AO4606

Complementary Enhancement Mode Field Effect Transistor

General Description Features

n-channel p-channel
The AO4606/L uses advanced trench VDS (V) = 30V -30V
technology MOSFETs to provide ID = 6.9A (VGS=10V) -6A (V GS=-10V)
excellent RDS(ON) and low gate charge. RDS(ON) RDS(ON)
The complementary MOSFETs may be < 28mΩ (VGS=10V) < 35m Ω (VGS = -10V)
used to form a level shifted high side < 42mΩ (VGS=4.5V) < 58m Ω (VGS = -4.5V)
switch, and for a host of other
applications. AO4606 and AO4606L are
electrically identical.
-RoHS Compliant
-AO4606L is Halogen Free

D2 D1

S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1 G2 G1
S2 S1
SOIC-8
n-channel p-channel

Absolute Maximum Ratings T A=25°C unless otherwise noted

Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage V GS ±20 ±20 V
Continuous Drain TA=25°C 6.9 -6
A
Current TA=70°C ID 5.8 -5 A
B
Pulsed Drain Current IDM 30 -30
TA=25°C 2 2
PD W
Power Dissipation TA=70°C 1.44 1.44
Avalanche Current B IAR 15 20 A
B
Repetitive avalanche energy 0.1mH EAR 11 20 mJ
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C

Thermal Characteristics: n-channel and p-channel

Parameter Symbol Device Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s n-ch 48 62.5 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State n-ch 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL n-ch 35 40 °C/W
A
Maximum Junction-to-Ambient t ≤ 10s p-ch 48 62.5 °C/W
A RθJA
Maximum Junction-to-Ambient Steady-State p-ch 74 110 °C/W
Maximum Junction-to-Lead C Steady-State RθJL p-ch 35 40 °C/W

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N-Channel Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=24V, VGS=0V 0.002 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 1.9 3 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 20 A
VGS=10V, ID=6.9A 22.5 28
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 31.3 38
VGS=4.5V, ID=5.0A 34.5 42 mΩ
gFS Forward Transconductance VDS=5V, ID=6.9A 10 15.4 S
VSD Diode Forward Voltage IS=1A 0.76 1 V
IS Maximum Body-Diode Continuous Current 3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 680 820 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 102 pF
Crss Reverse Transfer Capacitance 77 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.2 2 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 13.84 16.6 nC
Qg(4.5V) Total Gate Charge 6.74 8.1 nC
VGS=10V, VDS=15V, ID=6.9A
Qgs Gate Source Charge 1.82 nC
Qgd Gate Drain Charge 3.2 nC
tD(on) Turn-On DelayTime 4.6 7 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=2.2Ω, 4.1 6 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 20.6 30 ns
tf Turn-Off Fall Time 5.2 8 ns
trr Body Diode Reverse Recovery Time IF=6.9A, dI/dt=100A/µs 16.5 20 ns
Qrr Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs 7.8 10 nC
A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. RθJL and RθJC are equivalent terms referring to
thermal resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 8: Feb 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4606

N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 20
10V 6V
25 5V
16 VDS=5V
4.5V
4V
20
12
ID (A)

ID(A)
15
3.5V
8
10
125°C
VGS=3V 4
5
25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS (Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

60 1.6
VGS=10V
Normalized On-Resistance 1.5 ID=5A
50
1.4
VGS=4.5V
RDS(ON) (mΩ)

40 VGS=4.5V 1.3

1.2
30
1.1

20 1
VGS=10V
0.9
10
0 5 10 15 20 0.8
0 50 100 150 200
ID (Amps)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature ( °C)
Voltage Figure 4: On-Resistance vs. Junction Temperature

70 1.0E+01

60 1.0E+00
ID=5A
1.0E-01
50
IS Amps
RDS(ON) (mΩ)

125°C 1.0E-02
40 125°C
1.0E-03
30
25°C
1.0E-04
20 25°C
1.0E-05
10 0.0 0.2 0.4 0.6 0.8 1.0
2 4 6 8 10 VSD (Volts)
Figure 6: Body diode characteristics
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4606

N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1000
VDS=15V 900 f=1MHz
ID=6.9A VGS=0V
8 800
700

Capacitance (pF)
Ciss
VGS (Volts)

6 600
500
4 400
300
2 200 Coss
100
Crss
0 0
0 2 4 6 8 10 12 14 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge characteristics Figure 8: Capacitance Characteristics

