Preliminary data SDT12S60

Silicon Carbide Schottky Diode

Worlds first 600V Schottky diode

Revolutionary semiconductor
Product Summary

material - Silicon Carbide VRRM 600 V

Switching behavior benchmark

Qc 30 nC

No reverse recovery
IF 12 A

No temperature influence on P-TO220-2-2.

the switching behavior

No forward recovery

Type Package Ordering Code Marking Pin 1 Pin 2 Pin 3

SDT12S60 P-TO220-2-2. Q67040-S4470 D12S60 C A

Maximum Ratings,at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit
Continuous forward current, TC=100°C IF 12 A
RMS forward current, f=50Hz I FRMS 17
Surge non repetitive forward current, sine halfwave I FSM 36
TC=25°C, tp =10ms

Repetitive peak forward current I FRM 49

Tj=150°C, TC=100°C, D=0.1

Non repetitive peak forward current I FMAX 120

tp =10µs, TC=25°C

i 2 t value, TC=25°C, tp =10ms i2dt 6.48 A²s

Repetitive peak reverse voltage VRRM 600 V
Surge peak reverse voltage VRSM 600
Power dissipation, TC=25°C Ptot 88.2 W
Operating and storage temperature T j , Tstg -55... +175 °C

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 Preliminary data SDT12S60

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 1.7 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62

Electrical Characteristics, at T j = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Diode forward voltage VF V
IF=12A, T j=25°C - 1.5 1.7
IF=12A, T j=150°C - 1.7 2.1
Reverse current IR µA
V R=600V, Tj=25°C - 40 400
V R=600V, Tj=150°C - 100 2000

Electrical Characteristics,at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Total capacitive charge Qc - 30 - nC
VR =400V, IF =12A, diF /dt=200A/µs, Tj=150°C
Switching time trr - n.a. - ns
VR =400V, IF =12A, diF /dt=200A/µs, Tj=150°C

Total capacitance C pF
VR =1V, TC =25°C, f=1MHz - 450 -
VR =300V, TC =25°C, f=1MHz - 45 -
VR =600V, TC =25°C, f=1MHz - 43 -

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 Preliminary data SDT12S60

1 Power dissipation 2 Diode forward current

Ptot = f (TC ) IF = f (TC )
parameter: Tj 175 °C
90 24

W
A

20
70
18

60 16
P tot

IF
14
50
12
40
10

30 8

6
20
4
10
2

0 0
0 20 40 60 80 100 120 140 °C 180 0 20 40 60 80 100 120 140 °C 180
TC TC

3 Typ. forward characteristic 4 Typ. forward power dissipation vs.

IF = f (VF ) average forward current
parameter: Tj , tp = 350 µs PF(AV)=f(IF ) TC =100°C, d = tp/T
24 44
W
d=0.1
A
d=0.2
150°C 36
d=0.5
125°C d=1
100°C 32
P F(AV)

16 25°C
-40°C 28
IF

24
12
20

16
8
12

4 8

0 0
0 0.5 1 1.5 V 2.5 0 2 4 6 8 10 12 A 16
VF IF(AV)

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 Preliminary data SDT12S60

5 Typ. reverse current vs. reverse voltage 6 Transient thermal impedance

IR =f(VR) ZthJC = f (tp )
parameter : D = tp /T
10 2 10 1 SDT12S60

µA K/W

150°C
10 1 125°C 10 0
100°C
25°C

Z thJC
IR

10 0 10 -1

D = 0.50
-1 -2
10 10 0.20
0.10
0.05
-2 -3 0.02
10 10 single pulse
0.01

10 -3 10 -4 -7 -6 -5 -4 -3 -2 0
100 150 200 250 300 350 400 450 500 V 600 10 10 10 10 10 10 s 10
VR tp

7 Typ. capacitance vs. reverse voltage 8 Typ. C stored energy

C= f(VR ) EC=f(VR )
parameter: TC = 25 °C, f = 1 MHz
600 9
pF µJ

500
7
450

400 6
EC
C

350
5
300
4
250

200 3

150
2
100
1
50

0 0 1 2 3 0
10 10 10 V 10 0 100 200 300 400 V 600
VR VR

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 Preliminary data SDT12S60

9 Typ. capacitive charge vs. current slope

Qc =f(diF /dt)
parameter: Tj = 150 °C
40

nC
IF *2 IF
32

28 IF *0.5
Qc

24

20

16

12

0
100 200 300 400 500 600 700 800 A/µs 1000

di F/dt

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 Preliminary data SDT12S60

TO-220-2-2
A N
P dimensions
symbol [mm] [inch]
E min max min max
D A 9.70 10.10 0.3819 0.3976
B 15.30 15.90 0.6024 0.6260
U
C 0.65 0.85 0.0256 0.0335
V
B D 3.55 3.85 0.1398 0.1516
H E 2.60 3.00 0.1024 0.1181
F 9.00 9.40 0.3543 0.3701
F
G 13.00 14.00 0.5118 0.5512
H 17.20 17.80 0.6772 0.7008
W
J 4.40 4.80 0.1732 0.1890
K 0.40 0.60 0.0157 0.0236
J L 1.05 typ. 0.41 typ.
X M 2.54 typ. 0.1 typ.
L N 4.4 typ. 0.173 typ.
G P 1.10 1.40 0.0433 0.0551
T 2.4 typ. 0.095 typ.
U 6.6 typ. 0.26 typ.
V 13.0 typ. 0.51 typ.
W 7.5 typ. 0.295 typ.
T X 0.00 0.40 0.0000 0.0157
C M
K

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 Preliminary data SDT12S60

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