TMT2N60ZG

Features N-channel MOSFET

 Low gate charge BVDSS ID RDS(on
 100% avalanche tested
600V 2A < 4.0W
 Improved dv/dt capability
 RoHS compliant
 Halogen free package
 JEDEC Qualification
 ESD improved performance

S
D
G

Device Package Marking Remark

TMT2N60ZG SOT-223 TMT2N60ZG Halogen Free

Absolute Maximum Ratings

Parameter Symbol TMT2N60ZG Unit
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGS ±30 V
TC = 25 ℃ 2 A
Continuous Drain Current ID
TC = 100 ℃ 1.4 A
Pulsed Drain Current (Note 1) IDM 8 A
Single Pulse Avalanche Energy (Note 2) EAS 128 mJ
Repetitive Avalanche Current (Note 1) IAR 2 A
Repetitive Avalanche Energy (Note 1) EAR 5.2 mJ
TC = 25 ℃ 52 W
Power Dissipation PD
Derate above 25 ℃ 0.416 W/℃
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
Operating Junction and Storage Temperature Range TJ, TSTG -55~150 ℃
Maximum lead temperature for soldering purposes,
TL 300 ℃
1/8” from case for 5 seconds
* Limited only by maximum junction temperature

Thermal Characteristics
Parameter Symbol TMT2N60ZG Unit
Maximum Thermal resistance, Junction-to-Ambient RqJA 62.5 ℃/W

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Electrical Characteristics : TC=25℃, unless otherwise noted

Parameter Symbol Test condition Min Typ Max Units

OFF
Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 600 -- -- V
VDS = 600 V, VGS = 0 V -- -- 1 µA
Zero Gate Voltage Drain Current IDSS
VDS = 480 V, TC = 125°C -- -- 10 µA
Forward Gate-Source Leakage Current IGSSF VGS = 30 V, VDS = 0 V -- -- 100 µA
Reverse Gate-Source Leakage Current IGSSR VGS = -30 V, VDS = 0 V -- -- -100 µA

ON
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2 -- 4 V
Drain-Source On-Resistance RDS(on) VGS = 10 V, ID = 1.0 A -- 3.2 4.0 W
(Note 4)
Forward Transconductance gFS VDS = 30 V, ID = 1.0 A -- 5 -- S

DYNAMIC
Input Capacitance Ciss VDS = 25 V, VGS = 0 V, -- 400 -- pF
Output Capacitance Coss f = 1.0 MHz -- 41 -- pF
Reverse Transfer Capacitance Crss -- 7.5 -- pF

SWITCHING
Turn-On Delay Time (Note 4,5) td(on) VDD = 300 V, ID = 2.0 A, -- 13 -- ns
(Note 4,5)
Turn-On Rise Time tr RG = 25 Ω -- 18 -- ns
(Note 4,5)
Turn-Off Delay Time td(off) -- 46 -- ns
Turn-Off Fall Time (Note 4,5) tf -- 20 -- ns
(Note 4,5)
Total Gate Charge Qg VDS = 480V, ID = 2.0 A, -- 9.6 -- nC
(Note 4,5)
Gate-Source Charge Qgs VGS = 10 V -- 1.6 -- nC
(Note 4,5)
Gate-Drain Charge Qgd -- 4.3 -- nC

SOURCE DRAIN DIODE

Maximum Continuous Drain-Source
IS ---- -- -- 2 A
Diode Forward Current
Maximum Pulsed Drain-Source
ISM ---- -- -- 8 A
Diode Forward Current
Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 2.0 A -- -- 1.5 V
(Note 4)
Reverse Recovery Time trr VGS = 0 V, IS = 2.0 A -- 241 -- ns
(Note 4)
Reverse Recovery Charge Qrr dIF / dt = 100 A/µs -- 0.8 -- µC

Note :
1. Repetitive rating : Pulse width limited by maximum junction temperature
2. L=59mH, I AS = 2A, VDD = 50V, RG = 25Ω, Starting TJ= 25 ℃
3 I SD ≤ 2A, di/dt ≤ 200A/µs , VDD ≤ BVDS, Starting TJ= 25 ℃
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics

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4
VDS = 30V
Top VGS=15.0V 250 μs Pulse Test
10.0V
10
9.0V
3 8.0V
7.0V

Drain Current, ID [A]

Drain Current, ID [A]

6.0V
5.5V 150℃
5.0V
4.5V
2 Bottom 4.0V 25℃
1

-55℃

1
1. TC = 25℃
2. 250μs Pulse Test

0 0.1
0 5 10 15 20 2 4 6 8 10
Drain-Source Voltage, VDS [V] Gate-Source Voltage, VGS [V]

8 8
VGS = 0V
TJ = 25℃
250μs Pulse Test
Reverse Drain Current, IDR [A]
Drain-Source On-Resistance

6 6
VGS = 10V

150℃ 25℃
RDS(ON) [Ω]

4 4
VGS = 20V

2 2

0 0
0 1 2 3 4 5 6 0.0 0.3 0.6 0.9 1.2 1.5
Drain Current,ID [A] Source-Drain Voltage, VSD [V]

800 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
ID = 2.0A
Crss = Cgd
VDS = 300V
10
Gate-Source Voltage, VGS [V]

600 VGS = 0 V
f = 1 MHz VDS = 120V
8
Capacitance [pF]

Ciss

400 6 VDS = 480V

Coss
4

200
Crss
2

0 0
-1 0 1
10 10 10 0 2 4 6 8 10 12

Drain-Source Voltage, VDS [V] Total Gate Charge, QG [nC]

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 TMT2N60ZG

1.3 3.5

VGS = 10 V
VGS = 0 V
Drain-Source Breakdown Voltage

3.0 ID = 1.0 A
1.2 ID = 250 μA

Drain-Source On-Resistance
BVDSS, (Normalized)

RDS(ON), (Normalized)
2.5
1.1

2.0
1.0
1.5

0.9
1.0

0.8
0.5

0.7 0.0
-80 -40 0 40 80 120 160 -80 -40 0 40 80 120 160
o
Junction Temperature,TJ [ C] Junction Temperature, TJ [ C]
o

2.5 1.5

2.0
Gate Threshold Voltage
Drain Current, ID [A]

VTH, (Normalized)

1.0
1.5

1.0
0.5

0.5
VDS = VGS
ID = 250  A
0.0 0.0
25 50 75 100 125 150 -80 -40 0 40 80 120 160

Case Temperature, TC [℃] Junction Temperature, TJ [ C]

o

Operation in This Area

is Limited by R DS(on)
1
10 10 us Duty=0.5
0
100 us 10
Transient thermal impedance

1 ms 0.2
Drain Current, ID [A]

10 ms 0.1
0
10 100 ms
0.05
DC
ZthJC(t)

-1
10 0.02 PDM
t
0.01
T
-1
10 single pulse
Duty = t/T
ZthJC(t) = 2.4 ℃/W Max.
o -2
TC = 25 C 10
o
TJ = 150 C
Single Pulse
-2
10
0 1 2 3 -5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10 10 10 10 10

Drain-Source Voltage, VDS [V] Pulse Width, t [sec]

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