VDD = RI+V
Solution:
I = I S e v / ηVT ⎫
⎪
VDD = RI S eV / ηVT + V ⎪
⎬ Analytical solution
or RI S eV / ηVT + V − VDD = f (V ) ⎪
⎪
find root of f (V ) ⎭
Modeling the Diode Forward Characteristic
V+ − 0.5
i=
R + rD
V = 0.5 + i ⋅ rD
v D (t ) = V D + v d (t ) (1)
i D (t ) = I D + id (t ) ( 2)
i D (t ) = I S e vD / ηVT (3)
= I S e (VD + vd ( t )) / ηVT = I S eVD / ηVT ⋅ e vd ( t ) / ηVT
v d (t )
I D = I S eVD / ηVT and i d (t ) = I D
ηVT
v d ηVT 1
rd = = or id = vd
id ID rd
Ex.
Incremental
equivalent circuit
rd
∆V = ±1 ⋅
R + rd
10 − 0.7 9.3
ID = = = 0.93mA
R 10
ηV
but rd = T
ID
50
at room temperature rd = = 53.8Ω
0.93
53.8
∴ ∆V = ±1 ⋅ = ±10.7mV
53.8 + 10 × 103
i.e., a fluctuation of +1V in the DC supply results in a fluctuation of 10.7+mV in the
output. (Regulations.)
Physical Operation of Diodes
dq j
Cj =
dv at the bias po int
k
Cj =
(VO − V D ) m
V O is barrier voltage m = {1 / 3, 3}
i.e., Cj is dependent on voltage
Capacitors that have a voltage dependent capacitance are called “varactors”. They are
manufactured using pn junctions and operated in reverse bias conditions.
Forward Bias Condition