Abstract of the diploma project report

November 24, 2010

Hanoi, Vietnam

DESIGN, CALCULATION AND SIMULATION 3 DOF CAPACITIVE

FORCE SENSOR
Lã Xuân Hùng
Student of Mechatronics 2 Class
Institute of Mechanical
Hanoi University of Science and Technology
xuanhung.vaeco@gmail.com
ABSTRACT

This paper presents the overview of Micro Electronics Mechanical Systems and
design calculation and simulation 3 dof the capacitive force sensor process.Using the
ANSYS 12.0 software to simulation and suggest the optimum model for the
manufacturing process.

I. INTRODUCTION
Microelectromechanical systems (MEMS) are small integrated devices or
systems that combine electrical and mechanical components.
The term "MEMS" was coined around 1987, when a series of three workshops
on microdynamics and MEMS was held in July 1987 in Salt Lake City, Utah; in
November 1987 in Hyannis, Massachusetts; and in January 1988 in Princeton, New
Jersey. These workshops ushered in a new era of microdevices. Equivalent terms for
MEMS include "microsystems," which is preferred in Europe, and "micromachines,"
which is favored in Japan. MEMS is an application driven and technology limited, and
has emerged as an interdisciplinary field that involves many areas of science and
engineering.
II. WHY MEMS TECHNOLOGY
Advantages offered:
- Miniaturiation of existing devices.
- Development of new devices based on principles that do not work at lager
scale.
- Development of new tools to be interactive with the micro-world.
III. MATERIALS FOR MEMS AND APPLICATION
III.1. MEMS Market
[1] Data processing ( print devices…); [2] Transportation Sector; [3] Handheld
and Consumer Electronics Industry; [4] Biomedical Appliations; [5]Aerospace,
Defence and Homeland Security; [6]Industrial Automation and process
Control.
 III.2. Materials
There are three basic requirements of material selection for MEMS devices:
(a) Ability appopriate with manufacturing of semiconductor.
(b) Electric characterize as well as mechanical characterize.
(c) Low residual stress.
III.3. Applications of MEMS in VietNam
+ International training institute for materials science (Hanoi University of
Science and Technology).
+ Institute of materials science (Vietnam’s academy of science and technology).
+ Micro-nano Library (Vietnam national University HoChiMinh City).
IV. MEMS INDUSTRIAL CHALLENGES AND TRENDS
1) Explore new frontiers. Many new frontiers of research and application were
developing: biological research and medical instruments; nano-mems mixed
technology.
2) New materials. Besides silicon and semiconductors, many other materials can be
used for MEMS
3) Transfer the traditional useful MEMS to large scale applications to establish mass
markets. This would build up MEMS industries to support the sustained MEMS
research and development.There are two major directions:
+ Reduce the cost, raise yield and efficiency to cultivate mass market.
+ Raise system performance to meet the special needs.
4) MEMS Network. There are needs of having many different functional systems and
many similar function systems working together to perform required big tasks.
V. THEORY OF STATIC ELECTRICITY
This section to research about static electricity effects and electrostatic force
which occurs on two parallel plate as the normal force and tangential force. Since then
built a formula of displacement of the pole based on the relationship between
displacement, capacitance and force through changes in capacitance values.

A R
+ C C
D C C C D D F
V Dc D C
- C1 BC S R
C 3 f

V
p 2
p p
4 Rf
c
p F

VI. ANALYSYS FORCE SENSOR STRUCTURE

Structure:
 1. Cross beam (Fig. a))
2. Straight comb (Fig. b))
3. Cross beam as crabs (Fig. c))

C
Dầ ố Dầm
Bản Răng
m đị càng
cực lược cố
thẳ n cua
trên định
ngBản h Răng
cực lược di
dướ Cố trượt
i (a)
định (b)

Bản
cực
trên

Bản
Dầm
cực
càng
trên
cua (c)
VII. CALCULATE THE FORCE, SIMULATE THE DISPLACEMENT AND
FREQUENCY VIBRATION
Use ANSYS to calculate the moment when applied to the sensor cause the
change of voltage via structure simulation method. There by suggesting the temporary
parameter of sensor.
 VIII. THE PROCESS TECHNOLOGY USED TO MANUFACTURE THE
SENSOR
Step 1: Preparation
SOI wafer is cleaned by acetone and piranha, heated at about 150-200ºC and
coating the primer layer to improve adhesion between the wafer and the photo resist
layer.
Step 2: Process to formative the upper- surface
Spin photo resist, soft baking, exposure, rinse, hard baking.
Step 3: Deep reactive-ion etching (DRIE)
This is a highly anisotropic etch proces used to create deep, steep-sided holes
and trenches in wafers with high aspect radio 20:1.
Step 4: Evaporate metallic and wiring up to the Glass Pyrex
Step 5: Anodic Bonding
Step 6: Vapor HF acid to etch Silicon oxide layer.

Major steps for sensor fabrication process

CONCLUSION
This paper presents the overview of Micro Electronics Mechanical Systems , the
knowledge of electrostatic effect, step by step stimulation and provide structure
geometry of 3 dof capacitive force sensor. But the scheme is only stop the stage of
understanding the process of fabrication. Hopefully in the thread I will go into the
experimental fabrication of sensor to measure the force applied.
REFERENCE
[1] Nguyen Viet Hung, Nguyen Trong Giang, “Ansys và mô phỏng số trong công nghiệp phần tử hữu
hạn ”, Sciences and engineering Publishing, 2003
[2] M.H Bao, “Micro mechanical transducers: pressure sensors, Acceler-ometers and gyroscopes?,
Handbook of sensors and actuators , vol. 8” Elsevier, Amsterdam, 2000.
[3] Grant McFarland, “Microprocessor Design- A Practice Guide from Design Planning to
Manufacturing”, McGraw-Hill Publishing Companies. Inc, 2006.
[4] Phuc Hong Pham, Dzung Viet Dao, Satoshi Amava, Ryoji Kitada, Susumu Sugiyama, “Straight
movement of micro containers based on ratchet mechanisms and electrostatic comb-drive actuators ”,
Journal of Micro-mechanics and Microengineering, 2006, vol 16, p2532- 2538.