1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
1.2 Features
■ Logic level compatible ■ Very low on-state resistance
1.3 Applications
■ DC to DC converters ■ Switched mode power supplies
2. Pinning information
Table 1: Pinning - SOT78, SOT404, SOT428, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb mb mb d
2 drain (d) [1]
3 source (s)
g
mb mounting base,
connected to MBB076 s
drain (d) 2
2 1 3
1 3 MBK116 Top view MBK091
MBK106
1 2 3
[1] It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages.
Philips Semiconductors PHP/PHB/PHD108NQ03LT
TrenchMOS™ logic level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 °C ≤ Tj ≤ 175 oC - 25 V
VDGR drain-gate voltage (DC) 25 °C ≤ Tj ≤ 175 oC; RGS = 20 kΩ - 25 V
ID drain current (DC) Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 - 75 A
Tmb = 100 °C; VGS = 5 V; Figure 2 and 3 - 60 A
VGS gate-source voltage - ±20 V
IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 108 A
Ptot total power dissipation Tmb = 25 °C; Figure 1 - 180 W
Tstg storage temperature −55 +175 °C
Tj junction temperature −55 +175 °C
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 °C - 75 A
ISM peak source (diode forward) current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 108 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source unclamped inductive load; ID = 43 A; - 180 mJ
avalanche energy tp = 0.25 ms; VDD ≤ 15 V; RGS = 50 Ω;
VGS = 10 V; starting Tj = 25 °C
9397 750 10159 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
03aa16
120 03aa24
120
Pder Ider
(%) (%)
80
80
40
40
0
0
0 50 100 150 200
Tmb (°C) 0 50 100 150 200
Tmb (°C)
P tot VGS ≥ 5 V
P der = ----------------------- × 100%
P ID
°
tot ( 25 C ) I der = ------------------- × 100%
I °
D ( 25 C )
Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a
function of mounting base temperature. function of mounting base temperature.
003aaa190
103
ID
Limit RDSon = VDS / ID
(A)
tp = 10 µs
102
100 µs
DC
1 ms
10 10 ms
1
1 10 102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 10159 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
4. Thermal characteristics
Table 3: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance from junction to mounting base Figure 4 - - 0.8 K/W
Rth(j-a) thermal resistance from junction to ambient
SOT78 vertical in still air - 60 - K/W
SOT428 SOT428 minimum footprint; - 75 - K/W
mounted on a PCB
SOT404 and SOT428 SOT404 minimum footprint; - 50 - K/W
mounted on a PCB
003aaa191
1
Zth(j-mb)
(K/W)
δ = 0.5
0.2
0.1
10-1
0.05
0.02
tp
single pulse P δ=
T
tp t
T
10-2
10-5 10-4 10-3 10-2 10-1 1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 10159 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V
Tj = 25 °C 25 - - V
Tj = −55 °C 22 - - V
VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 1 - 2 V
IDSS drain-source leakage current VDS = 25 V; VGS = 0 V
Tj = 25 °C - 0.05 1 µA
Tj = 175 °C - - 500 µA
IGSS gate-source leakage current VGS = ±10 V; VDS = 0 V - 0.02 100 nA
RDSon drain-source on-state resistance VGS = 5 V; ID = 25 A; Figure 7 and 8
Tj = 25 °C - 6.2 7.5 mΩ
Tj = 175 °C - 10 14 mΩ
VGS = 10 V; ID = 25 A - 5.1 6.0 mΩ
Dynamic characteristics
Qg(tot) total gate charge ID = 40 A; VDD = 15 V; VGS = 5 V; Figure 13 - 23 - nC
Qgs gate-source charge - 8.4 - nC
Qgd gate-drain (Miller) charge - 7.3 9.9 nC
