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ECE606: Solid State Devices
ECE606: Solid State Devices
Lecture 29: BJT Design (II)
Muhammad Ashraful Alam
alam@purdue.edu

Alam  ECE‐606 S09 1
Outline

1) Problems of classical transistor
2) Poly‐Si emitter
3) Short base transport
4)) High frequency response
g q y p
5) Conclusions

REF: SDF, Chapter 11 and 12

Alam  ECE‐606 S09 2
Topic Map

Equilibrium DC Small 
Small Large 
Large Circuits
signal Signal
Diode

Schottky

BJT/HBT

MOS

Alam  ECE‐606 S09 3
 Doping for Gain 

2 E i
Emitter doping:
d i As high as possible without
A hi h ibl i h
n
Dn WE i , B N E
β dc ≈ band gap narrowing
WB D p ni2, E N B
Base doping: As low as possible, without
Base doping: As low as possible without
current crowding, Early effect

NE Collector doping: Lower than base doping
Collector doping: Lower than base doping
without Kirk Effect
NB
Base Width: As thin as possible without
p
NC punch through

Alam  ECE‐606 S09 4
 How to make better Transistor

2
n
Dn WE i , B N E
β≈
WB D p ni2, E N B

Graded Base transport

Polysilicon Emitter Classical Shockley Transistor

Heterojunction Bipolar Transistor

Alam  ECE‐606 S09 5
Poly‐silicon Emitter

Base Emitter Collector

N+
N+
N‐
P+ N+
N
SiGe intrinsic base
SiGe intrinsic base Dielectric  trench
i l i h
P‐

emitter

N+

N
P
Poly‐silicon
y

Alam  ECE‐606 S09 6
 Poly‐silicon Emitter

ni2, B
I n, E =
qDn
n1 n1 ≡ (e qVBE β
− 1)
poly WB NB

N+

P
p2 p1 υ s × D p WE
vs I p , E , poly = − qυ s p2 = − qp1
D p WE + υ s

WE I p , E , si = −q ( D p WE ) p1
p1 − p2 I p , E , poly υs
I p , E , polly = − qD p = − qυ s p2 =
WE I p , E , si D p WE + υ s
p2 D p WE
= Question: Why does poly only suppress 
Question: Why does poly only suppress
p1 D p WE + υ s
the hole current, not electron current?
Alam  ECE‐606 S09 7
 Gain in Poly‐silicon Transistor
υ s × D p WE
I p , E , poly = − qp1 = I p , B , poly
D p WE + υ s

I p , E , si = −q ( D p WE ) p1

I p , B , poly υs I B , poly
=
I p , B , si D p WE + υ s I B , si

IC ⎛ I C ⎞ ⎡ I B , si ⎤ ⎛ Dn WE ni2, B N E ⎞ ⎡ D p WE + υ s ⎤
β poly = =⎜ ×
⎜ I ⎟⎟ ⎢⎢ I ⎥ ≈ ⎜⎜ ⎟× ⎢
⎟ ⎥
I B , ppolyy ⎝ B , si ⎠ ⎣ B , poly
p y ⎦
W D n 2
⎥ ⎝ B p i, E B ⎠ ⎣
N υ s ⎦
2
Dn ni , B N E 1
→ × (∵υ s << D p WE )
WB ni , E N B υ s
2

Poly suppresses base current, increases gain …
Alam  ECE‐606 S09 8
Outline

1) Problems of classical transistor
2) Poly‐Si emitter
3) Short base transport
4)) High frequency response
g q y p
5) Conclusions

Alam  ECE‐606 S09 9
How to make better Transistor

2 2
n
Dn WE i , E N E n
Dn i , B N E 1
β≈ → ×
2
WB D p ni , B N B WB ni , E N B υ s
2

Polysilicon Emitter

Graded Base transport

Graded Base transport
Classical Shockley transistor

Heterojunction bipolar transistor

Alam  ECE‐606 S09 10
Short‐base Quasi‐ballistic Transistor

n1 − n2
I n , E = − qDn = − qυth n2
WB

n2 Dn WB I n , E ,ballistic υth
= =
n1 Dn WB + υth I n , E , si Dn WB + υth

n1 n2
Δn υth
N+

Alam  ECE‐606 S09 11
 Gain in short‐base Poly‐silicon Transistor

I p , B , poly υs I B , poly I n , E ,ballistic υth

= =
I p , B , si D p WE + υ s I B , si I n , E , si Dn WB + υth

I C ,ballistic ⎡ I C ,ballistic ⎤ ⎡ I C , si ⎤ ⎡ I B , si ⎤
β poly ,ballistic = =⎢ ⎥×⎢ ⎥×⎢ ⎥
I B , poly ⎢⎣ I C , si ⎥⎦ ⎢⎣ I B , si ⎥⎦ ⎢⎣ I B , poly ⎥⎦

⎡ υth ⎤ ⎡ Dn WE ni2,B N E ⎤ ⎡ D p WE + υ s ⎤
≈⎢ ⎥×⎢ ⎥×⎢ ⎥
D W + υ W D n 2
⎣ n B th ⎦ ⎣⎢ B p i , E B ⎦⎥ ⎣
N υ s ⎦

ni2,B N E υth
→ × ×
ni2,E N B υs

Quasi-Ballistic transport in very short base limits the gain …

12
Outline

1) Problems of classical transistor
2) Poly‐Si emitter
3)) Short base transport
p
4) High frequency response
5) Conclusions

