Analog Electronics

One output structure of a TTL gate is often referred to as a ________.
totem-pole arrangement
diode arrangement
JBT arrangement
base, emitter, collector arrangement
Incorrect
Correct answer is highlighted in green color
103. Question
Category: Part-B
Which is not part of emitter-coupled logic (ECL)?
Differential amplifier
Bias circuit
Emitter-follower circuit
Totem-pole circuit
Correct
104. Question
Category: Part-B
A positive edge-triggered D flip-flop will store a 1 when ________.
the D input is HIGH and the clock transitions from HIGH to LOW
the D input is HIGH and the clock transitions from LOW to HIGH
the D input is HIGH and the clock is LOW
the D input is HIGH and the clock is HIGH
Correct
128. Question
Category: Part-B
How many terminals does a diode have?
1.0
2.0
3.0
4.0
Correct
129. Question
Category: Part-B
What is the resistor value of an ideal diode in the region of conduction?
0 Ohm
5 kOhm
Undefined
Infinity
Correct
130. Question
Category: Part-B
What is the state of an ideal diode in the region of nonconduction?
An open circuit
A short circuit
Unpredictable
Undefined
Correct
131. Question
Category: Part-B
In BJT, At what region of operation is the base-emitter junction forward biased and the base-collector junction reverse
biased?
Saturation
Linear or active
Cutoff
None of the above
Not attempted
132. Question
Category: Part-B
What is the typical value of the current gain of a common-base configuration?
Less than 1
Between 1 and 50
Between 100 and 200
Undefined
Not attempted
133. Question
Category: Part-B
With BJT, the _____ configuration is frequently used for impedance matching.
fixed-bias
voltage-divider bias
emitter-follower
collector feedback
Not attempted
134. Question
Category: Part-B
Which of the following transistor(s) has (have) depletion and enhancement types?
BJT
JFET
MOSFET
None of the above

Correct
139. Question
Category: Part-B
Which of the following semiconductor materials is (are) used for manufacturing solar cells?
Gallium arsenide
Indium arsenide
Cadmium sulfide
All of the above
Incorrect
Correct answer has been highlighted in green color
140. Question
Category: Part-B
Which of the following is (are) diodes?
Schottky
Varactor
Tunnel
All of the above
Correct
141. Question
Category: Part-B
In the Wien bridge oscillator, which of the following is (are) frequency-determining components?
R1 and R2
C1 and C2
R1, R2, C1, and C2
None of the above

Not attempted
142. Question
Category: Part-B
For a phase-shift oscillator, the gain of the amplifier stage must be greater than _____.
19.0
29.0
30.0
1.0
Not attempted
143. Question
Category: Part-B
In which of the following are operational amplifiers (op-amps) used?
Oscillators
Filters
Instrumentation circuits
All of the above
Correct
144. Question
Category: Part-B
What is the ratio of the output voltage to the input voltage at the cutoff frequencies in a normalized frequency response
plot?
0.25
0.5
0.707
1.0
Not attempted
145. Question
Category: Part-B
A BJT is a ________-controlled device.

current
voltage
Power
none of these
Correct
107. Question
Category: Part-B
Which is not a MOSFET terminal?
Gate
Drain
Source
Base
Correct
129. Question
Category: Part-B
There is a small amount of current across the barrier of a reverse-biased diode. This current is called
forward-bias current.
reverse breakdown current.
conventional current.
reverse leakage current.
Correct
130. Question
Category: Part-B
For a silicon transistor, when a base-emitter junction is forward-biased, it has a nominal voltage drop
of
0.7 V.
0.3 V.
0.2 V.
VCC.
Correct
131. Question
Category: Part-B
The term BJT is short for
base junction transistor.
binary junction transistor.
both junction transistor.
bipolar junction transistor.
Correct
132. Question
Category: Part-B
An emitter-follower is also known as a
common-emitter amplifier.
common-base amplifier.
common-collector amplifier.
Darlington pair.
Incorrect
133. Question
Category: Part-B
A common-drain amplifier is similar in configuration to which BJT amplifier?
common-emitter
common-collector
common-base
common-gate
Not attempted
134. Question
Category: Part-B
The lower critical frequency is also known as the
break frequency.
cutoff frequency.
corner frequency.
all of the above
Correct
135. Question
Category: Part-B
An IGBT is a
thyristor.
MOSFET.
BJT.
combination of a MOSFET and BJT.

