Quantum Dot Laser: INA INA INA INA

Quantum Dot Laser
Johann Peter Reithmaier

Technische Physik
Institute of Nanostructure Technologies & Analytics (INA)
University of Kassel
Tutorial for WWW.BRIGHTER.EU

Lund, 29.6.2007
INA
Outline
• Introduction and Some Basic Theory
- density of states, gain function
- dependence on dimensions
• Fabrication Technology
- molecular beam epitaxy and Stranski-Krastanov growth mode
- influence on geometry parameters
• Optical properties of real dots systems

- single dot emission, higher order transitions
- inhomogeneous linewidth, wetting layer
• Application examples of QD lasers

- high power lasers (980 / 920 nm)
- ultra-broadband lasers (1.55 µm)
- ultra-fast broadband SOAs (1.55 µm)
QD Laser, Tutorial, Lund

INA Reithmaier, 29.6.2007 2
Quantum Dot Laser
Due to higher density of states of

quasi-zero dimensional systems
a higher material and differential
gain is expected in comparison
to quantum well or bulk material
Also the transition matrix

element has a higher value due
to the improved overlapp of M. Asada et al., IEEE JQE 22, 1915 (1986)
electron/hole wave functions.
Time Evolution of Threshold Current Density
record

Optical Material Gain
The gain can be changed by current injection between max. absorption

(= -gmax) and max. gain (= gmax).
Spectral gain πq 2h 1 2
function g (E 21 ) = 2 hω
M T ( E 21 ) ρr ( E 21 )(f 2 − f1 ) = g max (E 21 ) ⋅ (f 2 − f1 )
nε0cm 0 21
ρr (E 21 ) reduced density of state function

L.A. Coldren, S.W. Corzine, "Diode Lasers and M T (E 21 ) transition matrix element
Photonic Integrated Circuits", Wiley, 1995.
Density of State Function for 2D Case
h
L
Number of states within
py
circle of radius p:
πp 2
N (p) = 2 ×
(h / L )2
Density of state function p
in momentum space:
dN 4πpA
D( p) = = 2
dp h px
Density of state function as

function of energy:
n m * L2
D( E ) = ∑ Θ( E − E i )
i =1 πh 2

Density of State Functions in 1D and 0D
n 2 1D E1
2m * L 1 E3
D( E ) = ∑ Θ( E − E i ) E2
i =1 h 2
π ⋅ E − E i
with Heaviside function Θ(E),

L as length of structure and
m* as effective mass of particle
n
D ( E ) = ∑ α i ⋅ δ( E − E i ) D(E) 0D
i =1
with αi as degeneracy
(= 2 for s orbitals)
E1 E2 E3 E4 E

Density of State Dependence on Dimensionality
dimension density of state D(p) density of state D(E)

3 2
8πV V  2m *

⋅ (E )
1
3D ⋅ ( p) 2
 2  2
h3 2π2  h 
1
4πA A  2m* 
2D ⋅ (p)1  2  ⋅ (E )0
h2 2π  h 
1
2L L  2m *
 2
 ⋅ (E )− 2
1
1D ⋅ (p)0  2
h π h 
0D δ(p − pi ) δ(E − Ei )

Spectral Gain Function of QD Material
Spectral gain for inho-
mogenously broadened
dot ensemble with one
confined state
µ = chemical potential
σ E = inhomogeneous
linewidth
dot i εi dot j εj
πq 2h 1 2 2 Γin / π
g (hω) = ∫ M ( h ω) P (ε, σ )[ f ( ε , E ) − f ( ε , E )] dε
nε 0cm 0 hω
T E c Fc v Fv
2
V0 (hω − ε) + Γin
2 2
with inhomogeneous ensemble linewidth:

Lorentzian function of
1  (ε − E g − E 0 )  homogeneous linewidth
P ( ε, σ E ) = exp − 
σE 2π  2 σ 2
E  QD Laser, Tutorial, Lund
Gain Engineering with QD Properties
gmat(E) ∝ D(E) × f(E,µ)
QW µ = 1.24 eV to 1.40 eV QD
• Reduced blue shift due to high • After saturation of first transition

total gain large blue shift
F. Klopf et al., Photonics West, 2002

Comparison with Experimental Data
Gain profile evaluated by
high power excitation PL
experiment
→ Spectral gain function
Control of mirror losses by

variation of cavity length
→ Variation of emission
wavelength
1  1 

g th = α i + ln
L  R1 R2 

F. Klopf et al., Photonics West, 2002

Temperature Stability
• Flat gain profile

• Very low temperature dependence of
emission wavelength of 0.11 nm/K
(best value for BA lasers: 0.09 nm/K)
Basic effect described in

