DOI:10.1111/ijag.12016
Jingkai Yang
College of Materials Science and Engineering, Yanshan University, Qinhuangdao 066004,
People’s Republic of China
Fluorine-doped tin oxide (FTO) films were deposited on float glass to create low-emissivity glass (low-E glass) by atmo-
spheric pressure chemical vapor deposition (APCVD). Heat treatments were carried out to assess its antioxidant properties.
The surface morphology, crystal structure, and the oxygen and tin concentrations in the FTO films were investigated by scan-
ning electron microscope (SEM), X-ray diffraction (XRD), Auger electron spectrometer (AES), and X-ray photoelectron spec-
troscopy (XPS), respectively. The results indicated that the electrical properties determined by the four-point probe method
remained constant up to 600°C with increasing temperature. The FTO films exhibited nonstoichiometry with a ratio of
[O]/[Sn] >2 on the top surface and <2 in the film. The sheet resistance of the film strongly depended on the oxygen concen-
tration on the film surface. When the heating temperature reached 700°C, the sheet resistance increased rapidly from 9.4 to
86.7 Ω/□ with a concomitant increase in the oxygen concentration on the top surface.
*zhaohongli@ysu.edu.cn
© 2013 The American Ceramic Society and Wiley Periodicals, Inc
www.ceramics.org/IJAGS Oxygen Distribution of FTO Films 243
Fig. 2. Scanning electron microscopy micrographs of FTO films thermally annealed at different temperatures.
deep layer of the film changes little. The [O]/[Sn] atom ratio in the near surface increases only slightly after heat
ratios calculated from the XPS data confirm that the tin treatment and remains unchanged for etching times up
oxide in the film is in a nonstoichiometric state (Table I) to 490 s. The change in the oxygen content in the film
and should be described as SnOx, where x is below 2 in subjected to a higher temperature is very similar to the
the deep layer and above 2 in the top surface. The [O]/ steep rise exhibited by the electrical properties (Fig. 3).
[Sn] ratios increase sharply to 5.29 after heat treatment This feature hints that the sheet resistance of film
from 2.28 for the as-deposited sample. However, the depends strongly on the surface oxygen concentration.
246 International Journal of Applied Glass Science—Zhao, et al. Vol. 4, No. 3, 2013
It has been proposed that the adsorbed oxygen sheet resistance of the film depends strongly on the
transitions into various oxygen anionic species, transfer- oxygen concentration on the top surface.
ring an electron from SnO2 to the chemisorbed oxygen
according the following processes1:
Acknowledgments
O2 ðgasÞ $ O2 ðadÞ $ O2
2 ðadÞ $ O ðadÞ
$ O2 ðadÞ $ O2 ðlatticeÞ The work was supported by the National Natural
Science Foundation of China under grant No.
The conductivity decreases with increasing temper- 50972126 and by the Group of Electrochemical Engi-
ature, which can be interpreted in terms of the conver- neering, EPFL, Lausanne, Switzerland.
sion of chemisorbed O 2 into O (O2) and thus
additional acceptance of electrons from the tin oxide by References
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