Wojciech Wiatr
Institute of Electronic Systems, Warsaw University of Technology, Poland
David K. Walker and Dylan F. Williams
National Institute of Standards and Technology, Boulder, Colorado, USA
|S 11 |
S 11 ( deg)
∆X= - 100 µ m
0.08 0
0.2
0.04 -100
0
0 10 20 30 40 0 -200
Frequency (GHz) 0 10 20 30 40
Freq uency ( G H z )
Fig. 4. Frequency dependence of S32 for different via
positions along the x-axis in the structure of Fig. 2a Fig. 5 Frequency dependence of S11 for the structure
excited symmetrically and the center conductor shown in Fig. 2b.
shorted to ground.