F. Klopf et al., APL 81, 217 (2002) QD Laser, Tutorial, Lund
Specific Properties of QD Gain Material
20 nm
E E E E
< kT/10 > 4kT
QW hν QDs hν
x k x k
Discrete energy levels: → high density of states, no temperature dependence
h
e- +
h
+ QW e- QDs
reduced diffusion: → no diffusion to surfaces

reduced active volume: → low absorption, low inversion densities
refractive index decoupled
4π dn dN
from carrier density → low chirp α=−
+ symmetric gain function: λ dg dN

• Optical properties of real dots


- ultra-broad band lasers (1.55 µm)

Basic Phenomena During Epitaxial Growth
Example: Molekular Beam Epitaxy
Positive Growth
• Incorporation into crystal
steps
• Spontaneous nucleation
Negative Growth
• Desorption
Zero Growth
• Surface migration
• Interdiffusion

Elastically Strained Material
Unstrained Material Pseudomorphic Growth
GaAs
.
pr
m
co
stress
InAs
tensile
GaAs
• InAs has 7.2 % larger lattice constant than GaAs

• For thin layers, growth without lattice defects possible

Self-Assembled Quantum Dot Growth
Strain driven self-organisation effect
(Stranski-Krastanov growth mode)
Quantum Dot
In As
In As
GaAs
Wetting Layer Island Growth
• Formation of atom-like islands (d ≈ 10-20 nm) due to energy minimation

(wetting layer thickness: 1.7 ML for InAs)
• One dot contains still 105 atoms and behaves partially like bulk material
(e.g., band structure properties)

Dot Nucleation Process
Surface energy difference:
∆E surf ~ x 2 (~ surface)
Strain energy difference:
∆E strain ~ x 3 (~ volume)
Energy balance:
∆E = Cγx 2 − κε2C' x 3
γ = surface energie,
κ = elasticity module,
ε = strain coefficient
island size x island formation:

x > xcrit

InAs QD Formation on Different Substrates
InAs Quantum Dashes

InAs Quantum Dots
on AlGaInAs lattice
on GaAs
matched to InP
• QDash structures of high density are formed preferable in [0-11] crystal

direction

Dot density control by growth temperature
• In0.6Ga0.4As QDs with fundamental transitions energy of around 1.3 eV

• AFM images of uncovered quantum dots on GaAs surfaces
Tsubstrate = 480 °C Tsubstrate = 510 °C Tsubstrate = 530 °C

1x1µm 1x1µm 1x1µm
Dot density: Dot density: Dot density:

6 x 1010 cm-2 2 x 1010 cm-2 < 109 cm-2

Influence of In Concentration on Dot Shape
xIn = 60% xIn = 45% xIn = 30%
A. Löffler et al., JCG 286, 6 (2006)
xIn = 27% xIn = 30% xIn = 33%
A. Löffler et al., PSS C 3, 3815 (2006)

Control of Dot Size by Layer Thickness
Photoluminescence measure-
ment of different QD samples
at high excitation powers:
energy separation between

ground and first excited state
increases with decreasing
dot size:
a) ∆x ≈ 47 meV
b) ∆x ≈ 56 meV
c) ∆x ≈ 65 meV
⇒ small QDs promising for
tailoring gain spectrum of
QD lasers
J.P. Reithmaier et al.,

phys. stat. sol. B 234, 3981 (2006)

Strain Coupling
Preferential nu-
cleation of InAs
Aligned InAs Dot
Local Strain
InAs Dot
GaAs layer
• Vertical alignment of QDs due to strain

coupling
• Coupling strength dependent on thickness
of GaAs intermediate layer (d < 30 nm)
Maximov et al., J. Appl. Phys. 83, 5561 (1998)



- high power lasers (980 and 920 nm)
- telecom lasers and amplifiers (1.3 and 1.55 µm)
- single photon emitters and microcavity lasers

