General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection
functions.
R bb + V bb
3
Voltage Overvoltage Current Gate
source protection limit protection
V Logic
Limit for OUT
Voltage Charge pump
unclamped 5
sensor Level shifter ind. loads Temperature
Rectifier sensor
2 IN
Open load
Load
ESD Logic detection
4 ST
Short circuit
detection
GND PROFET
1
Signal GND Load GND
3) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Semiconductor Group 2
BTS 442 D2
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max
Operating Parameters
Operating voltage 5) Tj =-40...+150°C: Vbb(on) 4.5 -- 42 V
Undervoltage shutdown Tj =-40...+150°C: Vbb(under) 2.4 -- 4.5 V
Undervoltage restart Tj =-40...+150°C: Vbb(u rst) -- -- 4.5 V
Undervoltage restart of charge pump Vbb(ucp) -- 6.5 7.5 V
see diagram page 12 Tj =-40...+150°C:
Undervoltage hysteresis ∆Vbb(under) -- 0.2 -- V
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown Tj =-40...+150°C: Vbb(over) 42 -- 52 V
Overvoltage restart Tj =-40...+150°C: Vbb(o rst) 42 -- -- V
Overvoltage hysteresis Tj =-40...+150°C: ∆Vbb(over) -- 0.2 -- V
Overvoltage protection 6) Tj =-40°C: Vbb(AZ) 60 -- -- V
Ibb=40 mA Tj =25...+150°C: 63 67
Standby current (pin 3) Tj=-40...+25°C: Ibb(off) -- 12 25 µA
VIN=0, IST=0, Tj=150°C: -- 18 60
Leakage output current (included in Ibb(off)) IL(off) -- 6 -- µA
VIN=0
Operating current (Pin 1)7), VIN=5 V IGND -- 1.1 -- mA
5) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V
6) see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load.
7) Add IST, if IST > 0, add IIN, if VIN>5.5 V
Semiconductor Group 3
BTS 442 D2
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)8), IL(SCp)
( max 400 µs if VON > VON(SC) )
Tj =-40°C: -- -- 140 A
Tj =25°C: -- 95 --
Tj =+150°C: 45 -- --
Repetitive short circuit current limit IL(SCr)
Tj = Tjt (see timing diagrams, page 10) 30 70 -- A
Short circuit shutdown delay after input pos. slope
VON > VON(SC), Tj =-40..+150°C: td(SC) 80 -- 400 µs
min value valid only, if input "low" time exceeds 30 µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL), IL= 30 mA VON(CL) -- 58 -- V
Short circuit shutdown detection voltage
(pin 3 to 5) VON(SC) -- 8.3 -- V
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis ∆Tjt -- 10 -- K
Inductive load switch-off energy dissipation9), EAS -- -- 2.1 J
Tj Start = 150 °C, single pulse Vbb = 12 V: ELoad12 1.7
Vbb = 24 V: ELoad24 1.2
Reverse battery (pin 3 to 1) 10) -Vbb -- -- 32 V
Integrated resistor in Vbb line Rbb -- 120 -- Ω
Diagnostic Characteristics
Open load detection current Tj=-40 °C: IL (OL) 2 -- 1900 mA
(on-condition) Tj=25..150°C: 2 -- 1500
8) Short circuit current limit for max. duration of td(SC) max=400 µs, prior to shutdown
9) While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL(t) dt, approx.
2 VON(CL)
EAS= 1/2 * L * IL * ( ), see diagram page 8
VON(CL) - Vbb
10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional
external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
Semiconductor Group 4
BTS 442 D2
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified min typ max
Status invalid after positive input slope td(ST SC) 80 200 400 µs
(short circuit) Tj=-40 ... +150°C:
Status invalid after positive input slope td(ST) 350 -- 1600 µs
(open load) Tj=-40 ... +150°C:
Status output (CMOS)
Tj =-40...+150°C, IST= - 50 µA: VST(high)12) 4.4 5.1 6.5 V
Tj =-40...+150°C, IST = +1.6 mA: VST(low) -- -- 0.4
Max. status current for current source (out): -IST -- -- 0.25 mA
valid status output, current sink (in) : +IST13) -- -- 1.6
Tj =-40...+150°C
11) If a ground resistor RGND is used, add the voltage drop across this resistor.