Correct
136. Question
Category: Part-B
The critical frequency is defined as the point at which the response drops _________ from the
passband.
–20 dB
–3 dB
–6 dB
–40 dB
Not attempted
137. Question
Category: Part-B
Sinusoidal oscillators operate with _____ feedback.
positive
negative
no feedback
None of these
Incorrect
132. Question
Category: Part-B
FET amplifiers provide ________.
excellent voltage gain
high input impedance

low power consumption
All of the above
Correct
133. Question
Category: Part-B
An FET is a ________-controlled device.
current
voltage
average power
None of the above
Correct
134. Question
Category: Part-B
Transistors are _____-terminal devices.
2.0
3.0
4.0
5.0
Correct
135. Question
Category: Part-B
How many type of carriers participate in the injection process of a unipolar device?
1.0
2.0
0.0
3.0
Not attempted
136. Question
Category: Part-B
In what state is a silicon diode if the voltage drop across it is about 0.7 V?
No bias
Forward bias
Reverse bias
Zener region
Correct
137. Question
Category: Part-B
Which capacitor appears in the forward-bias region?
Diffusion
Transition
Depletion
None of the above
Incorrect
138. Question
Category: Part-B
In which of the following color(s) is (are) LEDs presently available?
Yellow
White
Orange
All of the above
Correct
139. Question
Category: Part-B
For the BJT to operate in the active (linear) region, the base-emitter junction must be _____-biased
and the base-collector junction must be _____-biased.
forward, forward
forward, reverse
reverse, reverse
reverse, forward
Correct
140. Question
Category: Part-B
Which of the following configurations has the lowest output impedance?
Fixed-bias
Voltage-divider
Emitter-follower
None of the above
Not attempted
141. Question
Category: Part-B
The ________-frequency response is calculated primarily by the stray capacitance between the turns
of the primary and secondary windings.
low
mid
high
None
Not attempted
142. Question
Category: Part-B
Which of the following is (are) feedback?
Voltage-series
Voltage-shunt
Current-series
All of the above
Incorrect
122. Question
Category: Part-B
Which diode(s) has (have) a zero level current and voltage drop in the ideal model?
Si
Ge
Both Si and Ge
Neither Si nor Ge
Correct
Correct answeer has ben highlighted in green color

123. Question
Category: Part-B
How much is the base-to-emitter voltage of a transistor in the “on” state?
0V
0.7 V
0.7 mV
Undefined
Correct
124. Question
Category: Part-B
How many valence electrons does a silicon atom have?
1.0
2.0
3.0
4.0
Not attempted
125. Question
Category: Part-B
Which of the following is (are) the application(s) of a transistor?
Amplification of signal
Switching and control
Computer logic circuitry
All of the above
Correct
126. Question
Category: Part-B
The emitter-follower configuration has a _____ impedance at the input and a _____ impedance at
the output.
low, low
low, high
high, low
high, high
Correct
127. Question
Category: Part-B
The BJT is a _____ device. The FET is a _____ device.
bipolar, bipolar
bipolar, unipolar
unipolar, bipolar
unipolar, unipolar
Correct
128. Question
Category: Part-B
The larger capacitive elements of the design will determine the ________ cutoff frequency.
low
mid
high
None of the above
Incorrect
94. Question
Category: Part-B
The active switching element used in all TTL circuits is the ________.
bipolar junction transistor (BJT)
field-effect transistor (FET)
metal-oxide semiconductor field-effect transistor (MOSFET)
unijunction transistor (UJ)
Correct
113. Question
Category: Part-B
A diode is in the “_____ ” state if the current established by the applied sources is such that its
direction matches that of the arrow in the diode symbol, and VD ≥ 0.7 V for Si and VD ≥ 0.3 V for Ge.
off
on
neutral
quiescent
Correct
114. Question
Category: Part-B
In which region are both the collector-base and base-emitter junctions forward-biased?
Active
Cutoff
Saturation
All of the above
Incorrect
115. Question
Category: Part-B
For what kind of amplifications can the active region of the common-emitter configuration be used?
Voltage
Current
Power
All of the above
Incorrect
116. Question
Category: Part-B
How many orbiting electrons does the germanium atom have?
4.0
14.0
32.0
41.0
Not attempted
117. Question
Category: Part-B
In general, LEDs operate at voltage levels from _____ V to _____ V.
1.0, 3.0
1.7, 3.3
0.5, 4.0
None of the above
Correct
118. Question
Category: Part-B
Calculate the storage time in a transistor switching network if toff is 56 ns, tf = 14 ns, and tr = 20 ns.
70 ns
42 ns
36 ns
34 ns
Not attempted
119. Question
Category: Part-B
Which of the following should be done to obtain the ac equivalent of a network?
Set all dc sources to zero
Replace all capacitors by a short-circuit equivalent.
Remove all elements bypassed by the short-circuit equivalent.
All of the above
Not attempted
120. Question
Category: Part-B
Which of the h-parameters corresponds to re in a common-base configuration?

