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ECE606: Solid State Devices

ECE606: Solid State Devices
Lecture 30: Heterojunction Bipolar Transistor (I)
Muhammad Ashraful Alam/Mark Lundstrom
M h d A h f l Al /M k L d
alam@purdue.edu

Alam  ECE‐606 S09 1
Outline

1. Introduction
2. Equilibrium solution for heterojunction
3. Types of heterojunctions
yp j
4. Conclusions

“Heterostructure Fundamentals,” by Mark    Lundstrom, Purdue 
University, 1995. 

Herbert Kroemer, “Heterostructure bipolar transistors and integrated 
circuits,” Proc. IEEE , 70, pp. 13‐25, 1982.

Alam  ECE‐606 S09 2
 How to make a better Transistor

ni2, B N E υthh Graded Base transport

Graded Base transport
β poly ,ballistic → × ×
ni2, E N B υs

Polysilicon Emitter

Heterojunction bipolar transistor

2 − Eg , B β
n N C , B NV , B e ( Eg , E − Eg , B ) β
i, B
2
= − Eg , E β
≈e
n i, E N C , E NV , E e

Emitter bandgap > Base Bandgap

Emitter bandgap > Base Bandgap

Alam  ECE‐606 S09 3
 Heterojunction  Bipolar Transistors

i) Wide gap Emitter HBT

p+
n n
base n+
emitter collector
EG1>EG2 EG2 EG2

ii) Double Heterojunction Bipolar Transistor

p+
n n
base n+
emitter collector
EG1>EG2 EG2 EG3>EG2
Alam  ECE‐606 S09 4
Mesa HBTs

p+
n n
base n+
emitter collector
EG1>EG2 EG2 EG3>EG2

Mesa HBT
n
p+ base
n‐collector
ll
n+

semi‐insulating substrate
i i l ti bt t

Alam  ECE‐606 S09 5
 Applications

1)) Optical fiber communications
p
‐40Gb/s…….160Gb/s
2) Wideband, high‐resolution DA/AD converters
and digital frequency synthesizers
‐military radar and communications
3) Monolithic, millimeter‐wave IC’s (MMIC’s)
‐front ends for receivers and transmitters

future need for transistors with 1 THz power‐gain cutoff freq.

Alam  ECE‐606 S09 6
Background

A heterojunction bipolar transistor

Kroemer
Kroemer 

Schokley realized that HBT is possible, but Kroemer really 
provided the foundation of the field and worked out the details
provided the foundation of the field and worked out the details.

Alam  ECE‐606 S09 7
Outline

1. Introduction
2 Equilibrium solution for heterojunction
2. Equilibrium solution for heterojunction
3. Types of heterojunctions
4. Conclusions

Alam  ECE‐606 S09 8
Topic Map

Equilibrium DC Small 
Small Large 
Large Circuits
signal Signal
Diode

Schottky

BJT/HBT

MOS

Alam  ECE‐606 S09 9
Bandgaps and Lattice Matching

Alam  ECE‐606 S09 10
 Band Diagram at Equilibrium

∇ • D = q ( p − n + N D+ − N A− ) Equilibrium
∂n 1
= ∇ • J N − rN + g N
∂t q

J N = qqnμ N E + qqDN ∇n DC  dn/dt=0

/
Small signal dn/dt ~ jωtn 
∂p 1 Transient ‐‐‐ Charge control model
= ∇ • J P − rP + g P
∂t q
J P = qp μ P E − qDP ∇p

Alam  ECE‐606 S09 11
N‐Al0.3Ga0.7As: p‐GaAs (Type‐I Heterojunction)

