TM
FRFET
FQA13N50CF
500V N-Channel MOSFET
Features Description
• 15A, 500V, RDS(on) = 0.48Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
• Low gate charge (typical 43 nC)
DMOS technology.
• Low Crss (typical 20pF)
This advanced technology has been especially tailored to mini-
• Fast switching mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
• 100% avalanche tested
commutation mode. These devices are well suited for high effi-
• Improved dv/dt capability ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
• Fast recovery body diode (typical 100ns)
D
!
"
! "
G! "
"
TO-3P
FQA Series !
G D S S
Thermal Characteristics
Symbol Parameter Typ Max Units
RθJC Thermal Resistance, Junction-to-Case -- 0.58 °C/W
RθJS Thermal Resistance, Case-to-Sink Typ. 0.24 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W
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FQA13N50CF Rev. A
FQA13N50CF 500V N-Channel MOSFET
Typical Performance Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
1
7.0 V 1
10 6.0 V 10
150°C
5.5 V
5.0 V
Bottom : 4.5 V
-55°C
25°C
0 0
10 10
Notes :
1. 250탎 Pulse Test Notes :
2. TC = 25°C 1. VDS = 40V
2. 250µs Pulse Test
-1
10
-1 10
-1 0 1 2 4 6 8 10
10 10 10
1.5
Drain-Source On-Resistance
1
10
VGS = 10V
RDS(ON) [Ω],
1.0
0
10
VGS = 20V
150°C
0.5 Notes :
25°C 1. VGS = 0V
Note : TJ = 25°C
2. 250µs Pulse Test
-1
10
0 5 10 15 20 25 30 35 0.2 0.4 0.6 0.8 1.0 1.2 1.4
ID, Drain Current [A] VSD, Source-Drain voltage [V]
12
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd VDS = 100V
Crss = Cgd 10
2500 VDS = 250V
VGS, Gate-Source Voltage [V]
Ciss
VDS = 400V
2000 8
Capacitance [pF]
Coss
1500 6
1000 Notes ; 4
1. VGS = 0 V
Crss 2. f = 1 MHz
500 2
Note : ID = 15A
0
-1 0 1 0
10 10 10
0 10 20 30 40 50
VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]
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FQA13N50CF Rev. A
FQA13N50CF 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
1.2 3.0
Drain-Source Breakdown Voltage
2.5
Drain-Source On-Resistance
1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)
2.0
1.0 1.5
1.0
0.9 Notes :
1. VGS = 0 V Notes :
0.5
2. ID = 250 µA 1. VGS = 10 V
2. ID = 7.5 A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Figure 9-1. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
16
Operation in This Area
2 is Limited by R DS(on)
10 14
10 µs
12
ID, Drain Current [A]
100 µs
ID, Drain Current [A]
1
1 ms 10
10
10 ms
100 ms 8
DC
6
0
10
Notes : 4
1. TC = 25°C
2. TJ = 150°C
2
3. Single Pulse
-1
10 0
0 1 2 3
10 10 10 10 25 50 75 100 125 150
0
10
D = 0 .5
(t), Thermal Response
0 .2 N o te s :
10
-1 1 . Z θ J C ( t) = 0 .5 8 ° C /W M a x .
0 .1 2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C ( t)
0 .0 5
PDM
0 .0 2
t1
0 .0 1
θJC
t2
s i n g le p u ls e
Z
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ]
4 www.fairchildsemi.com
FQA13N50CF Rev. A
FQA13N50CF 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd
DUT
3mA
Charge
RL VDS
VDS 90%
VGS VDD
RG
10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off
L BVDSS
1
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)
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FQA13N50CF Rev. A
FQA13N50CF 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT +
VDS
I SD
L
Driver
RG
Same Type
as DUT VDD
IRM
VSD VDD
Body Diode
Forward Voltage Drop
6 www.fairchildsemi.com
FQA13N50CF Rev. A
FQA13N50CF 500V N-Channel MOSFET
Mechanical Dimensions
TO-3P
15.60 ±0.20
4.80 ±0.20
13.60 ±0.20
3.80 ±0.20
ø3.20 ±0.10 +0.15
9.60 ±0.20 1.50 –0.05
18.70 ±0.20
12.76 ±0.20
19.90 ±0.20
23.40 ±0.20
13.90 ±0.20
2.00 ±0.20
3.50 ±0.20
3.00 ±0.20
16.50 ±0.30
+0.15
0.60 –0.05
5.45TYP 5.45TYP
[5.45 ±0.30] [5.45 ±0.30]
Dimensions in Millimeters
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FQA13N50CF Rev. A
FQA13N50CF 500V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
ACEx™ FAST® IntelliMAX™ POP™ SPM™
ActiveArray™ FASTr™ ISOPLANAR™ Power247™ Stealth™
Bottomless™ FPS™ LittleFET™ PowerEdge™ SuperFET™
CoolFET™ FRFET™ MICROCOUPLER™ PowerSaver™ SuperSOT™-3
CROSSVOLT™ GlobalOptoisolator™ MicroFET™ PowerTrench® SuperSOT™-6
DOME™ GTO™ MicroPak™ QFET® SuperSOT™-8
EcoSPARK™ HiSeC™ MICROWIRE™ QS™ SyncFET™
E2CMOS™ I2C™ MSX™ QT Optoelectronics™ TinyLogic®
EnSigna™ i-Lo™ MSXPro™ Quiet Series™ TINYOPTO™
FACT™ ImpliedDisconnect™ OCX™ RapidConfigure™ TruTranslation™
FACT Quiet Series™ OCXPro™ RapidConnect™ UHC™
OPTOLOGIC® µSerDes™ UltraFET®
Across the board. Around the world.™
OPTOPLANAR™ SILENT SWITCHER® UniFET™
The Power Franchise®
PACMAN™ SMART START™ VCX™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, 2. A critical component is any component of a life support device
(a) are intended for surgical implant into the body, or (b) support or system whose failure to perform can be reasonably expected
or sustain life, or (c) whose failure to perform when properly used to cause the failure of the life support device or system, or to
in accordance with instructions for use provided in the labeling, affect its safety or effectiveness.
can be reasonably expected to result in significant injury to the
user.
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. I15
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FQA13N50CF Rev. A