hib
hfb
hrb
hob
Not attempted
121. Question
Category: Part-B
What is the level of IG in an FET?
Zero amperes
Equal to ID
Depends on VDS
Undefined
Not attempted
122. Question
Category: Part-B
For the FET, the relationship between the input and output quantities is _____ due to the _____
term in Shockley’s equation.
nonlinear, cubed
linear, proportional
nonlinear, squared
Not attempted
123. Question
Category: Part-B
The E-MOSFET is quite popular in ________ applications.
digital circuitry
high-frequency
buffering
All of the above
Correct
124. Question
Category: Part-B
Which of the following oscillators is (are) tuned oscillators?
Colpitts
Hartley
Crystal
All of the above
Incorrect
125. Question
Category: Part-B
Which of the following areas is (are) applications of varactor diodes?
FM modulators
Automatic-frequency control devices
Adjustable bandpass filters
All of the above
Correct
126. Question
Category: Part-B
Which of the following transistors is an SCR composed of?

npn, pnp
npn, npn
pnp, pnp
None of the above
Not attempted
84. Question
Category: Part-B
The oscillator design that uses a third capacitor in the tank circuit for swamping out the effect of the
transistor’s internal capacitances is the
Hartley design
Clapp design
Colpitts design
Crystal design
Not attempted
85. Question
Category: Part-B
Which of the transistors of an SCR are conducting when the SCR is fired and is in the conduction
mode?
npn
pnp
Both npn and pnp
Neither npn nor pnp
Not attempted
86. Question
Category: Part-B
Which of the following improvements is (are) a result of the negative feedback in a circuit?
Lower output impedance

Reduced noise
More linear operation
All of the above
Correct
87. Question
Category: Part-B
A filter that provides a constant output from dc up to a cutoff frequency and passes no signal above
that frequency is called a _____ filter.
low-pass
high-pass
bandpass
All pass
Correct
88. Question
Category: Part-B
The smaller capacitive elements of the design will determine the ________ cutoff frequencies.
low
mid
high
None of the above
Not attempted
89. Question
Category: Part-B
What is the normalized gain expressed in dB for the cutoff frequencies?

–3 dB
+3 dB
–6 dB
–20 dB
Not attempted
90. Question
Category: Part-B
The input controlling variable for a(n) _____ is a current level and a voltage level for a(n) _____.
BJT, FET
FET, BJT
FET, FET
BJT, BJT
Not attempted
91. Question
Category: Part-B
List the terminal(s) of a field-effect transistor (FET).
Drain
Gate
Source
All of the above
Correct
92. Question
Category: Part-B
What is the controlling current in a common-base configuration?

