EC8252-Electronic Devices Question Bank

Unit 1- Semi Conductor Diode

2 Marks
1. Define Mass action law [May/June 2014, Nov/Dec 2016]
2. What is the principle operation of a PN junction diode in reverse bias condition[May/
June 2014]
3. Define diffusion current and drift current. [Nov/Dec 2014, May/June 2016]
4. Sketch the forward bias characteristics of the PN Junction diode. [Apr/May 2015]
5. What are the application of PN diode?[Nov/Dec 2015]
6. Define storage time. [May/June 2016]
7. What is barrier potential? [Nov/Dec 2016]
8. Find the voltage at which the reverse current in a germanium PN junction diode
attains a value of 90% of its saturation value at room temperature. [Apr/May 2017]
9. What is meant by peak inverse voltage? [Apr/May 2017]
10. State the difference between drift and diffusion current densities. [Nov/Dec 2017]
11. Why silicon is widely used than Germanium?
12. Why intrinsic semiconductor are not used in practice for manufacturing of electronic
devices?
13. Draw the energy band diagram for intrinsic and extrinsic semiconductor.
14. What is meant by Zener breakdown?
15. What is Avalanche breakdown?
16. Give the diode current equation.
17. Define Knee voltage or a cut in voltage of a diode.
18. What is meant by depletion region?
19. Define the Transition capacitance of a diode.
20. Draw the VI characteristics of a PN junction diode.
21. Define transition time.
22. Define reverse recovery time.
23. What are the application of PN diode?

16 Marks
1. Explain the theory of PN junction diode and drive its diode current equation.
(16Mark) [May/June 2014,Nov/Dec 2016, Apr/May 2017]

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EC8252-Electronic Devices Question Bank

2. Explain and drive the current components and switching characteristics of diode. (16
Mark) [May/June 2014,Nov/Dec 2014, Nov/Dec 2015, Apr/May 2017]
3. Explain the operation of PN junction under zero voltage applied bias condition and
drive the expression for built in potential barrier.(12 Mark) [Nov/Dec 2014]
4. Explain the basic structure of the PN junction. (8 Mark) [Nov/Dec 2014]
5. Derive the expression for drift current density.(12 Mark) [Apr/May 2015, Nov/Dec
2015]
6. Derive the expression for diffusion current density. (12 Mark) [Apr/May 2015,
Nov/Dec 2015]
7. Describe the deviation of V-I characteristics of pn junction diode from its ideal. (4
Mark) [Apr/May 2015]
8. Briefly explain about depletion region and barrier voltage of a PN junction. (6 Mark)
[Nov/Dec 2015]
9. With necessary diagram, describe the characteristics of a forward and reverse biased
PN junction diode.(10 Mark) [Nov/Dec 2015,May/June 2016, Nov/Dec 2016]
10. With help of space Charge width parameter, Explain the behavior of PN junction
diode when forward biased and reverse biased and drive the diode current
equation.(16 Mark) [Nov/Dec 2017]
11. Discuss the switching characteristics of PN diode with suitable application. (16 Mark)
[Nov/Dec 2017]
12. Explain in detail about the Zener breakdown and Avalanche breakdown. (8 Mark)
13. Drive the depletion region width of the PN junction diode. (10 Mark)

Problems
1. Consider a Si PN junction at T=300K with doping concentrations of Na = 1016cm-3
and Nd=1015cm-3. Assume that ni = 1.5x1010cm-3. Calculate width of the space charge
region in a PN junction, when a reverse bias voltage VR = 5V is applied.(2Mark)
[Nov/Dec 2014]
2. Consider a Si PN Junction at T=300K so that ni = 1.5x1010cm-3. The n type doping is
1x1016cm-3 and a forward bias of 0.60V is applied to the PN Junction. Calculate the
minority hole concentration at the edge of the space charge region.(2 Mark)[Apr/May
2015]

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EC8252-Electronic Devices Question Bank

