FGL60N100BNTD

IGBT
FGL60N100BNTD
NPT-Trench IGBT

General Description Features

Trench insulated gate bipolar transistors (IGBTs) with NPT • High Speed Switching
technology show outstanding performance in conduction • Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A
and switching characteristics as well as enhanced • High Input Impedance
avalanche ruggedness. These devices are well suited for • Built-in Fast Recovery Diode
Induction Heating ( I-H ) applications

Application
Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance

TO-264
G C E
E

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Description FGL60N100BNTD Units

VCES Collector-Emitter Voltage 1000 V
VGES Gate-Emitter Voltage ± 25 V
Collector Current @ TC = 25°C 60 A
IC
Collector Current @ TC = 100°C 42 A
ICM (1) Pulsed Collector Current 200 A
IF Diode Continuous Forward Current @ TC = 100°C 15 A
IFM Diode Maximum Forward Current 200 A
PD Maximum Power Dissipation @ TC = 25°C 180 W
Maximum Power Dissipation @ TC = 100°C 72 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for soldering
TL 300 °C
Purposes, 1/8” from case for 5 seconds

Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.69 °C/W
RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 2.08 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 25 °C/W

©2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

FGL60N100BNTD Rev.A2
 FGL60N100BNTD
Electrical Characteristics of IGBT TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVCES Collector Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1000 -- -- V
ICES Collector Cut-Off Current VCE = 1000V, VGE = 0V -- -- 1.0 mA
IGES G-E Leakage Current VGE = ± 25, VCE = 0V -- -- ± 500 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 60mA, VCE = VGE 4.0 5.0 7.0 V
Collector to Emitter IC = 10A, VGE = 15V -- 1.5 1.8 V
VCE(sat)
Saturation Voltage IC = 60A, VGE = 15V -- 2.5 2.9 V

Dynamic Characteristics
Cies Input Capacitance -- 6000 -- pF
VCE=10V, VGE = 0V,
Coes Output Capacitance -- 260 -- pF
f = 1MHz
Cres Reverse Transfer Capacitance -- 200 -- pF

Switching Characteristics
td(on) Turn-On Delay Time -- 140 -- ns
VCC = 600 V, IC = 60A,
tr Rise Time -- 320 -- ns
RG = 51Ω, VGE=15V,
td(off) Turn-Off Delay Time -- 630 -- ns
Resistive Load, TC = 25°C
tf Fall Time -- 130 250 ns
Qg Total Gate Charge -- 275 350 nC
VCE = 600 V, IC = 60A,
Qge Gate-Emitter Charge -- 45 -- nC
VGE = 15V , TC = 25°C
Qgc Gate-Collector Charge -- 95 -- nC

Electrical Characteristics of DIODE T C = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

IF = 15A -- 1.2 1.7 V
VFM Diode Forward Voltage
IF = 60A -- 1.8 2.1 V
trr Diode Reverse Recovery Time IF = 60A di/dt = 20 A/us -- 1.2 1.5 µs
IR Instantaneous Reverse Current VRRM = 1000V -- 0.05 2 µA

FGL60N100BNTD Rev.A2 www.fairchildsemi.com

 FGL60N100BNTD
200 90
Common Emitter 20V Common Emitter
o
TC = 25 C 10V 80 VGE = 15V

Collector Current, I C [A]

15V TC = 25 C
o
o
TC = 25 C
Collector Current, I C [A]

150 9V 70 o
TC = 125 C ------

60 o
TC = 125 C
50
100 8V
40

30
50
7V 20

10
VGE = 6V
0 0
0 1 2 3 4 0 1 2 3 4
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics

10
Common Emitter Common Emitter
O
VGE=15V T C= - 40 C
Collector-Emitter Voltage, VCE [V]

Collector-Emitter Voltage, VCE[V]

3 8
80A

60A 6

30A
2 4
30A 60A
80A

2
IC=10A
IC=10A
1 0
-50 0 50 100 150 4 8 12 16 20

Case Temperature, TC [℃] Gate-Emitter Voltage, V GE [V]

Fig 3. Saturation Voltage vs. Case Fig 4. Saturation Voltage vs. VGE
Temperature at Varient Current Level

10 10
Common Emitter Common Emitter
o o
TC = 25 C TC = 125 C
Collector-Emitter Voltage, VCE [V]

Collector-Emitter Voltage, VCE [V]

8 8

30A
6 6
60A
30A 80A

4 60A 4
80A

2 2

IC = 10A IC = 10A

0 0
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE

FGL60N100BNTD Rev.A2 www.fairchildsemi.com

 FGL60N100BNTD
10000
10000
Cies
V CC =600V, IC =60A
V GE=15V
o
T C =25 C
Capacitance [pF]

Tdoff
1000 1000

Switching Time [ns]

Tr

Tdon
Tf
Coes

100 Cres 100

Common Emitter
VGE = 0V, f = 1MHz
o
TC = 25 C
10
0 5 10 15 20 25 30 0 50 100 150 200
Collector-Emitter Voltage, VCE [V] Gate Resistance, R G [?]