Potential shape of SA-QDots
• Electroluminescence at
77 K
• Nearly equidistant
transistion energies
→ Parabolic
potential shape
65 meV

Quantum Dot Wavefunctions
s and p type electron and

hole states for an
InAs/GaAs quantum dot
(exciton formation is not
taken into account).
electron states heavy hole states
D. Bimberg et al., "Quantum Dot
Heterostructures", Wiley, 1999 QD Laser, Tutorial, Lund
Self-Assembled Quantum Dots
100 nm
Single dot
spectroscopy
T = 4K 100 nm
200 nm
norm. intensity
300 nm
reference
1,25 1,30 1,35 1,40
energy [eV]
• Broad emissions spectrum of a dot
ensemble due to size fluctuations • Single line by dot selection

Spectrally Distributed Gain
Material Gain T = 300 K
inhomogeneously
broadend gain
function
homogeneously Energy
broadend ensemble gain
⇒ multi-wavelength amplification due to weak overlap between gain

functions of different dot ensembles
homogeneous linewidth ≈ 5 - 10 meV (RT)
inhomogeneous linwidth ≈ 30 - 50 meV

Wetting layer thickness
Photoreflectance spectroscopy
QD
wetting layer
• Reflectance spectroscopy as very • WL thickness varies from

sensitive tool for optical transitions 1.6 ML (InAs) up to about
• WL transitions clearly visible as 10 MLs (In0.3Ga0.7As)
hh1-e1 and lh1-e1 transitions
G. Sek et al., JAP 100, 103529 (2006)
• WL transitions dependent on In
concentration and thickness QD Laser, Tutorial, Lund
Gain Saturation and Flat Gain Profile
p-contact
n-contact
detector
• High gain at transition

energy already at low
current density
• Fundamental transition
saturates and higher
order transitions
contribute to the gain
• maximum gain of
17 - 20 cm-1
(6 dot layers stack)
suprisingly low modal gain of 3 cm-1
per dot layer QD Laser, Tutorial, Lund
Auger Effect in Different Types of QDs
• Hydrostatic pressure measure-
ments show very different beha-
vior of 980 nm and 1.3 µm QD
lasers.
• Ith(980 nm) increases with p and
Elas with p2 as expected for
radiative recombination
• Ith(1.3 µm) decreases by 26 %
with p while Elas increases.
Behavior for 1.3 µm could be most

likely explained by a significant
contribution of Auger recombination
as non-radiative process while
980 nm QD lasers seems to be do-
minated by radiative recombination.
I.P. Marco et al., JSTQE 9, 1300 (2003)

Gain of 980 nm QD and QW-Laser
• Inversion condition already

achieved at lower carrier
densities
→ jtr = 36 A/cm2 (αi = 2.2 cm-1)
jth = 54 A/cm2 (2mm,HR/HR)
• Modal gain for single dot layer

limited
1  1 
Threshold gain : g th = αi + ln 
L  R1R 2 
F. Klopf et al., APL 77, 1419 (2000)




Motivation for Uncooled Pump Lasers
Absorption spectrum of Yb fibre
1
• Major costs in high power pump
0,9
modules: Peltier cooler
0,8
• External wall plug efficiency of pump 0,7
module dominated by Peltier cooler
Absorption(a.u.)
0,6
consumption. 6 nm
0,5
• Strong cost reduction possible by 0,4 60 nm
passive cooling 0,3
• Passive cooling with QW laser 0,2

impossible due to wavelength shift 0,1
(> 20 nm between 0 – 65 °C) 0
920 nm 976 nm
• 920 nm favourable due to broader 800 850 900 950 1000 1050 1100
absorption band Wavelength (µm)
• High power 920 nm QD laser with

temperature shift < 10 nm possible
measured by Alcatel

High Power CW-Operation (980 nm laser)
7
FBH 100 µm
Ferdinand-Braun-Institut
für Höchstfrequenztechnik 6 T = 15°C
5 100 µm;
• Epi-side down mounted devices
optical power P / W
T = 25°C
mounted on heat sink 4 50 µm
• Pmax = 4.3 W (6.3 W) for 50 µm (100 T = 15°C
50 µm
µm) stripe width in cw 3 T = 25°C
• Record in cw output power and power