3. Consider a Gallium Arsenide sample at T=300K with doping concentrations of Na =

0, and Nd=1016cm-3 and µn=8500. Calculate the drift current density if the applied
electric field is E=10 V/cm. (2 Mark) [Nov/Dec 2015]
4. Calculate the built in potential barrier in a PN junction. Consider a silicon PN junction
at 300K with doping densities Na=1x1018 cm-3 and Nd = 1x1015 cm-3. Assume ni = 1.5
x1010 cm-3. (4 Mark) [Nov/Dec 2014]
5. Determine the ideal reverse saturation current density in a silion pn junction at
T=300K. Consider the following parameter in the silicon pn junction Na= Nd =
1x1016 cm-3, ni = 1.5 x1010 cm-3, Dn=25 cm2/s, Tpo=Tno=5x10-7s, Dp=10cm2/s, εr=11.7.
Comment on result. (4 Mark) [Apr/May 2015]
6. The diode current is 0.6 mA when the applied voltage is 400 mV and 20 mA when the
applied voltage is 500 mV. Determine η. Assume kT/q=25mV. (16 Mark) [May/June
2016]
24. Calculate the built in potential barrier in a PN junction diode having following
specification: T = 300K, Na = 1018cm-3, Nd=1015cm-3 and ni = 1.5x1010cm-3 .
[Nov/Dec 2017]
7. The reverse saturation of silicon PN junction diode is 10µA. Calculate the diode
current for the forward bias voltage of 0.6V at 25oC. (6 Mark) [May/June 2016]

Unit 2-Bipolar Junction Transistor

2 Marks
1. What is the need for biasing in the transistor? [May/June 2014]
2. Draw the h parameter model for CE transistor. [May/June 2014]
3. What is the major difference between a bipolar and unipolar device? [Nov/Dec 2014]
4. What do you meant by drift current? [Apr/May 2015]
5. Sketch the Ebers Moll Model. [Apr/May 2015]
6. What is multiple emitter transistors? Draw the symbol of that. [Nov/Dec 2015]
7. Define Early effect in BJT. [Nov/Dec 2015, Apr/May 2017,Nov/Dec 2017]
8. What is meant by base width modulation? [May/June 2016]
9. Draw the common base configuration. [Nov/Dec 2016]
10. What is recovery time? Give its types. [Nov/Dec 2016]
11. State the reason behind the popularity of Common Emitter Configuration of BJT.
[Nov/Dec 2017]

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EC8252-Electronic Devices Question Bank

12. What is transistor?

13. Describe the basic structure of a BJT.
14. What are the three terminals in a BJT?
15. What are the bias condition of a base emitter and base collector junction for the
transistor to operate as an amplifier?
16. Define dc beta.
17. Define dc alpha
18. Why BJT called current controlled device?
19. State the basic currents of the transistor.
20. Describe how amplification and switching are achieved by a BJT.
21. What is meant by punch through?
22. Explain avalanche multiplication.
23. State the three operating regions of transistor.

16 Marks
1. Explain the characteristics of BJT in CC, CE, CB configuration and compare the
performance of a transistor in different configuration. (16 Mark) [May/June 2014]
2. Draw a voltage divider bias circuit and drive an expression for its stability factor. (16
Mark) [May/June 2014]
3. Define the hybrid parameter for a basic transistor circuit in CE configuration and give
its hybrid model(16 Mark) [Nov/Dec 2014,Nov/Dec 2015]
4. Write short notes on:
a. Early Effect (8 Mark) [Nov/Dec 2014,Apr/May 2015]
b. Ebers-Moll Model for BJT (8 Mark) [Nov/Dec 2014, Apr/May 2017]
5. Discuss the Input and Output characteristics of CE configuration.(10 Mark)
[Apr/May 2015, May/June 2016, Nov/Dec 2016]
6. With relevant expression and sketch, describe h-parameter model. (6 Mark)
[Apr/May 2015]
7. Describe the working of PNP junctions. (10 Mark) [Apr/May 2015]
8. Compare CB,CE and CC with respect to dc and ac parameters.(4 Mark) [Nov/Dec
2015]

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EC8252-Electronic Devices Question Bank

9. Draw the circuit diagram of an NPN junction transistor CB configuration and describe
the static input and output characteristics. Also define active, saturation and cut-off
regions. (16 Mark) [Nov/Dec 2015, Nov/Dec 2016]
10. Distinguish between h-parameter and hybrid π model.(4 Mark) [May/June 2016]
11. Derive the h parameter for the CE. [Nov/Dec 2016]
12. Derive the expression of Gummel Poon Model with neat circuit diagram. (8 Mark)
[Nov/Dec 2016]
13. What is known as current amplification factor? Derive the relationship between tha
amplification factor of CE, CB, and CC configuration.(8 Mark) [Apr/May 2017]
14. Justify transistor as an amplifier. (6 Mark) [Apr/May 2017]
15. Discuss the three different configuration of BJT along with its characteristics and also
highlights the impact of Base width Modulation (16 Mark) [Nov/Dec 2017]
16. Analyze the two different functionality of BJT with appropriate equivalent circuit
models. (16 Mark) [Nov/Dec 2017]

