In the name of God 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

• Electronics I
• Lecture 13

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 Course Overview 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

• Semiconductor physics
• PN junction
– Physics
– dc analysis
– ac analysis
– applications
• BJT
– BJT physics
– dc analysis
• BJT Model
– ac analysis
• Single/Multiple stage Amplifiers
• MOSFET
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 Bipolar DC Analysis 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

• “dc analysis” or “bias analysis” :

• this step determines:
– The region of operation (active or saturation)
– (IE , IC , IB ) and VCE

 IC Q
Q po int : 
VCE Q

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 Problem-Solving Technique: Bipolar DC 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

Analysis
• 1. Assume that the transistor is biased in the forward-active
mode in which case VBE = VBE (on), IB > 0, and IC = βIB .
• 2. Analyze the “linear” circuit with this assumption.
• 3. Evaluate the resulting state of the transistor. If the initial
assumption is “active mode” , and for NPN transistor VCE >
VCE sat is true(for PNP transistor, VEC > VEC sat ), then the
initial assumption is correct. However, if the calculation
shows IB < 0, then the transistor is probably “cut off”, and if
the calculation shows for NPN transistor VCE < VCE sat(for
PNP transistor, VEC < VEC sat ), the transistor is likely biased
in “saturation”.
• 4. If the initial assumption is proven incorrect, then a new
assumption must be made and the new “linear” circuit must be
analyzed. Step 3 must then be repeated. 4
Example 1: PNP Transistor 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

• β=10
• VEB ON=0.8 V
• VEC sat=0.2 V

• IC :?
• IB :?
• VEC :?
Ic=5 mA

VEC=5 V

• If RC=3 KΩ ; IC , IB , VEC :? b) VEC=0.2 V

b) Ic=3.3 mA 5
Example 2: NPN Transistor 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

• β=100
• RC=0.5 KΩ
• VBE ON=0.8 V
• VCE sat=0.2 V

• IC :?
• IB :?
Ic=4 mA
• VCE :?
VCE=3 V

• If RC=2 KΩ ; IC , IB ,VCE :? b) VCE=0.2 V

b) Ic=2.4 mA 6
 Example 3: Biasing with Base Resistor 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

• β=100
• RC=0.5 KΩ
• RB=100 KΩ
• VCC=2.8 V
• VBE ON=0.8 V
• VCE sat=0.2 V

VCC VBE VCC VBE • IC ,IB ,VCE :?

IB  , IC  
RB RB
• Assuming a constant value for VBE, one can solve for both
IB and IC and determine the terminal voltages of the
transistor.
• However, bias point is sensitive to  variations. 7
 Example 4: Resistive Divider 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

• Using resistor divider to set VBE, it is possible to produce

an IC that is relatively independent of  if base current is
small.
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 Emitter Degeneration Biasing 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

RTh
RE 
VTh VBE  1
IE 
RTh
RE  Usually in design:
 1 RTh
RE 10
 1

• This bias technique is less sensitive to  and VBE variations.

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 Self-Biasing Technique 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

VCC VBE
IE 
RB
RC 
 1

• This bias technique utilizes the collector voltage to provide

the necessary Vx and IB.
• One important characteristic of this technique is that
collector has a higher potential than the base, thus
guaranteeing active operation of the transistor. 10
 Self-Biasing Design Guidelines 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

RB
(1) RC  
(2) VBE  VCC  VBE

(1) provides insensitivity to  . 

(2) provides insensitivity to variation in VBE . 
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Summary of Biasing Techniques 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

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 PNP Biasing Techniques 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

• Same principles that apply to NPN biasing also apply to

PNP biasing with only polarity modifications.
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 Example: 2 Stage Transistor 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

20 V
• β→∞
10 KΩ 9.3 KΩ • VBE ON=0.7 V
• VCE sat=0.2 V
Q2 • IC1, IC2=?

Q1
10 KΩ

9.3 KΩ 10 KΩ • If β=100 :
• IC1, IC2=?
-10 V
a) Ic1 =1 mA, Ic 2=1 µA, VCE 1=10.7 V=VCE 2
b) Ic1 =0.98 mA, Ib1=9.8 µA, Ie1 =0.99 mA
b) Ic2 =0.96 mA, Ib2=9.6 µA, Ie2 =0.97 mA 14
 Course Overview 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