2
per stripe width (86 mW/µm)
• Pmax = 5.4 W (9.5 W) for 50 µm (100 1
µm) stripe width in qcw (100 µs pulses) CW
→ (104 mW/µm) 0
0 2 4 6 8 10 12 14 16 18
Current I / A
B. Sumpf et al., EL 39, 1655 (2003)

High Power Lifetime Measurements (980 nm)
FBH 3500
Ferdinand-Braun-Institut
für Höchstfrequenztechnik 3000 2W
2500
current I / mA
• Epi-side down 1.5 W
2000
mounted devices 011611
1500 1 W 011612
• 1 mm long, 70 µm
1000 011613
wide stripes 011614
500 011615
• 2300 h without
failures 0
0 500 1000 1500 2000
• > 1000 h at 2 W Aging time t / h
(≈ 30 mW/µm)

Temperature Stability of Wavelength (980 nm)
2.5 mm
QW at 600 mA 0.36 nm/K
1000 QD1 at 1200 mA 0.107 nm/K
QD2 at 2200 mA 0.097 nm/K

tapered laser 995
990
wavelength (nm)
985
• Very low temperature
dependence for QD
lasers 980
• Between 20 – 80°C
QW: ∆λ = 22 nm
975
QD: ∆λ < 6 nm 20 30 40 50 60 70 80
temperature (°C)
S.C. Auzanneau et al., APL 84, 2238 (2004)
High Power Measurement Data of 920 nm QD Lasers
As-cleaved device,
Wall-plug efficiency of 55 % at 1.5 W
1 mm long, 100 µm wide
S. Deubert et al, EL 41, 1125 (2005)

Temperature Stability of Laser Performance (920 nm)
CW operation of a 1.0 mm × 100 µm:

• Temperature from 20 to 100°C in steps
T = 20 to 100°C
of 10°C
• High temperature stability of threshold
and efficiency
• Emission wavelength at about 915 nm
• Output power of P > 1 W @ 100°C
Pulsed operation
• Tmax > 140 °C
• High T0 of 162 K
up to 40 °C and
> 150K up to 60°C

920 nm Tapered QD Lasers
power per from front facet (W)

wall plug efficiency
Near field intensity profile at Pcw = 1 W
current (A)
• High single lobe output power • Tapered lasers with LR = 1 mm,

• M2 = 2.4 at 1 W output power LT = 2 mm, φ = 6°
• About 4 times higher brilliance than • Pmax = 3W, wall plug eff. up to 39%
BA-lasers (50 MWcm-2sr-1)
W. Kaiser et al, to be published QD Laser, Tutorial, Lund

Single Mode QD Tapered Lasers (920 nm)
• Lateral gratings fix emission

wavelength
• Single mode emission up to
500 mW
W. Kaiser et al, to be published
Wavelength Stabilized QD Lasers with Gratings
3 mm
tapered laser
• Tapered lasers with lateral gratings • Temperature stable emission

wavelength (0.07 nm/K)
• Single mode emission between
20 to 80 °C due to temperature • Temperature dependence of QD
insensitive gain function material at same order than refractive
index change
Kaiser et al., CLEO, Long Beach (May, 2005)
Temperature Stable Laser Performance (920 nm)
• Constant slope efficiency between 20 – 80 °C

• High T0 value up to operation temperatures of 100 °C
• Improvement also due to nearly coincident temperature development of gain
and grating period
W. Kaiser et al, to be published




QDashes on (001) InP-Substrates
h = 3 nm
w = 20 nm
50 nm
• XTEM images done by Univ. of Duisburg (T. Kümmell, G. Bacher)

• Pyramidal like cross-section with dominating vertical quantization
T. Kümmell et al., APL 86, 253112 (2005)

Shape Preserving QDash Formation Process
T=8 K
• Deposition
from 0.8-3.1 MLs (A-E)
→ wavelength
shift > 500 nm
• STEM: Width/height ratio

preserved
T. Kümmell et al., Physica E 32, 108 (2006)

Variability of QDash Structures on InP
Wavelength (nm)
1600 1500 1400 1.2
Wavelength (nm)
Intensity (normal.)
1 1.1
1200
Energy (eV)
0.8 1.0
0.6 FWHM 0.9 1400
= 92 nm
0.4 0.8 1600
0.2 0.7 PL (8K) 1800
0 0.6 2000
0.75 0.8 0.85 0.9 0 0.5 1 1.5 2 2.5 3
Energy (eV) Nominal Layer Thickness (nm)
• Nearly symmetric broadband PL at 10 K