Problems
1. Calculate the collector and emitter current levels for a BJT with αdc = 0.99 and IB =
20µA. (2 Mark) [Nov/Dec 2014]
2. A transistor has β=150, find the collector and base current, if IE = 10 mA.(2 Mark)
[May/June 2016]
3. If a transistor has a α of 0.97, find the value of β. (2 Mark) [Apr/May 2017]
4. The reverse leakage current of the transistor when connected in CB configuration is
0.2 mA and it is 18µA when same transistor is connected in CE configuration.
Calculate αdc&βdc of the transistor.(Assume IB=30mA)(12 Mark) [May/June 2016]
5. A transistor with IB = 100µA, and IC = 2 mA find
a. β of the transistor
b. α of the transistor
c. Emitter Current IE
d. If IB changes by 25µA and IC changes by 0.6 mA. Find the new value of β. (10
Mark) [Apr/May 2017]

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EC8252-Electronic Devices Question Bank

Unit 3-Field Effect Transistors

2 Marks
1. In which region JFET acts as a resistor why? [May/June 2014]
2. Differentiate between JFET and BJT. [May/June 2014, Apr/May 2017,Nov/Dec
2017]
3. Define Pinch-off voltage. [Nov/Dec 2014]
4. Draw the symbol for DUAL GATE MOSFET. [Nov/Dec 2014]
5. Assume that the P+N junction of a uniformly doped silicon n channel JFET at
T=300K has doping concentration of Na = 1018cm-3 and Nd = 1016cm-3. Assume that
the metallurgical channel thickness α is 0.7µm. Calculate the pinch off voltage.
[Apr/May 2015,Nov/Dec 2015]
6. What is channel length modulation. [Apr/May 2015]
7. Draw the symbol of FINFET and Dual gate MOSFET. [Nov/Dec 2015]
8. Compare MOSFET & FET. [May/June 2016]
9. Give some application of JFET. [May/June 2016]
10. What is metal semiconductor contact? [Nov/Dec 2016]
11. What is JFET and give its different modes of operation? [Nov/Dec 2016]
12. Give the current voltage relationship of the D-MOSFET and E-MOSFET. [Apr/May
2017]
13. Calculate the Pinchoff voltage of an n-channel JFET having following specification T
= 300K, Na = 1018cm-3, Nd=1016cm-3 and metallurgical channel thickness a=0.75µm.
[Nov/Dec 2017]
14. Sate the significance of MOSFET devices. [Nov/Dec 2017]
15. Why is FET called a unipolar device?
16. What are the advantage of FETs?
17. Define amplification factor.
18. Define transconductance(gm)
19. Write Schockley’s equation.
20. What are the different types of MOSFET?
21. What are the application of JFET?
22. What are the application of MOSFET?
23. What are the parameters of JFET?
24. Give the current voltage relationship of the D-MOSFET and E-MOSFET.

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EC8252-Electronic Devices Question Bank

