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IRF820S, SiHF820S

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21
VDS (V) 500 Definition
• Surface Mount
RDS(on) () VGS = 10 V 3.0
• Available in Tape and Reel
Qg (Max.) (nC) 24 • Dynamic dV/dt Rating
Qgs (nC) 3.3 • Repetitive Avalanche Rated
• Fast Switching
Qgd (nC) 13 • Ease of Paralleling
Configuration Single • Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

D2PAK (TO-263)
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
G D on-resistance in any existing surface mount package. The
S S D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
N-Channel MOSFET dissipate up to 2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF820S-GE3 SiHF820STRL-GE3a SiHF820STRR-GE3a
IRF820SPbF IRF820STRLPbFa IRF820STRRPbFa
Lead (Pb)-free
SiHF820S-E3 SiHF820STL-E3a SiHF820STR-E3a
Note
a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)


PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 2.5
Continuous Drain Current VGS at 10 V ID
TC = 100 °C 1.6 A
Pulsed Drain Currenta IDM 8.0
Linear Derating Factor 0.40
W/°C
Linear Derating Factor (PCB Mount)e 0.025
Single Pulse Avalanche Energyb EAS 210 mJ
Avalanche Currenta IAR 2.5 A
Repetitive Avalanche Energya EAR 5.0 mJ
Maximum Power Dissipation TC = 25 °C 50
PD W
Maximum Power Dissipation (PCB Mount)e TA = 25 °C 3.1
Peak Diode Recovery dV/dtc dV/dt 3.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 60 mH, Rg = 25 , IAS = 2.5 A (see fig. 12).
c. ISD  2.5 A, dI/dt  50 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply


Document Number: 91060 www.vishay.com
S11-1049-Rev. C, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820S, SiHF820S
Vishay Siliconix

THERMAL RESISTANCE RATINGS


PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Maximum Junction-to-Ambient
RthJA - 40 °C/W
(PCB Mount)a
Maximum Junction-to-Case (Drain) RthJC - 2.5
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)


PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 500 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VDS = 500 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 1.5 Ab - - 3.0 
Forward Transconductance gfs VDS = 50 V, ID = 1.5 Ab 1.5 - - S
Dynamic
Input Capacitance Ciss - 360 -
VGS = 0 V,
Output Capacitance Coss VDS = 25 V, - 92 - pF
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance Crss - 37 -
Total Gate Charge Qg - - 24
ID = 2.1 A, VDS = 400 V,
Gate-Source Charge Qgs VGS = 10 V - - 3.3 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd - - 13
Turn-On Delay Time td(on) - 8.0 -
Rise Time tr - 8.6 -
VDD = 250 V, ID = 2.1 A, ns
Turn-Off Delay Time td(off) Rg = 18 , RD = 100 , see fig. 10b - 33 -
Fall Time tf - 16 -
Between lead, D

Internal Drain Inductance LD - 4.5 -


6 mm (0.25") from
nH
package and center of G

Internal Source Inductance LS die contact - 7.5 -


S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current IS MOSFET symbol D - - 2.5


showing the
integral reverse A
G

Pulsed Diode Forward Currenta ISM p - n junction diode - - 8.0


S

Body Diode Voltage VSD TJ = 25 °C, IS = 2.5 A, VGS = 0 Vb - - 1.6 V


Body Diode Reverse Recovery Time trr - 260 520 ns
TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μsb
Body Diode Reverse Recovery Charge Qrr - 0.70 1.4 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

www.vishay.com Document Number: 91060


2 S11-1049-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820S, SiHF820S
Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VGS
Top 15 V
10 V
8.0 V
150 °C

ID, Drain Current (A)


7.0 V
ID, Drain Current (A)

6.0 V
5.5 V
5.0 V 100 25 °C
Bottom 4.5 V
100

4.5 V
10-1
20 µs Pulse Width 20 µs Pulse Width
TC = 25 °C VDS = 50 V
10-1
100 101 4 5 6 7 8 9 10

91060_01 VDS, Drain-to-Source Voltage (V) 91060_03 VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics


RDS(on), Drain-to-Source On Resistance

3.0
VGS ID = 2.1 A
Top 15 V VGS = 10 V
10 V 2.5
8.0 V
ID, Drain Current (A)

7.0 V
2.0
(Normalized)

6.0 V
100 5.5 V 4.5 V
5.0 V 1.5
Bottom 4.5 V

1.0

0.5
20 µs Pulse Width
TC = 150 °C
0.0
10-1
100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160

