two full questions. Each carries 20 marks

7 a) Design a 4X4 NOR ROM and explain its working. (5)

b) Explain the working of 4X4 bit array multiplier. (10)

c) Explain briefly a differential voltage sense amplifier. (5)

8 a) Write notes on carry by pass adder. (5)

b) Using suitable PLA, design a 4 bit binary to gray converter. (10)

c) Write short notes on FPGA. (5)

9 a) Explain a 3 transistor dynamic memory RAM cell with circuit diagram and waveforms for

Read and write. (10)

b) Design a 14bit square root carry select adder and explain its working. (10)

E S . I N
************************

KTU NOT

Downloaded from Ktunotes.in