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1N/FDLL 914/A/B / 916/A/B / 4148 / 4448

Discrete POWER & Signal


Technologies

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448

COLOR BAND MARKING


DEVICE 1ST BAND 2ND BAND
FDLL914 BLACK BROWN
FDLL914A BLACK GRAY
FDLL914B BROWN BLACK
FDLL916 BLACK RED
FDLL916A BLACK WHITE
FDLL916B BROWN BROWN
LL-34 FDLL4148 BLACK BROWN
DO-35 THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
FDLL4448 BROWN BLACK
OF THE CATHODE TERMINAL

High Conductance Fast Diode


Sourced from Process D3.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol Parameter Value Units


W IV Working Inverse Voltage 75 V
IO Average Rectified Current 200 mA
IF DC Forward Current 300 mA
if Recurrent Peak Forward Current 400 mA
if(surge) Peak Forward Surge Current
Pulse width = 1.0 second 1.0 A
Pulse width = 1.0 microsecond 4.0 A
Tstg Storage Temperature Range -65 to +200 °C
TJ Operating Junction Temperature 175 °C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol Characteristic Max Units


1N/FDLL 914/A/B / 4148 / 4448
PD Total Device Dissipation 500 mW
Derate above 25°C 3.33 mW/°C
RθJA Thermal Resistance, Junction to Ambient 300 °C/W

ã 1997 Fairchild Semiconductor Corporation


1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
High Conductance Fast Diode
(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units


BV Breakdown Voltage IR = 100 µA 100 V
IR = 5.0 µA 75 V
IR Reverse Current VR = 20 V 25 nA
VR = 20 V, TA = 150°C 50 µA
VR = 75 V 5.0 µA
VF Forward Voltage 1N914B / 4448 IF = 5.0 mA 620 720 mV
1N916B IF = 5.0 mA 630 730 mV
1N914 / 916 / 4148 IF = 10 mA 1.0 V
1N914A / 916A IF = 20 mA 1.0 V
1N916B IF = 30 mA 1.0 V
1N914B / 4448 IF = 100 mA 1.0 V
CO Diode Capacitance
1N916/A/B / 4448 VR = 0, f = 1.0 MHz 2.0 pF
1N914/A/B / 4148 VR = 0, f = 1.0 MHz 4.0 pF
TRR Reverse Recovery Time IF = 10 mA, VR = 6.0 V (60 mA), 4.0 nS
Irr = 1.0 mA, RL = 100 Ω

Typical Characteristics

REVERSE VOLTAGE vs REVERSE CURRENT REVERSE CURRENT vs REVERSE VOLTAGE


BV - 1.0 to 100 uA IR - 10 to 100 V
IR - REVERSE CURRENT (nA)

160 120
VVRR - REVERSE VOLTAGE (V)

Ta= 25°C Ta= 25°C


100
150
80
140
60

130 40

20
120
0
10 20 30 50 70 100
110 VR - REVERSE VOLTAGE (V)
1 2 3 5 10 20 30 50 100
GENERAL RULE: The Reverse Current of a diode will approximately
I R - REVERSE CURRENT (uA) double for every ten (10) Degree C increase in Temperature

FORWARD VOLTAGE vs FORWARD CURRENT FORWARD VOLTAGE vs FORWARD CURRENT


VF - 1 to 100 uA VF - 0.1 to 100 mA
550 750
V F - FORWARD VOLTAGE (mV)

V F - FORWARD VOLTAGE (mV)

Ta= 25°C Ta= 25°C


500 700

450 650

400 600

350 550

300 500

250 450
1 2 3 5 10 20 30 50 100 0.1 0.2 0.3 0.5 1 2 3 5 10
IF - FORWARD CURRENT (uA) I F - FORWARD CURRENT (mA)
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
High Conductance Fast Diode
(continued)

Typical Characteristics (continued)

VF - 0.01 - 20 mA (-40 to +65 Deg C)


FORWARD VOLTAGE vs FORWARD CURRENT FORWARD VOLTAGE vs
VF - 10 to 800 mA AMBIENT TEMPERATURE
1.6

VVF F - FORWARD VOLTAGE (mV)


V F - FORWARD VOLTAGE (V)

Ta= 25°C 900


Typical
1.4 800
Ta= -40°C
700
1.2
600 Ta= +25°C
1 500

400 Ta= +65°C


0.8
300
0.6
10 20 30 50 100 200 300 500 0.01 0.03 0.1 0.3 1 3 10
I F - FORWARD CURRENT (mA) I F - FORWARD CURRENT (mA)

CAPACITANCE vs REVERSE VOLTAGE REVERSE RECOVERY TIME vs


VR = 0.0 to 15 V REVERSE CURRENT
0.9 4
REVERSE RECOVERY (nS)

Ta= 25°C Ta= 25°C


3.5
CAPACITANCE (pF)

0.85 3

2.5

2
0.8
1.5

1
0.75 10 20 30 40 50 60
0 2 4 6 8 10 12 14 REVERSE CURRENT (mA)
REVERSE VOLTAGE (V) IF = 10 mA - IRR = 1.0 mA - Rloop = 100 Ohms

Average Rectified Current (Io) & POWER DERATING CURVE


Forward Current (I F) versus 500
DO-35
PDD - POWER DISSIPATION (mW)

Ambient Temperature (TA)


500 IR 400
-F
OR
WA
400 RD
I - CURRENT (mA)

CU 300
RR SOT-23
EN
300 TS
TE
AD 200
Io - A Y
VER ST
200 AGE AT
E-
REC
TIFIE mA
D CU 100
RRE
NT -
100 mA
P

0 0
0 50 100 150 0 50 100 150 200
o
TA - AMBIENT TEMPERATURE ( C) IO - AVERAGE TEMPERATURE ( oC)
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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

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