BC556B, BC557A, B, C,

BC558B

Amplifier Transistors
PNP Silicon

Features http://onsemi.com

• Pb−Free Packages are Available*

COLLECTOR
1

MAXIMUM RATINGS 2
BASE
Rating Symbol Value Unit
Collector - Emitter Voltage VCEO Vdc
BC556 −65 3
BC557 −45 EMITTER
BC558 −30
Collector - Base Voltage VCBO Vdc
BC556 −80
BC557 −50
BC558 −30
TO−92
Emitter - Base Voltage VEBO −5.0 Vdc CASE 29
STYLE 17
Collector Current − Continuous IC −100 mAdc
Collector Current − Peak ICM −200
12 1
Base Current − Peak IBM −200 mAdc 2
3 3
Total Device Dissipation @ TA = 25°C PD 625 mW STRAIGHT LEAD BENT LEAD
Derate above 25°C 5.0 mW/°C BULK PACK TAPE & REEL
AMMO PACK
Total Device Dissipation @ TC = 25°C PD 1.5 W
Derate above 25°C 12 mW/°C
MARKING DIAGRAM
Operating and Storage Junction TJ, Tstg −55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit BC
55xx
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W
AYWW G
Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.

xx = 6B, 7A, 7B, 7C, or 8B

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)

ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007 1 Publication Order Number:

March, 2007 − Rev. 3 BC556B/D
 BC556B, BC557A, B, C, BC558B

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage V(BR)CEO V
(IC = −2.0 mAdc, IB = 0) BC556 −65 − −
BC557 −45 − −
BC558 −30 − −
Collector −Base Breakdown Voltage V(BR)CBO V
(IC = −100 mAdc) BC556 −80 − −
BC557 −50 − −
BC558 −30 − −
Emitter −Base Breakdown Voltage V(BR)EBO V
(IE = −100 mAdc, IC = 0) BC556 −5.0 − −
BC557 −5.0 − −
BC558 −5.0 − −
Collector−Emitter Leakage Current ICES
(VCES = −40 V) BC556 − −2.0 −100 nA
(VCES = −20 V) BC557 − −2.0 −100
BC558 − −2.0 −100
(VCES = −20 V, TA = 125°C) BC556 − − −4.0 mA
BC557 − − −4.0
BC558 − − −4.0
ON CHARACTERISTICS
DC Current Gain hFE −
(IC = −10 mAdc, VCE = −5.0 V) A Series Device − 90 −
B Series Devices − 150 −
C Series Devices − 270 −
(IC = −2.0 mAdc, VCE = −5.0 V) BC557 120 − 800
A Series Device 120 170 220
B Series Devices 180 290 460
C Series Devices 420 500 800
(IC = −100 mAdc, VCE = −5.0 V) A Series Device − 120 −
B Series Devices − 180 −
C Series Devices − 300 −
Collector −Emitter Saturation Voltage VCE(sat) V
(IC = −10 mAdc, IB = −0.5 mAdc) − −0.075 −0.3
(IC = −10 mAdc, IB = see Note 1) − −0.3 −0.6
(IC = −100 mAdc, IB = −5.0 mAdc) − −0.25 −0.65
Base −Emitter Saturation Voltage VBE(sat) V
(IC = −10 mAdc, IB = −0.5 mAdc) − −0.7 −
(IC = −100 mAdc, IB = −5.0 mAdc) − −1.0 −
Base−Emitter On Voltage VBE(on) V
(IC = −2.0 mAdc, VCE = −5.0 Vdc) −0.55 −0.62 −0.7
(IC = −10 mAdc, VCE = −5.0 Vdc) − −0.7 −0.82
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product fT MHz
(IC = −10 mA, VCE = −5.0 V, f = 100 MHz) BC556 − 280 −
BC557 − 320 −
BC558 − 360 −
Output Capacitance Cob − 3.0 6.0 pF
(VCB = −10 V, IC = 0, f = 1.0 MHz)
Noise Figure NF dB
(IC = −0.2 mAdc, VCE = −5.0 V, BC556 − 2.0 10
RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz) BC557 − 2.0 10
BC558 − 2.0 10
Small−Signal Current Gain hfe −
(IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC557 125 − 900
A Series Device 125 − 260
B Series Devices 240 − 500
C Series Devices 450 − 900
1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −11 mAdc, VCE = −1.0 V.

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 BC556B, BC557A, B, C, BC558B

BC557/BC558

2.0 −1.0
TA = 25°C
hFE , NORMALIZED DC CURRENT GAIN

1.5 VCE = −10 V −0.9

TA = 25°C −0.8 VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)
1.0 −0.7
−0.6 VBE(on) @ VCE = −10 V
0.7
−0.5
0.5 −0.4
−0.3

0.3 −0.2
−0.1 VCE(sat) @ IC/IB = 10

0.2 0
−0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages

−2.0 1.0
VCE , COLLECTOR−EMITTER VOLTAGE (V)

TA = 25°C θVB , TEMPERATURE COEFFICIENT (mV/ °C) −55°C to +125°C

1.2
−1.6

1.6
−1.2
2.0
IC = IC = −50 mA IC = −200 mA
−0.8
−10 mA
2.4
IC = −100 mA
IC = −20 mA
−0.4
2.8

0
−0.02 −0.1 −1.0 −10 −20 −0.2 −1.0 −10 −100
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 3. Collector Saturation Region Figure 4. Base−Emitter Temperature Coefficient

T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)

10 400
Cib 300
7.0
TA = 25°C 200
C, CAPACITANCE (pF)

