2SJ160, 2SJ161, 2SJ162

Silicon P-Channel MOS FET

November 1996

Application

Low frequency power amplifier

Complementary pair with 2SK1056, 2SK1057 and 2SK1058

Features

• Good frequency characteristic

• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
• Suitable for audio power amplifier
2SJ160, 2SJ161, 2SJ162
Outline

TO-3P

G 1
2
3
1. Gate
2. Source
(Flange)
S
3. Drain

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Drain to source voltage 2SJ160 VDSX –120 V
2SJ161 –140
2SJ162 –160
Gate to source voltage VGSS ±15 V
Drain current ID –7 A
Body to drain diode reverse drain current I DR –7 A
1
Channel dissipation Pch* 100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note 1. Value at TC = 25°C

2
 2SJ160, 2SJ161, 2SJ162
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SJ160 V(BR)DSX –120 — — V I D = –10 mA , VGS = 10 V
breakdown voltage 2SJ161 –140 — — V
2SJ162 –160 — — V
Gate to source breakdown V(BR)GSS ±15 — — V I G = ±100 µA, VDS = 0
voltage
Gate to source cutoff voltage VGS(off) –1.5 — –1.45 V I D = –100 mA, VDS = –10 V
Drain to source saturation VDS(sat) — — –12 V I D = –7 A, VGD = 0*1
voltage
Forward transfer admittance |yfs| 0.7 1.0 1.4 S I D = –3 A, VDS = –10 V*1
Input capacitance Ciss — 900 — pF VGS = 5 V, VDS = –10V,
Output capacitance Coss — 400 — pF f = 1 MHz
Reverse transfer capacitance Crss — 40 — pF
Turn-on time t on — 230 — ns VDD = –20 V, ID = –4 A
Turn-off time t off — 110 — ns
Note 1. Pulse test

3
2SJ160, 2SJ161, 2SJ162

Power vs. Temperature Derating Maximum Safe Operation Area

150 –20
Ta = 25°C
–10
Channel Dissipation Pch (W)

ID max (Continuous)
PW

Drain Current ID (A)

PW
(–14.3 V,

DC
–5 –7 A) =

=
100 10

Op

10
0

ms
m

ra
s(

tio

(1
1

n
–2

Sh
Sh

(T C

ot)
ot

=
)

25
°C
50 –1.0

)
(–120 V, –0.83 A) (–140 V, –0.71 A)
(–160 V, –0.63 A)
–0.5
2SJ160
2SJ161
2SJ162
–0.2
0 50 100 150 –5 –10 –20 –50 –100 –200 –500
Case Temperature TC (°C) Drain to Source Voltage VDS (V)

Typical Output Characteristics Typical Transfer Characteristics

–10 –1.0
TC = 25°C
VDS = –10 V

°C
–9

25
–8 –0.8

25
=–
–8
Drain Current ID (A)

Drain Current ID (A)

75
C
–7

T
–6 –0.6
–6
–5
–4 –4 –0.4
Pch
= 10
–3 0W
–2 –2 –0.2
–1 V
VGS = 0

0 –10 –20 –30 –40 –50 0 –0.4 –0.8 –1.2 –1.6 –2.0
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

Drain to Source Saturation Voltage Drain to Source Voltage vs.

Drain to Source Saturation Voltage VDS (sat) (V)

vs. Drain Current Gate to Source Voltage

–10 –10
75
VGD = 0
Drain to Source Voltage VDS (V)

5°
–5 25 C
2
=– –8
TC
–2
–6 –5
–1.0
–4
–0.5

–2 –2
–0.2
ID = –1 A

–0.1 0
–0.1 –0.2 –0.5 –1.0 –2 –5 –10 –2 –4 –6 –8 –10
Drain Current ID (A) Gate to Source Voltage VGS (V)

4
 2SJ160, 2SJ161, 2SJ162
Input Capacitance vs. Forward Transfer Admittance
Gate to Source Voltage vs. Frequency
1,000 3.0

Forward Transfer Admittance yfs (S)

Input Capacitance Ciss (pF)

1.0

500
0.3

0.1

0.03
200
VDS = –10 V 0.01 TC = 25°C
f = 1 MHz VDS = –10 V
ID = –2 A
100 0.003
0 2 4 6 8 10 10 k 30 k 100 k 300 k 1 M 3M 10 M
Gate to Source Voltage VGS (V) Frequency f (Hz)

Switching Time vs. Drain Current

500
Switching Time ton, toff (ns)

200 ton

100

50 toff

20

10

5
–0.1 –0.2 –0.5 –1.0 –2 –5 –10
Drain Current ID (A)

Switching Time Test Circuit

Waveforms
Output
RL 10%

Input Input
90%

ton toff
20 V
PW = 50 µs 90%
duty ratio 50 Ω
= 1% Output
10%

5
2SJ160, 2SJ161, 2SJ162

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other reasons during operation of the user’s unit according to this document.
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performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
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APPLICATIONS.

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