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Brilliance in RF Microwave
5G Sub-6 GHz
HPA, GaN 15W~25W, Internally Matched 4.4~5.0 GHz
Vd Idq S21 Psat PAE (%)
Part No. PKG
(V) (mA) (dB) (dBm) @ Psat
AGN0542D 150 32 42 53
28 Die
AGN0544D 300 30 44 50

LNA, 3.3~5.0 GHz

Vd Id S21 (dB) @ GHz OIP3 (dBm) @ GHz NF (dB) @ GHz
Part No. PKG
(V) (mA) 3.3 3.8 5.0 3.3 3.8 5.0 3.3 3.8 5.0
AHL5220T8 16 15 - 36 35 - 0.56 0.59 -
5 65 TDFN8
AHL5318T8 17 15.8 13.6 35 35 34 0.59 0.65 0.95
NF measured at connector to connector

Bypass LNA, 5.2~5.9 GHz

Vd Id S21 (dB) @ GHz OIP3 (dBm) @ GHz NF (dB) @ GHz
Part No. Mode PKG
(V) (mA) 5.2 5.9 5.2 5.9 5.2 5.9
Amp 25 17.2 15.8 28 28 1.5 1.5
ABL5616T8 5 TDFN8
Bypass 2.5 -3.5 -3.5 - - - -

Gain Block, 50~6000 MHz

Vd Id S21 (dB) @ MHz OIP3 (dBm) @ MHz NF (dB) @ MHz
Part No. PKG
(V) (mA) 50 950 6000 50 950 6000 50 950 6000
AHB3612S6 24 - 15.5 11.9 - 24.5 21.5 - 1.4 2.3 SOT363
3
AHB3612T8 23 - 15 12 - 23.5 21.2 - 1.6 2.5
AHB5614T8 14. 3 14.6 14.4 36.7 37.5 30. 2 2.5 2.5 3.4 TDFN8
5 80
AHB5616T8 15.9 16. 3 15 37. 2 37.7 27. 3 1.9 1.9 2.9

SPDT, 5~6000 MHz

Vd Insertion Loss (dB) @ MHz IP1dB IIP3 (dBm) Swit. Time Ctrl.
Part No. PKG
(V) 5 4000 6000 (dBm) @ 1 GHz (ns) Bit
AHX5406DS6 0.3 0.8 - 160 Dual
33 SOT363
AHX5406SS6 0.3 0.8 - 450 Single
3 58
AHX5607DT6 0.3 0.5 0.7 160 Dual
32 TDFN6
AHX5607ST6 0.3 0.5 0.7 450 Single

GPS High Precision

Ultra Low Noise, 1.1~1.7 GHz
Part No. Vd (V) Id (mA) Freq. (GHz) Gain (dB) NF (dB) OIP3 (dBm) PKG
1.1 19.5 / 21.9
AHL5216T8 1.8 / 3.3 10 / 35 0.45 / 0.32 18 / 29 TDFN8
1.7 15.5 / 18.2
NF measured at connector to connector

CATV 5~1800 MHz

Type Freq. (MHz) Part No.
ABU1513 (6 V), ABU1516 (5 V), ABU1519 (5 V), ASL380 (5 V), ASL390 (5 V),
5~700
Single ASL580 (8 V), ASL590 (8 V), ASW220 (5 V)
700~1800 ABU1513 (6 V), ABU1516 (5 V), ABU1519 (5 V), ABB1513 (6 V), ABB1516 (5 V), ABB1519 (5 V)
5~700 ASL39D2 (6.5 V)
Push-pull
700~1800 ASL39D2 (6.5 V), AWB31D2 (5 V / 8 V), AWB31D7 (5 V / 8 V), AWB31D9 (5 V / 8 V)

High Power, 50~1200 MHz

Vd Id S21 Pout
Part No. Test Condition PKG Remark
(V) (mA) (dB) (dBμV)
118 @ CSO, CTB = 67, 60 dBc, CENELEC-42 ch flat GaN Power
AGN922 24 485 22.5 QFN 6x6
115 BER < 1E-9, 138 ch 22 dB tilt, 256 QAM Doubler
111 @ CSO, CTB = 62, 61 dBc, 8 dB tilt, CENELEC-42 ch GaAs
ABB817 12 365 17.3 TSSOP24
109 BER < 1E-9, 138 ch 12 dB tilt, 256 QAM Push-pull

Optical TIA with AGC, 50~1200 MHz

Vd Id S21 Gain Flat. (dB) EIN Po CSO CTB MER
Part No. PKG
(V) (mA) (dB) @ 25 dB attn. (pA/rtHz) (dBμV) (dBc) (dBc) (dB)
ASA307 5 260 33 ±1 3.5 83 64 64 40 QFN 4x4

HPA GaAs, GaN

MMICs, Internally Matched
Freq. S21 Psat OIP3 PAE (%) Vd Idq
Part No. PKG
(GHz) (dB) (dBm) (dBm) @ Psat (V) (mA)
ABX0618Q 6~18 23 31 36 22 7 700 QFN 6x6
ASX1037HG 22 36 42 39
8.5~10.5 7 1300 10-lead Flange
ASX1037 15 37 42 38
AGN0942Q 7.7~10.7 23 41 - 38 24 200 QFN 6x6
AGN0944Q 18 43 - 32 QFN 6x6
AGN0944M 8.5~10 19 44 - 35 24 300 10-lead Flange
AGN0944D 19 44 - 38 Die
AGN1440 12.5~14.5 24 41 - 28 24 300 10-lead Flange
ASX1437 13.5~14.5 21 37 42 32 7 1300 10-lead Flange

GaN HP Transistor @ 30~3000 MHz

Freq. S21 P3dB Eff. (%) Vd Idq
Part No. PKG
(MHz) (dB) (W) @ P3dB (V) (mA)
30 21 10 66
AGT0510 28 60
500 18.4 10.7 55
QFN 6x6
30 20.4 10.5 67
AGT0515 28 55
500 18.3 20.8 62