Ie
Ic
Ib
None of the above
Not attempted
93. Question
Category: Part-B
What does the negative sign in the voltage gain of the common-emitter fixed-bias configuration
indicate?
The output and input voltages are 180º out of phase.
Gain is smaller than 1.
Gain is larger than 1.
None of the above
Not attempted
94. Question
Category: Part-B
Which of the following ratings is true?
Si diodes have higher PIV and narrower temperature ranges than Ge diodes.
Si diodes have higher PIV and wider temperature ranges than Ge diodes.
Si diodes have lower PIV and narrower temperature ranges than Ge diodes.
Si diodes have lower PIV and wider temperature ranges than Ge diodes.
Not attempted
103. Question
Category: Part-B
Which one of the following is not a negative resistance device?
Gunn diode
Tunnel diode
Impatt diode
Varactor diode
Not attempted
104. Question
Category: Part-B
A PIN diode can be used
as a shunt mounted switch
as a series mounted switch
both as series or shunt mounted switch
non of the above
Not attempted
105. Question
Category: Part-B
The diode _____.
is the simplest of semiconductor devices
has characteristics that closely match those of a simple switch
is a two-terminal device
All of the above
Correct
106. Question
Category: Part-B
The ideal diode is a(n) _____ circuit in the region of nonconduction.

open
short
both open and short
none of these
Correct
107. Question
Category: Part-B
Which of the following is an atom composed of?
Electrons
Protons
Neutrons
All of the above
Correct
108. Question
Category: Part-B
Which of the following currents is nearly equal to each other?
IB and IC
IE and IC
IB and IE
IB, IC, and IE
Not attempted
109. Question
Category: Part-B
For the BJT to operate in the saturation region, the base-emitter junction must be _____-biased and
the base-collector junction must be _____-biased.
forward, forward
forward, reverse
reverse, reverse
reverse, forward
Incorrect
110. Question
Category: Part-B
For the common-emitter fixed-bias configuration, there is a _____ phase shift between the input
and output signals.
0º
45º
90º
180º
Correct
111. Question
Category: Part-B
Which of the following configurations has an output impedance Zo equal to RC?

Fixed-bias common-emitter
Common-emitter voltage-divider with bypass capacitor
Common-emitter voltage-divider without bypass capacitor
All of the above
Not attempted
112. Question
Category: Part-B
A BJT is a _____-controlled device. The JFET is a _____ – controlled device.
voltage, voltage
voltage, current
current, voltage
current, current
Incorrect
66. Question
Category: Part-B
The number of leads in an SCR are :
2.0
3.0
4.0
5.0
Correct
Anode, cathode and gate.
104. Question
Category: Part-B
Which of the following is (are) the terminal(s) of a transistor?
Emitter
Base
Collector
All of the above
Correct
105. Question
Category: Part-B
List the types of bipolar junction transistors.
ppn, npn
pnp, npn
npp, ppn
nnp, pnp
Correct
106. Question
Category: Part-B
Which of the following regions is (are) part of the output characteristics of a transistor?
Active
Cutoff
Saturation
All of the above
Correct
107. Question
Category: Part-B
Which of the following voltages must have a negative level (value) in any npn bias circuit?
VBE
VCE
VBC
None of the above
Not attempted
108. Question
Category: Part-B
What is the unit of the parameter ho?
Volt
Ohm
Siemen
No unit
Not attempted
109. Question
Category: Part-B
The input impedance of a BJT amplifier is purely _____ in nature and can vary from a few _____ to
_____.
resistive, ohms, megohms
capacitive, microfarads, farads
inductive, millihenrys, henrys
None of the above
Correct
110. Question
Category: Part-B
The three terminals of the JFET are the _____, _____, and _____.
gate, collector, emitter
base, collector, emitter
gate, drain, source
gate, drain, emitter
Correct
111. Question
Category: Part-B
iIn FET, the level of VGS that results in ID = 0 mA is defined by VGS = _____.
VGS(off)
VP
VDS
None of the above
Not attempted
112. Question
Category: Part-B
Which of the following current equations is true for FET?
IG = ID
IG = IS
ID = IS
IG = ID = IS
Not attempted
120. Question
Category: Part-B
Which of the following is (are) diodes?
Schottky
Varactor
Tunnel
All of the above
Correct
105. Question
Category: Part-B
In a negative feedback amplifier, shunt mixing:
Tends to increase the input resistance
Tends to decrease the input resistance
Does not alter the input resistance