• Semiconductor physics
• PN junction
• BJT
– BJT physics
– dc analysis
• Forward active region
• Saturation region
• Cutoff region
– ac/dc load lines
• BJT Model
– Small signal analysis
• Single/Multiple stage Amplifiers
• MOSFET
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 Cutoff Region 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

• Cutoff represents the off mode in switching applications. :open switch (one of the
two states requires for binary logic circuits.)
Base-Emitter Collector-Base Transistor
IC   I E  I CBO Mode
FB RB Forward
IC   I B  (   1 ) I CBO active
FB FB Saturation

RB RB Cutoff

• For Silicon transistor and around T

room temperature we have:

I CBO (T 2 )  I CBO (T 1)  2 10
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 Example: off mode 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

VCC= -15 V

RC=1 KΩ
• In 25oC: ICBO= 1µA
• (a) VBB =? to have Q:off in 25oC
Q • (b) VBB =? to have Q:off in 85oC
RB=100 KΩ
VBB • (a) VBB ≥ 0.1 V

• (b) VBB ≥ 6.4 V

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 Example: Variable β 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

• 100<β<200
RC=1 KΩ • VBE ON=0.8 V
• VCE sat=0.2 V
• ICBO= 0.1µA

VBB • Q: sat, min IB :?

RB=100 KΩ • Q: off, max VBB :?

• Ic min(sat) =4.8 mA, Ic min (sat)=48 µA

• Q: cutoff → VBE (cutoff)=0 → VBB ≤ -10 mV

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 Breakdown Voltage 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

• The value of BVCEO is less than the value of BVCBO because BVCEO includes the
effects of the transistor action, while BVCBO does not.

where n is an empirical constant usually in the range of 3 to 6.

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 Course Overview 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

• Semiconductor physics
• PN junction
• BJT
– BJT physics
– dc analysis
– Ac/dc load lines
• BJT Model
– Small signal analysis
• Single/Multiple stage Amplifiers
• MOSFET

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DC /AC Load Line 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

AC signal: Vin (large signal)

Vin → Vout :?

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 Load Line and Modes of Operation 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

• VBE(on) = 0.7 V
• β = 200

• DC Load line: V CC  R C IC  V CE

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 Q-points for Different IB 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

• DC Load line: V CC  R C IC  V CE
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 Q-points for Different RC 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

• DC Load line: V CC  R C IC  V CE
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 Swing 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

Vin → ∆Ic :? , ∆VCE :?

• iC = IC (dc) + ic (ac)
• VCC= VCE +RC iC +RE iE ≈ VCE + iC (RC+RE)
• → VCE = VCC - (RC+RE) iC
= VCC - (RC+RE) IC (dc) + (- (RC+RE) ic (ac))
= VCE (dc) + VCE (ac)

• VCE (dc) = VCC - (RC+RE) IC (dc) :DC Load line

• VCE (ac) = - (RC+RE) ic (ac) :AC Load line

• VCE -VCE Q = - (RC+RE)( ic –ICQ)

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 DC /AC Load Line 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

• DC : • AC :

• DC Load line: • AC Load line:

• VCE (ac) = - (RC+RE) ic (ac)
• VCE (dc) = VCC - (RC+RE) IC (dc)

• In this case, DC and AC Load lines have equal slope. 26

 DC /AC Load Line 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

DC : AC :

• DC Load line: • AC Load line:

• VCE (dc) = VCC - (RC+RE) IC (dc) VCE (ac) = - (RC+RE||RL) ic (ac)
VCE -VCE Q = - (RC+RE||RL)( ic –IC Q)
IC Q
Q
VCE Q Q point 
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 DC /AC Load Line 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

Bypass Capacitance RE2

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DC /AC Load Line 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

AC signal: Vin (large signal)

Vin → VCE :? → Vout :?

DC solution: AC solution:
DC load line Swing
Q point AC value
DC value

Complete solution=
:AC Load line
DC value + AC value
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 Maximum Swing 1 ‫اﻟﻜﺘﺮوﻧﻴﻚ‬

IC

• ∆1=VCE Q-VCE sat

• ∆2=Rac IC Q
• VCC= VCE Q +Rdc IC Q
Q • Max symmetric
IC Q
swing=min (∆1,∆2)

VCE
VCE sat VCE Q • To have Max
symmetric swing→
∆1 ∆2 ∆1=∆2
VCC VCE(sat)
 ICQ 
Rac  Rdc
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