Ciss input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11 - 1990 - pF
Coss output capacitance - 580 - pF
Crss reverse transfer capacitance - 230 - pF
td(on) turn-on delay time VDD = 15 V; RD = 0.6 Ω; VGS = 5 V; RG = 10 Ω - 24 - ns
tr rise time - 102 - ns
td(off) turn-off delay time - 53 - ns
tf fall time - 54 - ns
Source-drain diode
VSD source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12 - 0.9 1.2 V
trr reverse recovery time IS = 20 A; dIS/dt = −100 A/µs; VGS = 0 V; - 34 - ns
Qr recovered charge VDS = 25 V - 27 - nC
9397 750 10159 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
003aaa192 003aaa193
40 40
10 V
ID VDS > ID x RDSon
ID 5V
(A) 4V (A)
3.5 V
30 30
3V
20 20
2.8 V
10 10
2.6 V
Tj = 175 °C 25 °C
2.4 V
2.2 V
0 0
0 0.5 1 1.5 2 1 2 3 4
VDS (V) VGS (V)
003aaa194
0.1 03aa27
2.6 V 2
RDSon VGS = 2.8 V
(Ω) a
0.08
1.5
0.06
1
0.04
3V 0.5
0.02
3.5 V
5V
10 V
0
0
0 5 10 15 20
ID (A) -60 0 60 120 180
Tj (°C)
Tj = 25 °C R DSon
a = -----------------------------
-
R DSon ( 25°C )
Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain source on-state resistance
of drain current; typical values. factor as a function of junction temperature.
9397 750 10159 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
03aa33 03aa36
2.5 10-1
VGS(th) ID
(V) (A)
2 max 10-2
1 min 10-4
0.5 10-5
0 10-6
-60 0 60 120 180 0 1 2 3
Tj (°C) VGS (V)
003aaa195 003aaa196
104 20
IS
C (A)
(pF) 15
Ciss
103 10
Coss
5
Crss 175 °C Tj = 25 °C
102 0
10-1 1 10 102 0.2 0.4 0.6 0.8 1
VDS (V) VSD (V)
9397 750 10159 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
003aaa197
10
VGS
(V)
8
0
0 10 20 30 40
QG (nC)
ID = 40 A; VDD = 15 V
Fig 13. Gate-source voltage as a function of gate charge; typical values.
9397 750 10159 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
6. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
E A
p A1
q mounting
D1 base
L1(1) L2
Q
b1
L
1 2 3
b c
e e
0 5 10 mm
scale
mm 4.5 1.39 0.9 1.3 0.7 15.8 6.4 10.3 15.0 3.30 3.8 3.0 2.6
2.54 3.0
4.1 1.27 0.7 1.0 0.4 15.2 5.9 9.7 13.5 2.79 3.6 2.7 2.2
Note
1. Terminals in this zone are not tinned.
00-09-07
SOT78 3-lead TO-220AB SC-46
01-02-16
9397 750 10159 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
E A1
D1 mounting
base
HD
Lp
1 3
b c
e e Q
0 2.5 5 mm
scale
mm 4.50 1.40 0.85 0.64 11 1.60 10.30 2.54 2.90 15.80 2.60
4.10 1.27 0.60 0.46 1.20 9.70 2.10 14.80 2.20
99-06-25
SOT404
01-02-12
9397 750 10159 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
seating plane
y
A
E A A2
b2 A1 E1
mounting
base
D1
D
HE
L2
2
L1
L
1 3
b1 b w M A c
e
e1
0 10 20 mm
scale
mm 2.38 0.65 0.93 0.89 1.1 5.46 0.4 6.22 6.73 4.81 2.285 4.57 10.4 2.95 0.9
4.0 0.5 0.2 0.2
2.22 0.45 0.73 0.71 0.9 5.26 0.2 5.98 6.47 4.45 9.6 2.55 0.5
Note
1. Measured from heatsink back to lead.
99-09-13
SOT428 TO-252 SC-63
01-12-11
9397 750 10159 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
7. Revision history
9397 750 10159 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
11. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. Fax: +31 40 27 24825
9397 750 10159 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
4 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
4.1 Transient thermal impedance . . . . . . . . . . . . . . 4
5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
8 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13