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TERAHERTZ TRANSISTOR

Presented by
Sumit kumar Saha
Elec. & Comm. Engineering
Academy of Technology
What is Terahertz Transistor?
• 1 Tera = 1,000,000,000,000
• Transistor = “Transfer of Resister”

 A transistor is a semiconductor device used to


amplify and switch electronics device.
 A Terahertz transistor can ran 1 trillion cycle per
second
Basic Transistor
• Has at least 3 terminal for connection with
external circuit
• With one terminal can operate the current flow
through other two terminal
• Because the controlled output power can be
much more than the controlling input power, the
transistor provides amplification of a signal
• With controlled terminal we can also operate it
as switch
continued……
Basic Transistor
• According to the structure the types are
BJT, JFET, MOSFET, IGBT, etc.
BJT or FET ?
• The parameters are:-
1. Input resistance
2. Noise
3. Thermal stability
4. Gain-bandwidth product
5. speed

Which is suitable for Terahertz application ?


▫ FET. Specially MOSFT.
Operation of MOSFET transistor
1. Transistor used as switch
2. Transistor used as amplifier
Moore’s Law
• Doubling the number of transistors per
integrated circuit in 18-24 months
• The capabilities of many digital electronic
devices are strongly linked to Moore's
law: processing speed, memory capacity, sensors
and even the number and size of pixels in digital
cameras

Continued….
Moore’s Law
• First observed at 1965
• True for last 45 years
What is the problem ??
• Power consumption starting it rise exponentially
• Driven by
o Transistor Off-state leakage
o Transistor Gate leakage
o High operating voltage
• Soft error rate
Power Consumption Rate Transistor Off-state Leakage

Gelsinger’s Slide from ISSCC 2001


Transistor Gate Leakage Soft Error Rate
High Operating Voltage
• To solve this problem we have to consider
another three parameters
Source and drain resistance
Source and drain capacitance
Gate delay and drive current
Source and Drain Resistance

Continued……
Source and Drain Resistance
Source and Drain Capacitance
Gate Delay and Drive Current
• Gate delay is the time it takes for current to
travel from the source to the drain (across the
channel)
• Drive current is the amount of current that flows
when the transistor is turned on.
• Smaller gate delay and larger drive current
translates into FASTER transistors and circuits.
Fundamental Challenge For This
Decade
• Continue Moore’s Law without Exponential
increase in Power Consumption
• Intel introduced two important technology
Depleted substrate transistor & Raised source-
drain
High k-gate dielectric
• Our long term approach is:
TERAHERTZ TRANSISTER
Depleted substrate transistor And
Raised source & drain
High K-Gate Dielectric
Solution of each problem using
TERAHERTZ TRANSISTOR and
satisfy the Moore’s Law
Solution of Off-state Leakage
Solution of transistor gate leakage by
gate dielectric
Solution of problem with high
operating voltage
Solution of Soft Error Rate
Transistor Performance Comparison
Advantages of Terahertz Transistor
• Reduces leakage current by 10,000X for the same
capacitance
• Increased reliability
• High speed
• Eliminates subsurface leakage
• Minimizes soft error rates
• Eliminates floating body effect
• Less voltage required to turn ON transistor
• No leakage path through substrate
• Lowest junction capacitance
• Ease of circuit design
Application of Terahertz Transistor
• Due to its very difficult fabrication process the
cost is high. So, these type of transistors are not
used in general purpose.
• Intel launched world first THz transistor of
speed 2THz in 2001
• Also AMD, IBM made their first terahertz
transistor in their lab of speed 3.3THz(AMD)
and 2THz(IBM)
• Intel launched 10GHz processor in 2005 and
their next processor of speed 20GHz will
launched in upcoming year.
Continued…..
Applications of Terahertz Transistor
Today they are used in:
• Radiotelescopy and
Sub-Milimeter
Astronomy Devices
• Medical Imaging
Devices
• Security Devices
• Manufacturing, Quality
Control, and Process
Monitoring
Non-planer Tri-Gate Transistor
Thank you

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