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TECHNOLOGICAL INSTITUTE OF THE PHILIPPINES

COURSE SYLLABUS
COURSE CODE ECE 201
COURSE NAME Electronics 1: Electronic Devices and Circuits
CREDITS 4 units (3 units lecture, 1 unit laboratory)
CONTACT HOURS 3 hours lecture, 3 hours laboratory
INSTRUCTOR Cayetano D. Hiwatig
Faculty Member, Electronics Engineering Department
TEXTBOOK Boylestad, R. & Nashelsky, L. (2013). Electronic devices and circuit theory (11th ed.).
Upper Saddle River, New Jersey: Pearson Education
Other Supplemental Schultz, M. (2016). Grob's basic electronics (12th ed.). New York, NY : McGraw-Hill
Materials Education
Anand, M.L. (2016). Electronic devices & circuits - II (for ece and electrical
engineering students) (2nd ed.) vol. 2. India : S.K. Kataria & Sons
Anand, M.L. (2015). Electronic devices & circuits - I (basic electronics: (for ece,
comp. and electrical engineering. students), vol. 1. New Delhi : S.K. Kataria &
Sons
Schuler, C. (2013). Electronics: principle and application (8th ed.). New York, New
York: McGraw-Hill.
Gates, E. (2012). Introduction to electronics. (6th ed.). Cliffon Park, New York:
Delmar/Cengage Learning.
SPECIFIC COURSE INFORMATION
a. Course Description
The course covers the introduction to quantum mechanics of solid-state electronics. Characteristics and models of
diode and transistor. Diode circuit analysis (ac and dc analysis) and applications. DC analysis of transistor.
Bipolar Junction Transistor (BJT) and Field Effect Transistor (FET) biasing. AC analysis of transistor. Small
signal and large signal analysis of BJT and FET. Transistor amplifiers. Transistor as switch, and boolean logic.
b. Prerequisites ---
Co-requisites EE 200E – Electrical Circuits 1
c. Course Classification
(Required/elective/ Required
selected elective)
SPECIFIC GOALS FOR THE COURSE
a. Course Objective
The course intends to provide students to:
1. Analyze semiconductor physics, diode and diode circuit analysis.
2. Solve problems in diode and diode circuit analysis.
3. Analyze bipolar junction transistor (BJT) and field effect transistor (FET) biasing circuits.
4. Solve problems in bipolar junction transistor (BJT) and field effect transistor (FET) DC circuit analysis.
5. Analyze bipolar junction transistor (BJT) and field effect transistor (FET) small and large signal analysis.
6. Solve problems in bipolar junction transistor (BJT) and field effect transistor (FET) small and large signal transistor
amplifiers.
7. Skills in conducting and designing experiments using NI-ELVIS.
b. Course Outcomes
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By the end of the course, the students will be able to:

1. Discuss the construction, configurations, operations and applications of semiconductor physics, rectifier diode,
special diodes and transistors.
2. Solve problems in DC and AC analysis of diode.
3. Design a voltage regulated power supply.
4. Analyze the DC and AC operation of BJT and FET of amplifier circuits.
5. Design and construct a preamplifier circuit.
6. Design and conduct an experiment using NI-ELVIS modules.
7. Reflect on personal transformation along the TIP graduate attributes.
c. Student Outcomes Addressed by the Course
1. Design and conduct experiments, as well as to analyze, and interpret data, synthesize information to provide valid
conclusions for investigating complex problems. (student outcome d)
COURSE TOPICS
Prelim Period (Weeks 1–6)
I. Introduction; TIP Vision and Mission; TIP Graduate Attributes/ Institutional Intended Learning Outcomes;
Program Educational Objectives/Student Outcomes; Course Objectives/Course Intended Learning Outcomes;
Course Policies
II. Fundamentals of tubes and other devices;
III. Introduction to semiconductors; Bohr’s model, valence electrons, holes, types of materials according to
conductivity.
IV. DC and AC Diode circuits; semiconductor diode, diode equivalent circuit, loadline, clipper circuit, clamper
circuit, wave shaping circuit, and Zener diode.
V. Diode applications; Zener diode regulation, dc power supply, multiplier circuits and introduction to filtered
power supply.
- Laboratory Experiments: NI ELVIS Familiarization, Diode Familiarization, Diode application, DC Power
Supply.
Midterm Period (Weeks 7–12)
VI. Bipolar Junction Transistor (DC analysis); Transistor construction and operation, DC analysis of BJT, DC
loadline, fixed bias circuit, emitter-stabilized bias circuit, voltage-divider bias circuit, collector feedback bias
circuit, miscellaneous bias circuit, transistor switch, and Boolean logic.
VII. Bipolar Junction Transistor (AC analysis); BJT small signal analysis, AC equivalent of BJT, input impedance,
output impedance, voltage gain, common-emitter configuration, common-base configuration, common-collector
configuration, preamplifiers.
- Laboratory Experiments: BJT Familiarization, BJT Biasing Circuits, Common-emitter amplifier.
Final Period (Weeks 13–18)
VIII. Field Effect Transistor and MOSFET (DC analysis); FET and MOSFET construction and operation, DC
analysis of FET, DC loadline, fixed bias circuit, self-bias circuit, voltage-divider bias circuit, and miscellaneous
bias circuit.
IX. Field Effect Transistor and MOSFET (AC analysis); FET small signal analysis, AC equivalent of FET, input
impedance, output impedance, voltage gain, common-source configuration, common-gate configuration, and
common-drain configuration.
- Laboratory Experiments: FET Biasing Circuits, Pre-amplifier.

Prepared by: Noted by: Approved to take effect on 1st Sem SY 2019-2020

Engr. Cayetano D. Hiwatig Engr. Roberto C. Dela Cruz ASEAN Engr. F. A. Magnaye / Dr. R.P. Valdepeñas
Faculty Member’s Printed Name and Signature Department Chair Dean/ VPAA

Date: Date: Date:

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