Simplified Large-Signal Models of the Bipolar-Junction Transistor (BJT)

Large-Signal Models provide equivalent-circuits for BJTs that offer useful approximations of these
devices over relatively broad ranges of operation. Since there are 2 general types of BJT, and 3
principle modes of operation for each, different large-signal models of the BJT are required in order to
address the common applications. These different models are summarized below:

Active Mode:
The equations derived in class relating the BJT currents & voltages in the Active Mode lead to two
possible equivalent circuit topologies based on a single diode (to characterize the EBJ) and either a
voltage-controlled or a current-controlled current source (to characterize the CBJ). These two
topologies are fundamentally equivalent, but naturally give rise to two corresponding two-port-network
configurations, each being suited to a particular class of applications. Refer to sections 5.1 & 5.2 of
the text by Sedra & Smith (5th Ed.) for more detailed descriptions of these models.

iB iC E
iE
B C
v v
vBE I e BE/VT =iB vEB I e EB/VT = iB
S S
=
iE =
i E
B C
iE iB iC
E

npn - Common-Emitter Configuration pnp - Common-Emitter Configuration

iC C E
v
I e BE/VT = i B vEB iE
iB S
=
iE
B B
iB v
vBE iE I e BE/VT = i B
iC S
=
i E
E C
npn - Common-Base Configuration pnp - Common-Base Configuration

Note that, implicit in the equivalent circuits shown here, is the use of an Exponential Model to describe
the diodes used here to model the emitter-base junction (EBJ). These equivalent circuits can be further
simplified by using a suitable, linearized, large-signal model for the diodes (e.g., Constant-Voltage-
Drop), which is often sufficient for discrete circuit applications; this leads to vBE = VBE(on) = constant
= 0.7 V (for npn), or vEB = VEB(on) = constant = 0.7 V (for pnp).

Saturation Mode:
In the Saturation Mode of operation, the EBJ and the CBJ are both forward biased and (exponential)
diode equations could be used to model both junctions. In practise, most applications of the BJT in
saturation involve sufficiently large forward currents through each of the junctions that a Constant-

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Voltage-Drop model is adequate. This leads to the equivalent circuits shown below, where VBE(on)
and VEB(on) are the same as for the Active Mode ( typically ~0.7 V), and VCE(sat) and VEC(sat)
represent the slight differences between the "constant-voltage-drop" values used for the EBJ diode
(typically ~0.7 V) vs. the CBJ diode (typically ~0.5 V).
iB iC E
iE
B C
VBE(on) VCE(sat) VEB(on) VEC(sat)

B C
iE
E iB iC

npn pnp

Cutoff Mode:
In the Cutoff Mode of operation, the EBJ and the CBJ are both reverse biased and the BJT terminals
are all, essentially, electrically isolated from one another as depicted in the equivalent "circuits" shown
below.
B C E

vBE v CE
v EB v EC

E B C
npn pnp

A Generalized Large-Signal Model for the BJT: The Ebers-Moll (EM) Model
A formal. generalized model that describes the BJT in any of its modes of operation, including both
forward-active and reverse-active modes, is shown below, where
F  forward
(typically  F
1 )
and
R  reverse
(typically 0.01 <
R 0.5). The equations relating the various currents and voltages
are derived in section 5.1.4 of the text by Sedra & Smith (5th Ed.). To explore applications of the EM
model is beyond the intended scope of this course, and the model is shown here F.Y.I. only.
C iC E iE

i DC v CB
F i DE i DE vEB
R iDC
iB iB
B B
i DE v BE
R i DC i DC vBC
F i DE

iE iC
E C

npn pnp

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