Produces the same effect on input resistance as the series mixing
Not attempted
106. Question
Category: Part-B
For sustaining oscillations in an oscillator:
Feedback factor should be unity
Phase shift should be 00
Feedback should be negative
Both (a) and (b)
Not attempted
107. Question
Category: Part-B
A Zener diode is based on the principle of
Thermionic emission
Tunneling of charge carriers across the junction
Diffusion of charge carriers across the junction
None of the above
Correct
108. Question
Category: Part-B
How many layers of material does a transistor have?
1
2
Correct
109. Question
Category: Part-B
One eV is equal to _____ J.
6.02 × 1023
1.6 × 10–19
6.25 × 1018
1.66 × 10–24
Correct
110. Question
Category: Part-B
In the active region, while the collector-base junction is _____-biased, the base-emitter is _____-
biased.
forward, forward
forward, reverse
reverse, forward
reverse, reverse
Correct

111. Question
Category: Part-B
Which of the following configurations can a transistor set up?
Common-base
Common-emitter
Common-collector
All of the above
Correct
112. Question
Category: Part-B
Which of the following elements is most frequently used for doping pure Ge or Si?
Boron
Gallium
Indium
All of the above
Correct
113. Question
Category: Part-B
What is the level of drain current ID for gate-to-source voltages VGS less than (more negative than)
the pinch-off level?
zero amperes
IDSS
Negative value
Undefined
Not attempted
114. Question
Category: Part-B
The region to the left of the pinch-off locus is referred to as the _____ region.
saturation
cutoff
ohmic
All of the above
Not attempted
115. Question
Category: Part-B
Which of the following is (are) true of a self-bias configuration compared to a fixed-bias

configuration?
One of the dc supplies is eliminated.
A resistor RS is added.
VGS is a function of the output current ID.
All of the above

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One output structure of a TTL gate is often referred to as a ________.

base, emitter, collector arrangement

Correct answer is highlighted in green color

Which is not part of emitter-coupled logic (ECL)?

Correct answer is highlighted in green color

A positive edge-triggered D flip-flop will store a 1 when ________.

the D input is HIGH and the clock is LOW

the D input is HIGH and the clock is HIGH

Correct answer is highlighted in green color

Correct answer is highlighted in green color

What is the resistor value of an ideal diode in the region of conduction?

Correct answer is highlighted in green color

What is the state of an ideal diode in the region of nonconduction?

Correct answer is highlighted in green color

None of the above

What is the typical value of the current gain of a common-base configuration?

Between 100 and 200

None of the above

Correct answer is highlighted in green color

All of the above

Correct answer has been highlighted in green color

Which of the following is (are) diodes?

All of the above

Correct answer has been highlighted in green color

R1, R2, C1, and C2

None of the above

In which of the following are operational amplifiers (op-amps) used?

All of the above

Correct answer has been highlighted in green color

A BJT is a ________-controlled device.

Correct answer has been highlighted in green color

Which is not a MOSFET terminal?

Correct answer has been highlighted in green color

reverse breakdown current.

reverse leakage current.

Correct answer has been highlighted in green color

Correct answer has been highlighted in green color

The term BJT is short for

base junction transistor.

binary junction transistor.

both junction transistor.

bipolar junction transistor.

Correct answer has been highlighted in green color

An emitter-follower is also known as a

A common-drain amplifier is similar in configuration to which BJT amplifier?

The lower critical frequency is also known as the

all of the above

Correct answer has been highlighted in green color

combination of a MOSFET and BJT.

Correct answer has been highlighted in green color

Sinusoidal oscillators operate with _____ feedback.

Correct answer has been highlighted in green color

FET amplifiers provide ________.

excellent voltage gain

high input impedance

All of the above

Correct answer has been highlighted in green color

An FET is a ________-controlled device.

None of the above

Correct answer has been highlighted in green color

Transistors are _____-terminal devices.

Correct answer has been highlighted in green color

The BJT is a _ device. The FET is a _ device.