RA45H4452M
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
BLOCK DIAGRAM
The RA45H4452M is a 45-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 440- to
520-MHz range. 2 3
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
1 4
power and drain current increase as the gate voltage increases.
With a gate voltage around 4V (minimum), output power and 5
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA45H4452M-01 Antistatic tray,
10 modules/tray
All parameters, conditions, ratings, and limits are subject to change without notice.
70 70
VGG=5V
-30
HARMONICS (dBc)
INPUT VSWR ρin (-)
60 60 Pin=50mW
TOTAL EFFICIENCY
ηT
50 50 -40
40 40
ηT(%)
30 30 -50
VDD=12.5V nd
20 VGG=5V 20 2
-60
10 Pin=50mW 10
ρin 3rd
0 0 -70
430 450 470 490 510 530 430 450 470 490 510 530
FREQUENCY f(MHz) FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
60 24 60 24
DRAIN CURRENT IDD(A)
Gp
OUTPUT POWER
Gp
40 16 40 16
Pout (dBm)
Pout(dBm)
30 12 30 12
IDD
20 8 20 IDD 8
f=440MHz, f=470MHz,
10 VDD=12.5V, 4 10 VDD=12.5V, 4
VGG=5V VGG=5V
0 0 0 0
-15 -10 -5 0 5 10 15 20 -15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm) INPUT POWER Pin(dBm)
OUTPUT POWER, POWER GAIN and OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER DRAIN CURRENT versus INPUT POWER
60 24 60 24
DRAIN CURRENT IDD(A)
50 20 50 20
OUTPUT POWER
OUTPUT POWER
Gp Gp
40 16 40 16
Pout(dBm)
Pout(dBm)
30 12 30 12
20 IDD 8 20 IDD 8
f=490MHz, f=520MHz,
10 VDD=12.5V, 4 10 VDD=12.5V, 4
VGG=5V VGG=5V
0 0 0 0
-15 -10 -5 0 5 10 15 20 -15 -10 -5 0 5 10 15 20
INPUT POWER Pin(dBm) INPUT POWER Pin(dBm)
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE versus DRAIN VOLTAGE
100 20 100 20
OUTPUT POWER Pout(W)
90 f=440MHz, 18 90 f=470MHz, 18
VGG=5V, Pout VGG=5V,
DRAIN CURRENT IDD(A)
80 16 80 Pout 16
Pin=50mW Pin=50mW
70 14 70 14
60 12 60 12
50 IDD 10 50 IDD 10
40 8 40 8
30 6 30 6
20 4 20 4
10 2 10 2
0 0 0 0
2 4 6 8 10 12 14 16 2 4 6 8 10 12 14 16
DRAIN VOLTAGE VDD(V) DRAIN VOLTAGE VDD(V)
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE versus DRAIN VOLTAGE
100 20 100 20
OUTPUT POWER Pout(W)
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE versus GATE VOLTAGE
80 16 80 16
f=440MHz, f=470MHz,
OUTPUT POWER Pout(W)
OUTPUT POWER and DRAIN CURRENT OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE versus GATE VOLTAGE
80 16 80 16
f=490MHz, f=520MHz,
OUTPUT POWER Pout(W)
70 VDD=12.5V,
Pout 14 70 VDD=12.5V, Pout 14
DRAIN CURRENT IDD(A)
66.0 ±0.5
17.0 ±0.5
9.5 ±0.5
4.0 ±0.3
5
1 2 3 4
2.0 ±0.5
14.0 ±1
Ø0.45 ±0.15
12.0 ±1
16.5 ±1
43.5 ±1
55.5 ±1
3.1 +0.6/-0.4
0.09 ±0.02
7.5 ±0.5
(9.88)
2.3 ±0.3
(50.4)
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
1 2 3 4
ZG=50Ω ZL=50Ω
Signal Pre- Directional Directional Power
Attenuator Attenuator Attenuator
Generator amplifier Coupler Coupler Meter
C1 C2
- + + -
DC Power DC Power
Supply VGG Supply VDD
C1, C2: 4700pF, 22uF in parallel
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
EQUIVALENT CIRCUIT
2 3
1 4
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=45W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) - Pout
+ Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (45W/35% – 45W + 0.05W) = 0.36 °C/W
When mounting the module with the thermal resistance of 0.36 °C/W, the channel temperature of each stage
transistor is:
Tch1 = Tair + 46.5 °C
Tch2 = Tair + 90.0 °C
Tch3 = Tair + 92.4 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or property
damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as
(i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction or
mishap.
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