EE380: Electronics Circuit Laboratory

Exp. 1 : Parameter Extraction for Diodes and Transistors

1. Introduction: The analysis and design of circuits requires models of semiconductor

devices. These models include mathematical equations and parameters. While the
equations remain the same from one device to another, the parameters, in general, vary.
Sometimes, parameters can be obtained as outputs of other models, while at other times
they have to be experimentally measured. In this experiment, parameters have to be
estimated for PN junction diodes and bipolar junction transistors (BJT).

2.1. Diode Model : A common model of a diode for circuit analysis is given below:

CJ

IO

= ID

CD

dVD dI
I D  Io  C j    o (1)
dt dt
VD
I o  I S  {exp( )  1} (2)
nVT
C jo
Cj  (3)
V
(1  D ) m
Vj

The parameters of the model are :

I S is the reverse saturation current, n is the ideality factor and VT  kT q .
C jo is junction capacitance at VD  0 , V J is junction potential (also called built-in-
potential),
m = grading coefficient (referring to whether junction is abrupt or graded).
The diffusion charge (QD) which leads to diffusion capacitance CD can be expressed as
QD = IO  , where  is called the transit time of the diode.

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 Although, a more realistic model includes several other parameters such as diode series
resistance, flicker noise coefficients, parameters characterizing breakdown and
temperature dependence of some of the parameters listed above, we shall consider
extraction of only the parameters mentioned above.

2.2. Parameter extraction (methodology): The parameters of the model have to be

measured by designing suitable experiments. Each experiment is a system of constraints
that is imposed on the device so that only one parameter manifests itself. Consider for
example I S which is determined by imposing the following set of constraints:

(i) By using dc measurements, all the time dependent terms in Eq. (1) are eliminated
leaving only the parameters I S and n (we shall assume that VT is known).
(ii) By plotting ln( I D )  VD characteristics and measuring its intercept with the
current axis, the parameter n can also be eliminated leaving the final measured
variable dependent only on IS.
Similarly, by measuring the slope, we can eliminate I S and obtain n .
Consider next the parameters associated with junction capacitance C j . To measure
these, we would like to eliminate (or minimize) the current contributions due to the first
and the last terms. This can be done as follows:

(i) making measurements under reverse-bias conditions.

(ii) If a voltage of the form V D  VDo  v Do Sin(t ) is applied then through
measurement of the sinusoidal current, C j (VDo ) can be determined.
(iii) By taking several measurements and suitably plotting them(adding more
constraints), the parameters C jo ,V j , m can be determined.

Consider next the transit time. Its measurement is slightly more complex. We begin by
noticing that for most forward biased diodes the second term is much less important than
the first and the last terms and therefore its effect can be neglected. Suppose now a
voltage step is applied to the diode circuit shown below

VO VO
V O(t)

t t
VF
V IN (t) R

VR RR S
Fig. 1a Fig. 1b Fig, 1c

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A typical waveform that is likely to be experimentally observed for the voltage V (t ) is
also shown in Fig.1b. If the circuit is analyzed with the diode model of Eq.(1), we
would obtain waveform shown in Fig. 1c and the expression
I
 S    ln(1  F ) (4)
IR

Although, there are lot of differences between the experimentally observed waveform and
the theoretically estimated one, S  RR. under the condition IF/IR = 0.1. Therefore, a
measurement of total reverse recovery time RR can be used to obtain the transit time of
the diode using Eq. (4).

2.3 Measurement : Design suitable experiment arrangements to implement the methods

mentioned above for the diode provided to you in the laboratory. The equipment
available in the Lab. include dc power supply, Function generators and Oscilloscopes. A
capacitance meter is not available!. Besides these, all passive components and a variety
of transistors and ICs including 741 op amps. are available. For I S and n measurements,
take data for several decades of current( 106  102 A). Measure  for a forward
current of 1 mA .

3.1. BJT Model : A general model of a bipolar transistor is fairly complex involving
more than forty parameters ! For simplicity, we consider a dc model widely used for
analytical analysis in the active mode of operation
V
I C  I F  (1  CE ) (5)
VA
V
I F  I S  exp( BE ) (6)
VT
I
IB  F (7)
F
3.2 Parameter Extraction: The current gain can be measured by displaying the
I CE  VCE characteristics for a fixed I B on the oscilloscope. This method also yields other
parameters such as the minimum collector-emitter voltage in saturation VCE (sat.) and
V A from the slope of the displayed curve. However, the measurement of early voltage by
this method is error prone so that a different more reliable scheme is needed(Hint: output
V
resistance ro  CE I B  V A I C ).
I C

3.3 Measurement : Design suitable experiment arrangements to implement the methods

mentioned above. In these designs you may find the virtual ground property of an op
Amp. in negative feedback very useful. Measure results for collector current of 1 mA .

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 Example Circuits for different parts of the experiment:

Rf

R VO

do R1
VO
VIN

For measurement of IS and n For measurement of junction capacitance

VIN
VCC

RC
RC

Rf

RF

RB RB
VO
VO

For displaying IC vs. VCE characteristics For measurement of ro

Determine how each of these circuits work and suitable values for components and
voltages. Verify your designs using circuit simulations. These circuits are just one way of
implementing the parameter extraction procedure described earlier. You may use any
other circuit that you like.