• Control of emission wavelength by QDash layer
• Extremely wide wavelength range: 1.2 – 2 µm (at RT)
• By multiple QDash layers ultra-broadband amplification possible
A. Somers, IPRM, Glasgow (2004)

Ultra-Broad Gain Spectrum
Design Design
A C
A. Somers et al., APL 89, 061107 (2006)

Static DFB Laser Data
RWG laser with Single wafer
HR coated
backside mirror wavelength tuning
15
cw, L = 600 µm
output power (mW)
10
DFB laser with Cr
as cleaved facet
gratings
8 10
T = 20 °C
5 0
intensity (dB)
I = 70 mA
-10 cw
HR facet output power (mW) -20 SMSR
6 -30 48 dB
-40
-50
0
0 -60
20 40 60 80 1.48 1.49 1.5 1.51 1.52
current (mA) 4 wavelength (µm)
cw, L = 600 µm
0
0 20 40 60 80
drive current (mA) QD Laser, Tutorial, Lund



Spectral gain of QD-SOAs
25
100 mA
175 mA
20
250 mA
300 mA
gain (dB)
Technion 15
AR 10
coatings
W 0
L=2.5mm 1.45 1.47 1.49 1.51 1.53 1.55 1.57 1.59 1.61
wavelength (µm)
• SOA = RWG laser with anti-reflection coatings

• Large bandwidth (> 200 nm, measurments limited by tunable laser)
• High amplification (25 dB for 2.5 mm long device)
• High saturation power of 18 dBm (= 63 mW)

BER-Measurements for XG-Modulation
Technion
20 -2
Modulated Output signal at λs=1575 nm
signal
10 Wavelength
converted signal -3
0 Receiver
-4
Power (dBm)
-10
log10(BER)
-20
50 nm
-5
-30
-6
-40
-7
-50 Converted signal
2.5 GBit/s at λc=1525 nm
-60 -8
1500 1550 1600 PRB
Wavelength (nm)
-9
-34 -32 -30 -28 -26
Pin (dBm)
• About 5 dB penalty due to additional noise of amplifier and set-up
• 50 nm wavelength conversion with 2.5 Gbit/s (open eye diagram)
• BER identical between modulated and converted signal
A. Bilenca et al., PTL 15, 563 (2003)

Multi-wavelength amplification with QD-SOA
Amplification of eight 10 Gbit/s channels with no cross talk Technion
• Amplification of 8 channels over 100 nm at 10 Gbit/s

• Pin -21 dBm / channel - 0 dB crosstalk-induced penalty
R. Alizon et al., EL 40, 760 (2004) QD Laser, Tutorial, Lund

HF Properties (40 Gbit/s)
Technion
without SOA -7 dBm
ER 6.3 ER 6.2
Q 4.15 Q 4.5
-2 dBm +0.5 dBm
ER 6.1 ER 5.9
Q 5.0 10 ps/div. Q 5.3
• 40 GBit/s PRB input signal: no patterning effect J.P. Reithmaier et al.,

• Improved signal for operation in saturation condition JPD 38, 2088 (2005)

Calculated RIN Spectra
Technion
-135 0
Pin = 0.1Pinsat
-140
-1
Normalized RIN [dB/Hz]

Pin = 0.1Pinsat
• Reduction in RIN
-145 signal due to band
RIN [dB/Hz]
Pinsat -2 filling
-150
• Broad band intensity
-3 noise suppression
-155 Pinsat
10 Pinsat
over hundreds of
-4 GHz !
-160
10 Pinsat
-5
-5 -2.5 0 2.5 5 -500 -250 0 250 500
Frequency [THz] Frequency [GHz]
D. Hadass, JSTQE 11, 1015 (2005)

Pump-Probe Measurements
300
2 Current: 150 mA
45 mA
Recovery time (ps)