5.0 150 VCE = −10 V

TA = 25°C
Cob 100
3.0
80
60
2.0
40
30

1.0 20
f,

−0.4 −0.6 −1.0 −2.0 −4.0 −6.0 −10 −20 −30 −40 −0.5 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)

Figure 5. Capacitances Figure 6. Current−Gain − Bandwidth Product

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 BC556B, BC557A, B, C, BC558B

BC556
−1.0
hFE , DC CURRENT GAIN (NORMALIZED)

TJ = 25°C
VCE = −5.0 V
TA = 25°C −0.8
VBE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)
2.0
−0.6
VBE @ VCE = −5.0 V
1.0
−0.4
0.5

−0.2
0.2 VCE(sat) @ IC/IB = 10

0
−0.1 −0.2 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 7. DC Current Gain Figure 8. “On” Voltage

VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

−2.0 −1.0

θVB, TEMPERATURE COEFFICIENT (mV/ °C)

−1.6 −1.4
IC = −20 mA −50 mA −100 mA −200 mA
−1.2 −10 mA −1.8
qVB for VBE
−55°C to 125°C
−0.8 −2.2

−0.4 −2.6

TJ = 25°C
0 −3.0
−0.02 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 9. Collector Saturation Region Figure 10. Base−Emitter Temperature Coefficient

40
T CURRENT−GAIN − BANDWIDTH PRODUCT

VCE = −5.0 V
TJ = 25°C 500
20 Cib
C, CAPACITANCE (pF)

200

10 100
8.0
6.0 50
Cob
4.0
20
f,

2.0
−0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −1.0 −10 −100
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 11. Capacitance Figure 12. Current−Gain − Bandwidth Product

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 BC556B, BC557A, B, C, BC558B

1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED)
0.2
r(t), TRANSIENT THERMAL

0.3
0.2 SINGLE PULSE
0.05 ZqJC(t) = (t) RqJC
0.1
0.1 RqJC = 83.3°C/W MAX
P(pk)
SINGLE PULSE ZqJA(t) = r(t) RqJA
0.07
RqJA = 200°C/W MAX
0.05 t1
D CURVES APPLY FOR POWER
0.03 t2 PULSE TRAIN SHOWN
DUTY CYCLE, D = t1/t2 READ TIME AT t1
0.02
TJ(pk) − TC = P(pk) RqJC(t)
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10
t, TIME (ms)

Figure 13. Thermal Response

−200
1s 3 ms
IC, COLLECTOR CURRENT (mA)

−100
The safe operating area curves indicate IC−VCE limits of the
TA = 25°C TJ = 25°C transistor that must be observed for reliable operation. Collector
−50
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA is
BC558 variable depending upon conditions. Pulse curves are valid for
BC557 duty cycles to 10% provided T J(pk) ≤ 150°C. TJ(pk) may be
−10
BC556 calculated from the data in Figure 13. At high case or ambient
−5.0 temperatures, thermal limitations will reduce the power than can
BONDING WIRE LIMIT
be handled to values less than the limitations imposed by second
THERMAL LIMIT
breakdown.
SECOND BREAKDOWN LIMIT
−2.0
−1.0 −5.0 −10 −30 −45 −65 −100
VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 14. Active Region − Safe Operating Area

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 BC556B, BC557A, B, C, BC558B

ORDERING INFORMATION
Device Package Shipping†
BC556BG TO−92 5000 Units / Bulk
(Pb−Free)

BC556BZL1G TO−92 2000 / Ammo Box

(Pb−Free)

BC557AZL1G TO−92 2000 / Ammo Box

(Pb−Free)

BC557BG TO−92 5000 Units / Bulk

(Pb−Free)

BC557BRL1 TO−92 2000 / Tape & Reel

BC557BRL1G TO−92 2000 / Tape & Reel
(Pb−Free)

BC557BZL1G TO−92
2000 / Ammo Box
(Pb−Free)

BC557CG TO−92 5000 Units / Bulk

(Pb−Free)

BC557CZL1G TO−92 2000 / Ammo Box

(Pb−Free)

BC558BRLG TO−92 2000 / Tape & Reel

(Pb−Free)

BC558BRL1G TO−92 2000 / Tape & Reel

(Pb−Free)

BC558BZL1G TO−92 2000 / Ammo Box

(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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 BC556B, BC557A, B, C, BC558B

PACKAGE DIMENSIONS

TO−92 (TO−226)
CASE 29−11
ISSUE AM

NOTES:
A B STRAIGHT LEAD 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
BULK PACK 2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
D G 0.045 0.055 1.15 1.39
X X
H 0.095 0.105 2.42 2.66
G J 0.015 0.020 0.39 0.50
H J K 0.500 −−− 12.70 −−−
L 0.250 −−− 6.35 −−−
V C N 0.080 0.105 2.04 2.66
P −−− 0.100 −−− 2.54
SECTION X−X R 0.115 −−− 2.93 −−−
1 N V 0.135 −−− 3.43 −−−

NOTES:
A B BENT LEAD 1. DIMENSIONING AND TOLERANCING PER
R
TAPE & REEL ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
AMMO PACK 3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
P AND BEYOND DIMENSION K MINIMUM.
T
SEATING MILLIMETERS
PLANE K
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D D 0.40 0.54
X X G 2.40 2.80
G J 0.39 0.50
J K 12.70 −−−
N 2.04 2.66
V P 1.50 4.00
C
R 2.93 −−−
SECTION X−X V 3.43 −−−
1 N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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7