GOFORD 8205A

P R ODUC T S UMMAR Y
-
D1 D2

VDSS RDS(ON) ID
@ 4.0V (typ) G1 G2

20V 21mΩ 4A
S1 S2

F E AT UR E S S OT26
Top View
S uper high dense cell design for low R DS (ON ). S1 6 G1
1
R ugged and reliable. D1/D2 2 5 D1/D2
S urface Mount P ackage. S2 3 4 G2

ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)

P arameter S ymbol Limit Unit
Drain-S ource Voltage V DS 20 V
Gate-S ource Voltage V GS 10 V

Drain C urrent-C ontinuous a @ T J =25 C ID 4 A

b
-P ulsed IDM 25 A

Drain-S ource Diode Forward C urrent a IS 1.25 A

Maximum P ower Dissipation a PD 1.25 W

Operating Junction and S torage
T J , T S TG -55 to 150 C
Temperature R ange

THE R MAL C HAR AC TE R IS TIC S

Thermal R esistance, Junction-to-Ambient a R JA 100 C /W

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 GOFORD 8205A

E LE CTR ICAL CHAR ACTE R IS TICS (T A = 25 C unless otherwise noted)

Parameter S ymbol Condition Min Typ C Max Unit
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA 20 V
Zero Gate Voltage Drain Current IDS S V DS = 19.5V GS = 0V 1 uA
Gate-Body Leakage IGS S V GS = 10V,V DS = 0V 0.1 uA
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 0.45 1.2 V
V GS = 4.0V, ID = 4.5A 21 25 m ohm
Drain-S ource On-S tate R esistance R DS (ON)
V GS = 2.5V, ID = 3.5A 37.5 m ohm

Forward Transconductance gFS V DS = 5.0V, ID= 4A 10 S

DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance C IS S 608 PF
V DS =8V, V GS = 0V
Output Capacitance C OS S 115 PF
f =1.0MH Z
R everse Transfer Capacitance CRSS 86 PF
c
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time tD(ON) V DD = 10V, 10 ns
R ise Time tr ID = 1A, 14 ns
V GE N = 4.5V,
Turn-Off Delay Time tD(OFF) R L = 10 ohm 39 ns
Fall Time tf R GE N = 10 ohm 20 ns
V DS =10V, ID =4A,VGS=4.5V 11 nC
Total Gate Charge Qg
V DS =10V, ID =5A,V GS =2.5V nC
Gate-S ource Charge Q gs V DS =10V, ID = 5 A 2.3 nC
Gate-Drain Charge Q gd V GS =4.5V 2.5 nC

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Page 2
 GOFORD 8205A

E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted)

C
Parameter S ymbol Condition Min Typ Max Unit
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Diode Forward Voltage VSD V GS =0V,IS=1.7A 1.2 V

Notes
a.Reflow soldering internal actual temperature < 250 degrees, time in high temperature < 7 s .
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.

20 15
V G S =8V
V G S =3V
16 12
ID , Drain C urrent(A)

I D , Drain C urrent (A)

V G S =2.5V V G S =2V
12 9

8 6
T j=125 C -55 C

4 3
V G S =1.5V 25 C

0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.4 0.8 1.2 1.6 2.0 2.4
V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V )

F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics

60 1.5
R DS (ON) , On-R es is tance

50 1.4
V G S =4V
R DS (on) (m Ω)

Normalized

40 1.3 I D =5A
V G S =2.5V
30 1.2

20 V G S =4V 1.1 V G S =2.5V

I D =3A
10 1.0

1 0
1 4 8 12 16 20 0 25 50 75 100 125 150
T j( C )
I D , Drain C urrent (A) T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent F igure 4. On-R es is tance Variation with
and G ate V oltage Drain C urrent and Temperature

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 GOFORD 8205A

Drain-S ource B reakdown V oltage

G ate-S ource T hres hold V oltage

1.4 1.20
I D =250uA
1.2 V DS =V G S
1.15
I D =250uA

B V DS S , Normalized
V th, Normalized

1.0 1.10
0.8
1.05
0.6
1.00
0.4
0.95
0.2

0.0 0.90
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C )

F igure 5. G ate T hres hold V ariation F igure 6. B reakdown V oltage V ariation

with T emperature with T emperature

60 20.0
I D =5A
50 125 C
Is , S ource-drain current (A)

10.0
R DS (on) (m Ω)

40

25 C 5.0
30
25 C
20
125 C 75 C
75 C
10

0 1.0
0 1 2 4 6 8 0 0.3 0.6 0.9 1.2 1.5

V G S , G ate-S ource Voltage (V ) V S D , B ody Diode F orward V oltage (V )

F igure 7. On-R es is tance vs . F igure 8. B ody Diode F orward V oltage

G ate-S ource V oltage V ariation with S ource C urrent

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 GOFORD 8205A

600 5

V G S , G ate to S ource V oltage (V )

C is s V DS =10V
500 4 I D =5A
C , C apacitance (pF )

400
3
300
C os s 2
200
C rs s 1
100

0 0
0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 8
6 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC )

F igure 9. C apacitance F igure 10. G ate C harge

600 50
30 it
im
10 )L 10
ms
Tr
ON
S witching T ime (ns )

I D , Drain C urrent (A)

100 D S( 10
R 0m
60 TD(off) TD(on)
s
Tf 1s
DC
10 1

V DS =10V ,ID=1A 0.1 V G S =10V

1 S ingle P ulse
V G S =4.5V
T A =25 C
0.03
1 6 10 60 100 300 600 0.1 1 10 60

R g, G ate R es is tance ( Ω) V DS , Drain-S ource V oltage (V )

F igure 11.s witching characteris tics

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 GOFORD 8205A

V DD
ton toff
RL td(on) tr td(off) tf
V IN 90%
90%
D V OUT
5 VG S
R GE N
V OUT 10% INVE R TE D 10%

G
90%
50% 50%
S V IN
10%

P ULS E WIDTH

F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms

10
Norm aliz ed Transien t
Therma l R esis tanc e

1
0.5

0.2
P DM
0.1
0.1 t1
t2
0.05
1. R thJ A (t)=r (t) * R thJ A
2. R thJ A =S ee Datas heet
0.02 3. T J M-T A = P DM* R thJ A (t)
0.01 Singl e P ulse 4. Duty C ycle, D=t1/t2
0.01
0.00001 0.0001 0.00 1 0.0 1 0.1 1 10 100 1000
Square Wave Puls e D uration(sec )
Normalized Thermal Transient Impedance Curv e

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