100 40
TJ(Max)=150°C
TJ(Max)=150°C
RDS(ON) TA=25°C
TA=25°C
limited
100µs 30
10 1ms 10µs
ID (Amps)

Power W

10ms
20
0.1s

1
1s
10
10s
DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z θJA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

P-Channel Electrical Characteristics (T J=25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-24V, VGS=0V -0.003 -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.2 -2 -2.4 V
ID(ON) On state drain current VGS=-10V, VDS=-5V 30 A
VGS=-10V, ID=-6A 28 35
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 37 45
VGS=-4.5V, I D=-5A 44 58 mΩ
gFS Forward Transconductance VDS=-5V, ID=-6A 13 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.76 -1 V
IS Maximum Body-Diode Continuous Current -4.2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 920 1100 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 190 pF
Crss Reverse Transfer Capacitance 122 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3.6 4.4 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V) 18.5 22.2 nC
Qg(4.5V) Total Gate Charge (4.5V) 9.6 11.6 nC
VGS=-10V, VDS=-15V, ID=-6A
Qgs Gate Source Charge 2.7 nC
Qgd Gate Drain Charge 4.5 nC
tD(on) Turn-On DelayTime 7.7 11.5 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=2.7Ω, 5.7 8.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 20.2 30 ns
tf Turn-Off Fall Time 9.5 14 ns
trr Body Diode Reverse Recovery Time IF=-6A, dI/dt=100A/µs 20 24 ns
Qrr Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs 12.3 15 nC

2
A: The value of R θJAθJA
is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TAA =25°C. The value
in anyingiven
value any aapplication depends
given application on the user's
depends on thespecific board design.
user's specific The current
board design. rating israting
The current based is on the ton
based ≤ the
10s tthermal resistance
≤ 10s thermal rating.
resistance
B: Repetitive rating, pulse width limited by junction temperature.
rating.
C. Repetitive
B: The R θJA israting,
the sum of the
pulse thermal
width limitedimpedence
by junctionfrom junction to lead RθJL and lead to ambient. RθJL and RθJC are equivalent terms referring to
temperature.
thermal
C. The Rresistance fromof
θJA is the sum junction to drain
the thermal lead.
impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 80 µs µs pulses,
pulses, duty
duty cycle
cycle 0.5%
0.5% max.
max.
E. These tests are performed with the device mounted on 1 in22 FR-4 board with 2oz. Copper, in a still air environment with TAA=25°C. The SOA
curve provides a single pulse rating.
Rev 8: Feb 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4606

P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 30
-10V -4.5V
-6V VDS=-5V
25 -5V 25

20 20
-4V
-ID (A)

-ID(A)
15 15

-3.5V
10 10

5 5 125°C
VGS=-3V 25°C
0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

60 1.60
55 ID=-6A
Normalized On-Resistance

50 VGS=-4.5V
1.40 VGS=-10V
45
RDS(ON) (mΩ)

40
35 1.20 VGS=-4.5V
30 VGS=-10V

25
1.00
20
15
0.80
10
0 25 50 75 100 125 150 175
0 5 10 15 20 25
-ID (A) Temperature (°C)
Figure 4: On-Resistance vs. Junction
Figure 3: On-Resistance vs. Drain Current and
Temperature
Gate Voltage

80 1.0E+01

70 ID=-6A 1.0E+00

60 1.0E-01

50 125°C
RDS(ON) (mΩ)

1.0E-02
-IS (A)

125°C
40
1.0E-03
30
25°C 1.0E-04
20 25°C
1.0E-05
10
1.0E-06
0 0.0 0.2 0.4 0.6 0.8 1.0
3 4 5
6 7 8 9 10
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4606

P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1500
VDS=-15V
ID=-6A 1250
8 Ciss

Capacitance (pF)
1000
-VGS (Volts)

6
750
4
500
Coss Crss
2
250

0 0
0 4 8 12 16 20 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
40
TJ(Max)=150°C, TA=25°C TJ(Max)=150°C
TA=25°C
RDS(ON) 10µs 30
10.0 100µs
limited
Power (W)
-ID (Amps)

0.1s 1ms
20
10ms
1.0
1s 10
10s DC
0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

PD
0.1
Ton
T
Single Pulse

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd. www.aosmd.com