The RF Mosfet Line: Broadband RF Power Fet 5.0W, To 400Mhz, 28V

MRF134
The RF MOSFET Line: Broadband RF Power FET M/A-COM Products

5.0W, to 400MHz, 28V Released - Rev. 05202009
Designed for wideband large–signal amplifier and oscillator Product Image

applications up to 400 MHz range.
N–Channel enhancement mode
• Guaranteed 28V, 150 MHz performance

Output power = 5.0 watts
Minimum gain = 11 dB
Efficiency = 55% (Typical)
• Small– and large–signal characterization
• Typical performance at 400 MHz, 28V, 5.0W
Output = 10.6 dB gain
• 100% tested for load mismatch at all phase angles with 30:1 VSWR
• Low noise figure: 2.0 dB (Typ.) at 200 mA, 150 MHz
• Excellent thermal stability, ideally suited for Class A operation
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ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are Visit www.macomtech.com for additional data sheets and product information.
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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RF POWER MOSFET CONSIDERATIONS

DESIGN CONSIDERATIONS resistive divider network. Some special applications may
The MRF137 is a RF power N–Channel enhancement- require a more elaborate bias system.
mode field–effect transistor (FET) designed especially for GAIN CONTROL
VHF power amplifier applications. M/A-COM RF MOS Power output of the MRF137 may be controlled from
FETs feature a vertical structure with a planar design, thus its rated value down to zero (negative gain) by varying the
avoiding the processing difficulties associated with V– dc gate voltage. This feature facilitates the design of man-
groove vertical power FETs. ual gain control, AGC/ALC and modulation systems. (See
M/A-COM Application Note AN211A, FETs in Theory and- Figure 9.)
Practice, is suggested reading for those not familiar with AMPLIFIER DESIGN
the construction and characteristics of FETs. Impedance matching networks similar to those used
The major advantages of RF power FETs include high with bipolar VHF transistors are suitable for MRF137. See
gain, low noise, simple bias systems, relative immunity M/A-COM Application Note AN721, Impedance Matching
from thermal runaway, and the ability to withstand severely Networks Applied to RF Power Transistors. The higher
mismatched loads without suffering damage. Power output input impedance of RF MOS FETs helps ease the task of
can be varied over a wide range with a low power dc con- broadband network design. Both small signal scattering
trol signal, thus facilitating manual gain control, ALC and parameters and large signal impedances are provided.
modulation. While the s–parameters will not produce an exact design
solution for high power operation, they do yield a good first
DC BIAS approximation. This is an additional advantage of RF MOS
The MRF137 is an enhancement mode FET and, there- power FETs.
fore, does not conduct when drain voltage is applied. Drain RF power FETs are triode devices and, therefore, not
current flows when a positive voltage is applied to the gate. unilateral. This, coupled with the very high gain of the
See Figure 10 for a typical plot of drain current versus gate MRF137, yields a device capable of self oscillation. Stabil-
voltage. RF power FETs require forward bias for optimum ity may be achieved by techniques such as drain loading,
performance. input shunt resistive loading, or output to input feedback.
The value of quiescent drain current (IDQ) is not critical Two port parameter stability analysis with the MRF137 s–
formany applications. The MRF137 was characterized at parameters provides a useful tool for selection of loading or
IDQ = 25 mA, which is the suggested minimum value of IDQ. feedback circuitry to assure stable operation. See M/A-
For special applications such as linear amplification, IDQ COM Application Note AN215A for a discussion of two port
may have to be selected to optimize the critical parameters. network theory and stability.
The gate is a dc open circuit and draws no current. There-
fore, the gate bias circuit may generally be just a simple
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The RF Mosfet Line: Broadband RF Power Fet 5.0W, To 400Mhz, 28V

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MRF134

The RF MOSFET Line: Broadband RF Power FET M/A-COM Products

Designed for wideband large–signal amplifier and oscillator Product Image

N–Channel enhancement mode

• Guaranteed 28V, 150 MHz performance

RF POWER MOSFET CONSIDERATIONS

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