16 Marks
1. Discuss about FINFET and Dual Gate MOSFET.(8 Mark) [May/June 2014,Apr/May
2015, May/June 2016, Nov/Dec 2016]
2. Explain the four distinct regions of the output characteristics of the JFET.(8 Mark)
[May/June 2014]
3. With the help of suitable diagrams explain the working of different types of
MOSFET.(10 Mark) [May/June 2014]
4. Briefly describe some application of JFET.(6 mark) [May/June 2014]
5. Draw the circuit diagram for obtaining the drain and transfer characteristics for an N
channel JFET.(16 Mark) [Nov/Dec 2014, Apr/May 2015, Nov/Dec 2016]
6. Draw the circuit diagram for cross section of an Enhancemnet MOSFET. Also discuss
the Drain and transfer characteristics for EMOSFET. (16 Mark) [Nov/Dec 2014]
7. Discuss the characteristics of MOSFET.(10 Mark) [Apr/May 2015]
8. Explain the concept of Threshold voltage in a MOSFET.(6 Mark) [Apr/May 2015]
9. Draw the circuit diagram for obtaining the drain and transfer characteristics for an P
channel JFET.(16 Mark) [Nov/Dec 2015]
10. With neat diagram explain the operation of Depletion mode MOSFET and sketch the
characteristics curves. (16 Mark) [Nov/Dec 2015, May/June 2016]
11. Derive an expression for drain current of FET in Pinch off region with necessary
diagram (16 Mark) [May/June 2016]
12. Describe the working and characteristics of MOSFET, D MOSFET and E MOSFET.
(16 Mark) [Nov/Dec 2016]
13. Explain the construction and operation of N-channel JFET with suitable diagram. (16
Mark) [Apr/May 2017]
14. Discuss the effect of channel length modulation. [Apr/May 2017]
15. What is known as metal oxide semiconductor field effect transistor? Explain its
principles of operation in enhancement mode with suitable diagram. (10 Mark)
[Apr/May 2017]
16. “ Field Effect Transistor is a Voltage controlled current device” Justify the statement
by describing the characteristics of the device involving the impact various
parameters such as pinch off voltage, source drain voltage and gate source voltage.
(16 Mar) [Nov/Dec 2017]

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EC8252-Electronic Devices Question Bank

17. With relevant sketches, explain the working mechanisms of enhancement and
depletion MOSFET (16 Mark) [Nov/Dec 2017]

Unit 4-Special Semiconductor Devices

2 Mark
1. Draw the energy band diagram of metal and semiconductor before and after
conduction is made. [May/June 2014,May/June 2016]
2. List out the application of tunnel diode. [May/June 2014]
3. What are the difference between a Tunnel diode and an ordinary PN junction diode.
[Nov/Dec 2014, Nov/Dec 2015]
4. Mention the analog and digital application of LDR. [Nov/Dec 2014]
5. What is a MESFET? [Apr/May 2015]
6. Expand: LASER, LDR. [Apr/May 2015]
7. Mention the application of varactor diode. [Nov/Dec 2015, Apr/May 2017]
8. What is the basic principles behind the LDR.? [Nov/Dec 2015]
9. Mention some advantage and disadvantage of Tunnel diode. [May/June 2016]
10. What is tunneling phenomenon? [Nov/Dec 2016]
11. Compare between schottky diode and conventional diode. [Nov/Dec 2016]
12. Define Gunn Effect. [Apr/May 2017]
13. Define Snell’s Law. [Nov/Dec 2017]
14. What are the application of tunnel diode?
15. Draw the characteristics of Tunnel diode.
16. Explain how reverse biased pn junction exhibits a capacitor?
17. Discuss how the capacitance varies with reverse bias voltage.
18. What are the application of Tunnel diode?
19. Define electron affinity.

16 Mark
1. Draw the VI characteristics of zener diode and explain its operation. And also brief
how it can be used as a regulator.(8 Mark) [May/June 2014, Nov/Dec 2015, Nov/Dec
2016, Apr/May 2017]
2. Write short notes on Schottky diode.(8 Mark) [May/June 2014]

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EC8252-Electronic Devices Question Bank

3. Explain the principle behind the varactor diode and list out its application.(8 Mark)
[May/June 2014, Apr/May 2015]
4. Give the details about LASER diode. (8 Mark) [May/June 2014, May/June 2016,
Nov/Dec 2016]
5. Explain the V-I characteristics of Zener diode and distinguish between Avalanche and
Zener Break downs. (16 Mark) [Nov/Dec 2014]
6. Explain the principles and operation of Varactor diode (16 Mark) [Nov/Dec 2014,
May/June 2016]
7. Write short notes on Tunnel Diode. (8 Mark) [Apr/May 2015]
8. Describe the working of metal semiconductor junction(12 Mark) [Apr/May 2015]
9. Consider an n-channel GaAs MESFET at T= 300K with a gold schottky barrier
contact. Assume the barrier height is ɸBn=0.89V. The n-channel doping is
Nd=2x1015cm-3. Determine the channel thickness such that VT = +0.25V. Also
Nc=4.7x1017cm-3 and εr of GaAs = 13.1. (4 Mark) [Apr/May 2015]
10. Sketch the basic construction and characteristics for a scottky diode. Briefly explain
the devices operation. (8 Mark) [Nov/Dec 2015]
11. Explain the operation of Tunnel diode and its characteristics with structural
diagram.(14 Mark) [Nov/Dec 2015, May/June 2016]
12. Explain the construction and volt ampere characteristics of tunnel diode. (8 Mark)
[Nov/Dec 2016]
13. Describe the VI Characteristics of LDR. (8 Mark) [Nov/Dec 2016]
14. Draw the V-I characteristics of Schottky diode and explain its operation. (16 Mark)
[Apr/May 2017]
15. Narrate your understanding on various two terminal devices such as Schottky Barrier
diode, Zener Diode, Tunnel Diode and Varactor Diode. (16 Mark) [Nov/Dec 2017]
16. With relevant sketches, explain the working mechanisms of Gallium Arsenic Devices
and LDR. (16 Mark) [Nov/Dec 2017]