12) VSt high ≈ Vbb during undervoltage shutdown
13) No current sink capability during undervoltage shutdown
Semiconductor Group 5
BTS 442 D2
Truth Table
Input- Output Status
level level 442 442
D2 E2
Normal L L H H
operation H H H H
Open load L 14) H H
H H L L
Short circuit L L H H
to GND H L L L
Short circuit L H H H
to Vbb H H H (L15)) H (L15))
Overtem- L L L L
perature H L L L
Under- L L L16) H
voltage H L L16) H
Overvoltage L L L H
H L L H
L = "Low" Level
H = "High" Level
Ibb
VLogic
3
I IN
Vbb
IN ST
2 IL VON
PROFET OUT
I ST 5
ESD-
ST
4 ZD
V VST GND GND
IN
V 1 IGND
bb VOUT
R
GND
Zener diode: 6.1 V typ., max 5 mA, VLogic 5 V typ,
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
OUT
ZDI1 6.1 V typ., ESD zener diodes are not to be used Logic Short circuit
as voltage clamp at DC conditions. Operation in this unit detection
mode may result in a drift of the zener voltage
(increase of up to 1 V).
V
Z 3
V
ON
Vbb
IN
2
PROFET OUT
OUT 5
GND ST
4
GND
VON clamped to 58 V typ. V
bb
V
IN
V
ST
1 V
GND
R bb
GND disconnect with GND pull up
V
Z
R IN
IN 3
Logic Vbb
IN
V 2
OUT
ST
R ST OUT
PROFET
5
GND PROFET
ST
4
GND
R GND
1
Signal GND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
+ V bb
VON
ON
OUT
Semiconductor Group 7
BTS 442 D2
Vbb disconnect with charged inductive Inductive Load switch-off energy
load dissipation
E bb
3 E AS
high Vbb
IN ELoad
2 V bb
IN
PROFET OUT
5
PROFET OUT
ST
4
GND = ST EL
1 GND
V ER
bb
PROFET OUT
5
ST
4
GND
1
V
bb
Semiconductor Group 8
BTS 442 D2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type BTS 442D2 442E2
Logic version D E
Overtemperature protection
Tj >150 °C, latch function17)18) X
Tj >150 °C, with auto-restart on cooling X
Short-circuit to GND protection
switches off when VON>8.3 V typ.17) X X
(when first turned on after approx. 200 µs)
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across X X
power transistor
Undervoltage shutdown with auto restart X X
Overvoltage shutdown with auto restart X X
Status feedback for
overtemperature X X
short circuit to GND X X
short to Vbb -19) -19)
open load X X
undervoltage X -
overvoltage X -
Status output type
CMOS X
Open drain X
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL) X X
Load current limit
high level (can handle loads with high inrush currents) X X
medium level
low level (better protection of application)
17) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
18) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
19) Low resistance short V to output may be detected by no-load-detection
bb
Semiconductor Group 9
BTS 442 D2
Timing diagrams
Figure 1a: Vbb turn on: Figure 2b: Switching an inductive load
IN
IN
t d(bb IN)
V
bb
td(ST)
ST
*)
V
OUT
V
OUT
A
ST CMOS
I
L
t
IL(OL)
A
t
in case of too early VIN=high the device may not turn on (curve A)
td(bb IN) approx. 150 µs
*) if the time constant of load is too large, open-load-status may
occur
Figure 2a: Switching a lamp,
Figure 3a: Turn on into short circuit,
IN
IN
ST
ST
V
OUT
V
OUT
td(SC)
I
L
I
L
t
Semiconductor Group 10
BTS 442 D2
Figure 3b: Turn on into overload, Figure 4a: Overtemperature,
IN
IL
I L(SCp) ST
I L(SCr)
V
OUT
ST
T
J
t
t
Heating up may require several milliseconds,
Vbb - VOUT < 8.3 V typ.
*) ST goes high , when VIN=low and Tj<Tjt
,
Vbb - VOUT < 8.3 V typ.
IN IN
t
ST d(ST)
ST
V
V OUT OUT
I
L
IL open
**)
t
t
Semiconductor Group 11
BTS 442 D2
Figure 5b: Open load: detection in ON-state, open Figure 6b: Undervoltage restart of charge pump
load occurs in on-state VON [V]
V on VON(CL)
IN
off
t t
d(ST OL1) d(ST OL2)
ST
V
V off
bb(over)
OUT
V V
bb(u rst) bb(o rst)
Vbb [V]
td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ charge pump starts at Vbb(ucp) =6.5 V typ.
IN
IN
Vbb(u cp)
V
bb(under) Vbb(u rst)
V
OUT
V OUT
ST
ST CMOS
t
t
Semiconductor Group 12
BTS 442 D2
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5 Ordering code TO-220AB/5, Option E3043 Ordering code
BTS 442 D2 Q67060-S6205-A2 BTS 442 D2 E3043 Q67060-S6205-A3
Semiconductor Group 13