Fig 7. Capacitance Characteristics Fig 8. Switching Characteristics vs.

Gate Resistance

20
Common Emitter
1000 VCC=600V, RL=10Ω
V CC= 6 0 0 V , R g = 5 1 Ω o
T C=25 C
o
V GE= 1 5 V , T C = 2 5 C
15
Gate-Emitter Voltage,VGE [V]

T d o ff
Switching Time [ns]

10
Tf
Tr

5
100
T don

0
10 20 30 40 50 60 0 50 100 150 200 250 300

C o lle cto r C urre nt, IC [A ] Gate Charge, Qg [nC]

Fig 9. Switching Characteristics vs. Fig 10. Gate Charge Characteristics

Collector Current

IC MAX. (Pulsed) 10

100 IC MAX. (Continuous)

Thermal Response, ZθJC [ C/W]

50us
1
Collector Current , I C [A]

100us 0.5

10 0.2
1ms
0.1 0.1
DC Operation
0.05
0.02
1 Single Nonrepetitive Pulse
o
TC = 25 C 0.01
0.01
Curve must be darated
linearly with increase
in temperature single pulse
0.1 1E-3
-4 -3 -2 -1 0 1
1 10 100 1000 10 10 10 10 10 10
Collector-Emitter Voltage, VCE [V] Rectangular Pulse Duration [sec]

Fig 11. SOA Characteristics Fig 12. Transient Thermal Impedance of IGBT

FGL60N100BNTD Rev.A2 www.fairchildsemi.com

 FGL60N100BNTD
100 1.2 120
IF= 60A
o
TC= 25 C

Reverse Recovery Time, trr [ns]

1.0 100

Reverse Recovery Current Irr [A]

o
Forward Current, IF[A]

T C = 100 C
10 0.8 80
trr
o
T C = 25 C 0.6 60

1 0.4 40

0.2 Irr 20

0.1
0.0 0
0.0 0.5 1.0 1.5 2.0 2.5
0 40 80 120 160 200 240
Forward Voltage, VFM [V] di/dt [A/µs]

Fig 13. Forward Characteristics Fig 14. Reverse Recovery Characteristics

vs. di/dt

di/dt=-20A/µs
1.2 o 12
TC=25 C 1000
Reverse Recovery Current Irr [A]
Reverse Recovery Time, trr [ns]

100 T C = 150 C
o
1.0 10
Reverse Current, IR [µA]

trr
10
0.8 8
Irr
1

0.6 6 0.1
o
T C= 25 C
0.01
0.4 4

1E-3
10 20 30 40 50 60 0 300 600 900

Forward Current, IF [A] Reverse Voltage, V R [V]

Fig 15. Reverse Recovery Characteristics vs. Fig 16. Reverse Current vs. Reverse Voltage
Forward Current

250
o
TC = 25 C

200
Capacitance, Cj [pF]

150

100

50

0
0.1 1 10 100
Reverse Voltage, VR [V]

Fig 17. Junction capacitance

FGL60N100BNTD Rev.A2 www.fairchildsemi.com

 FGL60N100BNTD
Package Dimension

TO-264
20.00 ±0.20

6.00 ±0.20
(4.00)
(2.00)
(8.30) (8.30)
(1.00)
(9.00)
(9.00)

(0.50)
(11.00)

(R

ø3.3
2
.00

20.00 ±0.20
0 ±0
)

(R1
.20

.00
1.50 ±0.20

)
(2.00)

(7.00) (7.00)

4.90 ±0.20
2.50 ±0.10

(1.50)
(1.50) (1.50)
20.00 ±0.50

2.50 ±0.20 3.00 ±0.20

+0.25
1.00 –0.10

+0.25
5.45TYP 5.45TYP 0.60 –0.10 2.80 ±0.30
[5.45 ±0.30] [5.45 ±0.30]
5.00 ±0.20
3.50 ±0.20

(0.15)
(2.80)
(1.50)

Dimensions in Millimeters

FGL60N100BNTD Rev.A2 www.fairchildsemi.com

 tm

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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to
improve design.

Obsolete Not In Production This datasheet contains specifications on a product that has been dis-
continued by Fairchild Semiconductor.The datasheet is printed for refer-
ence information only.
Rev. I29

FGL60N100BNTD Rev.A2 www.fairchildsemi.com