ND NA

Vacuum Level
Vacuum Level

χ2
χ1 EC

EF EG ≈ 1.42 eV
EV
EG ≈ 1.80 eV

Ab t j ti HBT
Abrupt junction HBT

Alam  ECE‐606 S09 12
Built‐in Potential: Boundary Condition @Infinity 
Δ1 + χ1 + qVbi = Eg ,2 − Δ 2 + χ 2

qVbi
χ2
χ1 EC
Eg,2
EF Δ1
Δ2 EV

qVbi = Eg ,2 − Δ 2 − Δ1 + χ 2 − χ1

N AND
= k BT ln − Eg ,2 / k B T
+ ( χ 2 − χ1 )
NV ,2 NC ,1e
Alam  ECE‐606 S09 13
Interface Boundary Conditions

E field
E‐field

Position
xn xp

κ1ε 0 E ( 0 ) = κ 2ε 0 E ( 0
− +
)
dV dV
κ1ε 0 = κ 2ε 0
dx 0− dx 0+

Alam  ECE‐606 S09 14
 Analytical Solution for Heterojunctions

Charge
E ( 0− ) =
qN D xn
xn xp ks , E ε 0
x
E (0 )=
+
qN A x p
k s , Bε 0
E‐field
⇒ N D xn = N A x p
x
E ( 0− ) xn E ( 0+ ) x p
Vbi = +
Potential 2 2
2
qN D xn 2 qN A x p
x = +
2 k s , E ε 0 2 k s , Bε 0

Alam  ECE‐606 S09 15
 Base Emitter Depletion Region

ND NA
xn xp

2ε 0 κ s , Eκ s , B N B
N E xn , BE = N B x p , BE xn = Vbi
q N E (κ s , E N B + κ s , B N E )

Vbi =
qN E xn , BE 2
+
qN B x p , BE 2 2ε 0 κ s , Eκ s , B N E
xp = Vbi
2κ s , Eε 0 2κ s , Bε 0 q N B (κ s , E N B + κ s , B N E )

Alam  ECE‐606 S09 16
Outline

1. Introduction
2 Equilibrium solution for heterojunction
2. Equilibrium solution for heterojunction
3. Types of heterojunctions
4. Conclusions

Alam  ECE‐606 S09 17
P‐Al0.3Ga0.7As : n‐GaAs (Type I junctions)

E0 Vacuum level

χ1 qV (x) qVBI

EC El
V jP
EG ≈ 1.80
1 80 eV
V ΔEC χ2
V jn
EF EC
EV
EG ≈ 1.42 eV

ΔEV EV

Depletion layer Depletion layer 18
Alam  ECE‐606 S09
(AlInAs/InP) Type II Junctions

ND NA

Vacuum level
Vacuum level

χ2
χ1 EC
EF
EV

Alam  ECE‐606 S09 19
N‐Al0.3Ga0.7As : n‐GaAs  Junctions

‘Isotype Heterojunction’

EC EC
EG ≈ 1.42 E
eV
V

EG ≈ 1.80 eV EV

EV
Depletion Layer Accumulation Layer

Metal-Metal junctions have similar features …

Alam  ECE‐606 S09 20
 P‐GaSb : n‐InAs (Type III) 

E0 Field‐free vacuum level

χ1

EC
χ2
EG ≈ 0.72
0 72 eV
V
E FP
EV

EC
E Fn
EG ≈ 0.36 eV
EV
Alam  ECE‐606 S09 21
 P‐GaSb : n‐InAs (Type III) 

EC ΔEC = 0.87 eV
EG ≈ 0.72 eV
EF EC
EV EG ≈ 0.36 eV
EV

Accumulation Layer! Accumulation Layer!

Alam  ECE‐606 S09 22
 Conclusion

1. Heterojunction transistors offer a solution to the 
limitations of poly Si bipolar transistors
limitations of poly‐Si bipolar transistors. 

2. Equilibrium solutions for HBTs are very similar to those of 
normal BJTs. 

3. Depending
Depending on the alignment, there could be different 
on the alignment, there could be different
types of heterojuctions.  Each has different usage. 

4 We will discuss current transport in HBTs in the next class. 
4. We will discuss current transport in HBTs in the next class

Alam  ECE‐606 S09 23