6N137
Degital Logic Isolation
Unit in mm
Tele-Communication
Analog Data Equipment Control
The TOSHIBA 6N137 consist of a high emitting diode and a one chip
photo IC. This unit is 8-lead DIP package.
Truth Table
Input Enable Output
TOSHIBA 11−10C4
H H L
L H H Weight: 0.54 g (typ.)
H L H
L L H Pin Configurations (top view)
1 8
IF ICC 2 7
2 IO 8 VCC 3 6
VF V
6 O 4 5
3
GND
IE 5 1 : N.C.
7
2 : Anode
VE
3 : Cathode
4 : N.C.
5 : GND
6 : Output(Open collector)
7 : Enable
8 : VCC
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6N137
Absolute Maximum Ratings
Forward current IF 20 mA
LED
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 2) Soldering portion of lead: Up to 2mm from the body of the device.
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
*This item denotes operating ranges, not meaning of recommended operating conditions.
Precaution
Please be careful of the followings.
A ceramic capacitor(0.1μF)should be connected from pin 8 to pin 5 to stabilize the operation of the high gain
linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length
between capacitor and coupler should not exceed 1cm.
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Electrical Characteristics
Over Recommended Temperature (Ta = 0~70°C unless otherwise noted)
VCC=5.5V, VO=5.5V
High level output current IOH ― 1 250 μA
IF=250μA, VE = 2.0V
VCC=5.5V, IF=5mA
Low level output voltage VOL VEH=2.0V ― 0.4 0.6 V
IOL(sinking)=13mA
High level enable current IEH VCC=5.5V, VE=2.0V ― −1.0 ― mA
Low level enable current IEL VCC=5.5V, VE=0.5V ― −1.6 −2.0 mA
High level supply current ICCH VCC=5.5V, IF=0, VE=0.5V ― 7 15 mA
VCC=5.5V, IF=10mA
Low level supply current ICCL ― 12 18 mA
VE=0.5V
Resistance (input−output) VI−O=500V, Ta=25°C 12
RI−O ― 10 ― Ω
(Note 3) R.H.≤60%
Capacitance (input−output)
CI−O f=1MHz, Ta=25°C ― 0.6 ― pF
(Note 3)
Input forward voltage VF IF=10mA, Ta=25°C ― 1.65 1.75 V
Input reverse breakdown
BVR IR=10μA, Ta=25°C 5 ― ― V
voltage
Input capacitance CIN VF=0, f=1MHz ― 45 ― pF
Current transfer ratio CTR IF=5.0mA, RL=100Ω ― 1000 ― %
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6N137
Switching Characteristics (Ta = 25°C, VCC = 5V)
Test
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Circuit
Propagation delay time to high RL=350Ω, CL=15pF
tpLH 1 ― 60 75 ns
output level IF=7.5mA
Propagation delay time to RL=350Ω, CL=15pF
tpHL 1 ― 60 75 ns
low output level IF=7.5mA
Output rise−fall time RL=350Ω, CL=15pF
tr, tf ― ― 30 ― ns
(10−90%) IF=7.5mA
RL=350Ω, CL=15pF
Propagation delay time of IF=7.5mA
tELH 2 ― 25 ― ns
enable from VEH to VEL VEH=3.0V
VEL=0.5V
RL=350Ω, CL=15pF
Propagation delay time of IF=7.5mA
tEHL 2 ― 25 ― ns
enable from VEL to VEH VEH=3.0V
VEL=0.5V
VCM=10V
Common mode transient
RL=350Ω
immunity at logic high CMH 3 ― 200 ― V / μs
VO(min.)=2V
output level
IF=0mA
VCM=10V
Common mode transient
RL=350Ω
Immunity at logic low CML 3 ― −500 ― V / μs
VO(max.)=0.8V
output level
IF=5mA
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Test Circuit 1.
5V
tpHL and tpLH
Pulse 1 8
VCC
350mV(IF = 7.5mA) generator
0.1μF
Input ZO = 50Ω 2 7 RL
175mV(IF = 3.75mA) tr = 5ns By-
tpHL pass
3 6
IF Output
tpLH VOH Monitoring CL
4 GND 5 VO
Output VO Node
47Ω
1.5V monitor-
VOL ing
node
Test Circuit 2.
Input VE
tEHL and tELH Monitoring node
Pulse
generator 5V
ZO = 50Ω
tr = 5ns
1 VCC 8
3.0V 0.1μF
Input VE 7.5mA 2 7 RL
1.5V dc By-
tEHL VO
IF pass
3 6
tELH VOH Output
CL
monitor-
4 GND 5
Output VO ing
1.5V
VOL node
Test Circuit 3.
Transient immunity and typical waveforms
1 VCC 8 5V
10V IF 0.1μF
90% 10% 2 7 RL
By-
10% 90% 0V A pass
tr 3 6 VO
tf
B
5V 4 GND 5
VO
VFF Pulse gen.
Switch at A : IF = 0mA
ZO = 50Ω. VCM
VO VOL
Switching at B : IF = 5mA
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IF – V F ΔVF / ΔTa – IF
100 -2.6
Ta = 25°C
10
-2.2
IF
Forward current
1 -2.0
-1.8
0.1
-1.6
0.01 -1.4
1.0 1.2 1.4 1.6 1.8 0.1 0.3 1 3 10 30
IOH - Ta
VO – IF 10
VF = 1V
8 VCC = 5.5V
VCC = 5V 5
VO = 5.5V
Ta = 25°C
(V)
3
6
High level output current
VO
IOH (μA)
RL = 350Ω 1
Output voltage
4
1kΩ
0.5
4kΩ
0.3
2
0 0.1
0 1 2 3 4 5 6 0 20 40 60 80
VO L – Ta
VO – IF
IF = 5mA
VCC = 5.5V
8 0.5
VCC = 5V VE = 2V
Low level output voltage
RL = 350Ω
(V)
RL = 4kΩ
6
IOL = 16mA
VOL (V)
VO
0.4
12.8mA
Ta = 70°C 9.6mA
Output voltage
4
0°C
6.4mA
0.3
2
0 0.2
0 1 2 3 4 5 6 0 20 40 60 80
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6N137
(ns)
(ns)
1kΩ
80 tpLH 1kΩ 80 tpLH
350Ω 350Ω
tpHL, tpLH
tpHL, tpLH
60 tpHL tpLH 60
350Ω
1kΩ
tpHL
1kΩ 4kΩ
40 40
4kΩ
Ta = 25°C VCC = 5V
20 20
VCC = 5V IF = 7.5mA
0 0
5 7 9 11 13 15 17 19 0 10 20 30 40 50 60 70
tr, tf – Ta tEHL,tELH - Ta
320 80
VCC = 5V VCC = 5V
IF = 7.5mA VEH = 3V
300 RL = 4kΩ 70 tELH RL = 4kΩ
tf IF = 7.5mA
(ns)
280 60
tr, tf
tf 1kΩ
80
tEHL, tELH (ns)
50
Rise, fall time
60
tf 350Ω 40
40 tELH 1kΩ
tr 350Ω 30
20 tELH 350Ω
1kΩ 350Ω
4kΩ 20
0
0 10 20 30 40 50 60 70 tEHL
1kΩ
10
Ambient temperature Ta (°C) 4kΩ
0
0 10 20 30 40 50 60 70
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