200
0
∆ G (dB)
-2 100
75 mA Slow recovery
Experiment
-4 100 mA
Bi-exponential fit 3
-6 2 Fast recovery
150 mA
λ = 1523 nm 1
-8
0
-2 0 2 4 6 8 20 40 60 80 100 1475 1500 1525 1550 1575 1600
Delay (ps) Wavelength (nm)
τ1 τ3
τ 1 = 1-2 ps (local carrier storage)

τ 3 > 100 ps (transport time)
M. Van der Poel et al., APL 89 (8), 081102 (2006) QD Laser, Tutorial, Lund
Summary
• Theoretical Background of Low Dimensional Systems
- Strong influence of dimensionality on gain properties
- Additional geometry parameters can be used for spectral gain
engineering and tailoring of new material properties
• Fabrication Technology of Dot-Like Structures
- Self-assembly techniques driven by material strain
- Geometry parameters (density, size, size distribution) can be
controlled by growth parameters
• High power QD lasers
- BA laser: 6.3 W (980 nm), 3 W (920 nm) output power, ηw = 55 %
- Tapered laser: 3 W cw single lobe output power, ηw = 39%
- Internal temperature compensation by dot tailoring
(BA laser: dλ/dT = 0.11 nm/K, T laser: dλ/dT = 0.07 nm/K)
• 1.55 µm QD Lasers and SOAs
- ultra-broad band gain material (> 300 nm) for telecom laser appl.
- 10 GBit/s multi-wavelength amplification
- 40 GBit/s pattern free signal amplification and recovery
Acknowledgements
University of Würzburg European IST-Projects
Thales R & T
Alcatel – Thales III-V Lab
Ferdinand Braun Institut

für Höchstfrequenztechnik
Technion
Technion
DTU•COM
Universidad
Politécnica de
Universidad Politécnica
Madrid de Madrid
Politecnico di Torino

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Quantum Dot Laser

Johann Peter Reithmaier

Tutorial for WWW.BRIGHTER.EU

• Optical properties of real dots systems

• Application examples of QD lasers

QD Laser, Tutorial, Lund

Due to higher density of states of

Also the transition matrix

QD Laser, Tutorial, Lund

The gain can be changed by current injection between max. absorption

ρr (E 21 ) reduced density of state function

Density of state function as

QD Laser, Tutorial, Lund

with Heaviside function Θ(E),

QD Laser, Tutorial, Lund

dimension density of state D(p) density of state D(E)

QD Laser, Tutorial, Lund

with inhomogeneous ensemble linewidth:

gmat(E) ∝ D(E) × f(E,µ)

• Reduced blue shift due to high • After saturation of first transition

F. Klopf et al., Photonics West, 2002

→ Spectral gain function

Control of mirror losses by

F. Klopf et al., Photonics West, 2002

• Flat gain profile

Basic effect described in

reduced diffusion: → no diffusion to surfaces

QD Laser, Tutorial, Lund

• Optical properties of real dots

• Application examples of QD lasers

QD Laser, Tutorial, Lund

QD Laser, Tutorial, Lund

• InAs has 7.2 % larger lattice constant than GaAs

QD Laser, Tutorial, Lund

Wetting Layer Island Growth

• Formation of atom-like islands (d ≈ 10-20 nm) due to energy minimation

QD Laser, Tutorial, Lund

Surface energy difference:

Strain energy difference:

island size x island formation:

QD Laser, Tutorial, Lund

InAs Quantum Dashes

• QDash structures of high density are formed preferable in [0-11] crystal

QD Laser, Tutorial, Lund

• In0.6Ga0.4As QDs with fundamental transitions energy of around 1.3 eV

Tsubstrate = 480 °C Tsubstrate = 510 °C Tsubstrate = 530 °C

Dot density: Dot density: Dot density:

QD Laser, Tutorial, Lund

xIn = 60% xIn = 45% xIn = 30%

A. Löffler et al., JCG 286, 6 (2006)

xIn = 27% xIn = 30% xIn = 33%

A. Löffler et al., PSS C 3, 3815 (2006)

QD Laser, Tutorial, Lund

energy separation between

J.P. Reithmaier et al.,

QD Laser, Tutorial, Lund

• Vertical alignment of QDs due to strain

Maximov et al., J. Appl. Phys. 83, 5561 (1998)

QD Laser, Tutorial, Lund

• Optical properties of real dots

• Application examples of QD lasers

QD Laser, Tutorial, Lund