91060_02 VDS, Drain-to-Source Voltage (V) 91060_04 TJ, Junction Temperature (°C)

Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91060 www.vishay.com


S11-1049-Rev. C, 30-May-11 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820S, SiHF820S
Vishay Siliconix

800
VGS = 0 V, f = 1 MHz

ISD, Reverse Drain Current (A)


Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
600 Coss = Cds + Cgd
Capacitance (pF)

Ciss
400
100
150 °C
Coss 25 °C
200

Crss VGS = 0 V
0
100 101 0.4 0.6 0.8 1.0 1.2

91060_05 VDS, Drain-to-Source Voltage (V) 91060_07 VSD, Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 102
ID = 2.1 A Operation in this area limited
VGS, Gate-to-Source Voltage (V)

5
by RDS(on)
VDS = 400 V 2
16
ID, Drain Current (A)

VDS = 250 V 10 10 µs
5

12 VDS = 100 V 100 µs


2
1
1 ms
8 5

2 10 ms
0.1
4
5 TC = 25 °C
For test circuit TJ = 150 °C
2
see figure 13 Single Pulse
0 10-2
2 5 2 5 2 5 2 5 2 5
0 4 8 12 16 20 24 0.1 1 10 102 103 104

91060_06 QG, Total Gate Charge (nC) 91060_08 VDS, Drain-to-Source Voltage (V)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91060


4 S11-1049-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820S, SiHF820S
Vishay Siliconix

RD
VDS

VGS
D.U.T.
2.5 Rg
+
- VDD

2.0 10 V
ID, Drain Current (A)

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
1.5

Fig. 10a - Switching Time Test Circuit


1.0

VDS
0.5
90 %

0.0
25 50 75 100 125 150

91060_09 TC, Case Temperature (°C) 10 %


VGS
td(on) tr td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms

10
Thermal Response (ZthJC)

D = 0.5
1
0.2
0.1 PDM
0.05
0.1 0.02 t1
Single Pulse
0.01 t2
(Thermal Response)
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10

91060_11 t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91060 www.vishay.com


S11-1049-Rev. C, 30-May-11 5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820S, SiHF820S
Vishay Siliconix

L
VDS VDS
Vary tp to obtain
tp
required IAS
VDD
Rg D.U.T +
V DD
- VDS
I AS
10 V
tp 0.01 W
IAS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

500
ID
EAS, Single Pulse Energy (mJ)

Top 1.1 A
400 1.6 A
Bottom 2.5 A

300

200

100

VDD = 50 V
0
25 50 75 100 125 150

91060_12c Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 kΩ

10 V 12 V 0.2 µF
0.3 µF

QGS QGD +
VDS
D.U.T. -

VG
VGS

3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91060


6 S11-1049-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF820S, SiHF820S
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations


D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

Rg • dV/dt controlled by Rg +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor “D”
• D.U.T. - device under test

Driver gate drive


Period P.W.
D=
P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage
Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91060.

Document Number: 91060 www.vishay.com


S11-1049-Rev. C, 30-May-11 7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix

TO-263AB (HIGH VOLTAGE)


A
(Datum A)
3 4 A A B
E c2
H
4 L1 4 Gauge
plane
0° to 8° B
D 5 Detail A Seating plane
H
C C L A1
1 L3 L4
2 3
Detail “A”
L2
Rotated 90° CW
B B
scale 8:1

A
2 x b2
2xb c
E
0.010 M A M B
± 0.004 M B
2xe
Base
5 metal D1
Plating 4
b1, b3

(c) c1 5

(b, b2)
Lead tip Section B - B and C - C E1 4
Scale: none View A - A

MILLIMETERS INCHES MILLIMETERS INCHES


DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -
A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420
b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -
b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066
c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.

Document Number: 91364 www.vishay.com


Revision: 15-Sep-08 1
AN826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.420
(10.668)

(9.017)
0.355
(16.129)
0.635

0.145
(3.683)

0.135
(3.429)

0.200 0.050
(5.080) (1.257)

Recommended Minimum Pads


Dimensions in Inches/(mm)

Return to Index

Document Number: 73397 www.vishay.com


11-Apr-05 1
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy


Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12 1 Document Number: 91000