Unit 5-Power Devices and Display Devices

2 Mark
1. Draw the basic structure of TRIAC and its symbol. [May/June 2014]
2. Write down the significance of Opto coupler. [May/June 2014]
3. Draw the two transistor equivalent circuit of an SCR. [Nov/Dec 2014]

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EC8252-Electronic Devices Question Bank

4. Sketch the graph symbol for n-channel and p-channel MOSFET. [Nov/Dec 2014]
5. Sketch the V-I characteristics of an UJT. [Apr/May 2015]
6. “A Solar cell is a PN junction device with no voltage directly applied across the
junction”. If it is so, how does a solar cell deliver power to a load? [Apr/May 2015]
7. What is the name implies VMOS? [Nov/Dec 2015]
8. Draw the circuit diagram of opto coupler. [Nov/Dec 2015]
9. What is meant by regenerative action of SCR? [May/June 2016]
10. Mention some advantage and disadvantage of LCD. [May/June 2016]
11. Give the symbol, structure and equivalent circuit of DIAC. [Nov/Dec 2016]
12. Compare SCR with TRIAC. [Nov/Dec 2016]
13. Draw the basic structure of DIAC and its symbol. [Apr/May 2017]
14. Define holding current. [Apr/May 2017]
15. State the difference between DIAC and TRIAC. [Nov/Dec 2017]
16. Define conversion efficiency of solar cell. [Nov/Dec 2017]
17. What is LED? Which material is used for LED?
18. Draw the characteristics of SCR.
19. State any four specification of SCR.
20. Draw the equivalent circuit of UJT.
21. What is interbase resistance of UJT?
22. Define intrinsic stand off ratio for UJT.
23. State the application of DIAC.
24. State the application CCD.
25. State the application of photo transistor.
26. What is photoconductive cell?
27. What is application of photovoltaic cell.
28. What is application of photoconductive cell?
29. What is photovoltaic cell?
30. Write down the significance of opto coupler.

16 Mark
1. Explain the operation, characteristics and application of SCR. (16 Mark) [May/June
2014, Nov/Dec 2015, Nov/Dec 2016, Apr/May 2017]
2. Write short notes on

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EC8252-Electronic Devices Question Bank

a. Solar Cell (8 Mark) [May/June 2014, Nov/Dec 2014&2017]

b. CCD (8 Mark) [May/June 2014, Apr/May 2015, Nov/Dec
2015,2017]
c. Photo transistor (5 Mark) [Nov/Dec 2014, Nov/Dec 2016&2017]
d. Opto couplers (5 Mark) [Nov/Dec 2014&2017, Apr/May 2017]
e. LCD (8 Mark) [Apr/May 2015,Nov/Dec 2015, Nov/Dec
2016, Apr/May 2017]
f. Power BJT (8 Mark) [Apr/May 2015]
g. Power MOSFET (8 Mark) [Apr/May 2015]
3. Give the construction details of UJT & explain its operation with the help of
equivalent circuits. [Nov/Dec 2014]
4. Explain how a UJT functions as Relaxation Oscillator. (8 Mark) [Nov/Dec 2015]
5. Draw the basic structure of UJT and explain V-I characteristics of UJT using
equivalent circuit. (16 Mark) [May/June 2016]
6. Draw the V-I characteristics of
a. DIAC (8 Mark) [May/June 2016]
b. TRIAC (8 Mark) [May/June 2016]
and explain its operation.
7. Explain the working and characteristics of DMOS.(6 Mark) [Nov/Dec 2016]
8. Discuss characteristics of Silicon Controlled Rectifier, also with neat circuit explain
how it can used as battery charging regulator and temperature controller. (16 Mark)
[Nov/Dec 2017]

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