Alam  ECE‐606 S09 13
Topic Map

Equilibrium DC Small 
Small Large 
Large Circuits
signal Signal
Diode

Schottky

BJT/HBT

MOS

Alam  ECE‐606 S09 14
Small Signal Response 

log10 β

IC
B IB P+
ωβ
N VEC β (ω ) ≈ β DC
VEB
(out) ω
P
(in)

E E 1 log10 f
fβ fT

1⎡ WB2 WBC ⎤ k BT
=⎢ + ⎥+ ⎡⎣C j , BC + C j , BE ⎤⎦
2π fT ⎣ 2 Dn 2υ sat ⎦ qII C

Alam  ECE‐606 S09 15
 Small Signal Response (Common Emitter)
Cμ
Cμ
C IB
P+ IC IR αF IF − αRIR
B IB
N VEC Cπ rπ Cπ
gmVBE
VEB
(in)
P (out)
(1 − α F ) I F
E E

1 dI B d ⎡⎣(1 − α F ) I F ⎤⎦ qI B 1 qI C
= = = =
rπ dVBE dVBE k BT β DC k BT
I F = I F 0 ( e qVBE / kT − 1) d (α F I F ) qI C
gm = =
dVBE k BT
δ (α F I F ) = g mδ VBE = g mυ BE
Alam  ECE‐606 S09 16
Short Circuit Current Gain

iC g mυ BE + jωCμυCB
β( f ) = =
B Cμ C iB ⎛ 1 ⎞
⎜ υ BE + jωCπυ BE ⎟ + jωCμυ BC
⎝ rπ ⎠
rπ Cπ
g mυ BE g m − jωT Cμ gm
β ( fT ) ≡ 1 = ≈
⎛1 ⎞ jωT ( Cπ + Cμ )
⎜ + jωT π ⎟ + jωCμ
C
E ⎝ rπ ⎠

Cπ + Cμ
1
ωT
≡
1
2π fT
=
gm
=
k BT
qI C
( C j , BC + C j , BE ) +
k BT
qI C
( Cd , BC + Cd , BE )

k BT Cd , BC dQB
Cd , BC = =
qI C dI C dVBE dI C
Alam  ECE‐606 S09 17
Base Transit Time
Ref. Charge control model
Δn n1

N+

1 P
q n1WB 2
dQB QB 2 WB
= = =
dI C IC n1 2 D
q n
WB

Alam  ECE‐606 S09 18
Collector Transit Time

N+

P
WBC
τ= ?
υ sat

i
τ
t

q τ WBC 1
× i ×τ = q
τ eff , BC = = =
i 2 2υ sat 2

Alam  ECE‐606 S09 19
 Putting the Terms Together
Collector transit time
(slide 19) 
log10 fT Ki k C
Kirk Current B
Base transit time 
t it ti
(slide 18)

1 ⎡ WB2 WBC ⎤
=⎢ + ⎥+
2π fT ⎣ 2 Dn 2υ sat ⎦
k BT
⎡⎣C j , BC + C j , BE ⎤⎦
qI C
IK l 10 I C
log
Junction charging time (slide 17)

Do you see the motivation to reduce WB and W
D th ti ti t d WB d WBC as much as possible? 
h ibl ?
What problem would you face if you push this too far ? 
Alam  ECE‐606 S09 20
High Frequency Metrics

(current‐gain cutoff frequency, fT)
WB2 WBC k BT q
τ=
1
= +
2π fT 2 Dn 2υ sat
+
IC
( C j , BE + C j , BC ) + ( Rex + Rc ) Ccb

(
(power‐gain cutoff frequency, f
i t ff f fmax)
fT
fmax =
8π Rbb Ccbi

Alam  ECE‐606 S09 21
Summary
We have discussed various modifications of the classical BJTs 
p y p p
and explained why improvement of performance has become 
so difficult in recent years.

The small signal analysis illustrates the importance of reduced 
junction capacitance, resistances, and transit times. 

Classical homojunctions BJTs can only go so far, further 
improvement is possible with heterojunction bipolar 
improvement is possible with heterojunction bipolar
transistors. 

Alam  ECE‐606 S09 22
Aside: 

On Base‐Collector  Breakdown 
V lt
Voltages

Alam  ECE‐606 S09 23
 Essence of Current Gain 
C

P+ IC
B IB
VEC
N
(out)
VBE
VEB P VBC
(in)

E E

Input Response Input

2

( − 1)
2 n
qDn i , B qVBE β
( − 1)
qD p n
IB ≈ i, E
e qVBE β IE ≈ e
WE N E WB N B
Response
Alam  ECE‐606 S09 24
Collector Breakdown (Common Base, Fixed IE)

IE
P+
N
P
VBE
VEB VCB
IB

(in) (out)

Common Base
(IE fixed, IB variable)

Alam  ECE‐606 S09 25
 Collector Breakdown (Common Emitter)  C

B IB P+ IC
N VEC
VEB P (out)
VBE (in)
E E

Common Emitter
(IE variable, I
i bl IB fixed)
fi d)

Common emitter breakdown voltage is smaller

th common base
than b s breakdown
b kd voltage.
lt

Alam  ECE‐606 S09 26