TM
CoolMOS Power Transistor
Product Summary
Features
V DS 600 V
• Worldwide best R ds,on in TO247
R DS(on),max 0.045 Ω
• Ultra low gate charge
Q g,typ 150 nC
• Extreme dv/dt rated
PG-TO247-3
• CCM PFC
T C=100 °C 38
Thermal characteristics
Static characteristics
V DS=600 V, V GS=0 V,
Zero gate voltage drain current I DSS - - 25 µA
T j=25 °C
V DS=600 V, V GS=0 V,
- tbd -
T j=150 °C
V GS=10 V, I D=44 A,
Drain-source on-state resistance R DS(on) - 0.04 0.045 Ω
T j=25 °C
V GS=10 V, I D=44 A,
- 0.11 -
T j=150 °C
Dynamic characteristics
Fall time tf - 10 -
Reverse Diode
V GS=0 V, I F=44 A,
Diode forward voltage V SD - 0.9 1.2 V
T j=25 °C
1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
4)
C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS.
5)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
500 103
limited by on-state
resistance
400
1
10µsµs
102 100 µs
300
I D [A]
P tot [W]
1 ms
200
101
DC 10 ms
100
100
0
100 101 102 103
0 40 80 120 160
T C [°C]
V DS [V]
100 250
10 V 8 V
20 V
7V
200
0.5
10-1
150
Z thJC [K/W]
0.2
I D [A]
6V
0.1
0.05 100
-2 5.5 V
10
0.02
0.01 5V
single pulse 50
4.5 V
10-3 0
10-6 10-5 10-4 10-3 10-2 10-1 100 0 5 10 15 20
t p [s] V DS [V]
140 0.16
8V
7V 5.5 V
5V
10 V
120
6V
6V 6.5 V
20 V
0.12 7V
100
5.5 V
20 V
R DS(on) [Ω]
80
I D [A]
0.08
60 5V
40
4.5 V 0.04
20
0 0
0 5 10 15 20 0 20 40 60 80 100
V DS [V] I D [A]
0.12 320
25 °C
280
0.1
240
0.08
200
R DS(on) [Ω]
I D [A]
0.06 160
98 %
150 °C
typ 120
0.04
80
0.02
40
0 0
-60 -20 20 60 100 140 180 0 2 4 6 8 10
T j [°C] V GS [V]
12 103
10
8 120 V 102
150 °C 25 °C 150 °C, 98%
400 V
V GS [V]
I F [A]
6
25 °C, 98%
4 101
0 100
0 50 100 150 0 0.5 1 1.5 2
Q gate [nC] V SD [V]
2000 700
1500 660
V BR(DSS) [V]
E AS [mJ]
1000 620
500 580
0 540
20 60 100 140 180 -60 -20 20 60 100 140 180
T j [°C] T j [°C]
105 50
104 Ciss 40
103 30
E oss [µJ]
C [pF]
Coss
102 20
101 Crss
10
100 0
0 50 100 150 200 0 100 200 300 400 500 600
V DS [V] V DS [V]
PG-TO247-3: Outline
Dimensions in mm
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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